MT41K128M16JT-125:K vs K4B4G1646E-BYK000 Perbandingan
Perbandingan bersamaan detil MT41K128M16JT-125:K dari Micron Technology dan K4B4G1646E-BYK000 dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Micron Technology
MT41K128M16JT-125:K - 2Gb DDR3L SDRAM 1600MT/s | Micron Technology
MT41K128M16JT-125:K ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | MT41K128M16JT-125:K | K4B4G1646E-BYK000 |
|---|---|---|
| Merek | Micron Technology | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR3L SDRAM | DDR3L SDRAM |
| Memory Capacity | 2 Gbit | — |
| Organisasi | 128M x 16 | 256M x 16 |
| Antarmuka | Parallel | Parallel |
| Clock Frequency | 800 MHz (1600 MT/s data rate) | 800 MHz |
| Access Time (Clock Cycle) | 13.75 ns | — |
| Supply Voltage (VDD) | 1.35 V (1.283 V to 1.45 V) | 1.35 V (DDR3L), 1.5 V compatible (DDR3) |
| Prefetch Architecture | 8n-bit | — |
| Paket | 96-FBGA (8x14 mm) | 96-FBGA (BYK) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | 0C to +95C | [DATA_NEEDED: operating temperature range] |
| Self Refresh | Auto self-refresh | — |
| Write Leveling | Supported | — |
| Data Mask | Supported | — |
| On-Die Termination | Dynamic ODT supported | — |
| Asynchronous Reset | Supported | — |
| Status RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Ukuran Memori | — | 4 Gbit |
| Speed Grade | — | DDR3-1600 (1.25 ns clock cycle) |
| CAS Latency (CL) | — | [DATA_NEEDED: CAS latency - 1.25 ns CL grade indicates CL11 but not explicitly stated in provided data] |
| Number of Banks | — | [DATA_NEEDED: bank count] |
| Die Process | — | Samsung E-die |
| Fitur | — | Auto precharge, asynchronous reset, ZQ calibration, dynamic on-chip termination, data mask |
| Access Time | — | 1.25 ns |