ISC088N08NM6ATMA1 vs BSC050N04LSGATMA1 Perbandingan

Perbandingan bersamaan detil ISC088N08NM6ATMA1 dari Infineon dan BSC050N04LSGATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSC050N04LSGATMA1 BSC050N04LSGATMA1 - 40V 85A N-Ch OptiMOS 3 | Infineon

BSC050N04LSGATMA1 - 40V 85A N-Ch OptiMOS 3 | Infineon

BSC050N04LSGATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum ISC088N08NM6ATMA1 BSC050N04LSGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Family OptiMOS 6 —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) 80 V —
Continuous Drain Current (ID) at Ta=25 C 12.1 A —
Continuous Drain Current (ID) at Tc=25 C 59 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current IDM]
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) 3.5 V [DATA_NEEDED: VGS(th) typ/min/max]
On-Resistance RDS(on) max at VGS=10 V 8.8 mOhm —
Total Gate Charge (Qg) [DATA_NEEDED: Qg] —
Power Dissipation (PD) at Ta=25 C 3 W —
Power Dissipation (PD) at Tc=25 C 71 W —
Suhu Hubung Kerja -55 C to +175 C —
Paket PG-TDSON-8 FL PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Level MSL [DATA_NEEDED: MSL level] 1
Status RoHS Compliant (per distributor listings) Compliant
Technology Trench-gate OptiMOS 6 OptiMOS 3 (trench MOSFET)
FET Type — N-Channel
Drain-to-Source Voltage (VDS) — 40 V
Gate-to-Source Voltage (VGS) — ±20 V
Continuous Drain Current at 25C (ID, Ta) — 18 A
Continuous Drain Current at 25C (ID, Tc) — 85 A
Power Dissipation at Ta (PD) — 2.5 W
Power Dissipation at Tc (PD) — 57 W
On-State Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) max at VGS=10V]
On-State Resistance (RDS(on)) at VGS=4.5V — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Rentang Suhu Kerja — -55C to +150C
Avalanche Energy Rated — Yes (single-pulse avalanche)

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