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MRF6V14300HR5 - 330W, 1.4GHz RF Power LDMOS MOSFET | NXP
The NXP MRF6V14300HR5 is a N-Channel enhancement-mode lateral RF power MOSFET rated for 50 V drain operation and 330 W pulsed output power at 1.4 GHz, supplied in a NI-780H-2L ceramic-flange push-pull package. It targets the L-band (1200-1400 MHz) pulsed avionic, radar, and industrial-sensing transmitter market where high peak power, high gain (18 dB) and ruggedness are required. A lateral N-channel RF MOSFET (LDMOS-family device) is a planar power transistor whose drain current flows through a laterally arranged channel under the gate. Compared with vertical bipolar RF transistors, LDMOS parts combine simpler gate drive (no negative bias needed for class-AB biasing), higher gain, and inherent broadband stability, making them the default choice for solid-state RF power stages from HF through S-band. The MRF6V14300HR5 is characterized for pulsed operation at 1 to 12 percent duty cycle. The 50 V drain rating delivers 330 W of peak output power while the 18 dB typical gain reduces driver-stage complexity in IFF, DME, TACAN, and secondary-surveillance radar links. The lateral N-channel design yields a 150 mA typical quiescent drain bias range and the push-pull NI-780H-2L ceramic package provides a low-thermal-resistance path to the system heatsink. Engineers typically deploy this part in the final or penultimate stage of an L-band pulsed amplifier chain, preceded by a smaller driver such as the MRF6V10010NR4. A 50 V switched-mode supply, a bias-T network with 5 V gate bias, and a 1:1 or 1:2 microstrip transformer to 50 ohm complete the surrounding circuit. Good RF grounding, ample decoupling, and matched input/output networks are essential for stable 18 dB gain. Application priorities include IFF transponders, DME interrogators, TACAN ground stations, weather radar front-ends, and other 1.2-1.4 GHz pulsed RF links. Compared with bipolar alternatives the LDMOS gain advantage reduces driver-stage count; compared with GaN-on-SiC parts the cost-per-watt is markedly lower at the 300 W power level, although GaN still wins on efficiency at narrower bandwidths. Choose the MRF6V14300HR5 over the MRF6V14300HR3 only when you need the higher gain tape-and-reel HR5 sub-line for surface-mount-friendly handling, and over the MRF6V14300HSR5 only if your chassis cannot dissipate the slightly higher thermal load of the straight-lead package. For new designs above 1.4 GHz or where efficiency must exceed 55 percent, consider NXP's MRF6V2150 GaN-on-SiC family instead. This page synthesizes distributor stock, parametric comparisons, and practical L-band PA design notes not collated in the manufacturer datasheet alone.
MRF6V14300HS - 330W 1.4GHz RF Power MOSFET NI-780S | NXP
The NXP Semiconductors (formerly Freescale) MRF6V14300HS is a pulsed lateral N-Channel enhancement-mode RF power MOSFET designed for high-power operation in the 1200 MHz to 1400 MHz band, rated at 330 W output power with a 50 V supply and housed in the NI-780S ceramic package. Key headline parameters are 1400 MHz operating frequency, 330 W pulsed output power, and 50 V drain bias, packaged in the NI-780S ceramic flange-mount case. The device delivers 18 dB typical power gain and is specified for pulsed service from 1% to 12% duty cycle, making it suitable for L-band radar and avionics transmitters. An RF power MOSFET is a lateral metal-oxide-semiconductor field-effect transistor optimized for radio-frequency power amplification rather than low-frequency switching. Within the taxonomy it belongs to: RF power transistor -> discrete RF semiconductor -> power management discrete -> semiconductor device. Lateral construction gives lower feedback capacitance and higher breakdown ruggedness than vertical DMOS parts, enabling safe operation into high VSWR loads typical of pulsed radar service. Key features of the MRF6V14300HS include 18 dB minimum power gain at 1400 MHz, 50 V typical drain bias, integrated gate-source ESD protection, gold metallization for hermetic reliability, and a beO-free package construction. The part is internally matched for broadband performance in the 1200 to 1400 MHz L-band segment and includes built-in protection against high VSWR conditions. Architecturally, the MRF6V14300HS uses NXP's HV6 lateral MOSFET process, a high-voltage enhancement-mode LDMOS-derivative technology tuned for RF power. The ceramic NI-780S flange package provides low thermal resistance and beO-free construction, supporting long-term reliability in pulsed avionic and military environments where beO is restricted for health and safety reasons. Typical applications include L-band avionics transponders, DME (Distance Measuring Equipment), TACAN, primary surveillance radar, IFF (Identification Friend or Foe) transmitters, and pulsed RF power amplifiers for the 1030/1090 MHz secondary surveillance band when paired with appropriate matching networks. The beO-free package is particularly valued in aerospace and defense programs. When designing with this part, ensure adequate DC blocking and RF bypassing on the gate and drain bias lines. The duty cycle must remain within the 1% to 12% specification envelope to avoid exceeding the pulsed thermal safe operating area. Source grounding via the package flange is critical for low common-lead inductance.
MRF6V14300HSR5 - 330W LDMOS RF Power MOSFET, 1.4GHz, 50V | NXP
The NXP MRF6V14300HSR5 is a 330 W pulse-rated lateral N-channel RF power MOSFET (LDMOS) designed for operation from 1200 MHz to 1400 MHz in a 50 V supply rail, housed in the NI-780S ceramic package. It delivers 18 dB typical gain at 1400 MHz with 50 V drain bias and 150 mA quiescent current, making it a drop-in reference design transistor for pulsed L-band radar systems. A power RF MOSFET is a specialized lateral double-diffused metal-oxide-semiconductor transistor built on a silicon substrate and engineered for high-frequency, high-power signal amplification. Within the broader taxonomy it sits under RF power transistor -> RF MOSFET -> discrete RF semiconductor -> power management device. LDMOS technology dominates sub-GHz to roughly 3 GHz pulsed applications because of its high breakdown voltage, simple gate biasing and excellent ruggedness into severe output mismatch, and the MRF6V14300HSR5 belongs to NXP's VHV6 (Very High Voltage, 6th generation) family optimized for pulsed avionics and radar duty. Key features include a 50 V drain-source operating voltage with a 100 V breakdown rating, 330 W peak output power at 1.4 GHz, 18 dB typical power gain, pulsed duty cycle support from 1% to 12%, and integrated ESD protection. The NI-780S package provides low thermal resistance and is compatible with NXP's broader 50 V LDMOS pulsed lineup, simplifying PCB reuse. The device is specified for 1.4 GHz pulsed operation, aligning it with long-range primary surveillance, air-traffic-control and weather-radar transmitter chains. The architecture is a laterally diffused N-channel MOSFET on a high-resistivity silicon substrate, with an integrated gate-source ESD diode. Source vias are connected through the package backside for low-inductance grounding, while the gate is DC-biased through a bias-tee network. The 50 V rail provides headroom for high-power pulses while keeping average dissipation manageable for pulsed service. Typical applications include L-band pulsed radar transmitters (1200-1400 MHz), secondary surveillance radar transponders, air-traffic-control and weather-radar final stages, avionics DME/TACAN power amplifiers, and pulsed RF signal generators. Its 18 dB gain at 1.4 GHz makes it well suited as a final or driver stage where high gain reduces chain complexity. A key design consideration is thermal management at peak power. At 330 W peak with a typical 10% duty cycle the average dissipation is much lower than continuous rating, but the design must still provide adequate heatsinking, good PCB thermal vias, and bias sequencing to avoid in-rush current. Use a 50 V nominal supply and ensure gate bias is applied before drain voltage to prevent uncontrolled current spikes. This page synthesizes NXP datasheet parameters, distributor stock, application-stage pairing recommendations, and design notes not found in the original datasheet, giving the design engineer a practical reference alongside the manufacturer's specifications.
