K4A8G085WC-BCTD vs K4A8G085WB Perbandingan

Perbandingan bersamaan detil K4A8G085WC-BCTD dari Samsung Electronics dan K4A8G085WB dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Samsung Electronics
K4A8G085WC-BCTD K4A8G085WC-BCTD - 8Gb DDR4 SDRAM 2666Mbps 1.2V | Samsung

K4A8G085WC-BCTD - 8Gb DDR4 SDRAM 2666Mbps 1.2V | Samsung

K4A8G085WC-BCTD ⚠ Waktu Beli Terakhir
Samsung Electronics
K4A8G085WB K4A8G085WB - 8Gb B-die DDR4 SDRAM 1Gx8 | Samsung

K4A8G085WB - 8Gb B-die DDR4 SDRAM 1Gx8 | Samsung

K4A8G085WB ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum K4A8G085WC-BCTD K4A8G085WB
Merek Samsung Electronics Samsung Electronics
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Waktu Pembelian Terakhir Aktif
Tipe Memori DDR4 SDRAM DDR4 SDRAM (B-die)
Density 8 Gb 8 Gbit
Organisasi 1G x 8 1G x 8
Laju Data 2666 Mbps (PC4-2133) [DATA_NEEDED: speed grade data rate in Mbps]
Supply Voltage (VDD/VDDQ) 1.2 V (1.14 V to 1.26 V) —
Paket 78-ball FBGA (78FBGA) 78-pin FBGA
Ball Pitch 0.8 mm —
Suhu Kerja 0C to +95C [DATA_NEEDED: operating temperature range]
Standard Operating Temp Range 0C to +85C —
Burst Length 8 (chop 4) —
Auto Precharge Yes —
Asynchronous Reset Yes —
CRC Function Yes —
ZQ Calibration Yes —
Dynamic ODT Yes —
Data Mask Yes —
Tipe Antarmuka Synchronous, parallel —
Tipe Mounting Surface Mount Surface Mount
Status RoHS [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Tegangan Pemuat — 1.2 V
Operating Mode — DLL Enabled mode (per datasheet)
Speed Grade Suffixes — -BCRC, -BIRC, -BCTD, -BCPB (per family naming)
tCL/cas latency — [DATA_NEEDED: CAS latency]
Refresh — [DATA_NEEDED: refresh rate 1x/2x]
Bank Groups — [DATA_NEEDED: bank/bank group count]
Package Dimensions — [DATA_NEEDED: package dimensions]
Level MSL — [DATA_NEEDED: moisture sensitivity level]
Termination Voltage (VTT) — [DATA_NEEDED: VTT value]

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