MRF6S21100HR3 vs MRF8S21100HSR3 Perbandingan
Perbandingan bersamaan detil MRF6S21100HR3 dari NXP Semiconductors dan MRF8S21100HSR3 dari NXP Semiconductors. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
NXP Semiconductors
MRF8S21100HSR3 - 100W RF Power MOSFET, 2.11-2.17 GHz | NXP
MRF8S21100HSR3 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | MRF6S21100HR3 | MRF8S21100HSR3 |
|---|---|---|
| Merek | NXP Semiconductors | NXP Semiconductors |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Transistor | LDMOS (N-Channel Enhancement-Mode Lateral MOSFET) | N-Channel Enhancement-Mode Lateral MOSFET |
| Configuration | Single | Single, push-pull N/A |
| Frequency Band | 2.11 GHz to 2.17 GHz | — |
| Output Power (Average) | 23 W (W-CDMA, CW equivalent ~100 W PEP) | — |
| Power Gain (Typ) | 15.9 dB at 2.14 GHz | — |
| Drain-Source Voltage Rating (VDS max) | 68 V | — |
| Test Supply Voltage (VDD) | 28 V | — |
| Quiescent Drain Current (IDQ) | 950 mA | — |
| Test Drain Current | 950 mA | — |
| Paket | NI-780H-2L (ceramic flange) | — |
| Tipe Mounting | Surface Mount / bolt-down flange | Chassis / flange mount, screw-down |
| Maximum Power Dissipation (Abs) | 388 W | — |
| Operating Mode | Class AB (PCN/PCS/cellular, WLL, TD-SCDMA) | — |
| Terminal Position | Dual | — |
| Lead Free Status | [DATA_NEEDED: RoHS/lead-free explicit statement] | — |
| Status RoHS | [DATA_NEEDED: explicit RoHS compliance statement] | Compliant (per NXP product family) |
| Technology | — | LDMOS (Laterally Diffused MOSFET) |
| Drain-Source Voltage (V(BR)DSS) | — | 65 V |
| Operating Drain Voltage (VDD) | — | 28 V nominal |
| Frequency Range | — | 2110 MHz to 2170 MHz |
| Test Frequency | — | 2.14 GHz |
| Output Power (CW, typical) | — | 100 W |
| Average Output Power (W-CDMA) | — | 24 W |
| Power Gain (typ) | — | 18.3 dB at 2.14 GHz |
| Drain Current (ID, max) | — | [DATA_NEEDED: max ID rating] |
| Paket / Case | — | NI-780S (Case 465A-06), 3-pin ceramic flange |
| Operating Class | — | Class AB or Class C |
| Application | — | W-CDMA, LTE base-station power amplifiers |
| Lead-Free | — | Yes |