MC9S12A128BCFU vs MC9S12DG128CPV Perbandingan
Perbandingan bersamaan detil MC9S12A128BCFU dari NXP Semiconductors dan MC9S12DG128CPV dari NXP Semiconductors. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
NXP Semiconductors
MC9S12A128BCFU - HCS12 16-Bit MCU 128KB Flash 80-QFP | NXP
MC9S12A128BCFU ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | MC9S12A128BCFU | MC9S12DG128CPV |
|---|---|---|
| Merek | NXP Semiconductors | NXP Semiconductors |
| Kategori | Microcontrollers | Microcontrollers |
| Status Lingkungan Hidup | Aktif | Aktif |
| Core | HCS12 CPU (16-bit CISC) | — |
| Maximum CPU Frequency | 25 MHz | — |
| Program Memory Size | 128 KB (128K x 8) Flash | — |
| RAM Size | 4 KB | — |
| EEPROM Size | 2 KB | — |
| Number of I/O Pins | 59 | 91 |
| ADC | 8-channel, 10-bit | — |
| Tegangan Pemuat | 5 V | — |
| Paket | 80-QFP (14x14 mm) | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -40C to +85C (industrial) | — |
| Oscillator Type | External (crystal/resonator or external clock) | — |
| Connectivity | CAN, SCI, SPI | — |
| Level MSL | [DATA_NEEDED: MSL rating] | 3 (168 hours) |
| Status RoHS | Compliant (per part stack listing) | [DATA_NEEDED: RoHS status from manufacturer] |
| Peripheral Highlights | 8-ch 10-bit ADC, PWM, SCI/SPI, CAN 2.0, SIM | — |
| Core Architecture | — | HCS12 (16-bit CISC) |
| Maximum CPU Clock | — | 25 MHz |
| Program Memory (Flash) | — | 128 KB (128K x 8) |
| Data Memory (RAM) | — | 8 KB |
| EEPROM | — | 2 KB |
| Paket / Case | — | 112-LQFP (20 x 20 mm) |
| Analog-to-Digital Converter | — | 8-channel, 10-bit ATD |
| CAN Modules | — | Up to 3 x MSCAN (CAN 2.0A/B) |
| Serial Interfaces | — | 2 x SCI (UART), 1 x SPI, 1 x I2C |
| Timer | — | Enhanced Capture Timer (ECT), 8 channels |
| Operating Voltage | — | 4.5 V to 5.5 V (single 5V supply) |
| Suhu Kerja | — | -40 C to +125 C (automotive) |
| Debug Interface | — | Background Debug Mode (BDM) |
| Flash Endurance | — | 100,000 write/erase cycles (typical) |