K4A8G085WC-BCTD vs H5AN8G8NAFR-PBC Perbandingan

Perbandingan bersamaan detil K4A8G085WC-BCTD dari Samsung Electronics dan H5AN8G8NAFR-PBC dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Samsung Electronics
K4A8G085WC-BCTD K4A8G085WC-BCTD - 8Gb DDR4 SDRAM 2666Mbps 1.2V | Samsung

K4A8G085WC-BCTD - 8Gb DDR4 SDRAM 2666Mbps 1.2V | Samsung

K4A8G085WC-BCTD ⚠ Waktu Beli Terakhir
SK hynix
H5AN8G8NAFR-PBC H5AN8G8NAFR-PBC - 8Gb DDR4 SDRAM x8 1.2V | SK hynix

H5AN8G8NAFR-PBC - 8Gb DDR4 SDRAM x8 1.2V | SK hynix

H5AN8G8NAFR-PBC ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum K4A8G085WC-BCTD H5AN8G8NAFR-PBC
Merek Samsung Electronics SK hynix
Kategori Memory ICs DRAM
Status Lingkungan Hidup Waktu Pembelian Terakhir Aktif
Tipe Memori DDR4 SDRAM DDR4 SDRAM
Density 8 Gb 8 Gb
Organisasi 1G x 8 1G x 8
Laju Data 2666 Mbps (PC4-2133) —
Supply Voltage (VDD/VDDQ) 1.2 V (1.14 V to 1.26 V) —
Paket 78-ball FBGA (78FBGA) FBGA-78
Ball Pitch 0.8 mm —
Suhu Kerja 0C to +95C [DATA_NEEDED: operating temperature range]
Standard Operating Temp Range 0C to +85C —
Burst Length 8 (chop 4) —
Auto Precharge Yes —
Asynchronous Reset Yes —
CRC Function Yes —
ZQ Calibration Yes —
Dynamic ODT Yes —
Data Mask Yes —
Tipe Antarmuka Synchronous, parallel —
Tipe Mounting Surface Mount Surface Mount
Status RoHS [DATA_NEEDED: RoHS status] Compliant
Tegangan Pemuat — 1.2 V
Speed Grade / Data Rate — [DATA_NEEDED: speed grade / data rate]
Antarmuka — DDR4 (double data rate, synchronized to clock)
Address Inputs — A0 - A17 (A10/AP, A12/BC_n, RAS_n/A16, CAS_n/A15, WE_n/A14 multiplexed)
Connectivity Test Mode — TEN (optional input on x4/x8, required on x16)
Process Technology — CMOS
Lead-Free — Yes
Bebas Halogen — Yes
Datasheet Revision — Rev. 1.2 / July 2017

Spek dan Sumber

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