ISC088N08NM6ATMA1 vs BSC050N04LSGATMA1 Comparison
Detailed side-by-side comparison of ISC088N08NM6ATMA1 by Infineon and BSC050N04LSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC088N08NM6ATMA1
ISC088N08NM6ATMA1 - 80V 8.8mOhm N-Channel MOSFET | Infineon
ISC088N08NM6ATMA1 β ActiveInfineon
BSC050N04LSGATMA1
BSC050N04LSGATMA1 - 40V 85A N-Ch OptiMOS 3 | Infineon
BSC050N04LSGATMA1 β ActiveSpecification Comparison
| Parameter | ISC088N08NM6ATMA1 | BSC050N04LSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.78 | $0.41 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS 6 | β |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 80 V | β |
| Continuous Drain Current (ID) at Ta=25 C | 12.1 A | β |
| Continuous Drain Current (ID) at Tc=25 C | 59 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current IDM] |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | β |
| Gate Threshold Voltage (VGS(th)) | 3.5 V | [DATA_NEEDED: VGS(th) typ/min/max] |
| On-Resistance RDS(on) max at VGS=10 V | 8.8 mOhm | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | β |
| Power Dissipation (PD) at Ta=25 C | 3 W | β |
| Power Dissipation (PD) at Tc=25 C | 71 W | β |
| Operating Junction Temperature | -55 C to +175 C | β |
| Package | PG-TDSON-8 FL | PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | [DATA_NEEDED: MSL level] | 1 |
| RoHS Status | Compliant (per distributor listings) | Compliant |
| Technology | Trench-gate OptiMOS 6 | OptiMOS 3 (trench MOSFET) |
| FET Type | β | N-Channel |
| Drain-to-Source Voltage (VDS) | β | 40 V |
| Gate-to-Source Voltage (VGS) | β | Β±20 V |
| Continuous Drain Current at 25C (ID, Ta) | β | 18 A |
| Continuous Drain Current at 25C (ID, Tc) | β | 85 A |
| Power Dissipation at Ta (PD) | β | 2.5 W |
| Power Dissipation at Tc (PD) | β | 57 W |
| On-State Resistance (RDS(on)) | β | [DATA_NEEDED: RDS(on) max at VGS=10V] |
| On-State Resistance (RDS(on)) at VGS=4.5V | β | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Operating Temperature Range | β | -55C to +150C |
| Avalanche Energy Rated | β | Yes (single-pulse avalanche) |