M29DW323DB70N3E vs M29W320DB70N3E Perbandingan
Perbandingan bersamaan detil M29DW323DB70N3E dari Micron Technology dan M29W320DB70N3E dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | M29DW323DB70N3E | M29W320DB70N3E |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | Flash |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | Flash - NOR | NOR Flash |
| Memory Format | FLASH | — |
| Technology | FLASH - NOR Memory IC | — |
| Density | 32 Mb (4M x 8, 2M x 16) | 32 Mbit (33554 kbits) |
| Memory Organization | 4M x 8 / 2M x 16 | — |
| Antarmuka | Parallel | Parallel |
| Access Time | 70 ns | 70 ns |
| Tegangan Pemuat | 3 V class (per manufacturer datasheet) | — |
| Suhu Kerja | -40C to +125C | -40C to +125C |
| Paket | 48-TSOP I | 48-TSOP I |
| Tipe Mounting | Surface Mount | Surface Mount |
| Boot Block Location | Bottom (DB variant) | — |
| Byte/Word Organization Select | Yes (BYTE pin) | — |
| Applications Domain | Embedded code storage / XIP | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | ROHS3 Compliant |
| Standard Pack Quantity | [DATA_NEEDED: standard pack quantity] | — |
| Organisasi | — | 2M x 16 |
| Number of Words | — | 2000 k |
| Bits per Word | — | 16 bits |
| Supply Voltage (VCC) | — | 2.7 V to 3.6 V |
| VPP Fast Program Voltage | — | 12 V (optional) |
| Block Architecture | — | Non-uniform parameter blocks, boot block (bottom boot, DB type) |
| Programming Mode | — | Single VCC program/erase; automatic program/erase with status polling |
| Power-Up Mode | — | Read mode (default) |