ISC110N12NM6ATMA1 vs BSC120N03LSGATMA1 Perbandingan

Perbandingan bersamaan detil ISC110N12NM6ATMA1 dari Infineon dan BSC120N03LSGATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum ISC110N12NM6ATMA1 BSC120N03LSGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity N-Channel —
Drain-Source Voltage (VDS) 120 V 30 V
Continuous Drain Current (ID) at Ta 11 A —
Continuous Drain Current (ID) at Tc 62 A —
On-Resistance RDS(on) max at VGS=10V 9.8 mΩ —
Gate-Source Voltage (VGS) max ±20 V +/-20 V
Gate Threshold Voltage (VGS(th)) typ 3.1 V —
Total Gate Charge (Qg) 15.4 nC —
Input Capacitance (Ciss) 1.1 nF —
Output Capacitance (Coss) 330 pF —
Reverse Transfer Capacitance (Crss) 10 pF —
Power Dissipation (Pd) at Tc 94 W —
Power Dissipation (Pd) at Ta 3 W —
Avalanche Energy (EAS) 185 mJ —
Suhu Hubung Kerja -55 °C to +175 °C —
Paket SuperSO8 (TDSON-8) PG-TDSON-8-5 (SuperSO-8, 5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant Compliant
Manufacturer — Infineon Technologies
Product Family — OptiMOS 3
FET Type — N-Channel
Continuous Drain Current (ID) at Ta=25C — 12 A
Continuous Drain Current (ID) at Tc=25C — 39 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical value]
On-State Resistance RDS(on) at VGS=10V — 12 mOhm (typical)
On-State Resistance RDS(on) at VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5V]
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 28 W
Rentang Suhu Kerja — -55C to +150C (TJ)
Level MSL — 1 (per JEDEC J-STD-020)

Spek dan Sumber

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