M29W128GL70ZS3E vs M29W128GH70ZA3E Perbandingan
Perbandingan bersamaan detil M29W128GL70ZS3E dari Micron Technology dan M29W128GH70ZA3E dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Micron Technology
M29W128GL70ZS3E - 128Mb 3V Parallel NOR Flash 70ns | Micron
M29W128GL70ZS3E ✓ AktifMicron Technology
M29W128GH70ZA3E - 128Mbit Parallel NOR Flash, 70ns | Micron
M29W128GH70ZA3E ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | M29W128GL70ZS3E | M29W128GH70ZA3E |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | NOR Flash | NOR Flash |
| Antarmuka | Parallel | Parallel |
| Ukuran Memori | 128 Mbit (16 MB) | 128 Mbit |
| Access Time | 70 ns | 70 ns |
| Tegangan Pemuat | 2.7 V to 3.6 V (3 V class) | [DATA_NEEDED: supply voltage range] |
| Paket | 64-FBGA (11x13 mm) | 64-TBGA (10x13 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | -40C to +125C (per distributor code data) | [DATA_NEEDED: operating temperature range] |
| Family | M29W128G (GL variant) | — |
| Bus Width | x16 | — |
| Boot Block Architecture | Bottom boot (GL) | Bottom boot (GH suffix) |
| Program/Erase Supply | Single supply (no separate VPP required) | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Level MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Standby Current | [DATA_NEEDED: standby current] | — |
| Endurance | [DATA_NEEDED: program/erase cycles] | [DATA_NEEDED: program/erase cycles] |
| Organisasi | — | 8M x 16 |
| Technology | — | SLC NOR |
| Program/Erase Voltage | — | [DATA_NEEDED: program/erase voltage] |
| CFI Compliant | — | [DATA_NEEDED: CFI compliance] |
| Moisture Sensitivity Level | — | [DATA_NEEDED: MSL level] |