IS46TR16256A-125KBLA2 - 4Gb DDR3 SDRAM 256Mx16 | ISSI
MPN： IS46TR16256A-125KBLA2 ✓ 啟用中| 數量 | 單價 | 小計 |
|---|---|---|
| 1 | $12.5 | $12.50 |
| 10 | $11.2 | $112.00 |
| 100 | $9.8 | $980.00 |
| 500 | $8.5 | $4,250.00 |
| 1,000 | $7.2 | $7,200.00 |
IS46TR16256A-125KBLA2 概覽
DDR3 SDRAM (Double Data Rate Type 3 Synchronous Dynamic Random-Access Memory) is a type of synchronous dynamic random-access memory with a high bandwidth interface, transferring data on both rising and falling edges of the clock. It is the successor to DDR2 and offers higher speeds and lower power consumption, making it a standard choice for main memory in computers, servers, and embedded systems. DDR3 operates at 1.5V, reducing power compared to DDR2's 1.8V, and supports data rates from 800 to 2133 MT/s.
Key features include a 20ns tRCD (RAS-to-CAS delay), 290mA operating current, and a temperature range of 0°C to +95°C (Tc). The device is RoHS compliant and supports both standard and low-voltage (1.35V) operation, providing flexibility in power-sensitive designs. The 96-ball TWBGA package with a 9x13mm footprint enables compact PCB layouts, and the 256Mx16 organization simplifies bus design by reducing the number of devices needed for wide data paths.
Architecturally, the IS46TR16256A-125KBLA2 uses an 8-bank design with a 16-bit I/O interface, achieving a peak bandwidth of 12.8 GB/s per device. It incorporates DLL (Delay-Locked Loop) for precise clock alignment, and supports programmable read and write latencies. The device also features auto-refresh and self-refresh modes for power management, and on-die termination (ODT) to improve signal quality on high-speed buses.
Typical applications include main memory for embedded processors, networking equipment (routers, switches), industrial PCs, and high-performance computing modules. Its high density and speed make it suitable for applications requiring large memory footprints, such as video processing, data acquisition, and telecommunications infrastructure.
When designing with this DDR3 device, ensure proper termination and layout for high-speed signals, and follow the JEDEC DDR3 guidelines for power supply decoupling and signal integrity. The device requires a 1.5V supply for VDD and VDDQ, and a separate VREF for address/command signals.
直接替換替代品，適用於 IS46TR16256A-125KBLA2 — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： IS46TR16256A-125KBLA2 （相同外形與佔位） — 差異在於 Data Rate, Memory Size, Memory Type, Package, Supply Voltage.
快速比較工具 — 選擇替代零件進行並排比較：
IS43TR16256AL-125KBL
聯絡詢價
查看資料表 →IS43TR16256AL-107MBLI
聯絡詢價
查看資料表 →MT41K256M16HA-125:E
聯絡詢價
查看資料表 →K4B4G1646D-BYK00
聯絡詢價
查看資料表 →MT41K256M16HA-125IT:E
✓ 有庫存
$4.5 / 單位
查看資料表 →IS46TR16256B-125KBLA2
📋 參考替代品（不在目錄中）
IS46TR16256A-125KBLA2 最大額定值與電氣特性
| 記憶體類型 | DDR3 SDRAM |
| 記憶體容量 | 4 Gbit (256M x 16) |
| 資料速率 | 1600 MT/s |
| Clock Frequency | 800 MHz |
