M29F800FB55N3F2 vs M29F160FT55N3F2 比較

詳細並排比較 M29F800FB55N3F2 由 Micron Technology 與 M29F160FT55N3F2 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Micron Technology
M29F800FB55N3F2 M29F800FB55N3F2 - 8Mbit 5V Parallel NOR Flash 55ns | Micron

M29F800FB55N3F2 - 8Mbit 5V Parallel NOR Flash 55ns | Micron

M29F800FB55N3F2 ✓ 啟用中
Micron Technology
M29F160FT55N3F2 M29F160FT55N3F2 - 16Mbit 5V 55ns NOR Flash | Micron Technology

M29F160FT55N3F2 - 16Mbit 5V 55ns NOR Flash | Micron Technology

M29F160FT55N3F2 ✓ 啟用中

規格比較

參數 M29F800FB55N3F2 M29F160FT55N3F2
品牌 Micron Technology Micron Technology
類別 Memory ICs Flash
生命週期狀態 啟用中 啟用中
Memory Density 8389 kbits (8 Mbit) —
組織 1M x 8 / 512K x 16 1M x 16 / 2M x 8
供應電壓 5 V —
Access Time 55 ns 55 ns
介面類型 Parallel NOR —
Boot Block Architecture Bottom Boot Block —
Program/Erase Controller Embedded byte/word program algorithms —
工作溫度 -40C to +125C -40C to +125C
Temperature Grade Automotive (AEC-Q100) —
Package Type 48-pin TSOP1 —
Package Shape Rectangular (JESD designation TSOP1) —
Terminal Count 48 —
JESD-609 Termination Code e3 (lead-free) —
安裝類型 Surface Mount Surface Mount
Packaging Tape & Reel (T/R) Tape & Reel
RoHS 狀態 Compliant (lead-free terminations) [DATA_NEEDED: RoHS status]
記憶體類型 — NOR Flash (Parallel, Asynchronous)
Density — 16 Mbit (16777 kbits)
Number of Words — 1000 k
Bits per Word — 16 bits
Supply Voltage (VCC) — 5 V (operating 4.5 V)
介面 — Parallel
Synchronous / Asynchronous — Asynchronous
Boot Block Location — Top boot block (FT)
封裝 — 48-Pin TSOP
Program / Erase — Embedded byte/word program algorithms (controller on-chip)
MSL 等級 — [DATA_NEEDED: moisture sensitivity level]

資料表與資源

瀏覽所有產品 建立 BOM 索取報價