M29DW323DB70N3E vs M29W320DB70N3E Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci M29DW323DB70N3E disebabkan oleh Micron Technology dan M29W320DB70N3E disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | M29DW323DB70N3E | M29W320DB70N3E |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | Flash |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | Flash - NOR | NOR Flash |
| Memory Format | FLASH | — |
| Technology | FLASH - NOR Memory IC | — |
| Density | 32 Mb (4M x 8, 2M x 16) | 32 Mbit (33554 kbits) |
| Memory Organization | 4M x 8 / 2M x 16 | — |
| Antaramuka | Parallel | Parallel |
| Access Time | 70 ns | 70 ns |
| Tegangan Pemberi Arus | 3 V class (per manufacturer datasheet) | — |
| Suhu Operasi | -40C to +125C | -40C to +125C |
| Kemasan | 48-TSOP I | 48-TSOP I |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Boot Block Location | Bottom (DB variant) | — |
| Byte/Word Organization Select | Yes (BYTE pin) | — |
| Applications Domain | Embedded code storage / XIP | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | ROHS3 Compliant |
| Standard Pack Quantity | [DATA_NEEDED: standard pack quantity] | — |
| Organisasi | — | 2M x 16 |
| Number of Words | — | 2000 k |
| Bits per Word | — | 16 bits |
| Supply Voltage (VCC) | — | 2.7 V to 3.6 V |
| VPP Fast Program Voltage | — | 12 V (optional) |
| Block Architecture | — | Non-uniform parameter blocks, boot block (bottom boot, DB type) |
| Programming Mode | — | Single VCC program/erase; automatic program/erase with status polling |
| Power-Up Mode | — | Read mode (default) |