K4RAH165VB-BIWM vs K4RAH165VB-BCWM Perbandingan
Perbandingan bersamaan detil K4RAH165VB-BIWM dari Samsung Electronics dan K4RAH165VB-BCWM dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electronics
K4RAH165VB-BIWM - 16Gb DDR5 1Gx16 5600Mbps DRAM | Samsung
K4RAH165VB-BIWM ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | K4RAH165VB-BIWM | K4RAH165VB-BCWM |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR5 SDRAM | DDR5 SDRAM (volatile DRAM) |
| Density | 16 Gb | — |
| Organisasi | 1G x 16 | — |
| Laju Data | 5600 Mbps | — |
| Tegangan Pemuat | 1.1 V | 1.1 V |
| Paket | 106-ball FBGA | FBGA-106 |
| Suhu Kerja | 0C to +85C | 0C to +85C |
| On-Die ECC | Yes (per K4RAH165VB family datasheet) | — |
| Self Refresh | Auto self-refresh | — |
| Reset Function | Asynchronous reset | — |
| Write Leveling | Yes | Yes |
| CRC Function | Yes | Yes |
| ZQ Calibration | Yes | Yes |
| DLL | DLL enabled mode of operation (per datasheet) | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Standard Packaging | 1000 units | — |
| Status RoHS | Compliant (per JLCPCB listing for K4RAH165VB-BCWM, same family) | Compliant |
| Ukuran Memori | — | 16 Gb |
| Memory Organization | — | 1G x 16 |
| Memory Interface | — | Parallel |
| Technology | — | DDR5 |
| Maximum Data Rate (DDR5 family) | — | up to 7200 Mbps |
| On-die ECC | — | Yes |
| Auto Self-Refresh | — | Yes |
| Asynchronous Reset | — | Yes |
| Speed Grade (suffix BCWM) | — | [DATA_NEEDED: speed grade / CAS latency] |
| Packaging | — | Tray |