ISC088N08NM6ATMA1 vs BSC019N08NS5ATMA1 Perbandingan

Perbandingan bersamaan detil ISC088N08NM6ATMA1 dari Infineon dan BSC019N08NS5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum ISC088N08NM6ATMA1 BSC019N08NS5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 6 —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) 80 V —
Continuous Drain Current (ID) at Ta=25 C 12.1 A —
Continuous Drain Current (ID) at Tc=25 C 59 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current value]
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] ±20 V
Gate Threshold Voltage (VGS(th)) 3.5 V —
On-Resistance RDS(on) max at VGS=10 V 8.8 mOhm —
Total Gate Charge (Qg) [DATA_NEEDED: Qg] —
Power Dissipation (PD) at Ta=25 C 3 W —
Power Dissipation (PD) at Tc=25 C 71 W —
Suhu Hubung Kerja -55 C to +175 C —
Paket PG-TDSON-8 FL PG-TSON-8-3 (SuperSO8 5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Level MSL [DATA_NEEDED: MSL level] 1
Status RoHS Compliant (per distributor listings) Compliant
Technology Trench-gate OptiMOS 6 OptiMOS 5 (N-channel trench)
Polarity — N-Channel
Drain-Source Voltage (VDS) max — 80 V
Continuous Drain Current (ID) at TA=25C — 28 A
Continuous Drain Current (ID) at TC=25C — 237 A
On-Resistance RDS(on) max at VGS=10V — 1.9 mOhm
Gate Threshold Voltage VGS(th) typ — 3.0 V
Total Gate Charge Qg — [DATA_NEEDED: total gate charge Qg]
Power Dissipation (TA=25C) — 3 W
Power Dissipation (TC=25C) — 214 W
Rentang Suhu Kerja — -55 C to +150 C
Avalanche Rated — Yes

Spek dan Sumber

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