ISC088N08NM6ATMA1 vs BSC019N08NS5ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC088N08NM6ATMA1 disebabkan oleh Infineon dan BSC019N08NS5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr ISC088N08NM6ATMA1 BSC019N08NS5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 6 —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) 80 V —
Continuous Drain Current (ID) at Ta=25 C 12.1 A —
Continuous Drain Current (ID) at Tc=25 C 59 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current value]
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] ±20 V
Gate Threshold Voltage (VGS(th)) 3.5 V —
On-Resistance RDS(on) max at VGS=10 V 8.8 mOhm —
Total Gate Charge (Qg) [DATA_NEEDED: Qg] —
Power Dissipation (PD) at Ta=25 C 3 W —
Power Dissipation (PD) at Tc=25 C 71 W —
Suhu Hubungan Operasi -55 C to +175 C —
Kemasan PG-TDSON-8 FL PG-TSON-8-3 (SuperSO8 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL [DATA_NEEDED: MSL level] 1
Status RoHS Compliant (per distributor listings) Compliant
Technology Trench-gate OptiMOS 6 OptiMOS 5 (N-channel trench)
Polarity — N-Channel
Drain-Source Voltage (VDS) max — 80 V
Continuous Drain Current (ID) at TA=25C — 28 A
Continuous Drain Current (ID) at TC=25C — 237 A
On-Resistance RDS(on) max at VGS=10V — 1.9 mOhm
Gate Threshold Voltage VGS(th) typ — 3.0 V
Total Gate Charge Qg — [DATA_NEEDED: total gate charge Qg]
Power Dissipation (TA=25C) — 3 W
Power Dissipation (TC=25C) — 214 W
Gambaran Suhu Operasi — -55 C to +150 C
Avalanche Rated — Yes

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