MC9S12DP512CPVE vs MC9S12DG128CPV Perbandingan
Perbandingan bersamaan detil MC9S12DP512CPVE dari NXP Semiconductors dan MC9S12DG128CPV dari NXP Semiconductors. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | MC9S12DP512CPVE | MC9S12DG128CPV |
|---|---|---|
| Merek | NXP Semiconductors | NXP Semiconductors |
| Kategori | Microcontrollers | Microcontrollers |
| Status Lingkungan Hidup | Aktif | Aktif |
| Product Type | 16-bit HCS12 CISC microcontroller | — |
| Maximum Operating Frequency | 25 MHz | — |
| Internal Flash Memory | 512 KB | — |
| Internal RAM | 12 KB | — |
| EEPROM | 4 KB | 2 KB |
| ADC | Two 8-channel, 10-bit ADCs | — |
| Serial Communication Interfaces | 2 asynchronous serial communication interfaces | — |
| Enhanced Capture Timer | 8-channel IC/OC enhanced capture timer | — |
| Pulse-Width Modulator | 8-channel PWM | — |
| General-Purpose I/O | 91 pins | — |
| Paket | 112-pin LQFP (20x20) | — |
| Core Architecture | HCS12, CISC | HCS12 (16-bit CISC) |
| Operating Supply | 2.5 V / 5 V | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Series | MC9S12 | — |
| Tipe Memori | Flash | — |
| Automotive Positioning | MC9S12D family designed for automotive multiplexing applications | — |
| Maximum CPU Clock | — | 25 MHz |
| Program Memory (Flash) | — | 128 KB (128K x 8) |
| Data Memory (RAM) | — | 8 KB |
| Number of I/O Pins | — | 91 |
| Paket / Case | — | 112-LQFP (20 x 20 mm) |
| Analog-to-Digital Converter | — | 8-channel, 10-bit ATD |
| CAN Modules | — | Up to 3 x MSCAN (CAN 2.0A/B) |
| Serial Interfaces | — | 2 x SCI (UART), 1 x SPI, 1 x I2C |
| Timer | — | Enhanced Capture Timer (ECT), 8 channels |
| Operating Voltage | — | 4.5 V to 5.5 V (single 5V supply) |
| Suhu Kerja | — | -40 C to +125 C (automotive) |
| Level MSL | — | 3 (168 hours) |
| Debug Interface | — | Background Debug Mode (BDM) |
| Status RoHS | — | [DATA_NEEDED: RoHS status from manufacturer] |
| Flash Endurance | — | 100,000 write/erase cycles (typical) |