M29F800FT55M3F2 vs M29F400FT55N3F2 Perbandingan
Perbandingan bersamaan detil M29F800FT55M3F2 dari Micron Technology dan M29F400FT55N3F2 dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Micron Technology
M29F800FT55M3F2 - 8Mbit 5V Parallel NOR Flash 55ns | Micron
M29F800FT55M3F2 ✓ AktifMicron Technology
M29F400FT55N3F2 - 4Mbit 5V Parallel NOR Flash 55ns | Micron
M29F400FT55N3F2 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | M29F800FT55M3F2 | M29F400FT55N3F2 |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | EEPROM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | Parallel NOR Flash | NOR Flash (SLC) |
| Density | 8 Mbit (8389 kbits) | — |
| Organisasi | 512K x 16 / 1M x 8 | 256K x 16 |
| Access Time | 55 ns | 55 ns |
| Supply Voltage (VCC) | 5 V | — |
| Boot Block Position | Top boot block | — |
| Programming Interface | Embedded program/erase controller | — |
| Suhu Kerja | -40C to +125C | [DATA_NEEDED: min operating temperature] |
| Paket | 44-pin SO (SOP) | 44-SO (SOP-44) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Packaging | Tape & Reel (TR) | — |
| Antarmuka | Parallel, x8/x16 selectable | Parallel |
| Standby Current | [DATA_NEEDED: standby current] | — |
| Program/Erase Endurance | [DATA_NEEDED: endurance cycles] | [DATA_NEEDED: endurance cycles] |
| Status RoHS | Compliant (lead-free suffix F2) | — |
| Ukuran Memori | — | 4 Mbit |
| Tegangan Pemuat | — | 5 V |
| Block Architecture | — | Top boot block |
| Temperature Grade | — | Auto Grade 3, up to +125C (per Micron ordering code) |
| Compliance Suffix | — | F2 (RoHS-compliant, lead-free plating) |
| Programming Voltage | — | Single supply (no 12 V VPP required) |
| Technology | — | Floating-gate NOR cell, charge-pump program/erase |
| Max Standby Current | — | [DATA_NEEDED: standby current] |