IS46TR16256A-125KBLA2 - 4Gb DDR3 SDRAM 256Mx16 | ISSI
Référence : IS46TR16256A-125KBLA2 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $12.5 | $12,50 |
| 10 | $11.2 | $112,00 |
| 100 | $9.8 | $980,00 |
| 500 | $8.5 | $4 250,00 |
| 1 000 | $7.2 | $7 200,00 |
IS46TR16256A-125KBLA2 Présentation
DDR3 SDRAM (Double Data Rate Type 3 Synchronous Dynamic Random-Access Memory) is a type of synchronous dynamic random-access memory with a high bandwidth interface, transferring data on both rising and falling edges of the clock. It is the successor to DDR2 and offers higher speeds and lower power consumption, making it a standard choice for main memory in computers, servers, and embedded systems. DDR3 operates at 1.5V, reducing power compared to DDR2's 1.8V, and supports data rates from 800 to 2133 MT/s.
Key features include a 20ns tRCD (RAS-to-CAS delay), 290mA operating current, and a temperature range of 0°C to +95°C (Tc). The device is RoHS compliant and supports both standard and low-voltage (1.35V) operation, providing flexibility in power-sensitive designs. The 96-ball TWBGA package with a 9x13mm footprint enables compact PCB layouts, and the 256Mx16 organization simplifies bus design by reducing the number of devices needed for wide data paths.
Architecturally, the IS46TR16256A-125KBLA2 uses an 8-bank design with a 16-bit I/O interface, achieving a peak bandwidth of 12.8 GB/s per device. It incorporates DLL (Delay-Locked Loop) for precise clock alignment, and supports programmable read and write latencies. The device also features auto-refresh and self-refresh modes for power management, and on-die termination (ODT) to improve signal quality on high-speed buses.
Typical applications include main memory for embedded processors, networking equipment (routers, switches), industrial PCs, and high-performance computing modules. Its high density and speed make it suitable for applications requiring large memory footprints, such as video processing, data acquisition, and telecommunications infrastructure.
When designing with this DDR3 device, ensure proper termination and layout for high-speed signals, and follow the JEDEC DDR3 guidelines for power supply decoupling and signal integrity. The device requires a 1.5V supply for VDD and VDDQ, and a separate VREF for address/command signals.
Alternatives de remplacement direct pour IS46TR16256A-125KBLA2 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec IS46TR16256A-125KBLA2 (même facteur de forme et même empreinte) — différant par Data Rate, Memory Size, Memory Type, Package, Supply Voltage.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
IS43TR16256AL-125KBL
✓ En stock
$5.6 / unité
Voir la fiche technique →IS43TR16256AL-107MBLI
✓ En stock
$2 / unité
Voir la fiche technique →MT41K256M16HA-125:E
✓ En stock
$3.1 / unité
Voir la fiche technique →K4B4G1646D-BYK00
✓ En stock
$7.5 / unité
Voir la fiche technique →MT41K256M16HA-125IT:E
✓ En stock
$4.5 / unité
Voir la fiche technique →IS46TR16256B-125KBLA2
📋 Alternative de référence (hors catalogue)
IS46TR16256A-125KBLA2 Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR3 SDRAM |
| Taille de mémoire | 4 Gbit (256M x 16) |
| Débit de données | 1600 MT/s |
| Clock Frequency | 800 MHz |
| Tension d'alimentation | 1.5 V |
| Low Voltage Support | 1.35 V (backward compatible) |
| tRCD (RAS to CAS Delay) | 20 ns |
| Operating Current | 290 mA |
| Plage de température de fonctionnement | 0°C to +95°C (Tc) |
| Boîtier | 96-TWBGA (9x13 mm) |
| Type de montage | Surface Mount |
| Number of Banks | 8 |
| Interface | Parallel |
| Statut RoHS | Compliant |
| Statut du cycle de vie | Active |
Configuration des broches de IS46TR16256A-125KBLA2
| Broche A1 | VDD — Power supply (1.5V) |
| Broche A2 | DQ0 — Data I/O 0 |
| Broche A3 | DQ1 — Data I/O 1 |
| Broche B1 | VSS — Ground |
| Broche B2 | DQ2 — Data I/O 2 |
| Broche B3 | DQ3 — Data I/O 3 |
| Broche C1 | VDDQ — I/O power supply (1.5V) |
| Broche C2 | DQ4 — Data I/O 4 |
| Broche C3 | DQ5 — Data I/O 5 |
| Broche D1 | VSSQ — I/O ground |
| Broche D2 | DQ6 — Data I/O 6 |
| Broche D3 | DQ7 — Data I/O 7 |
| Broche E1 | VREF — Reference voltage for address/command |
| Broche E2 | A0 — Address input 0 |
| Broche E3 | A1 — Address input 1 |
| Broche F1 | A2 — Address input 2 |
| Broche F2 | A3 — Address input 3 |
| Broche F3 | A4 — Address input 4 |
| Broche G1 | A5 — Address input 5 |
| Broche G2 | A6 — Address input 6 |
| Broche G3 | A7 — Address input 7 |
| Broche H1 | A8 — Address input 8 |
| Broche H2 | A9 — Address input 9 |
| Broche H3 | A10/AP — Address input 10 / Auto-precharge |
| Broche J1 | A11 — Address input 11 |
| Broche J2 | A12 — Address input 12 |
| Broche J3 | A13 — Address input 13 |
| Broche K1 | A14 — Address input 14 |
| Broche K2 | A15 — Address input 15 |
| Broche K3 | BA0 — Bank address 0 |
| Broche L1 | BA1 — Bank address 1 |
| Broche L2 | BA2 — Bank address 2 |
| Broche L3 | RAS# — Row address strobe |
| Broche M1 | CAS# — Column address strobe |
| Broche M2 | WE# — Write enable |
| Broche M3 | CS# — Chip select |
| Broche N1 | CKE — Clock enable |
| Broche N2 | ODT — On-die termination |
| Broche N3 | CK — Clock (positive) |
| Broche P1 | CK# — Clock (negative) |
| Broche P2 | RESET# — Reset |
| Broche P3 | VDD — Power supply (1.5V) |
Applications typiques
IS46TR16256A-125KBLA2 convient pour 6 applications: Embedded Computing, Networking Equipment, Industrial PCs, Telecommunications Infrastructure, Video Processing, Data Acquisition Systems.
