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K4RAH165VB-BIWM

K4RAH165VB-BIWM - 16Gb DDR5 1Gx16 5600Mbps DRAM | Samsung

The Samsung K4RAH165VB-BIWM is a 16Gb (1G x 16) DDR5 SDRAM DRAM component operating at 1.1V with a 5600Mbps data rate, housed in a 106-ball FBGA package rated for 0C to +85C operation. DDR5 SDRAM (Double Data Rate 5 synchronous dynamic random-access memory) is the fifth generation of the JEDEC DDR DRAM family used as main memory in servers, networking platforms, and advanced embedded systems. Within the memory hierarchy, DRAM sits between CPU caches and storage, and DDR5 succeeds DDR4 with higher bandwidth, lower operating voltage, on-die ECC, and on-chip termination improvements. Samsung is a tier-one DRAM manufacturer and the K4RAH family represents its B-die generation DDR5 components. Key features of the K4RAH165VB-BIWM include a 16Gb single-die density organized as 1G x 16, a 1.1V core supply that reduces power consumption versus DDR4, and a 5600Mbps pin speed for high-bandwidth memory subsystems. The x16 organization suits platforms whose memory controllers use 16-bit-wide channels or split-channel topologies. The device incorporates DDR5-standard functions reported for the K4RAH165VB family, including on-die error correction code (ECC), automatic self-refresh, asynchronous reset, write leveling, CRC, and ZQ calibration, per Samsung datasheet documentation. Typical applications include data-center server main memory, networking and telecom line-card buffering, industrial and embedded computing platforms requiring DDR5 bandwidth, and high-performance client systems. Design consideration: DDR5 power integrity is critical. The 1.1V VDD rail requires a dedicated PMIC (such as the common DDR5 rail management ICs), tight decoupling, and length-matched fly-by routing for the CA bus. This page synthesizes distributor stock data, Samsung datasheet references, and same-family drop-in alternatives not consolidated in the manufacturer datasheet. Pricing as of 2026-09-04.

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K4RAH165VP-BCWM

K4RAH165VP-BCWM - 16Gb DDR5 SDRAM 5600Mbps 1.1V | Samsung

The Samsung Semiconductor K4RAH165VP-BCWM is a 16Gbit DDR5 SDRAM DRAM chip organized as 1G x 16, operating at data rates up to 5600 Mbps with a nominal supply voltage of 1.1 V, housed in a 106-ball FBGA package. DDR5 SDRAM (Double Data Rate 5 synchronous dynamic random-access memory) is the fifth generation of the JEDEC DDR DRAM family and the successor to DDR4. In the memory hierarchy, DRAM sits below CPU caches but above storage (SSD/NAND) as the main system memory. DDR5 introduces two independent 32-bit sub-channels per DIMM, an on-die power management IC (PMIC), on-die ECC, and double the bank groups of DDR4, which together improve effective bandwidth and power efficiency by roughly 30% compared to DDR4 at equivalent capacities. Key features of this device include its 16Gbit density (double the previous-generation 8Gb monolithic die), 5600 Mbps transfer rate, low 1.1 V core operation, and an x16 organization suited to bandwidth- and density-balanced client and mobile designs. The FBGA-106 package minimizes board area and shortens signal paths, supporting the tight timing margins required at DDR5 speeds. Architecturally, the die uses Samsung advanced DRAM process technology with bank-group parallelism and a DLL-enabled mode of operation; the manufacturer specification covers timing parameters for DLL enabled mode, with common features described in the separate Samsung Device Operation datasheet. On-die power management reduces external rail complexity and improves supply noise immunity. Typical applications include mobile devices and tablets, consumer electronics, embedded computing, set-top boxes, networking equipment, and compact PC main-memory subsystems where x16 DRAM components populate SO-DIMM or soldered-down memory configurations. Designers should observe DDR5 routing rules: length-matched fly-by or balanced-tree command/address topologies, on-die termination (ODT) configuration, and clean 1.1 V VDD rails supplied by a PMIC-compatible regulator. Signal integrity simulation at 5600 Mbps is strongly recommended before tape-out. This page synthesizes distributor pricing, drop-in alternatives from the Samsung K4RAH DDR5 family, and practical design notes not consolidated in the manufacturer datasheet.

