K4A8G085WC-BCTD vs K4A8G085WB 比較
詳細並排比較 K4A8G085WC-BCTD 由 Samsung Electronics 與 K4A8G085WB 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Samsung Electronics
K4A8G085WC-BCTD - 8Gb DDR4 SDRAM 2666Mbps 1.2V | Samsung
K4A8G085WC-BCTD ⚠ 最後購買機會規格比較
| 參數 | K4A8G085WC-BCTD | K4A8G085WB |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 最後購買 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM (B-die) |
| Density | 8 Gb | 8 Gbit |
| 組織 | 1G x 8 | 1G x 8 |
| 資料速率 | 2666 Mbps (PC4-2133) | [DATA_NEEDED: speed grade data rate in Mbps] |
| Supply Voltage (VDD/VDDQ) | 1.2 V (1.14 V to 1.26 V) | — |
| 封裝 | 78-ball FBGA (78FBGA) | 78-pin FBGA |
| Ball Pitch | 0.8 mm | — |
| 工作溫度 | 0C to +95C | [DATA_NEEDED: operating temperature range] |
| Standard Operating Temp Range | 0C to +85C | — |
| Burst Length | 8 (chop 4) | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| CRC Function | Yes | — |
| ZQ Calibration | Yes | — |
| Dynamic ODT | Yes | — |
| Data Mask | Yes | — |
| 介面類型 | Synchronous, parallel | — |
| 安裝類型 | Surface Mount | Surface Mount |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| 供應電壓 | — | 1.2 V |
| Operating Mode | — | DLL Enabled mode (per datasheet) |
| Speed Grade Suffixes | — | -BCRC, -BIRC, -BCTD, -BCPB (per family naming) |
| tCL/cas latency | — | [DATA_NEEDED: CAS latency] |
| Refresh | — | [DATA_NEEDED: refresh rate 1x/2x] |
| Bank Groups | — | [DATA_NEEDED: bank/bank group count] |
| Package Dimensions | — | [DATA_NEEDED: package dimensions] |
| MSL 等級 | — | [DATA_NEEDED: moisture sensitivity level] |
| Termination Voltage (VTT) | — | [DATA_NEEDED: VTT value] |