K9MDG08U5M vs K9HCG08U1M Perbandingan
Perbandingan bersamaan detil K9MDG08U5M dari Samsung Electronics dan K9HCG08U1M dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electronics
K9HCG08U1M - 64Gb 8Gx8 MLC NAND Flash | Samsung | SSD Storage
K9HCG08U1M ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | K9MDG08U5M | K9HCG08U1M |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | MLC Large Block NAND Flash | — |
| Density | 16 Gbit (2 GB) | — |
| Organisasi | 16G x 8 bit | 8G x 8 |
| Cell Type | MLC (2 bits per cell) | — |
| Supply Voltage Min | 2.7 V | — |
| Supply Voltage Max | 3.6 V | — |
| Antarmuka | Asynchronous x8 multiplexed address/data | — |
| Paket | 48-pin TSOP1 dual stacked, 12 mm x 20 mm | TSOP-48 (PDSO48) |
| Terminals | 48 | — |
| Circuits | 1 | — |
| Die Configuration | Dual stacked | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | [DATA_NEEDED: operating temperature range] | -40C to +105C (TA) |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Page Read Time (tR) | [DATA_NEEDED: tR] | — |
| Program Time (tPROG) | [DATA_NEEDED: tPROG] | [DATA_NEEDED: program time] |
| Status RoHS | unknown | — |
| Memory Technology | — | MLC NAND Flash |
| Total Capacity | — | 64 Gbit |
| Lebar Bus Data | — | 8 bit |
| Tipe Antarmuka | — | Asynchronous NAND (multiplexed address/data/command) |
| Tegangan Pemuat | — | [DATA_NEEDED: supply voltage] |
| Read Time (tR) | — | [DATA_NEEDED: read time] |
| Program/Erase Cycles | — | [DATA_NEEDED: endurance] |
| Ready/Busy Output | — | Yes (R/B#) |
| Die Technology | — | Samsung E-die (per datasheet family) |
| Full Ordering Code | — | K9HCG08U1M-PCB0 / K9HCG08U1M-PCB0T00 |