USD $24.61 在庫あり

K4RBH046VM-BCCP

K4RBH046VM-BCCP - 32Gb DDR5 6400Mbps DRAM | Samsung

The Samsung K4RBH046VM-BCCP is a 32 Gb DDR5 SDRAM memory IC organized as 2G x 4, operating at 6400 Mbps data rate with a 1.1 V supply, housed in a 78-ball FBGA package. DDR5 SDRAM (Double Data Rate 5 synchronous dynamic random-access memory) is the fifth generation of JEDEC-defined high-bandwidth volatile memory. Within the memory hierarchy it sits as DRAM -> synchronous DRAM (SDRAM) -> DDR SDRAM -> DDR5, serving as the main working memory between processors and storage in servers, workstations, and high-performance computing platforms. Key features of this device include the high 32 Gb per-die density enabled by advanced DRAM process technology, the 2G x 4 organization favored by ECC-protected server channels, and the DDR5-6400 speed grade delivering substantially more than double the per-pin bandwidth of comparable DDR4 devices. DDR5 also introduces on-die ECC, a 12-bit pre-fetch architecture, and lower operating voltage (1.1 V) that together improve reliability and power efficiency. The 2G x 4 organization means a x4-wide interface, typically deployed eight or sixteen deep in registered DIMMs with in-line ECC for servers and data center platforms. The BCCP speed bin corresponds to 6400 Mbps per pin over the commercial operating temperature range of 0 C to +85 C. Typical applications include DDR5 RDIMM/LRDIMM modules for data center servers, high-performance computing memory subsystems, networking equipment, and industrial systems requiring long-term availability of DDR5 components. When designing with this device, follow Samsung's power-distribution and fly-by-termination guidelines for DDR5: the 1.1 V core supply and separate DQ VDDQ rails require tight decoupling, and address/command bus termination must match the module topology. This page synthesizes distributor stock data, parametric comparisons, and drop-in alternative analysis not found in the manufacturer datasheet.

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K4RBH046VM-BCWM

K4RBH046VM-BCWM - 32Gb DDR5 5600Mbps DRAM | Samsung | Server

The Samsung K4RBH046VM-BCWM is a 32 Gb DDR5 SDRAM memory component organized as 2G x 4, operating at 5600 Mbps data rate from a 1.1 V supply, housed in a 78-ball FBGA package. DDR5 SDRAM (Double Data Rate 5 synchronous dynamic random-access memory) is the fifth generation of DDR memory technology and sits at the top of the DRAM hierarchy within the broader volatile memory and semiconductor storage taxonomy. Unlike its DDR4 predecessor, DDR5 moves the power management onto the module via a PMIC, doubles the bank groups, and lowers the operating voltage from 1.2 V to 1.1 V, enabling higher bandwidth with reduced power per bit transferred. Key features of the K4RBH046VM-BCWM include its 32 Gb density in a x4 organization, a 5600 Mbps pin speed suited for DDR5-5600 platforms, a 1.1 V core supply, and an operating temperature range of 0 to 85 degrees C. The x4 organization is specifically favored in registered server DIMMs where high data integrity is achieved through chipkill-class error correction, since narrow-width parts allow ECC to isolate single-device failures. Technically, the device implements a synchronous DRAM interface with burst-based transfers synchronized to an external clock reference, per Samsung DDR5 component design. Its electrical and functional behavior is defined by the DDR SDRAM interface specifications and memory array characteristics of the DDR5 generation. According to Samsung product listings, the part is intended for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. Typical applications include data center server main memory (registered DIMM populations), networking equipment requiring high-bandwidth buffering, and advanced embedded or industrial computing modules where 32 Gb per device reduces component count on dense boards. A key design consideration is thermal and signal integrity: at 5600 Mbps the FBGA ball map and PCB fly-by routing must respect DDR5 trace-length matching and on-die termination settings, and the 0 to 85 degrees C range should be derated against module-level airflow conditions. This page synthesizes distributor stock data, drop-in alternative candidates, and practical design notes not found in the manufacturer datasheet.

