K9PKGY8S7M-CCK0 vs K9DUGY8S7M 比較

詳細並排比較 K9PKGY8S7M-CCK0 由 Samsung Electronics 與 K9DUGY8S7M 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Samsung Electronics
K9PKGY8S7M-CCK0 K9PKGY8S7M-CCK0 - 128Gb 3D V-NAND MLC Flash | Samsung

K9PKGY8S7M-CCK0 - 128Gb 3D V-NAND MLC Flash | Samsung

K9PKGY8S7M-CCK0 ✓ 啟用中
Samsung Electronics
K9DUGY8S7M K9DUGY8S7M - Samsung V-NAND Flash Memory | Samsung Electronics

K9DUGY8S7M - Samsung V-NAND Flash Memory | Samsung Electronics

K9DUGY8S7M ✓ 啟用中

規格比較

參數 K9PKGY8S7M-CCK0 K9DUGY8S7M
品牌 Samsung Electronics Samsung Electronics
類別 Memory ICs Memory ICs
生命週期狀態 啟用中 啟用中
Memory Capacity 128 Gb (16 GB) —
記憶體類型 NAND Flash NAND Flash (V-NAND, 3D)
Cell Architecture 3D V-NAND, MLC (2 bits/cell) —
V-NAND Layers 24 layers —
Manufacturer Samsung Electronics Samsung Electronics
封裝 BGA [DATA_NEEDED: package code]
安裝類型 Surface Mount Surface Mount
介面 Asynchronous/toggle-mode NAND bus (per Samsung V-NAND family) —
供應電壓 [DATA_NEEDED: supply voltage] [DATA_NEEDED: supply voltage]
Page Size [DATA_NEEDED: page size] [DATA_NEEDED: page size]
Block Size [DATA_NEEDED: block size] [DATA_NEEDED: block size]
Program/Erase Cycles [DATA_NEEDED: P/E cycle endurance] [DATA_NEEDED: p/e cycles]
工作溫度 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature]
RoHS 狀態 Lead free / RoHS compliant Compliant
Application Domain Enterprise SSD (e.g., Samsung 845DC Pro) —
Access Time (tR) [DATA_NEEDED: read cycle time] —
Data Retention [DATA_NEEDED: retention specification] —
Family — K9DUG-series NAND
Density — [DATA_NEEDED: density]
組織 — [DATA_NEEDED: organization]
介面類型 — [DATA_NEEDED: interface type]
Access Time / tR — [DATA_NEEDED: access time]
MSL 等級 — [DATA_NEEDED: MSL level]

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