MRF6V2150NBR5 - 150W 50V RF MOSFET TO-272 | NXP
The NXP MRF6V2150NBR5 is a 150 W, 50 V N-Channel Enhancement-Mode Lateral RF power MOSFET designed for continuous-wave (CW) large-signal output and driver stages with operating frequencies up to 450 MHz, packaged in the TO-272 WB-4 ceramic/bolt-down format with a 5-pin TO-272W tape-and-reel configuration. The device provides 25 dB power gain, 150 W typical CW output power, and operates from a 50 V drain supply, with a 110 V drain-to-source breakdown voltage headroom that supports inductive load mismatches typical in HF/VHF power amplifier output networks. An RF power MOSFET (radio-frequency power metal-oxide-semiconductor field-effect transistor) is a discrete semiconductor device built specifically to amplify high-frequency alternating signals at significant power levels. Within the broader taxonomy, RF power MOSFETs sit under power transistors, then power semiconductors, then discrete semiconductors. They use a lateral die layout (current flows horizontally through the silicon) rather than the vertical structure of low-frequency power MOSFETs - this trade-off reduces die capacitance and enables multi-hundred-MHz operation at the cost of higher on-resistance per unit area. Lateral MOSFETs also exhibit a negative temperature coefficient of drain current, which provides automatic current sharing when multiple devices are paralleled for higher output power. The MRF6V2150NBR5 features a 110 V VDS rating, an unmatched input/output impedance (allowing the designer full flexibility in the matching network), and an operating frequency envelope of 10-450 MHz that covers the industrial-scientific-medical (ISM) bands, FM broadcast, VHF land-mobile radio, and amateur radio segments from 6 m through 80 m. The device is characterized for CW service, which means its thermal and electrical ratings assume steady-state operation rather than pulsed radar-like duty cycles. Typical applications include CW drivers for 87.5-108 MHz FM broadcast transmitters, VHF land-mobile base-station power amplifiers in the 136-174 MHz band, 27 MHz CB/industrial radio final stages, and broadband laboratory amplifiers driving inductive or resistive test loads. Designers pair this part with lumped-element or microstrip matching networks and a heavy copper or forced-air heatsink because the TO-272WB-4 ceramic package is designed to be bolted directly to a chassis heatsink for low thermal resistance. When designing with this MOSFET, the most critical parameter is dissipated heat at the case. Estimated: at POUT = 150 W CW with 25 dB gain and 60% drain efficiency, the device dissipates roughly 100 W as heat, requiring a substantial heatsink with case temperature held below the 200 C maximum rating. Always mount with proper torque and thermal compound per the datasheet mechanical drawing. This page synthesizes distributor availability, drop-in alternatives from the same NXP MRF6V family, and practical CW amplifier design notes that go beyond the manufacturer datasheet's typical characteristics table.
MRF6V2300NR1 - 300W, 50V RF Power MOSFET 10-600 MHz | NXP
The NXP MRF6V2300NR1 is a 300 W, 50 V lateral N-channel enhancement-mode RF power MOSFET designed for continuous-wave large-signal output and driver stages operating from 10 MHz to 600 MHz, housed in a TO-270 WB-4 ceramic flanged package. It targets industrial, medical, and scientific ISM/VHF/UHF applications where broadband unmatched operation is required. An RF power MOSFET (RF power field-effect transistor) is a discrete semiconductor device engineered to amplify radio-frequency signals at high efficiency and power levels. It belongs to the broader hierarchy: RF power transistor -> power MOSFET -> MOSFET -> FET -> discrete semiconductor. Compared with bipolar RF power transistors, lateral MOSFETs offer higher gain, simpler biasing, and superior thermal stability. The MRF6V2300NR1 belongs specifically to NXP's MRF6V family of 50 V broadband RF LDMOS parts. Key features include 300 W CW output power at 220 MHz with 25.5 dB power gain into a 50 V supply, broadband 10 MHz to 600 MHz matched operation, and a 110 V drain-source breakdown rating for transient headroom. The TO-270 WB-4 ceramic body provides low thermal resistance and high RF isolation, enabling small-footprint amplifier pallets and matched PCB modules. The device is built on a 50 V lateral MOSFET process with a high-resistivity silicon substrate, minimizing parasitic capacitance. At 220 MHz in Class AB, the device demonstrates 25.5 dB gain at 300 W CW into a 50 V rail. Unmatched input and output ports allow designers to optimize their own broadband matching networks for industrial heating, plasma generation, MRI exciter, particle accelerator, and broadcast FM/TV service classes. Typical applications include UHF/VHF CW industrial heating, RF plasma generators for semiconductor etch and medical ablation, FM/VHF broadcast amplifiers, MRI/NMR transmit amplifiers, and particle accelerator driver stages. The unmatched broadband performance simplifies wideband amplifier design across 10-600 MHz with a single part. When designing with this device, ensure the drain bias network uses adequate RF choking and the load VSWR stays within the safe operating area (SOA). The unmatched input/output ports require designer-optimized matching networks; proper thermal management via the TO-270 flange is mandatory at full 300 W CW power. This page synthesizes manufacturer datasheet values, distributor pricing, parametric comparisons with NXP same-family drop-ins, and practical thermal/SOA design notes not available on a single competitor product page.
MRF6V2300NR5 - 300W RF Power MOSFET, 10-600 MHz, 50V | NXP
The NXP MRF6V2300NR5 is a 300 W lateral N-channel single-ended broadband RF power MOSFET designed for CW large-signal output and driver stages in the 10 MHz to 600 MHz band. Housed in the TO-270 WB-4 ceramic-air-cavity package, it delivers 25.5 dB typical gain at 220 MHz when operated at 50 V and supports industrial, medical, and scientific RF power applications. What is an RF Power MOSFET? An RF power MOSFET is a specialized lateral double-diffused MOS transistor engineered to deliver high RF output power with high gain and efficiency at high frequencies. RF power MOSFETs (a sub-family of power MOSFETs -> power transistors -> discrete semiconductors) use a lateral structure rather than the vertical structure of low-frequency power MOSFETs, reducing parasitic capacitance and enabling VHF/UHF operation. The MRF6V2300NR5 belongs to NXP's MRF6V family of 50 V broadband LDMOS RF power devices. Key features of the MRF6V2300NR5 include 300 W CW output power, a 50 V drain supply rating, broadband operation from 10 MHz to 600 MHz, and 25.5 dB typical gain at 220 MHz. The part is housed in the TO-270 WB-4 ceramic package with bolt-down flanges for direct heatsink mounting, providing low thermal resistance for CW dissipation. It is an unmatched device, leaving input and output matching to the system designer for tuning across sub-bands. Technically, the device uses NXP's high-voltage LDMOS process with a lateral N-channel enhancement-mode structure. The TO-270 ceramic-air-cavity package provides hermetic sealing and low parasitic inductance, supporting broadband performance. Operating at 50 V VDD rather than 28 V allows higher RF output power with the same device periphery, but requires careful bias sequencing and tuned output combiners. Typical applications include VHF/UHF broadcast transmitters, industrial RF heating and plasma generators, MRI RF power amplifiers, scientific particle accelerators, and radar driver stages. The wide frequency range makes one SKU reusable across multiple sub-bands simply by retuning the matching networks. A primary design consideration is thermal management: at 300 W RF output with ~55% efficiency, the device dissipates roughly 245 W as heat. Mounting on a heatsink with low thermal resistance (and proper forced-air cooling for CW service) is essential. Unmatched input/output networks must be designed carefully, as the part is not internally matched. This page synthesizes distributor pricing, same-family NXP alternates, and practical RF design notes that complement but do not duplicate the manufacturer datasheet.
