ISC151N08NM6ATMA1 vs IPTC017N12NM6ATMA1 Perbandingan
Perbandingan bersamaan detil ISC151N08NM6ATMA1 dari Infineon dan IPTC017N12NM6ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IPTC017N12NM6ATMA1 - 120V 1.7mΩ 331A OptiMOS 6 MOSFET | Infineon
IPTC017N12NM6ATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | ISC151N08NM6ATMA1 | IPTC017N12NM6ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 80 V | 120 V |
| Continuous Drain Current (TA=25°C) | 9.2 A | — |
| Arus Alir Berlanjut (TC=25°C) | 37 A | — |
| Power Dissipation (TA) | 3 W | — |
| Power Dissipation (TC) | 48 W | — |
| On-Resistance RDS(on) max | 15.1 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | 3.5 V | — |
| Technology | OptiMOS 6 | OptiMOS 6, N-channel trench MOSFET |
| Paket | PG-TDSON-8 FL | PG-HDSOP-16 (Surface Mount) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Jumlah Pin | 8 | — |
| Channel Mode | Enhancement | — |
| Suhu Kerja | -55 °C to +175 °C | -55 °C to +175 °C (TJ max) |
| Status RoHS | Compliant | Compliant |
| Continuous Drain Current (ID, Ta) | — | 32 A |
| Continuous Drain Current (ID, Tc) | — | 331 A |
| On-State Resistance RDS(on) max | — | 1.7 mΩ at VGS = 10 V |
| Gate-Source Threshold VGS(th) | — | 2.4 V (typ) |
| Total Gate Charge QG | — | 141 nC at VGS = 10 V |
| Input Capacitance Ciss | — | 2.4 nF at VDS = 60 V |
| Output Capacitance Coss | — | 11000 pF at VDS = 60 V |
| Power Dissipation (Ta) | — | 3.8 W |
| Power Dissipation (Tc) | — | 395 W |
| Gate Drive Voltage (recommended) | — | 10 V |