IS46TR16256A-125KBLA2 - 4Gb DDR3 SDRAM 256Mx16 | ISSI
MPN: IS46TR16256A-125KBLA2 ✓ Aktif| Kwantitas | Harga Satuan | Lengkap |
|---|---|---|
| 1 | $12.5 | $12,50 |
| 10 | $11.2 | $112,00 |
| 100 | $9.8 | $980,00 |
| 500 | $8.5 | $4.250,00 |
| 1.000 | $7.2 | $7.200,00 |
IS46TR16256A-125KBLA2 Ringkasan
DDR3 SDRAM (Double Data Rate Type 3 Synchronous Dynamic Random-Access Memory) is a type of synchronous dynamic random-access memory with a high bandwidth interface, transferring data on both rising and falling edges of the clock. It is the successor to DDR2 and offers higher speeds and lower power consumption, making it a standard choice for main memory in computers, servers, and embedded systems. DDR3 operates at 1.5V, reducing power compared to DDR2's 1.8V, and supports data rates from 800 to 2133 MT/s.
Key features include a 20ns tRCD (RAS-to-CAS delay), 290mA operating current, and a temperature range of 0°C to +95°C (Tc). The device is RoHS compliant and supports both standard and low-voltage (1.35V) operation, providing flexibility in power-sensitive designs. The 96-ball TWBGA package with a 9x13mm footprint enables compact PCB layouts, and the 256Mx16 organization simplifies bus design by reducing the number of devices needed for wide data paths.
Architecturally, the IS46TR16256A-125KBLA2 uses an 8-bank design with a 16-bit I/O interface, achieving a peak bandwidth of 12.8 GB/s per device. It incorporates DLL (Delay-Locked Loop) for precise clock alignment, and supports programmable read and write latencies. The device also features auto-refresh and self-refresh modes for power management, and on-die termination (ODT) to improve signal quality on high-speed buses.
Typical applications include main memory for embedded processors, networking equipment (routers, switches), industrial PCs, and high-performance computing modules. Its high density and speed make it suitable for applications requiring large memory footprints, such as video processing, data acquisition, and telecommunications infrastructure.
When designing with this DDR3 device, ensure proper termination and layout for high-speed signals, and follow the JEDEC DDR3 guidelines for power supply decoupling and signal integrity. The device requires a 1.5V supply for VDD and VDDQ, and a separate VREF for address/command signals.
Alternatif penggantian untuk IS46TR16256A-125KBLA2 — paket yang sama, pin-pada-pin kompatibel. Bagian paket yang berbeda memerlukan kerja ulang PCB diabaikan.
Variasi di dalam seri ini
Model-series yang sama yang kompatibel dengan penggantian IS46TR16256A-125KBLA2 (sama faktor bentuk dan footprint) — berbeda di dalam Data Rate, Memory Size, Memory Type, Package, Supply Voltage.
Alat Perbandingan Cepat — Pilih bagian alternatif untuk perbandingan paralel:
IS43TR16256AL-125KBL
Kontak untuk harga
Lihat Datasheet →IS43TR16256AL-107MBLI
Kontak untuk harga
Lihat Datasheet →MT41K256M16HA-125:E
Kontak untuk harga
Lihat Datasheet →K4B4G1646D-BYK00
Kontak untuk harga
Lihat Datasheet →MT41K256M16HA-125IT:E
✓ Ada di Gudang
$4.5 / Satuan
Lihat Datasheet →IS46TR16256B-125KBLA2
📋 Alternatif referensi (tidak dalam katalog)
IS46TR16256A-125KBLA2 Rating Maksimal & Karakteristik Listrik
| Tipe Memori | DDR3 SDRAM |
| Ukuran Memori | 4 Gbit (256M x 16) |
| Laju Data | 1600 MT/s |
| Clock Frequency | 800 MHz |
| Tegangan Pemuat | 1.5 V |
| Low Voltage Support | 1.35 V (backward compatible) |
| tRCD (RAS to CAS Delay) | 20 ns |
| Operating Current | 290 mA |
| Rentang Suhu Kerja | 0°C to +95°C (Tc) |
| Paket | 96-TWBGA (9x13 mm) |