MRF6V3090NBR1 - 90W RF Power LDMOS, 470-860 MHz | NXP
The NXP (formerly Freescale) MRF6V3090NBR1 is an N-channel enhancement-mode lateral MOSFET (LDMOS) RF power transistor designed for 90 W CW output power at 860 MHz from a 50 V supply, housed in a TO-272 WB-4 ceramic package. It is engineered for broadcast and commercial aerospace broadband applications covering 470 to 1215 MHz, and is characterized to handle 10:1 VSWR at all phase angles when delivering 90 W CW into a 50 V DC rail. An RF power LDMOS is a laterally-diffused metal-oxide-semiconductor field-effect transistor optimized for high-frequency, high-power amplification in the UHF band. LDMOS technology sits within the broader power MOSFET family alongside VDMOS and GaN HEMT, and is widely used as the final stage in broadcast transmitters, industrial heating sources, and aerospace RF links because it offers high gain, good efficiency, and proven long-term reliability in Class AB operation. The MRF6V3090NBR1 specifically targets the 470-860 MHz portion of UHF (with extended characterization to 1215 MHz for avionics links) where solid-state replacement of older tube amplifiers is standard practice. Key features include 90 W CW typical output power at 860 MHz, a power gain of 22 dB at 860 MHz / 90 W, 50 V DC drain supply, integrated ESD protection, and characterized input/output series-equivalent large-signal impedance for class-AB broadband matching. The lateral MOSFET die is bonded into a high-thermal-conductivity ceramic carrier that provides low thermal resistance to the system heatsink, supporting continuous-wave operation in commercial broadcast service. Architecturally, the device uses an enhancement-mode N-channel lateral MOSFET die where the source is tied to the package flange through the mounting surface. This construction provides the ruggedness needed for broadcast service where high VSWR is common during antenna icing or tuning transients, and the wider gate breakdown margin typical of LDMOS technology improves reliability relative to bipolar RF transistors of the same power class. Typical applications include UHF broadcast transmitters in the 470-860 MHz TV band, commercial aerospace communications links operating near 1 GHz, industrial RF heating at UHF, and avionics transponders up to 1215 MHz. In broadcast service the part is usually driven by lower-power MRF8x LDMOS stages that together form a multi-hundred-watt amplifier chain. When designing with this device, ensure the heatsink surface has a flatness of better than 0.001 inch and a thermal compound bond, because the ceramic package relies on direct chassis mounting to achieve its rated junction-to-case thermal resistance. Always design the output matching network against the published series-equivalent large-signal impedance data rather than small-signal S-parameters for the most accurate CW performance prediction. This page synthesizes NXP datasheet specifications, current distributor availability, drop-in alternatives within the same TO-272 WB-4 footprint, and broadcast-band design notes in a single reference, sourced from the manufacturer datasheet (MRF6V3090N) and live distributor listings.
MRF6V3090NR1 - 90W RF Power LDMOS 470-1215 MHz | NXP
The NXP MRF6V3090NR1 is a 90 W CW RF power N-channel enhancement-mode lateral MOSFET designed for broadband commercial and industrial broadcast applications across 470 to 1215 MHz, housed in the TO-270 WB-4 (TO-272-4 family) ceramic-air-cavity package. Per the NXP datasheet MRF6V3090N, the device is characterized for 50 V operation, delivers 22 dB typical gain at 860 MHz, and is rated for 90 W continuous-wave output power with 10:1 VSWR survivability across all phase angles. The MRF6V3090NR1 shares the same silicon and reference circuit family as MRF6V3090NR5 (tape-and-reel variant) and MRF6V3090NBR1 (narrower band tuning). An RF power LDMOS (Laterally Diffused Metal-Oxide Semiconductor) transistor is a specialized high-power MOSFET optimized for RF amplification in the UHF band. Within the hierarchy LDMOS -> RF power MOSFET -> RF power transistor -> discrete semiconductor, LDMOS devices dominate broadcast, radar, and industrial-scientific-medical (ISM) RF power stages because they offer high gain, good efficiency, and ruggedness compared to older bipolar RF transistors. The MRF6V3090NR1's enhancement-mode gate structure simplifies biasing (no negative gate voltage needed to prevent conduction) while the lateral drain arrangement minimizes parasitic capacitance, enabling broadband operation. Key features include 50 V drain-source breakdown, 90 W CW output at 860 MHz, 22 dB small-signal gain, integrated ESD protection, and gold metallization for high-temperature reliability. The ceramic TO-270 WB-4 air-cavity package provides very low lead inductance and excellent thermal transfer for high-duty-cycle broadcast service. Architecturally, the MRF6V3090NR1 uses NXP's latest-generation LDMOS process, which places the drain contact laterally along the source to reduce hot-carrier injection and increase ruggedness under VSWR mismatch. The NXP datasheet MRF6V3090N provides series-equivalent large-signal impedance parameters for 470, 860, and 1215 MHz operation, enabling engineers to design the matching network around the device rather than reverse-engineering it on the bench. Typical applications include UHF TV transmitter drivers, DVB-T/DVB-T2 broadband linear amplifiers, public-safety mobile-radio base stations, and ISM-band industrial heating. Its 10:1 VSWR tolerance makes it particularly suited to field installations where antenna mismatches are common. When designing with this device, follow the reference circuit in the datasheet for impedance matching and bias sequencing. The TO-270 WB-4 package requires a bolted heatsink with proper torque, and the gate voltage must be sequenced before the drain voltage for safe hot-switching protection. This page synthesizes distributor pricing, drop-in NXP-family alternatives, and broadcast RF design guidance not consolidated in the manufacturer datasheet.
MRF6V4300NBR5 - 300W CW RF Power MOSFET, 50V, 600MHz | NXP
The NXP MRF6V4300NBR5 is a 300 W CW (continuous-wave) RF power N-channel enhancement-mode lateral MOSFET designed for high-frequency large-signal output and driver stages up to 600 MHz. It is supplied in the NI-1230 / TO-272 WB-4 ceramic-and-plastic overmolded package with bolt-down flange, and is characterized by 22 dB typical power gain at 450 MHz, 110 V drain-source breakdown voltage, and a 50 V typical operating drain voltage for VHF/UHF broadband amplifier service. A radio-frequency power MOSFET is a discrete transistor optimized to deliver large amounts of RF output power into a 50-ohm load while withstanding the high peak voltages and currents found in CW and pulsed amplifier chains. Compared to bipolar RF power transistors, lateral MOSFETs offer higher input impedance, simplified biasing, and better thermal stability. The MRF6V4300N family sits at the high-power end of NXP's VHV6 (Very High Voltage 6th generation) lateral MOSFET portfolio, slotting between the lower-power MRF6V3090N series and higher-frequency N-channel devices targeted at 1 GHz and above. Key features include broadband performance from 10 MHz to 600 MHz, 22 dB power gain, integrated ESD protection, internally matched input on related part numbers, and the ability to survive 10:1 VSWR at all phase angles when operated at 50 V Vdd. Devices are characterized with series-equivalent large-signal impedance parameters to simplify class AB/AB-F amplifier matching-network synthesis using standard simulation tools. Typical applications include UHF television transmitters, industrial RF heating, scientific particle accelerators, CO2 laser drivers, and broadband CW driver amplifiers feeding higher-power tubes or solid-state pallets. The unmatched input and output give RF designers full freedom to design matching networks optimized for their specific frequency band and harmonic profile, trading pin count simplicity for RF flexibility. Design considerations for this device include mandatory output-load mismatch protection, robust heat-sinking through the bolt-down ceramic flange, and bias sequencing to prevent thermal runaway. Designers should verify with NXP's AN1977 application note and reference designs before committing the part to production layouts.
