ISC058N04NM5ATMA1 vs ISC011N06LM5ATMA1 Perbandingan

Perbandingan bersamaan detil ISC058N04NM5ATMA1 dari Infineon dan ISC011N06LM5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum ISC058N04NM5ATMA1 ISC011N06LM5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 40V Normal Level —
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 40 V 60 V
Continuous Drain Current (ID, Tc=25C) 63 A —
Continuous Drain Current (ID, Ta=25C) 17 A —
On-Resistance Rds(on) max @ VGS=10V, ID=31A 5.8 mOhm —
Gate Threshold Voltage VGS(th) typ 3.4 V —
Power Dissipation (TA=25C) 3 W —
Power Dissipation (TC=25C) 42 W —
Paket PG-TDSON-8 FL (SuperSO8 5x6 mm) PG-TDSON-8-17 (SuperSO8 5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Technology OptiMOS 5 trench MOSFET OptiMOS 5
Rentang Suhu Kerja -55C to +175C -55C to +175C
RoHS Compliance RoHS Compliant —
MSL (Moisture Sensitivity Level) MSL per JEDEC J-STD-020 —
Gate Drive Level Normal Level (10V VGS recommended) —
Part Number — ISC011N06LM5ATMA1
Polarity / Channel Type — N-Channel
Continuous Drain Current (ID) at Ta — 37 A
Continuous Drain Current (ID) at Tc — 288 A
Power Dissipation (PD) at Ta — 3 W
Power Dissipation (PD) at Tc — 188 W
RDS(on) max at VGS=10V — 1.15 mOhm
Jumlah Pin — 8
Status RoHS — Compliant
Level MSL — [DATA_NEEDED: MSL level]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) value]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg value]

Spek dan Sumber

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