MC9S12DP512CPV vs MC9S12DG128CPV Perbandingan
Perbandingan bersamaan detil MC9S12DP512CPV dari NXP Semiconductors dan MC9S12DG128CPV dari NXP Semiconductors. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
NXP Semiconductors
MC9S12DP512CPV - 16-Bit HCS12 MCU, 512KB Flash, 112-LQFP | NXP
MC9S12DP512CPV ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | MC9S12DP512CPV | MC9S12DG128CPV |
|---|---|---|
| Merek | NXP Semiconductors | NXP Semiconductors |
| Kategori | Microcontrollers | Microcontrollers |
| Status Lingkungan Hidup | Aktif | Aktif |
| Core | HCS12 (16-bit) | — |
| Bus Frequency | 25 MHz | — |
| Program Memory (Flash) | 512 KB (512K x 8) | 128 KB (128K x 8) |
| RAM Size | 12 KB (12K x 8) | — |
| EEPROM | 4 KB | 2 KB |
| Number of I/O Lines | 91 | — |
| Paket / Case | 112-LQFP (20 x 20 mm) | 112-LQFP (20 x 20 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Tegangan Pemuat | 5.0 V (4.5 V to 5.5 V) | — |
| Suhu Kerja | -40 C to +85 C (industrial) | -40 C to +125 C (automotive) |
| ADC | 2 x 8-channel, 10-bit | — |
| PWM Channels | 8 | — |
| Enhanced Capture Timer | 8-channel 16-bit ECT | — |
| SCI (UART) | 2 | — |
| SPI | 1 | — |
| I2C | 1 | — |
| CAN | 1 x CAN 2.0 | — |
| Oscillator | Internal PLL with external crystal | — |
| Debug Interface | BDM (Background Debug Mode) | Background Debug Mode (BDM) |
| Process Technology | 0.25 um Flash | — |
| Status RoHS | Compliant (lead-free) | [DATA_NEEDED: RoHS status from manufacturer] |
| Core Architecture | — | HCS12 (16-bit CISC) |
| Maximum CPU Clock | — | 25 MHz |
| Data Memory (RAM) | — | 8 KB |
| Number of I/O Pins | — | 91 |
| Analog-to-Digital Converter | — | 8-channel, 10-bit ATD |
| CAN Modules | — | Up to 3 x MSCAN (CAN 2.0A/B) |
| Serial Interfaces | — | 2 x SCI (UART), 1 x SPI, 1 x I2C |
| Timer | — | Enhanced Capture Timer (ECT), 8 channels |
| Operating Voltage | — | 4.5 V to 5.5 V (single 5V supply) |
| Level MSL | — | 3 (168 hours) |
| Flash Endurance | — | 100,000 write/erase cycles (typical) |