MRF6VP11KHR5 - 1000W 50V RF Power MOSFET | NXP Semiconductors
The NXP Semiconductors MRF6VP11KHR5 is an N-channel enhancement-mode lateral MOSFET designed as an RF power field-effect transistor for very-high-voltage pulsed wideband applications up to 150 MHz, delivering 1000 W of RF output power from a 50 V supply. Housed in the NI-1230 ceramic package, the device is factory-unmatched and is intended for use as the final or driver stage in industrial, medical, and scientific pulsed RF systems where high peak power and ruggedness under mismatch are required. RF power MOSFETs are specialized lateral MOSFETs optimized for high-frequency, high-power switching rather than low-voltage digital logic. The MRF6VP11KHR5 belongs to the NXP VHV6 (very-high-voltage, 6th generation) RF power family, characterized by a 50 V typical operating drain voltage and an 110 V drain-source breakdown that provides the headroom needed for pulse overshoot and load-mismatch transients common in plasma, CO2 laser, and particle-accelerator RF generators. Within the broader hierarchy, the part is a discrete power semiconductor used in power management and RF energy subsystems. Key electrical features include 26 dB typical power gain at 130 MHz, a pulsed output capability to 1000 W peak, 1.8 MHz to 150 MHz operating frequency range, and 50 V drain-source breakdown class. The rugged NI-1230 ceramic-air-cavity package provides low parasitic inductance and exposed ceramic top for through-package cooling, while internal matching networks are intentionally omitted so designers can apply external matching networks tailored to their specific band and load conditions. Typical applications include pulsed CO2 laser tube exciters, plasma-generation RF sources, particle accelerator RF amplifiers, MRI spectroscopy gradient drivers, and industrial heating/drying RF generators. Each of these applications requires multi-hundred-watt peak RF bursts at HF/VHF frequencies with high tolerance to load-VSWR faults, which the part's high breakdown voltage and lateral MOSFET structure support. When designing with this device, ensure the heatsink/thermal spreader contacts the package ceramic top and base and that the drain voltage stays below the rated breakdown under all mismatch conditions. Always operate the device in pulsed (not CW) mode for rated power, and use an external circulator or isolator where load mismatch cannot be otherwise controlled. This page consolidates distributor pricing, drop-in NXP alternatives, package information, and practical design notes beyond the manufacturer datasheet.
MRF6VP121KHR5-FR - 1000W LDMOS RF MOSFET, 965-1215 MHz | NXP
The NXP/Freescale MRF6VP121KHR5-FR is a 1000 W lateral N-channel enhancement-mode LDMOS RF power transistor designed for pulsed applications in the 965-1215 MHz L-band spectrum. Housed in the NI-1230 ceramic package, it provides 21.4 dB gain at 1.215 GHz and operates from a 50 V supply rail, delivering up to 150 mA of quiescent drain current with class-AB or class-C biasing. The "-FR" suffix denotes factory-on-tape-and-reel orientation suitable for high-volume production lines, while the underlying die is identical to the standard MRF6VP121KHR5 variant. An RF power MOSFET is a specialized discrete transistor built on a laterally-diffused metal-oxide-semiconductor process that combines the high breakdown voltage of LDMOS with the high input impedance and ease of biasing characteristic of MOSFETs. Within the RF transistor taxonomy, it sits at the intersection of discrete semiconductors and RF power devices, serving as the final amplification stage in solid-state transmitters where it must deliver hundreds to thousands of watts at radio frequencies while tolerating the large standing-wave-ratio (VSWR) mismatch conditions found in industrial RF heating, particle accelerators, and L-band radar. Compared with bipolar RF power transistors, LDMOS offers higher gain per stage, simpler gate biasing (no negative supply needed for cutoff), and inherent ruggedness under output mismatch. Key feature highlights include 1000 W peak output power at 1.215 GHz, 21.4 dB typical power gain under pulsed conditions, 50 V drain supply, integrated ESD protection, and built-in input-matching networks that simplify external PCB design. The 50 V supply rail enables fewer series combining stages than a 28 V or 32 V LDMOS device, directly reducing combiner losses in high-power systems. The thermal resistance of the NI-1230 ceramic package supports pulsed-operation duty cycles at full rated power with appropriate heatsinking. The transistor's laterally-diffused architecture implements an N-channel enhancement-mode structure that requires only a single-polarity gate bias supply, simplifying system-level design relative to depletion-mode parts. Its intrinsic input impedance supports broadband matching, and the device integrates a number of internal protections (ruggedness against infinite VSWR) that allow safe operation into mismatched loads - a critical requirement for industrial and aerospace applications where antenna behavior is unpredictable. Typical applications for the MRF6VP121KHR5-FR include L-band pulsed radar transmitters operating in the 1030 MHz (secondary surveillance radar/SSR) and 1090 MHz (ADS-B/Mode S) bands, particle accelerator solid-state power amplifiers used in physics and medical isotope production, and industrial RF heating / plasma-generation systems. Its 1000 W pulsed rating also suits long-range air-traffic-control interrogation channels and weather-radar front ends. For thermal design, the application note recommends mounting the device on a copper spreader with thermal compound and ensuring the case temperature stays below the 200 C absolute maximum; for pulsed operation at typical 1-3% duty cycle, no additional heatsink beyond standard RF pallet cooling is normally required. Designers should keep gate and drain leads short and use low-loss PCB substrates such as Rogers RO4350B for the matching-network traces to preserve the 21 dB gain advantage at 1.215 GHz. This page synthesizes distributor stock data and design guidance not found in the manufacturer datasheet alone, including parameter proximity analysis for cross-brand L-band alternatives and practical heatsinking tips for pulsed-operation duty cycles.
MRF6VP121KHR5178 - 1000W LDMOS RF Power MOSFET, NI-1230 | NXP
The NXP MRF6VP121KHR5178 is a 1000 W lateral N-channel LDMOS RF power transistor designed for broadband pulsed RF amplification up to 1.03 GHz and housed in the NI-1230 ceramic flanged package. It delivers 20 dB typical gain at 1.03 GHz from a 50 V supply and is engineered for high-power pulsed applications such as L-band radar, avionics transmitters, and solid-state pulsed RF generators. An LDMOS (Laterally Diffused Metal-Oxide Semiconductor) RF power transistor is a specialized MOSFET variant that places the drain current laterally under the gate, enabling higher breakdown voltage, higher gain, and excellent thermal stability compared to vertical MOSFETs or bipolar RF transistors. Within the semiconductor hierarchy, LDMOS sits under power MOSFET -> MOSFET -> discrete transistor, and is the dominant technology for high-power RF amplification in commercial and defense pulsed systems above 1 GHz. Key specifications include a 50 V drain-source breakdown rating, 150 mA quiescent drain current, 1.27 pF input capacitance (typical), 86.7 pF output capacitance, and 539 pF reverse transfer capacitance. The device exhibits a common-source N-channel configuration, optimized broadband matching network, and operates across -65C to +200C junction temperature, allowing deployment in harsh-environment military and industrial systems. The MRF6VP121KHR5178 architecture uses NXP's advanced LDMOS process for high ruggedness under VSWR mismatch and high duty-cycle pulsed conditions. Its broadband input/output matching network is internal, simplifying PCB-level integration while maintaining the high efficiency required for pulsed avionics and radar applications. The '178' suffix denotes a specific test/reel variant of the MRF6VP121KHR5 base part. Typical applications include L-band pulsed avionics transmitters, ground-based surveillance radar, industrial RF drying and plasma generators, and broadband scientific RF amplifiers. The NI-1230 ceramic package provides a low-inductance flange mount that bolts directly to a heatsink or cold plate for maximum heat extraction. When designing with this part, ensure the heatsink thermal design keeps the junction below 200C, use proper RF bypass on the drain supply, and provide sufficient gate-bias sequencing to prevent transient SOA violations at turn-on. This page consolidates distributor pricing, verified parametric data, and same-family drop-in alternatives to help RF power designers source, evaluate, and integrate the MRF6VP121KHR5178 faster than scanning multiple distributor pages.
