ISZ019N03L5SATMA1 vs BSC009NE2LS5IATMA1 Perbandingan
Perbandingan bersamaan detil ISZ019N03L5SATMA1 dari Infineon dan BSC009NE2LS5IATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
ISZ019N03L5SATMA1 - 30V 1.9mΩ OptiMOS 5 N-Channel MOSFET | Infineon
ISZ019N03L5SATMA1 ✓ AktifInfineon
BSC009NE2LS5IATMA1 - 25V 0.95mΩ 217A OptiMOS 5 N-MOSFET | Infineon
BSC009NE2LS5IATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | ISZ019N03L5SATMA1 | BSC009NE2LS5IATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 (<= 40V) | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at TA=25C | 22 A | — |
| Continuous Drain Current (ID) at TC=25C | 40 A | — |
| RDS(on) at VGS=10V | 1.9 mΩ (typical, ID=20A) | — |
| Gate Threshold Voltage (VGS(th)) | 2 V (typical) | — |
| Gate-Source Voltage Rating (VGS) | ±20 V | — |
| Total Gate Charge (Qg) | 44 nC at VGS=10V | — |
| Input Capacitance (Ciss) | 2800 pF at VDS=15V | — |
| Paket | PG-TSDSON-8-FL (5x6 mm) | PG-TDSON-8-7 (SuperSO8 5x6 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55C to +175C (TJ max) | -55°C to +150°C |
| Level MSL | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| RoHS / REACH | Compliant | — |
| Avalanche Rated | Yes | — |
| RG-tested | 100% | — |
| Manufacturer Part Number | — | BSC009NE2LS5IATMA1 |
| Technology | — | OptiMOS™ 5 (25V/30V family) |
| Tipe Transistor | — | N-Channel MOSFET |
| Configuration | — | Single with built-in diode |
| Drain-Source Voltage (V_DS) max | — | 25 V |
| Gate-Source Voltage (V_GS) max | — | 20 V |
| Gate-Threshold Voltage V_GS(th) typ | — | 1.7 V (range 1.0-2.0 V) |
| R_DS(on) max @ V_GS=10V | — | 0.95 mΩ |
| Continuous Drain Current (I_D) @ T_A=25°C | — | 40 A |
| Continuous Drain Current (I_D) @ T_C=25°C | — | 217 A (pulsed, datasheet rating) |
| Power Dissipation (P_D) @ T_A | — | 2.5 W |
| Power Dissipation (P_D) @ T_C | — | 74 W |
| Total Gate Charge (Q_G) typ | — | 23 nC @ V_GS=0-4.5V |
| Input Capacitance (C_iss) typ | — | 3200 pF |
| Terminal Finish | — | Matte Tin (e3 per JESD-609) |
| Number of Terminals | — | 8 |
| Status RoHS | — | Compliant |