MPXHZ6115AC6U vs MPXH6115AC6U Perbandingan
Perbandingan bersamaan detil MPXHZ6115AC6U dari NXP Semiconductors dan MPXH6115AC6U dari NXP Semiconductors. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
NXP Semiconductors
MPXHZ6115AC6U - 15-115kPa Absolute Pressure Sensor, 5V | NXP
MPXHZ6115AC6U ✓ AktifNXP Semiconductors
MPXH6115AC6U - 15-115 kPa Absolute Pressure Sensor, 5V, 8-SOIC
MPXH6115AC6U ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | MPXHZ6115AC6U | MPXH6115AC6U |
|---|---|---|
| Merek | NXP Semiconductors | NXP Semiconductors |
| Kategori | Pressure Sensors | Pressure Sensors |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Pengukur | Absolute Pressure Sensor | — |
| Pressure Range | 15 kPa to 115 kPa (2.18 PSI to 16.68 PSI) | — |
| Tipe Output | Analog Voltage | Analog, ratiometric to VCC |
| Rentang Tegangan Output | 0.2 V to 4.7 V (at VCC = 5 V) | 0.2 V to 4.7 V (at 5 V supply) |
| Supply Voltage (VCC) | 4.75 V to 5.25 V (5 V typical) | — |
| Sensitivity | 45.9 mV/kPa (typical) | 45.9 mV/kPa (typical) |
| Accuracy | ±1.5 % over -40 °C to +125 °C | — |
| Rentang Suhu Kerja | -40 °C to +125 °C | -40 C to +125 C |
| Compensated Temperature Range | 0 °C to +85 °C | 0 C to +85 C |
| Port Style | Top port, 3.3 mm (0.13 in) tube | — |
| Paket | 8-SOIC (0.335 in / 8.50 mm width), top port | 8-SOIC (0.335 inch, 8.50 mm width) Top Port |
| Tipe Mounting | Surface Mount | Surface Mount |
| Media Compatibility | Dry air, non-corrosive gases (PPS gel barrier) | — |
| On-chip Signal Conditioning | Yes (amplified, temperature-compensated, calibrated) | — |
| Level MSL | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL rating] |
| Status RoHS | Compliant | Compliant |
| Pressure Type | — | Absolute |
| Operating Pressure Range | — | 2.18 PSI to 16.68 PSI (15 kPa to 115 kPa) |
| Tegangan Pemuat | — | 4.75 V to 5.25 V (5 V typical) |
| Port Type | — | Male - 0.13 inch (3.3 mm) Tube, Top |
| Signal Conditioning | — | On-chip bipolar op-amp + thin-film resistor network |
| Technology | — | Piezoresistive MEMS, monolithic silicon |
| Port Orientation | — | Top-side vertical |