MRF6VP21KHR5 - 1000W VHV6 RF MOSFET, 235MHz, NI-1230 | NXP
The NXP Semiconductors MRF6VP21KHR5 is a very-high-voltage (VHV6) N-channel enhancement-mode RF power transistor housed in a 5-pin NI-1230 ceramic flanged package. Designed primarily for pulsed wideband applications, it is rated for operation up to 235 MHz and delivers 1000 W of output power in a 50 V supply rail with 24 dB nominal power gain. The device is built on NXP's laterally diffused metal-oxide-semiconductor (LDMOS) process, which is the industry reference for high-power RF amplification in industrial, scientific, and medical (ISM) applications. An RF power MOSFET is a specialized metal-oxide-semiconductor field-effect transistor optimized to deliver large amounts of radio-frequency power with high gain and efficiency. Within the broader taxonomy, this device sits at: RF MOSFET -> RF power transistor -> discrete semiconductor -> power management component. LDMOS technology, in particular, dominates base-station and pulsed-power amplifier designs above 100 MHz because it offers a superior gain-bandwidth product and high breakdown voltage when compared to earlier bipolar RF transistors. Key features of the MRF6VP21KHR5 include a drain-source breakdown of 110 V, typical pulsed output power of 1000 W at 235 MHz, 24 dB nominal gain in a 50 V common-source test circuit, and an unmatched input/output that allows the designer to optimize matching networks for the specific frequency band. The NI-1230 ceramic package provides a low-thermal-resistance path to the heatsink, supporting the high peak power dissipation typical of pulsed RF service. The device is specified for operation up to a maximum junction temperature consistent with 225 °C packaging ratings, with peak reflow temperature (260 °C) tolerance to 40 s. Typical applications include pulsed wideband amplifiers in the 1–235 MHz range, particle accelerator drivers, MRI RF power stages, plasma-generation RF generators, and high-power industrial/scientific RF sources. Because the device is unmatched, the designer can tailor the input and output matching networks to the exact operating frequency and required bandwidth of the system. When designing with the MRF6VP21KHR5, ensure the heatsink and mounting torque follow NXP application notes for the NI-1230 flange - improper mounting is the leading cause of premature thermal failure. Operate strictly below the maximum drain voltage and within the safe operating area (SOA) to avoid secondary breakdown during pulse droop.
MRF6VP2600HR5-FR - 600W LDMOS RF MOSFET 2-500MHz | Freescale
The Freescale (NXP) MRF6VP2600HR5-FR is a 600 W lateral N-channel enhancement-mode LDMOS RF power MOSFET designed for broadband applications from 2 MHz to 500 MHz, housed in the NI-1230 ceramic flange package. It operates at a 50 V drain supply, delivers 25 dB typical power gain at 225 MHz, and is rated for 600 W CW output in broadcast and industrial RF amplifier service. The "-FR" suffix denotes a factory-reeled variant supplied on a tape-and-reel carrier. An RF power MOSFET is a discrete transistor optimized for high-frequency, high-power amplification in the megahertz to gigahertz range. LDMOS (Laterally Diffused Metal-Oxide Semiconductor) is the dominant technology for high-power RF amplification below ~3 GHz due to its high breakdown voltage, excellent thermal performance, and simplified broadband matching compared to bipolar devices. Within the power-management hierarchy, RF power MOSFETs sit between small-signal RF transistors and vacuum tubes, serving as the active output stage in solid-state transmitters. Key features of the MRF6VP2600HR5-FR include a 50 V drain-source breakdown rating that supports 48 V rail operation with margin, a 2.6 A continuous drain current capability, an unmatched input that enables flexible broadband matching networks, and a low thermal-resistance ceramic flange (NI-1230) for direct chassis mounting. The device is engineered to operate class AB or class C for maximum efficiency depending on linearity requirements. The MRF6VP2600HR5-FR uses a laterally diffused MOS structure that places the source, gate, and drain contacts on the top surface, allowing gold-metallized bond-wire or ribbon attachment from the die to the flange leads. Its ceramic NI-1230 package provides excellent heat transfer from the die to an external heatsink, while the flange isolation (or non-isolation, depending on the variant) simplifies mechanical mounting in transmitter modules. Typical applications include VHF/UHF broadcast transmitters, industrial scientific and medical (ISM) band amplifiers around 27 MHz and 81 MHz, FM broadcast linear amplifiers, two-way land-mobile radio base stations, and pulsed radar driver stages. Designers must pair it with a properly designed broadband matching network, low-loss combiner, and adequate heatsinking. When designing with this part, ensure the matching network provides the documented 50 ohm load-pull impedance while keeping the gate bias below the 20 V maximum rating. Use of a sequenced gate-bias supply (e.g., -5 V then +5 V) protects the oxide during thermal swings.
MRF6VP3091NBR1 - 90W 470-860MHz LDMOS RF Power Transistor | NXP
The NXP MRF6VP3091NBR1 is an N-channel enhancement-mode lateral MOSFET (LDMOS) RF power transistor designed for broadcast and commercial aerospace broadband applications from 470 MHz to 1215 MHz, delivering 18 W output at 860 MHz with 22 dB gain and a 50 V supply rail in a TO-272 WB-4 over-molded plastic package. The -B suffix denotes the tape-and-reel packaging variant optimized for high-volume SMT assembly. An RF power LDMOS transistor is a specialized power MOSFET built on a laterally-diffused metal-oxide-semiconductor process that integrates the high input impedance of a MOSFET with the rugged high-voltage, high-current capability needed for RF amplification. Within the broader taxonomy, the MRF6VP3091NBR1 sits in the LDMOS family, which belongs to RF power transistors, which in turn belong to discrete power semiconductors and ultimately to active electronic components. LDMOS devices dominate UHF/VHF broadcast transmitter final stages because they offer high gain, excellent thermal stability, and broadband capability compared to bipolar or GaN alternatives in their power class. Key features include 90 W peak envelope power capability, 22 dB typical power gain at 860 MHz, 50 V drain supply operation, integrated ESD protection, and gold metallization for long-term reliability. The device is optimized for DVB-T, ATSC, and analog broadcast transmitter final stages, with broadband matching supporting 470-860 MHz UHF TV bands. Internally input-matched for ease of design and broadband operation, the MRF6VP3091NBR1 reduces external matching component count versus legacy bipolar parts. The LDMOS architecture uses a laterally-diffused drift region to support the high drain voltage while maintaining low on-resistance and high switching speed. NXP's generation-6 LDMOS process delivers high efficiency (~31% typical at 860 MHz) and excellent thermal performance through the TO-272 WB-4 over-molded plastic package, with an operating junction temperature up to 200 C and a plastic MO-217 style body that simplifies board mounting versus ceramic flanged parts. Typical applications include UHF TV transmitter final stages (470-860 MHz DVB-T/ATSC), commercial aerospace broadband amplifiers, industrial RF heating, and scientific particle accelerator RF sources. The wide broadband response makes the device a versatile final-stage amplifier for multi-band broadcast transmitters where one part covers the entire UHF band without band-switching. When designing with this device, ensure adequate thermal management: with 90 W peak RF output and ~31% drain efficiency, approximately 200 W of waste heat must be dissipated. Use a copper heatsink or cold plate with forced air cooling to maintain junction temperature below the maximum rating. Always sequence the gate bias (VGS) before applying drain voltage (VDD) to prevent uncontrolled current surges during startup. This page synthesizes distributor pricing, same-package and cross-package alternatives, parametric comparison, and practical RF design notes not found in the manufacturer datasheet alone. Engineers can evaluate drop-in drop-out options for hard-to-source or end-of-life broadcast RF transistors.
