K9PKGY8S7M-CCK0 vs K9DUGY8S7M Perbandingan
Perbandingan bersamaan detil K9PKGY8S7M-CCK0 dari Samsung Electronics dan K9DUGY8S7M dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electronics
K9DUGY8S7M - Samsung V-NAND Flash Memory | Samsung Electronics
K9DUGY8S7M ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | K9PKGY8S7M-CCK0 | K9DUGY8S7M |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Memory Capacity | 128 Gb (16 GB) | — |
| Tipe Memori | NAND Flash | NAND Flash (V-NAND, 3D) |
| Cell Architecture | 3D V-NAND, MLC (2 bits/cell) | — |
| V-NAND Layers | 24 layers | — |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Paket | BGA | [DATA_NEEDED: package code] |
| Tipe Mounting | Surface Mount | Surface Mount |
| Antarmuka | Asynchronous/toggle-mode NAND bus (per Samsung V-NAND family) | — |
| Tegangan Pemuat | [DATA_NEEDED: supply voltage] | [DATA_NEEDED: supply voltage] |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Program/Erase Cycles | [DATA_NEEDED: P/E cycle endurance] | [DATA_NEEDED: p/e cycles] |
| Suhu Kerja | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature] |
| Status RoHS | Lead free / RoHS compliant | Compliant |
| Application Domain | Enterprise SSD (e.g., Samsung 845DC Pro) | — |
| Access Time (tR) | [DATA_NEEDED: read cycle time] | — |
| Data Retention | [DATA_NEEDED: retention specification] | — |
| Family | — | K9DUG-series NAND |
| Density | — | [DATA_NEEDED: density] |
| Organisasi | — | [DATA_NEEDED: organization] |
| Tipe Antarmuka | — | [DATA_NEEDED: interface type] |
| Access Time / tR | — | [DATA_NEEDED: access time] |
| Level MSL | — | [DATA_NEEDED: MSL level] |