| 供應電壓 | 1.5 V |
| Low Voltage Support | 1.35 V (backward compatible) |
| tRCD (RAS to CAS Delay) | 20 ns |
| Operating Current | 290 mA |
| 工作溫度範圍 | 0°C to +95°C (Tc) |
| 封裝 | 96-TWBGA (9x13 mm) |
| 安裝類型 | Surface Mount |
| Number of Banks | 8 |
| 介面 | Parallel |
| RoHS 狀態 | Compliant |
| 生命週期狀態 | Active |
IS46TR16256A-125KBLA2 腳位配置
| 腳位 A1 | VDD — Power supply (1.5V) |
| 腳位 A2 | DQ0 — Data I/O 0 |
| 腳位 A3 | DQ1 — Data I/O 1 |
| 腳位 B1 | VSS — Ground |
| 腳位 B2 | DQ2 — Data I/O 2 |
| 腳位 B3 | DQ3 — Data I/O 3 |
| 腳位 C1 | VDDQ — I/O power supply (1.5V) |
| 腳位 C2 | DQ4 — Data I/O 4 |
| 腳位 C3 | DQ5 — Data I/O 5 |
| 腳位 D1 | VSSQ — I/O ground |
| 腳位 D2 | DQ6 — Data I/O 6 |
| 腳位 D3 | DQ7 — Data I/O 7 |
| 腳位 E1 | VREF — Reference voltage for address/command |
| 腳位 E2 | A0 — Address input 0 |
| 腳位 E3 | A1 — Address input 1 |
| 腳位 F1 | A2 — Address input 2 |
| 腳位 F2 | A3 — Address input 3 |
| 腳位 F3 | A4 — Address input 4 |
| 腳位 G1 | A5 — Address input 5 |
| 腳位 G2 | A6 — Address input 6 |
| 腳位 G3 | A7 — Address input 7 |
| 腳位 H1 | A8 — Address input 8 |
| 腳位 H2 | A9 — Address input 9 |
| 腳位 H3 | A10/AP — Address input 10 / Auto-precharge |
| 腳位 J1 | A11 — Address input 11 |
| 腳位 J2 | A12 — Address input 12 |
| 腳位 J3 | A13 — Address input 13 |
| 腳位 K1 | A14 — Address input 14 |
| 腳位 K2 | A15 — Address input 15 |
| 腳位 K3 | BA0 — Bank address 0 |
| 腳位 L1 | BA1 — Bank address 1 |
| 腳位 L2 | BA2 — Bank address 2 |
| 腳位 L3 | RAS# — Row address strobe |
| 腳位 M1 | CAS# — Column address strobe |
| 腳位 M2 | WE# — Write enable |
| 腳位 M3 | CS# — Chip select |
| 腳位 N1 | CKE — Clock enable |
| 腳位 N2 | ODT — On-die termination |
| 腳位 N3 | CK — Clock (positive) |
| 腳位 P1 | CK# — Clock (negative) |
| 腳位 P2 | RESET# — Reset |
| 腳位 P3 | VDD — Power supply (1.5V) |
典型應用
IS46TR16256A-125KBLA2 適用於 6 應用s: Embedded Computing, Networking Equipment, Industrial PCs, Telecommunications Infrastructure, Video Processing, Data Acquisition Systems.
Embedded Computing
The IS46TR16256A-125KBLA2 provides high-density 4Gb DDR3 memory for embedded processors, offering 1600 MT/s data rate and 12.8 GB/s bandwidth. Its 256Mx16 organization simplifies bus design, reducing component count. The 96-TWBGA package enables compact layouts in space-constrained systems. With 1.5V operation and low-power modes, it suits power-sensitive embedded applications. The 0°C to +95°C range covers typical industrial environments.
推薦
Networking Equipment
In routers and switches, the IS46TR16256A-125KBLA2 provides fast packet buffering and routing tables. Its 1600 MT/s speed and 20ns tRCD ensure low latency for high-throughput data processing. The 8-bank architecture allows concurrent access, improving efficiency. The 1.5V supply reduces power consumption in always-on network devices. The 96-TWBGA package fits dense line cards, and the RoHS compliance meets environmental standards.
