ISC060N10NM6ATMA1 vs ISC011N03L5SATMA1 Perbandingan
Perbandingan bersamaan detil ISC060N10NM6ATMA1 dari Infineon dan ISC011N03L5SATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
ISC060N10NM6ATMA1 - 100V 97A OptiMOS 6 N-Channel MOSFET | Infineon
ISC060N10NM6ATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | ISC060N10NM6ATMA1 | ISC011N03L5SATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 6 100 V | OptiMOS 5 / StrongIRFET 30 V |
| Tipe Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V | 30 V |
| Continuous Drain Current (ID) at Ta | 15 A | — |
| Continuous Drain Current (ID) at Tc | 97 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Drain-Source On-Resistance (RDS(on)) | 6 mΩ at VGS = 10 V, ID = 25 A | — |
| Gate-Source Threshold Voltage (VGS(th)) | 3.3 V (typical) | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 125 W | — |
| Rentang Suhu Kerja | -55 °C to +175 °C (TJ) | — |
| Paket | PG-TDSON-8 FL (5.15 x 6.15 mm) | PG-TDSON-8-1 (TDSON EP, 8-pin, exposed pad) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | OptiMOS 6 (thin-wafer trench) | OptiMOS 5 trench MOSFET |
| Polarity | N-Channel | — |
| Status RoHS | Compliant | Compliant |
| Level MSL | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Continuous Drain Current (ID) @ Ta=25C | — | 37 A |
| Continuous Drain Current (ID) @ Tc=25C | — | 100 A |
| Power Dissipation (PD) @ Ta=25C | — | 2.5 W |
| Power Dissipation (PD) @ Tc=25C | — | 96 W |
| Suhu Kerja | — | -55 C to +175 C (TJ) |
| Gate Drive | — | Logic-level compatible |