K3KL2L20DM-JGCT vs K3LK4L40DM-BGCT Perbandingan
Perbandingan bersamaan detil K3KL2L20DM-JGCT dari Samsung Electronics dan K3LK4L40DM-BGCT dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electronics
K3LK4L40DM-BGCT - Samsung DRAM Memory IC | Samsung Electronics
K3LK4L40DM-BGCT ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | K3KL2L20DM-JGCT | K3LK4L40DM-BGCT |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | DRAM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | LPDDR5X SDRAM | DRAM (SDRAM component) |
| Density | 48 Gb | [DATA_NEEDED: Density] |
| Organisasi | x64 | — |
| Laju Data | 7500 Mbps | [DATA_NEEDED: Data Rate] |
| Supply Voltage (VDD1) | 1.8 V | — |
| Supply Voltage (VDD2) | 1.05 V | — |
| Supply Voltage (VDDQ) | 0.5 V | — |
| Core Voltage Rail | 0.9 V | — |
| Suhu Kerja | -25C to +85C | [DATA_NEEDED: Operating Temperature Range] |
| Paket | 441-ball FBGA | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Antarmuka | LPDDR5X (JEDEC low-power DRAM interface) | — |
| Product Status | Mass Production | — |
| Generation | LPDDR5X (1.25x speed, 25% better power efficiency vs LPDDR5) | — |
| Application Segment | AI devices, automotive, mobile | — |
| Status RoHS | unknown | [DATA_NEEDED: RoHS Status] |
| Manufacturer | — | Samsung Electronics |
| Organization (x-width) | — | [DATA_NEEDED: Organization] |
| Supply Voltage Class | — | [DATA_NEEDED: Supply Voltage] |
| Latensi CAS | — | [DATA_NEEDED: CAS Latency] |
| Package Type | — | BGA (per -BGC ordering-code suffix) |
| Package Ball Count | — | [DATA_NEEDED: Ball Count] |
| Refresh Rate | — | [DATA_NEEDED: Refresh Interval] |
| Lead Free | — | [DATA_NEEDED: Lead-Free Status] |
| Level MSL | — | [DATA_NEEDED: Moisture Sensitivity Level] |
| Packaging | — | Tape & Reel (per -T-style suffix convention) [DATA_NEEDED: confirmed packaging] |