K4A4G045WD-BCPB vs K4A4G085WD-BCRC Perbandingan
Perbandingan bersamaan detil K4A4G045WD-BCPB dari Samsung Electronics dan K4A4G085WD-BCRC dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | K4A4G045WD-BCPB | K4A4G085WD-BCRC |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM (D-die) |
| Density | 4 Gb | — |
| Organisasi | 1G x 4 | 512M x 8 |
| Speed Class | DDR4-2133 (PC2133) | — |
| Tegangan Pemuat | 1.2 V | 1.2 V |
| Antarmuka | DDR4 parallel, double data rate | Parallel |
| Die Generation | D-die | — |
| Paket | 78-ball TFBGA (FBGA) | FBGA-78 (TFBGA) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Number of Terminals | 78 | 78 |
| Terminal Form | Ball (BGA) | — |
| Package Shape | Rectangular | — |
| Burst Length | 8 (per Samsung DDR4 SDRAM datasheet Rev. 1.1) | — |
| Speed Bin Notation | CL-tRCD-tRP order (per Samsung ordering information) | — |
| Datasheet Pages | 66 pages (K4A4G045WD / K4A4G085WD family) | — |
| Suhu Kerja | [DATA_NEEDED: operating temperature range] | — |
| Refresh Rate | [DATA_NEEDED: refresh interval 1x/2x/4x support] | — |
| Memory Density | — | 4 Gbit |
| Laju Data | — | 2400 Mb/s (PC2400) |
| Access Mode | — | Multi-bank page burst |
| Latensi CAS | — | [DATA_NEEDED: CAS Latency] |
| Rentang Suhu Kerja | — | [DATA_NEEDED: Operating Temperature Range] |
| Refresh | — | [DATA_NEEDED: Refresh specification] |
| Status RoHS | — | [DATA_NEEDED: RoHS Status] |
| Level MSL | — | [DATA_NEEDED: MSL Level] |