ISZ019N03L5SATMA1 vs BSC009NE2LS5IATMA1 比較

詳細並排比較 ISZ019N03L5SATMA1 由 Infineon 與 BSC009NE2LS5IATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 ISZ019N03L5SATMA1 BSC009NE2LS5IATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 (<= 40V) —
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at TA=25C 22 A —
Continuous Drain Current (ID) at TC=25C 40 A —
RDS(on) at VGS=10V 1.9 mΩ (typical, ID=20A) —
Gate Threshold Voltage (VGS(th)) 2 V (typical) —
Gate-Source Voltage Rating (VGS) ±20 V —
Total Gate Charge (Qg) 44 nC at VGS=10V —
Input Capacitance (Ciss) 2800 pF at VDS=15V —
封裝 PG-TSDSON-8-FL (5x6 mm) PG-TDSON-8-7 (SuperSO8 5x6 mm)
安裝類型 Surface Mount Surface Mount
工作溫度範圍 -55C to +175C (TJ max) -55°C to +150°C
MSL 等級 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
RoHS / REACH Compliant —
Avalanche Rated Yes —
RG-tested 100% —
Manufacturer Part Number — BSC009NE2LS5IATMA1
Technology — OptiMOS™ 5 (25V/30V family)
電晶體類型 — N-Channel MOSFET
Configuration — Single with built-in diode
Drain-Source Voltage (V_DS) max — 25 V
Gate-Source Voltage (V_GS) max — 20 V
Gate-Threshold Voltage V_GS(th) typ — 1.7 V (range 1.0-2.0 V)
R_DS(on) max @ V_GS=10V — 0.95 mΩ
Continuous Drain Current (I_D) @ T_A=25°C — 40 A
Continuous Drain Current (I_D) @ T_C=25°C — 217 A (pulsed, datasheet rating)
Power Dissipation (P_D) @ T_A — 2.5 W
Power Dissipation (P_D) @ T_C — 74 W
Total Gate Charge (Q_G) typ — 23 nC @ V_GS=0-4.5V
Input Capacitance (C_iss) typ — 3200 pF
Terminal Finish — Matte Tin (e3 per JESD-609)
Number of Terminals — 8
RoHS 狀態 — Compliant

資料表與資源

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