推薦
Industrial PCs
The IS46TR16256A-125KBLA2 is ideal for industrial PCs requiring reliable, high-capacity memory. Its 4Gb density supports demanding applications like machine vision and data acquisition. The 0°C to +95°C temperature range ensures operation in harsh factory environments. The 1.5V operation and self-refresh mode help manage power in continuous operation. The 96-TWBGA package provides robust solder joints for vibration resistance.
推薦
Telecommunications Infrastructure
In base stations and telecom equipment, the IS46TR16256A-125KBLA2 provides high-bandwidth memory for signal processing and protocol handling. Its 1600 MT/s data rate and 12.8 GB/s bandwidth support high-speed data streams. The 8-bank design enables efficient multi-tasking. The 1.5V supply is compatible with standard telecom power rails. The 96-TWBGA package allows high-density memory arrays on line cards.
推薦
Video Processing
The IS46TR16256A-125KBLA2 is well-suited for video processing systems requiring large frame buffers. Its 4Gb capacity can store multiple HD frames, and the 1600 MT/s speed ensures real-time processing. The 256Mx16 organization provides a wide data path for high-resolution video. The 1.5V operation reduces heat in continuous operation. The 96-TWBGA package is ideal for compact video capture cards.
推薦
Data Acquisition Systems
In data acquisition systems, the IS46TR16256A-125KBLA2 provides high-speed, high-capacity buffering for analog-to-digital converters. Its 1600 MT/s data rate matches high-speed ADC outputs, and the 4Gb capacity stores large datasets. The 20ns tRCD ensures low latency for real-time data logging. The 1.5V supply is compatible with common ADC power domains. The 96-TWBGA package allows integration on compact DAQ boards.
推薦
推薦產品摘要
工程參考資料，適用於 IS46TR16256A-125KBLA2 — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | IS46TR16256B-125KBLA2 | IS43TR16256AL-125KBL | MT41K256M16HA-125 | K4B4G1646D-BYK0 |
|---|---|---|---|---|---|
| Package | 96-TWBGA (9x13) | 96-TWBGA (9x13) | 96-TWBGA (9x13) | E: 96-TWBGA (9x13) | 96-TWBGA (9x13) |
| Brand | ISSI | ISSI | ISSI | E: Micron | Samsung |
| Memory Size | 4 Gbit | 4 Gbit | 4 Gbit | E: 4 Gbit | 4 Gbit |
| Data Rate | 1600 MT/s | 1600 MT/s | 1600 MT/s | E: 1600 MT/s | 1600 MT/s |
| Supply Voltage | 1.5V | 1.5V | 1.5V | E: 1.5V | 1.5V |
| tRCD | 20 ns | 20 ns | 20 ns | E: 20 ns | 20 ns |
| Operating Temperature | 0°C to +95°C | 0°C to +95°C | -40°C to +95°C | E: 0°C to +95°C | 0°C to +95°C |
| Automotive Grade | No | No | Yes | E: No | No |
主要差異化特點
- Automotive grade option available (對比IS46TR16256B-125KBLA2)
- Cross-brand availability (對比MT41K256M16HA-125:E)
- Low-voltage support (對比K4B4G1646D-BYK0)
設計說明
For high-speed DDR3 signals, maintain controlled impedance of 50 ohms for single-ended and 100 ohms differential for clock lines. Keep trace lengths matched within 50 mils for data and address buses. Use ground planes beneath the memory to reduce noise and ensure signal integrity.
Decouple VDD and VDDQ with 0.1uF and 1uF ceramic capacitors placed close to the power pins. Use a dedicated 1.5V supply with low ripple. The VREF pin should be bypassed with a 0.1uF capacitor to ground to maintain stable reference voltage.
The IS46TR16256A-125KBLA2 dissipates up to 0.435W at 290mA and 1.5V. Ensure adequate airflow or a thermal pad on the PCB to keep the case temperature below 95°C. In high-density designs, consider spacing between memory devices to avoid heat buildup.
合規資訊
RoHS compliance confirmed from ISSI datasheet. Other compliance data not specified in provided sources.
