K9PKGY8S7M-CCK0 vs K9DUGY8S7M مقایسه
مقایسه دقیق کنار به کنار K9PKGY8S7M-CCK0 توسط Samsung Electronics و K9DUGY8S7M توسط Samsung Electronics. مشخصات کلیدی، پارامترهای الکتریکی، بسته‌بندی، وضعیت چرخه عمر، قیمت‌گذاری و موجودی را مقایسه کنید تا بهترین قطعه را برای نیازهای طراحی خود تعیین کنید.
Samsung Electronics
K9DUGY8S7M - Samsung V-NAND Flash Memory | Samsung Electronics
K9DUGY8S7M ✓ فعالمقایسه مشخصات
| پارامتر | K9PKGY8S7M-CCK0 | K9DUGY8S7M |
|---|---|---|
| برند | Samsung Electronics | Samsung Electronics |
| دسته‌بندی | Memory ICs | Memory ICs |
| وضعیت چرخه عمر | فعال | فعال |
| Memory Capacity | 128 Gb (16 GB) | — |
| نوع حافظه | NAND Flash | NAND Flash (V-NAND, 3D) |
| Cell Architecture | 3D V-NAND, MLC (2 bits/cell) | — |
| V-NAND Layers | 24 layers | — |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| بسته‌بندی | BGA | [DATA_NEEDED: package code] |
| نوع نصب | Surface Mount | Surface Mount |
| رابط | Asynchronous/toggle-mode NAND bus (per Samsung V-NAND family) | — |
| ولتاژ تغذیه | [DATA_NEEDED: supply voltage] | [DATA_NEEDED: supply voltage] |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Program/Erase Cycles | [DATA_NEEDED: P/E cycle endurance] | [DATA_NEEDED: p/e cycles] |
| دمای کاری | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature] |
| وضعیت RoHS | Lead free / RoHS compliant | Compliant |
| Application Domain | Enterprise SSD (e.g., Samsung 845DC Pro) | — |
| Access Time (tR) | [DATA_NEEDED: read cycle time] | — |
| Data Retention | [DATA_NEEDED: retention specification] | — |
| Family | — | K9DUG-series NAND |
| Density | — | [DATA_NEEDED: density] |
| سازمان | — | [DATA_NEEDED: organization] |
| نوع رابط | — | [DATA_NEEDED: interface type] |
| Access Time / tR | — | [DATA_NEEDED: access time] |
| سطح MSL | — | [DATA_NEEDED: MSL level] |