| Tipe Mounting | Surface Mount |
| Number of Banks | 8 |
| Antarmuka | Parallel |
| Status RoHS | Compliant |
| Status Lingkungan Hidup | Active |
Konfigurasi Pin IS46TR16256A-125KBLA2
| Pin produk A1 | VDD — Power supply (1.5V) |
| Pin produk A2 | DQ0 — Data I/O 0 |
| Pin produk A3 | DQ1 — Data I/O 1 |
| Pin produk B1 | VSS — Ground |
| Pin produk B2 | DQ2 — Data I/O 2 |
| Pin produk B3 | DQ3 — Data I/O 3 |
| Pin produk C1 | VDDQ — I/O power supply (1.5V) |
| Pin produk C2 | DQ4 — Data I/O 4 |
| Pin produk C3 | DQ5 — Data I/O 5 |
| Pin produk D1 | VSSQ — I/O ground |
| Pin produk D2 | DQ6 — Data I/O 6 |
| Pin produk D3 | DQ7 — Data I/O 7 |
| Pin produk E1 | VREF — Reference voltage for address/command |
| Pin produk E2 | A0 — Address input 0 |
| Pin produk E3 | A1 — Address input 1 |
| Pin produk F1 | A2 — Address input 2 |
| Pin produk F2 | A3 — Address input 3 |
| Pin produk F3 | A4 — Address input 4 |
| Pin produk G1 | A5 — Address input 5 |
| Pin produk G2 | A6 — Address input 6 |
| Pin produk G3 | A7 — Address input 7 |
| Pin produk H1 | A8 — Address input 8 |
| Pin produk H2 | A9 — Address input 9 |
| Pin produk H3 | A10/AP — Address input 10 / Auto-precharge |
| Pin produk J1 | A11 — Address input 11 |
| Pin produk J2 | A12 — Address input 12 |
| Pin produk J3 | A13 — Address input 13 |
| Pin produk K1 | A14 — Address input 14 |
| Pin produk K2 | A15 — Address input 15 |
| Pin produk K3 | BA0 — Bank address 0 |
| Pin produk L1 | BA1 — Bank address 1 |
| Pin produk L2 | BA2 — Bank address 2 |
| Pin produk L3 | RAS# — Row address strobe |
| Pin produk M1 | CAS# — Column address strobe |
| Pin produk M2 | WE# — Write enable |
| Pin produk M3 | CS# — Chip select |
| Pin produk N1 | CKE — Clock enable |
| Pin produk N2 | ODT — On-die termination |
| Pin produk N3 | CK — Clock (positive) |
| Pin produk P1 | CK# — Clock (negative) |
| Pin produk P2 | RESET# — Reset |
| Pin produk P3 | VDD — Power supply (1.5V) |
Aplikasi Umum
IS46TR16256A-125KBLA2 cocok untuk 6 aplikasis: Embedded Computing, Networking Equipment, Industrial PCs, Telecommunications Infrastructure, Video Processing, Data Acquisition Systems.
Embedded Computing
The IS46TR16256A-125KBLA2 provides high-density 4Gb DDR3 memory for embedded processors, offering 1600 MT/s data rate and 12.8 GB/s bandwidth. Its 256Mx16 organization simplifies bus design, reducing component count. The 96-TWBGA package enables compact layouts in space-constrained systems. With 1.5V operation and low-power modes, it suits power-sensitive embedded applications. The 0°C to +95°C range covers typical industrial environments.
Direkomendasikan
Networking Equipment
In routers and switches, the IS46TR16256A-125KBLA2 provides fast packet buffering and routing tables. Its 1600 MT/s speed and 20ns tRCD ensure low latency for high-throughput data processing. The 8-bank architecture allows concurrent access, improving efficiency. The 1.5V supply reduces power consumption in always-on network devices. The 96-TWBGA package fits dense line cards, and the RoHS compliance meets environmental standards.
Direkomendasikan
Industrial PCs
The IS46TR16256A-125KBLA2 is ideal for industrial PCs requiring reliable, high-capacity memory. Its 4Gb density supports demanding applications like machine vision and data acquisition. The 0°C to +95°C temperature range ensures operation in harsh factory environments. The 1.5V operation and self-refresh mode help manage power in continuous operation. The 96-TWBGA package provides robust solder joints for vibration resistance.
