MC9S12DP512CPV vs MC9S12DG128CPV Karşılaştırma

Ayrıntılı yan yana karşılaştırma MC9S12DP512CPV tarafından NXP Semiconductors ve MC9S12DG128CPV tarafından NXP SemiconductorsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

NXP Semiconductors
MC9S12DP512CPV MC9S12DP512CPV - 16-Bit HCS12 MCU, 512KB Flash, 112-LQFP | NXP

MC9S12DP512CPV - 16-Bit HCS12 MCU, 512KB Flash, 112-LQFP | NXP

MC9S12DP512CPV ✓ Aktif
NXP Semiconductors
MC9S12DG128CPV MC9S12DG128CPV - 16-Bit HCS12 MCU, 128KB Flash | NXP

MC9S12DG128CPV - 16-Bit HCS12 MCU, 128KB Flash | NXP

MC9S12DG128CPV ✓ Aktif

Özellik Karşılaştırması

Parametre MC9S12DP512CPV MC9S12DG128CPV
Marka NXP Semiconductors NXP Semiconductors
Kategori Microcontrollers Microcontrollers
Yaşam Döngüsü Durumu Aktif Aktif
Core HCS12 (16-bit) —
Bus Frequency 25 MHz —
Program Memory (Flash) 512 KB (512K x 8) 128 KB (128K x 8)
RAM Size 12 KB (12K x 8) —
EEPROM 4 KB 2 KB
Number of I/O Lines 91 —
Paket / Kas 112-LQFP (20 x 20 mm) 112-LQFP (20 x 20 mm)
Montaj Türü Surface Mount Surface Mount
Besleme Gerilimi 5.0 V (4.5 V to 5.5 V) —
İşletim Sıcaklığı -40 C to +85 C (industrial) -40 C to +125 C (automotive)
ADC 2 x 8-channel, 10-bit —
PWM Channels 8 —
Enhanced Capture Timer 8-channel 16-bit ECT —
SCI (UART) 2 —
SPI 1 —
I2C 1 —
CAN 1 x CAN 2.0 —
Oscillator Internal PLL with external crystal —
Debug Interface BDM (Background Debug Mode) Background Debug Mode (BDM)
Process Technology 0.25 um Flash —
RoHS Durumu Compliant (lead-free) [DATA_NEEDED: RoHS status from manufacturer]
Core Architecture — HCS12 (16-bit CISC)
Maximum CPU Clock — 25 MHz
Data Memory (RAM) — 8 KB
Number of I/O Pins — 91
Analog-to-Digital Converter — 8-channel, 10-bit ATD
CAN Modules — Up to 3 x MSCAN (CAN 2.0A/B)
Serial Interfaces — 2 x SCI (UART), 1 x SPI, 1 x I2C
Timer — Enhanced Capture Timer (ECT), 8 channels
Operating Voltage — 4.5 V to 5.5 V (single 5V supply)
MSL Seviyesi — 3 (168 hours)
Flash Endurance — 100,000 write/erase cycles (typical)

Dökümanlar & Kaynaklar

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