MRF8S9102NR3 vs MRF8S9170NR3 Perbandingan
Perbandingan bersamaan detil MRF8S9102NR3 dari NXP Semiconductors dan MRF8S9170NR3 dari NXP Semiconductors. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | MRF8S9102NR3 | MRF8S9170NR3 |
|---|---|---|
| Merek | NXP Semiconductors | NXP Semiconductors |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors |
| Part Family | MRF8S9102N / HV8 series | — |
| Tipe Transistor | N-Channel Lateral Enhancement-Mode MOSFET | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Application | RF Power Amplifier, W-CDMA base station | — |
| Operating Frequency Range | 865 MHz to 960 MHz | — |
| Test Frequency | 920 MHz | — |
| Drain-Source Operating Voltage (VDS) | 28 V (typical test condition) | — |
| Drain-Source Breakdown Voltage (VDSS) | 70 V (max) | — |
| Average Output Power (POUT) | 28 W | — |
| Drain Current (ID) at bias | 750 mA | — |
| Power Gain (Gp) | 23.1 dB | — |
| Modulation Format | Single W-CDMA (also Class AB/C capable) | — |
| Paket | OM-780-2 (3-pin ceramic, flange mount) | OM-780-2 (ceramic flange) |
| Tipe Mounting | Chassis / flange mount with bolt-down thermal pad | Surface Mount / Flange Mount (bolt-down thermal pad) |
| Jumlah Pin | 3 | — |
| Status RoHS | [DATA_NEEDED: rohs compliance] | — |
| Operating Mode | Class AB or Class C | — |
| Technology | — | RF Power LDMOS |
| Frequency Range | — | 920 MHz to 960 MHz |
| Output Power (Average, W-CDMA) | — | 50 W |
| Power Gain (Typical) | — | 19.3 dB at 920 MHz, 28 V, 1 A quiescent bias |
| Drain-Source Voltage Rating (Vdss) | — | 70 V |
| Operating Drain Voltage (Test Condition) | — | 28 V |
| Quiescent Bias Current (Idq, Test Condition) | — | 1 A |
| Drain Current (Operating) | — | [DATA_NEEDED: typical operating Id at 50 W Pout] |
| Suhu Kerja | — | [DATA_NEEDED: Tj max and operating range from datasheet] |
| Class of Operation | — | Class AB, Class C (W-CDMA) |
| Lead-Free / RoHS | — | Lead Free (per digchip listing) |
| ESD Protection | — | [DATA_NEEDED: ESD class rating from datasheet] |
| Impedance Characterization | — | Series-equivalent large-signal impedance parameters provided |
| Test Conditions Note | — | 100% PAR tested for guaranteed output power capability |