K9PKGY8S7M-CCK0 vs K9DVGY8J5M Perbandingan

Perbandingan bersamaan detil K9PKGY8S7M-CCK0 dari Samsung Electronics dan K9DVGY8J5M dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Samsung Electronics
K9PKGY8S7M-CCK0 K9PKGY8S7M-CCK0 - 128Gb 3D V-NAND MLC Flash | Samsung

K9PKGY8S7M-CCK0 - 128Gb 3D V-NAND MLC Flash | Samsung

K9PKGY8S7M-CCK0 ✓ Aktif
Samsung Electronics
K9DVGY8J5M K9DVGY8J5M - Samsung V-NAND TLC Flash Memory Chip | Samsung

K9DVGY8J5M - Samsung V-NAND TLC Flash Memory Chip | Samsung

K9DVGY8J5M ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum K9PKGY8S7M-CCK0 K9DVGY8J5M
Merek Samsung Electronics Samsung Electronics
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Memory Capacity 128 Gb (16 GB) —
Tipe Memori NAND Flash —
Cell Architecture 3D V-NAND, MLC (2 bits/cell) —
V-NAND Layers 24 layers —
Manufacturer Samsung Electronics Samsung Electronics
Paket BGA —
Tipe Mounting Surface Mount Surface Mount
Antarmuka Asynchronous/toggle-mode NAND bus (per Samsung V-NAND family) —
Tegangan Pemuat [DATA_NEEDED: supply voltage] —
Page Size [DATA_NEEDED: page size] —
Block Size [DATA_NEEDED: block size] —
Program/Erase Cycles [DATA_NEEDED: P/E cycle endurance] —
Suhu Kerja [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Status RoHS Lead free / RoHS compliant [DATA_NEEDED: RoHS status]
Application Domain Enterprise SSD (e.g., Samsung 845DC Pro) —
Access Time (tR) [DATA_NEEDED: read cycle time] —
Data Retention [DATA_NEEDED: retention specification] —
Product Type — Raw NAND Flash Memory
NAND Technology — Samsung V-NAND (3D TLC)
Flash ID — EC519A3F8CCB
Density — [DATA_NEEDED: die density (Gb)]
Organization (Page/Block) — [DATA_NEEDED: page and block organization]
Tipe Antarmuka — [DATA_NEEDED: interface (toggle DDR / async)]
Supply Voltage (VCC) — [DATA_NEEDED: VCC voltage]
Supply Voltage (VCCQ) — [DATA_NEEDED: VCCQ voltage]
Program Page Time (tPROG) — [DATA_NEEDED: tPROG typical/us]
Block Erase Time (tBERS) — [DATA_NEEDED: tBERS typical/us]
Read Time (tR) — [DATA_NEEDED: tR typical/us]
Program/Erase Endurance — [DATA_NEEDED: P/E cycle endurance]
Package Type — [DATA_NEEDED: package type and dimensions]

Spek dan Sumber

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