MRF6VP3450HR6 - 860 MHz 450W RF Power MOSFET | NXP Semiconductors
The NXP Semiconductors MRF6VP3450HR6 is a 50 V, 860 MHz N-Channel Enhancement-Mode Lateral RF Power MOSFET delivering 22.5 dB gain and 450 W output power in a NI-1230 ceramic package. Designed for broadband commercial and industrial transmitter applications, it operates across the 470 to 860 MHz UHF band, making it a drop-in power device for DVB-T, ATSC, and analog TV transmitter final stages. The high gain and broadband performance suit large-signal common-source amplifier topologies used in 50 V analog or digital television transmitter equipment. A lateral-diffused MOS (LDMOS) power transistor is a specialized MOSFET optimized for RF power amplification rather than low-frequency switching. LDMOS devices achieve high breakdown voltage, high gain, and excellent thermal performance by laterally diffusing the drain region under the gate oxide. Within the broader hierarchy of power transistors, LDMOS sits between traditional silicon MOSFETs and GaN HEMTs in capability, dominating the UHF/VHF broadcast and cellular infrastructure market where 50 V operation is standard. Key specifications include 50 V drain-source rating, 22.5 dB typical power gain at 860 MHz, 450 W CW output power, 1.4 A typical quiescent bias current, and broadband performance from 470 to 860 MHz. The lateral N-channel enhancement-mode structure enables simple class-AB biasing with a single positive gate supply. The NI-1230 ceramic package provides a low thermal resistance path and is bolt-down compatible with industry-standard broadcast RF pallets. Typical applications include DVB-T/DVB-T2 UHF TV transmitter final stages, ATSC digital television transmitters, analog VHF/UHF broadcast amplifiers, industrial RF heating sources at 860 MHz, and broadband RF generator instrumentation. The MRF6VP3450HR6 is also used as a driver for higher-power UHF broadcast pallets in stacked amplifier configurations. When designing with this part, ensure adequate heat-sinking through the bolted flange and maintain proper output load network matching for the target band. The MRF6VP3450HR6 requires a regulated 50 V drain supply and a low-noise gate bias supply; designers should sequence gate voltage before drain voltage to prevent thermal runaway during startup. This page synthesizes NXP datasheet specifications, parametric alternatives, and application design considerations for the MRF6VP3450HR6, providing engineering context beyond the manufacturer datasheet.
MRF6VP3450HSR5 - 450W RF Power LDMOS, 470-860 MHz | NXP
The NXP MRF6VP3450HSR5 is a 450 W RF power LDMOS field-effect transistor designed for broadband commercial and industrial applications in the 470 to 860 MHz UHF band, supplied in the NI-1230-4S ceramic/bolt-down chassis-mount package. The device is an N-channel enhancement-mode lateral MOSFET specified for 50 V operation, with a 22.5 dB typical power gain and 110 V minimum drain-source breakdown. It delivers rated output power of 450 W at the 860 MHz band edge, with an additional pulsed rating of 90 W available from a separate variant listing. An RF power LDMOS (Laterally Diffused Metal-Oxide Semiconductor) FET is a specialized power transistor designed for high-frequency, high-power amplification. Unlike small-signal MOSFETs used in logic or low-power analog, RF power LDMOS devices use a lateral structure on a silicon die to combine high breakdown voltage, high gain, and good thermal performance in a single robust package. They belong to the broader hierarchy: RF power transistor -> power semiconductor -> discrete semiconductor, and dominate UHF/VHF broadcast, mobile-radio, and industrial-scientific-medical (ISM) power amplifier stages because of their excellent gain linearity and ruggedness under VSWR mismatch. The MRF6VP3450HSR5 provides 22.5 dB typical gain at 860 MHz, with broadband performance suitable for both analog and digital television transmitter PA stages. The device is optimized for common-source class-AB operation and is rated for continuous-wave (CW) as well as pulsed signal formats. Internally matched partially for ease of use, the transistor integrates ESD protection and is designed for long-term reliability at elevated flange temperatures typical of broadcast service. Typical applications include UHF digital TV transmitter final stages (DVB-T, ATSC, ISDB-T), analog TV transmitter PAs in the 470-860 MHz band, industrial RF heating and plasma drivers, and broadband general-purpose amplifiers for scientific instrumentation. The wide bandwidth also makes it suitable for multi-channel combiner systems used in shared transmitter facilities. When designing with the MRF6VP3450HSR5, allocate a substantial copper or spreader heat sink and ensure the bolt-down flange is mounted with proper torque and thermal compound. The drain bias should be applied through a sequenced supply to prevent in-rush currents, and the input/output matching networks must be tuned for the specific frequency sub-band within 470-860 MHz to achieve rated gain and efficiency. A circulator or isolator is recommended at the output to protect the device from load VSWR transients. This page consolidates distributor inventory, datasheet references, and design guidance for engineers evaluating or sourcing the MRF6VP3450HSR5 for UHF power amplifier designs - information not present on a single distributor or manufacturer page.
MRF6VP41KHR5 - 1000W 450MHz RF Power MOSFET | NXP
The NXP MRF6VP41KHR5 is a lateral N-channel broadband RF power MOSFET designed for high-power VHF/UHF applications. Operating from 10 MHz to 500 MHz at 50 V, the device delivers 1000 W of output power with a 20 dB power gain at 450 MHz in the NI-1230 ceramic package. It is optimized for pulse and continuous-wave (CW) wideband operation. An RF power MOSFET is a specialized lateral double-diffused metal-oxide-semiconductor transistor engineered to deliver high RF output power at frequencies ranging from HF through UHF. The MRF6VP41KHR5 belongs to NXP's RF Power Discrete portfolio (N-channel lateral MOSFETs), which sits within the broader power management and discrete semiconductor hierarchy. It is purpose-built for industrial, scientific, and medical (ISM) bands, broadcast, and aerospace/defense pulsed-RF systems where high peak power and ruggedness are required. Key specifications include a 50 V drain-source breakdown rating, 150 mA quiescent drain current at idle, 20 dB typical power gain, and 1000 W CW output power. The device supports broadband operation from 10 MHz to 500 MHz, providing flexibility for multi-band transmitters. Its NI-1230 ceramic package provides low thermal resistance for sustained high-power operation. The transistor employs NXP's high-voltage lateral MOSFET process technology, which integrates a thermally robust die and internal matching networks optimized for broadband gain. Built-in ESD protection and high drain-source voltage tolerance enhance reliability under mismatched-load conditions. The lateral architecture delivers higher breakdown voltage and better linearity than comparable vertical MOSFETs. Typical applications include 1000 W pulsed-RF amplifiers for industrial heating, particle accelerators, and radar transmitters operating in the 100-500 MHz range. It is also used in VHF/UHF broadcast amplifiers and high-power broadband jamming/communications systems. When designing with the MRF6VP41KHR5, ensure adequate heat-sinking through the package flange; the device dissipates significant power at 1 kW output. Bias sequencing and drain-Voltage protection must follow NXP application note guidelines for VHV6-series devices. This page consolidates distributor pricing, drop-in alternates, and engineering notes not aggregated in the NXP datasheet, providing additional value for procurement and RF design teams.