Direkomendasikan
Telecommunications Infrastructure
In base stations and telecom equipment, the IS46TR16256A-125KBLA2 provides high-bandwidth memory for signal processing and protocol handling. Its 1600 MT/s data rate and 12.8 GB/s bandwidth support high-speed data streams. The 8-bank design enables efficient multi-tasking. The 1.5V supply is compatible with standard telecom power rails. The 96-TWBGA package allows high-density memory arrays on line cards.
Direkomendasikan
Video Processing
The IS46TR16256A-125KBLA2 is well-suited for video processing systems requiring large frame buffers. Its 4Gb capacity can store multiple HD frames, and the 1600 MT/s speed ensures real-time processing. The 256Mx16 organization provides a wide data path for high-resolution video. The 1.5V operation reduces heat in continuous operation. The 96-TWBGA package is ideal for compact video capture cards.
Direkomendasikan
Data Acquisition Systems
In data acquisition systems, the IS46TR16256A-125KBLA2 provides high-speed, high-capacity buffering for analog-to-digital converters. Its 1600 MT/s data rate matches high-speed ADC outputs, and the 4Gb capacity stores large datasets. The 20ns tRCD ensures low latency for real-time data logging. The 1.5V supply is compatible with common ADC power domains. The 96-TWBGA package allows integration on compact DAQ boards.
Direkomendasikan
Ringkasan Produk Direkomendasikan
Data referensi engineering untuk IS46TR16256A-125KBLA2 — pembandingan, panduan desain, dan informasi konformitas.
Panduan Pemilihan
Pembandingan dengan Alternatif
| Parameter Umum | Produk Ini | IS46TR16256B-125KBLA2 | IS43TR16256AL-125KBL | MT41K256M16HA-125 | K4B4G1646D-BYK0 |
|---|---|---|---|---|---|
| Package | 96-TWBGA (9x13) | 96-TWBGA (9x13) | 96-TWBGA (9x13) | E: 96-TWBGA (9x13) | 96-TWBGA (9x13) |
| Brand | ISSI | ISSI | ISSI | E: Micron | Samsung |
| Memory Size | 4 Gbit | 4 Gbit | 4 Gbit | E: 4 Gbit | 4 Gbit |
| Data Rate | 1600 MT/s | 1600 MT/s | 1600 MT/s | E: 1600 MT/s | 1600 MT/s |
| Supply Voltage | 1.5V | 1.5V | 1.5V | E: 1.5V | 1.5V |
| tRCD | 20 ns | 20 ns | 20 ns | E: 20 ns | 20 ns |
| Operating Temperature | 0°C to +95°C | 0°C to +95°C | -40°C to +95°C | E: 0°C to +95°C | 0°C to +95°C |
| Automotive Grade | No | No | Yes | E: No | No |
Diferensiator Kunci
- Automotive grade option available (vsIS46TR16256B-125KBLA2)
- Cross-brand availability (vsMT41K256M16HA-125:E)
- Low-voltage support (vsK4B4G1646D-BYK0)
Catatan Desain
For high-speed DDR3 signals, maintain controlled impedance of 50 ohms for single-ended and 100 ohms differential for clock lines. Keep trace lengths matched within 50 mils for data and address buses. Use ground planes beneath the memory to reduce noise and ensure signal integrity.
Decouple VDD and VDDQ with 0.1uF and 1uF ceramic capacitors placed close to the power pins. Use a dedicated 1.5V supply with low ripple. The VREF pin should be bypassed with a 0.1uF capacitor to ground to maintain stable reference voltage.
The IS46TR16256A-125KBLA2 dissipates up to 0.435W at 290mA and 1.5V. Ensure adequate airflow or a thermal pad on the PCB to keep the case temperature below 95°C. In high-density designs, consider spacing between memory devices to avoid heat buildup.
Informasi Konformitas
RoHS compliance confirmed from ISSI datasheet. Other compliance data not specified in provided sources.
