M29F800FB55N3F2 vs M29F160FT55N3F2 Perbandingan

Perbandingan bersamaan detil M29F800FB55N3F2 dari Micron Technology dan M29F160FT55N3F2 dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Micron Technology
M29F800FB55N3F2 M29F800FB55N3F2 - 8Mbit 5V Parallel NOR Flash 55ns | Micron

M29F800FB55N3F2 - 8Mbit 5V Parallel NOR Flash 55ns | Micron

M29F800FB55N3F2 ✓ Aktif
Micron Technology
M29F160FT55N3F2 M29F160FT55N3F2 - 16Mbit 5V 55ns NOR Flash | Micron Technology

M29F160FT55N3F2 - 16Mbit 5V 55ns NOR Flash | Micron Technology

M29F160FT55N3F2 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum M29F800FB55N3F2 M29F160FT55N3F2
Merek Micron Technology Micron Technology
Kategori Memory ICs Flash
Status Lingkungan Hidup Aktif Aktif
Memory Density 8389 kbits (8 Mbit) —
Organisasi 1M x 8 / 512K x 16 1M x 16 / 2M x 8
Tegangan Pemuat 5 V —
Access Time 55 ns 55 ns
Tipe Antarmuka Parallel NOR —
Boot Block Architecture Bottom Boot Block —
Program/Erase Controller Embedded byte/word program algorithms —
Suhu Kerja -40C to +125C -40C to +125C
Temperature Grade Automotive (AEC-Q100) —
Package Type 48-pin TSOP1 —
Package Shape Rectangular (JESD designation TSOP1) —
Terminal Count 48 —
JESD-609 Termination Code e3 (lead-free) —
Tipe Mounting Surface Mount Surface Mount
Packaging Tape & Reel (T/R) Tape & Reel
Status RoHS Compliant (lead-free terminations) [DATA_NEEDED: RoHS status]
Tipe Memori — NOR Flash (Parallel, Asynchronous)
Density — 16 Mbit (16777 kbits)
Number of Words — 1000 k
Bits per Word — 16 bits
Supply Voltage (VCC) — 5 V (operating 4.5 V)
Antarmuka — Parallel
Synchronous / Asynchronous — Asynchronous
Boot Block Location — Top boot block (FT)
Paket — 48-Pin TSOP
Program / Erase — Embedded byte/word program algorithms (controller on-chip)
Level MSL — [DATA_NEEDED: moisture sensitivity level]

Spek dan Sumber

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