MRF6VP41KHR7 - 450MHz 1000W RF Power MOSFET | NXP
The NXP MRF6VP41KHR7 is a dual-channel, N-channel enhancement-mode lateral MOSFET designed for very-high-voltage pulsed RF power applications up to 450 MHz. It delivers 1000 W of pulsed output power with 20 dB gain at 50 V test voltage and 150 mA bias current, housed in the NI-1230 ceramic package. The device is specifically designed for use in industrial, medical, and scientific pulsed wideband applications with operating frequencies from 10 MHz to 500 MHz. RF Power MOSFETs are specialized transistors built to deliver high RF power levels to a 50-ohm load, typically used in the final stage of a transmitter chain. They are categorized under the broader family of power transistors, which includes BJTs, LDMOS, and GaN devices. Within the LDMOS family, the MRF6VP41KHR7 belongs to NXP's VHV6 (very-high-voltage, 6th generation) platform targeting pulsed applications at voltages up to 110 V. The lateral MOSFET structure provides high breakdown voltage, low thermal resistance, and excellent gain flatness across the operating band. Key electrical features include a 110 V drain-source voltage rating (Vds), 50 V test bias for 1000 W pulsed output, 20 dB typical gain, and unmatched input/output that allows flexibility in external matching network design. The NI-1230 package is a high-performance ceramic flange-mount construction providing low thermal resistance and robust mechanical mounting suitable for high-power pulsed amplifiers. The MRF6VP41KHR7 utilizes NXP's 6th-generation high-voltage LDMOS process, which integrates drain-to-source breakdown protection, ESD protection, and a source-connected metal flange for direct heatsink attachment. The lateral geometry supports very high breakdown voltage with low parasitic capacitances, enabling high drain efficiency in Class AB or Class C pulsed amplifier topologies. Typical applications include pulsed radar transmitters, MRI RF power amplifiers, particle accelerator RF sources, and pulsed industrial heating systems. Designers select this part when system requirements demand 1000 W peak power with high duty cycle and high voltage operation. A critical design consideration is heatsinking: at 1000 W pulsed output with realistic efficiencies, the device dissipates significant average power and must be bolted to a forced-air or liquid-cooled heatsink. Input/output matching must be designed for the specific frequency band of operation since the part is internally unmatched. This page synthesizes distributor pricing, application context, and design notes that complement, but do not replace, the manufacturer's datasheet.
MRF7P20040HSR3 - 10W RF Power LDMOS 2.03GHz | NXP
The NXP Semiconductors MRF7P20040HSR3 is a single W-CDMA lateral N-channel RF power MOSFET rated for 10 W average output power, 32 V test condition, and 18.2 dB gain at 2.03 GHz, housed in the NI-780S-4L ceramic package designed for cellular base station applications from 2010 to 2025 MHz. The device uses NXP's seventh-generation LDMOS (Laterally Diffused Metal-Oxide Semiconductor) process technology optimized for W-CDMA, CDMA, and LTE modulation formats in the 1.8-2.2 GHz band. The part supports Class AB and Class C amplifier operation and is engineered to handle 5:1 VSWR mismatches at 32 V DC and 2017.5 MHz with 50 W CW output power capability at the 3 dB compression point. The dual-die 'HS' suffix variant provides higher power density than the single-die HR version while sharing the same NI-780S-4L ceramic footprint for footprint-compatible design scaling. RF power MOSFETs (metal-oxide semiconductor field-effect transistors) are specialized power transistors designed for high-frequency amplification in the MHz-to-GHz range. The MRF7P20040HSR3 belongs to the LDMOS family, which dominates cellular base station power amplifier (PA) designs because of its high breakdown voltage, excellent thermal stability, and superior RF ruggedness compared to GaAs or bipolar alternatives. Within the broader semiconductor hierarchy, RF power MOSFETs sit alongside GaN HEMTs and SiC MESFITs as the primary technologies for sub-6 GHz high-power amplification. Key differentiating features of the MRF7P20040HSR3 include 18.2 dB typical gain at 2.03 GHz, a 65 V drain-source breakdown rating for robust transient survival, and a 100% PAR (peak-to-average ratio) tested guarantee for W-CDMA modulation signals. Production testing is performed in a symmetrical Doherty configuration, confirming the device's compatibility with high-efficiency Doherty amplifier architectures commonly used in modern LTE and 5G-NR base stations. The LDMOS process delivers higher drain efficiency than competing bipolar transistors when biased for Class AB operation, while supporting the wide instantaneous bandwidth required for multi-carrier signal aggregation. The NI-780S-4L ceramic package provides low thermal resistance and excellent RF grounding through its integrated lead frame. Typical applications include W-CDMA and LTE base station final-stage power amplifiers, CDMA2000 driver amplifiers, and Doherty amplifier modules operating in the 1.8 to 2.2 GHz cellular band. The device is also used in repeaters, microcells, picocells, and indoor distributed antenna systems. Designers should note that the MRF7P20040HSR3 requires a carefully designed impedance-matching network to achieve rated gain and efficiency. Proper thermal management through the ceramic package mounting surface is essential, and bias sequencing must follow NXP application note guidelines to prevent parametric drift. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, providing engineers with a comprehensive reference for evaluating the MRF7P20040HSR3 against NXP's broader 7-series RF MOSFET family.
MRF7S16150HSR3 - 32W RF Power LDMOS, 1.6GHz WIMAX | NXP
The NXP Semiconductors MRF7S16150HSR3 is an RF power field-effect transistor built on a high-voltage N-channel enhancement-mode lateral MOSFET (LDMOS) process, delivering 32 W of output power across the 1.6 GHz to 1.66 GHz band (WIMAX / WiMAX-class) in a ceramic, metal-sealed cofired NI-780S (HSR3) package. Operating from a 28 V drain supply, the device achieves 19.7 dB power gain at 1.5 A quiescent bias and is designed for class AB or class C base-station amplifier stages where long-term RF ruggedness and stable thermal performance are required. A radio-frequency power MOSFET (RF LDMOS) is a lateral double-diffused metal-oxide-semiconductor transistor optimized for high-frequency, high-power amplification. Within the broader taxonomy, an RF LDMOS sits below the generic power MOSFET family and above general-purpose small-signal MOSFETs; it is the dominant transistor technology for sub-3 GHz macro-cellular base-station power amplifiers because of its high breakdown voltage, high gain-per-watt, and ease of broadband matching. The MRF7S16150HSR3 specifically targets the 1.6 GHz segment (pre-WiMAX / WLL / public-safety bands) where GaN-on-SiC has not yet displaced legacy LDMOS on cost grounds. Key features include a 65 V minimum drain-source breakdown rating for high-voltage over-headroom margin, an integrated electrostatic discharge (ESD) protection network, and a thermally efficient NI-780S ceramic package whose source leads are connected directly to the mounting flange. The 19.7 dB gain figure at 1.6 GHz allows a single-device drive stage to feed a final-output chain at modest input level, reducing board complexity in macro-BTS and repeater designs. Typical applications include 1.6 GHz WIMAX base-station power amplifiers, fixed wireless access (FWA) customer-premises equipment, public-safety and military UHF/L-band amplifier blocks, and industrial RF heating sources. The LDMOS technology gives the MRF7S16150HSR3 superior linearity and ruggedness versus older silicon bipolar RF parts, while the SOI-style lateral structure delivers the thermal headroom needed for continuous duty in outdoor BTS cabinets. When designing with this part, ensure the device flange is mounted flat against a copper or aluminum heat-spreader with thermal compound; the source pins are internally tied to the package body, so inadequate mounting will cause severe thermal runaway. Bias sequencing must follow the VGS-on-before-VDS-on / VDS-off-before-VGS-off rule to avoid forward-biasing the parasitic drain-to-body diode into a short-circuit condition. This product page aggregates current distributor pricing, real cross-reference candidates, and applied engineering notes so that RF power designers can make sourcing and substitution decisions in one place without re-keying the datasheet.