Embedded Computing
The IS46TR16256A-125KBLA2 provides high-density 4Gb DDR3 memory for embedded processors, offering 1600 MT/s data rate and 12.8 GB/s bandwidth. Its 256Mx16 organization simplifies bus design, reducing component count. The 96-TWBGA package enables compact layouts in space-constrained systems. With 1.5V operation and low-power modes, it suits power-sensitive embedded applications. The 0°C to +95°C range covers typical industrial environments.
Recommandé
Networking Equipment
In routers and switches, the IS46TR16256A-125KBLA2 provides fast packet buffering and routing tables. Its 1600 MT/s speed and 20ns tRCD ensure low latency for high-throughput data processing. The 8-bank architecture allows concurrent access, improving efficiency. The 1.5V supply reduces power consumption in always-on network devices. The 96-TWBGA package fits dense line cards, and the RoHS compliance meets environmental standards.
Recommandé
Industrial PCs
The IS46TR16256A-125KBLA2 is ideal for industrial PCs requiring reliable, high-capacity memory. Its 4Gb density supports demanding applications like machine vision and data acquisition. The 0°C to +95°C temperature range ensures operation in harsh factory environments. The 1.5V operation and self-refresh mode help manage power in continuous operation. The 96-TWBGA package provides robust solder joints for vibration resistance.
Recommandé
Telecommunications Infrastructure
In base stations and telecom equipment, the IS46TR16256A-125KBLA2 provides high-bandwidth memory for signal processing and protocol handling. Its 1600 MT/s data rate and 12.8 GB/s bandwidth support high-speed data streams. The 8-bank design enables efficient multi-tasking. The 1.5V supply is compatible with standard telecom power rails. The 96-TWBGA package allows high-density memory arrays on line cards.
Recommandé
Video Processing
The IS46TR16256A-125KBLA2 is well-suited for video processing systems requiring large frame buffers. Its 4Gb capacity can store multiple HD frames, and the 1600 MT/s speed ensures real-time processing. The 256Mx16 organization provides a wide data path for high-resolution video. The 1.5V operation reduces heat in continuous operation. The 96-TWBGA package is ideal for compact video capture cards.
Recommandé
Data Acquisition Systems
In data acquisition systems, the IS46TR16256A-125KBLA2 provides high-speed, high-capacity buffering for analog-to-digital converters. Its 1600 MT/s data rate matches high-speed ADC outputs, and the 4Gb capacity stores large datasets. The 20ns tRCD ensures low latency for real-time data logging. The 1.5V supply is compatible with common ADC power domains. The 96-TWBGA package allows integration on compact DAQ boards.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour IS46TR16256A-125KBLA2 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | IS46TR16256B-125KBLA2 | IS43TR16256AL-125KBL | MT41K256M16HA-125 | K4B4G1646D-BYK0 |
|---|---|---|---|---|---|
| Package | 96-TWBGA (9x13) | 96-TWBGA (9x13) | 96-TWBGA (9x13) | E: 96-TWBGA (9x13) | 96-TWBGA (9x13) |
| Brand | ISSI | ISSI | ISSI | E: Micron | Samsung |
| Memory Size | 4 Gbit | 4 Gbit | 4 Gbit | E: 4 Gbit | 4 Gbit |
| Data Rate | 1600 MT/s | 1600 MT/s | 1600 MT/s | E: 1600 MT/s | 1600 MT/s |
| Supply Voltage | 1.5V | 1.5V | 1.5V | E: 1.5V | 1.5V |
| tRCD | 20 ns | 20 ns | 20 ns | E: 20 ns | 20 ns |
| Operating Temperature | 0°C to +95°C | 0°C to +95°C | -40°C to +95°C | E: 0°C to +95°C | 0°C to +95°C |
| Automotive Grade | No | No | Yes | E: No | No |
Principaux différenciateurs
- Automotive grade option available (vs IS46TR16256B-125KBLA2)
- Cross-brand availability (vs MT41K256M16HA-125:E)
- Low-voltage support (vs K4B4G1646D-BYK0)
Notes de conception
For high-speed DDR3 signals, maintain controlled impedance of 50 ohms for single-ended and 100 ohms differential for clock lines. Keep trace lengths matched within 50 mils for data and address buses. Use ground planes beneath the memory to reduce noise and ensure signal integrity.
Decouple VDD and VDDQ with 0.1uF and 1uF ceramic capacitors placed close to the power pins. Use a dedicated 1.5V supply with low ripple. The VREF pin should be bypassed with a 0.1uF capacitor to ground to maintain stable reference voltage.
The IS46TR16256A-125KBLA2 dissipates up to 0.435W at 290mA and 1.5V. Ensure adequate airflow or a thermal pad on the PCB to keep the case temperature below 95°C. In high-density designs, consider spacing between memory devices to avoid heat buildup.
Informations de conformité
RoHS compliance confirmed from ISSI datasheet. Other compliance data not specified in provided sources.
