K4AAG085WA-BCWE vs K4AAG085WM-BCWE Perbandingan
Perbandingan bersamaan detil K4AAG085WA-BCWE dari Samsung Electronics dan K4AAG085WM-BCWE dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | K4AAG085WA-BCWE | K4AAG085WM-BCWE |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | DRAM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gbit | 16 Gb |
| Organisasi | 2G x 8 | 2G x 8 |
| Laju Data | 3200 Mbps (DDR4-3200) | 3200 Mbps (DDR4-3200) |
| Tegangan Pemuat | 1.2 V | 1.2 V |
| Operating Voltage Range | 1.14 V to 1.26 V | — |
| Suhu Kerja | 0 C to 85 C | 0C to +85C |
| Paket | 78-ball FBGA (9 x 11 mm, 0.8 mm pitch) | 78FBGA |
| Tipe Mounting | Surface Mount | Surface Mount |
| Antarmuka | JEDEC DDR4 | DDR4 (JEDEC-standard) |
| Memory Width | 8-bit | — |
| Refresh | Auto-refresh (per JEDEC DDR4) | — |
| Application Class | Main memory / embedded DRAM | Memory IC / Storage Component |
| Status RoHS | Compliant (per JLCPCB listing) | [DATA_NEEDED: RoHS status] |
| Manufacturer | Samsung Electronics | — |
| Bank Group Architecture | — | Yes (DDR4) |
| Speed Grade Suffix | — | -BCWE |
| Power Reduction vs DDR3 | — | Approx. 25% lower (per Samsung DDR4 literature) |
| Level MSL | — | [DATA_NEEDED: MSL level] |