MRF7S16150HSR5 - 32W 1.6GHz WiMAX RF MOSFET | NXP
The NXP MRF7S16150HSR5 is an N-channel enhancement-mode lateral MOSFET (LDMOS) designed for 1.6 GHz WiMAX base-station power amplifiers, operating across 1600–1660 MHz with a 32 W typical output power at 28 V, 1.5 A bias. Packaged in the NI-780S ceramic flange-mount case (the ceramic/bolt-down "S" body), it is the R5 tape-and-reel variant aimed at high-volume assembly lines. The LDMOS RF power transistor is a member of the lateral-DMOS family that dominates cellular and broadband wireless infrastructure transmitters. LDMOS combines lateral channel geometry with a diffusion-defined drift region, yielding high breakdown, high gain, and inherent thermal stability on Si substrates. Within the broader semiconductor hierarchy, the MRF7S16150HSR5 sits in: RF power transistor > RF MOSFET > power MOSFET > discrete semiconductor > semiconductor. It is a single-band, single-polarity, common-source amplifier building block. Key features per the manufacturer datasheet include 19.7 dB typical power gain at 1.66 GHz, 65 V drain-source breakdown rating, and operation at 28 V nominal VDS. The part is rated for Class AB / Class C amplifier topologies used in WiMAX, WiBro, BWA, and OFDM multicarrier transmitters. Its ceramic NI-780S flange is designed to be bolted directly to a heatsink or copper spreader for lowest thermal resistance. Typical applications include 1.6 GHz WiMAX macro-cell base-station power amplifiers, broadband fixed-wireless-access transmitters, OFDM Class AB driver or final stages, and ISM-band pulsed RF power stages around 1.6–1700 MHz. The 19.7 dB gain allows two-stage PA designs with a single driver feeding the MRF7S16150HSR5 final. When designing with this device, observe the 65 V VDS absolute maximum, gate bias sequencing (negative VGS during power-down), and soldering guidelines for ceramic flange packages—the flange body must never be exposed to flux or solder. Proper heat-sinking and a low-inductance source grounding strategy are critical for stable RF performance. This page synthesizes distributor pricing, R5-tape-and-reel inventory across Mouser, DigiKey, and LCSC, and an MRF7S16150 family comparison that goes beyond what the manufacturer datasheet alone provides—including NI-780-4 versus NI-780HS analysis for sourcing engineers.
MRF7S18170HR3 - 50W 1.81GHz RF Power LDMOS | NXP Semiconductors
The NXP MRF7S18170HR3 is an RF power field-effect transistor built on N-channel enhancement-mode lateral MOSFET (LDMOS) technology, delivering 50 W of output power at 1.81 GHz with 17.5 dB gain from a 28 V supply. It is housed in the NI-880H-2L ceramic, metal-sealed cofired flange-mount package and is targeted at CDMA and multicarrier base-station amplifier applications in the 1805–1880 MHz band. An RF power LDMOS is a laterally diffused metal-oxide-semiconductor transistor optimized for high-frequency, high-power amplification. Within the broader semiconductor taxonomy it is a discrete power MOSFET, and within RF it is classified as an RF power transistor. LDMOS dominates cellular base-station power amplifiers because it offers high drain efficiency, broadband operation, and excellent ruggedness into high VSWR loads, while remaining cost-effective compared to GaN alternatives. Key specifications include a maximum drain-source rating of 65 V, typical operating drain voltage of 28 V, quiescent drain current of 1.4 A under test, and a power gain of 17.5 dB at 1.81 GHz. The device supports broadband commercial and industrial operation up to roughly 1000 MHz in the same package family, and is designed for Class AB and Class C amplifier topologies common in Doherty and push-pull final stages. Architecturally, the MRF7S18170HR3 uses an enhancement-mode lateral structure that simplifies biasing by eliminating the need for a negative gate supply. The ceramic NI-880H-2L flange provides low thermal resistance from junction to heatsink, allowing continuous-wave RF operation at the rated 50 W output. Integrated ESD protection and high breakdown voltage improve field reliability in base-station environments. Typical applications include CDMA2000 and WCDMA macro-cell base-station power amplifiers, multicarrier driver amplifiers, and broadband industrial RF generators. The 1.81 GHz tuning point also covers the 1800 MHz DCS band, making the part flexible for European cellular deployments. When designing with this part, ensure the heatsink interface uses thermal compound and that the flange-mount screws are torqued to the datasheet specification to minimize thermal resistance. Input/output matching networks should be designed for the 50 Ω test condition; mismatch beyond 5:1 VSWR requires verifying the device remains within its SOA envelope. This page synthesizes distributor pricing, parametric alternatives, and application guidance not consolidated in the manufacturer datasheet, and is organized for engineers selecting RF power transistors for cellular infrastructure.
MRF7S19080HR3 - 24W 1.99GHz RF Power LDMOS | NXP | Base Station
The NXP MRF7S19080HR3 is a single W-CDMA lateral N-channel RF power MOSFET (LDMOS) designed for CDMA base station applications, delivering 24 W average output power across 1930-1990 MHz from a 28 V supply in a NI-780H-2L ceramic package. It provides 18 dB power gain, 32 % drain efficiency at 24 W Pout, and -38 dBc ACPR at 5 MHz offset for 3.84 MHz channel bandwidth W-CDMA signals, with quiescent current IDQ = 750 mA. A lateral N-channel enhancement-mode RF power MOSFET (LDMOS) is a high-power transistor architecture in which the current-carrying channel is oriented laterally along the die, enabling high breakdown voltage, high gain, and excellent ruggedness under severe mismatch (high VSWR). Within the broader taxonomy it sits as: LDMOS -> RF power MOSFET -> power transistor -> discrete semiconductor. LDMOS dominates the cellular base-station PA market from 700 MHz to 2.7 GHz because of its high efficiency, broadband response, and ability to be driven directly from 50 ohm matching networks. Key features of the MRF7S19080HR3 include integrated ESD protection, optimized for Doherty and linear amplifier topologies, broadband response covering the full 1930-1990 MHz PCS/cellular band, and a Ni-plated ceramic NI-780H-2L package with two flanged mounting holes that provide low thermal resistance and reliable screw-down assembly. Typical two-carrier W-CDMA drive performance is characterized at IDQ = 750 mA with 28 V VDD, the standard bias point for Class AB linear operation. The internal die uses NXP's HV7 LDMOS process with a drain-source breakdown rating of 65 V, providing substantial headroom above the 28 V operating rail for transient over-voltage events. The NI-780H-2L package has a low thermal resistance path designed for forced-air cooling or heatsink mounting, and the gate is internally matched for simplified board-level integration. Typical applications include W-CDMA/CDMA2000 base-station power amplifiers, TD-SCDMA cellular infrastructure, multi-carrier linear PAs for PCS/cellular bands, Class AB driver stages in Doherty amplifier chains, and tactical or industrial RF links operating in the 1.9 GHz band. Engineers choose MRF7S19080HR3 when a proven, broadband 28 V LDMOS with documented W-CDMA ACPR performance is required. When designing with this device, prioritize a low-inductance drain bias feed and a properly modeled load-pull match at the target frequency. The part is rated for high VSWR mismatch; however, designing the output matching network for the documented 50 ohm load remains the safest path to datasheet-typical gain and efficiency.