ISC0805NLSATMA1 vs ISC0703NLSATMA1 Perbandingan

Perbandingan bersamaan detil ISC0805NLSATMA1 dari Infineon dan ISC0703NLSATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum ISC0805NLSATMA1 ISC0703NLSATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Family OptiMOS™ 5 —
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 100 V 60 V
Continuous Drain Current (ID) at TA=25°C 13 A —
Continuous Drain Current (ID) at TC=25°C 71 A —
Power Dissipation (PD) at TA 2.5 W —
Power Dissipation (PD) at TC 74 W —
On-Resistance RDS(on) max at VGS=10V 10.7 mΩ at 4.5V VGS; [DATA_NEEDED: RDS(on) max at 10V] —
On-Resistance RDS(on) max at VGS=4.5V 10.7 mΩ —
Gate Threshold Voltage VGS(th) typ 2.3 V —
Gate Charge Qg typ at VGS=4.5V 16 nC —
Input Capacitance Ciss 2.2 nF —
Reverse Transfer Capacitance Crss 23 pF —
Output Capacitance Coss 360 pF —
Paket PG-TDSON-8-46 (SuperSO8 5x6) PG-TDSON-8 (5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55 °C to +150 °C -55C to +150C (junction)
Status RoHS Compliant Compliant
Polarity / Channel Type — N-Channel
Continuous Drain Current (ID) at Ta=25C — 13 A
Continuous Drain Current (ID) at Tc=25C — 57 A
Power Dissipation (PD) at Ta=25C — 3 W
Power Dissipation (PD) at Tc=25C — 44 W
Technology — Trench MOSFET (OptiMOS family)
Standard Package Quantity — 5,000 (reel)
Level MSL — [DATA_NEEDED: MSL level]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical and min/max]
On-Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at VGS=10V]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical]
Avalanche Energy (EAS) — [DATA_NEEDED: EAS rating]

Spek dan Sumber

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