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K4RBH086VB-BCQK

K4RBH086VB-BCQK - DDR5 16Gb 4800Mbps DRAM | Samsung

The Samsung K4RBH086VB-BCQK is a 16Gb DDR5 SDRAM DRAM memory IC organized as 2G x 8, supporting data rates up to 4800 Mbps at a 1.1V core supply, housed in an FBGA-82 surface-mount package. According to Samsung's 16Gb DDR5 datasheet family (K4RAH/K4RBH 2Gx8 series), these devices integrate an on-die ECC engine and rely on the DDR5 module PMIC architecture for power management, delivering roughly 30% better power efficiency than DDR4. DDR5 SDRAM (Double Data Rate 5 synchronous dynamic random-access memory) is the fifth generation of JEDEC DDR DRAM. In the memory hierarchy it sits as main-system memory below cache SRAM and above storage NAND, feeding CPUs, GPUs, and AI accelerators in servers, workstations, and high-performance computing platforms. DDR5 doubles bank groups versus DDR4, lowers the operating voltage from 1.2V to 1.1V, and moves power regulation onto the memory module through a PMIC 5000. Key features of this Samsung 16Gb DDR5 device include the 4800 Mbps data rate (PC5-38400 class performance), x8 organization suited to registered DIMMs and embedded memory down, on-die ECC (ODECC) that corrects internal bit errors without bus overhead, and low 1.1V operation that reduces power per bit transferred. The FBGA-82 ball grid array package provides short interconnects for signal integrity at multi-gigabit rates. Architecturally, the die is split into two independent 8Gb half-pages with separate DCA/CA buses, allowing a memory controller to address one half while the other refreshes, improving effective bandwidth. DLL-enabled mode operation and programmable RL/WL latencies let designers tune timing to the platform. Typical applications include cloud and enterprise server RDIMMs, AI accelerator HBM-adjacent host memory, high-performance desktop/workstation UDIMMs, and embedded computing modules requiring dense DRAM. Design consideration: DDR5 signal integrity demands length-matched fly-by routing of CA/CS and DQ/DQS nets, and the 1.1V rail must be delivered by a compliant PMIC with proper sequencing; do not reuse DDR4 power trees. This page synthesizes distributor stock data, drop-in Samsung family alternatives, and design guidance not found in the manufacturer datasheet. Pricing is quoted via RFQ as of 2026-09-04.

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K4RBH165VB-BCQK

K4RBH165VB-BCQK - DDR5 16Gb 4800Mbps DRAM | Samsung

The Samsung K4RBH165VB-BCQK is a 16 Gb DDR5 SDRAM component organized as 1G x 16, operating at a data rate of 4800 Mbps/pin in a fine-pitch BGA surface-mount package. Note: the verified web data retrieved for this request corresponds to the closely related Samsung K4RAH165VB-BCQK (DDR5 16 Gb, 4800 Mbps, 1G x 16); the K4RBH165VB-BCQK belongs to the same Samsung DDR5 16Gb family and shares these headline parameters. DDR5 SDRAM is the fifth generation of Double Data Rate synchronous dynamic random-access memory, the dominant volatile memory technology at the top of the memory hierarchy in servers, workstations, and high-performance client systems. Compared with DDR4, DDR5 doubles the internal bank count to 32, moves power management onto the DIMM or module via a PMIC, lowers the operating voltage to approximately 1.1 V, and doubles burst length to BL16, improving bandwidth and channel efficiency per DRAM. Key features reported for this device family include an operating temperature range of 0 C to +85 C, auto self-refresh, an asynchronous reset function, on-chip error correction code (On-die ECC), write leveling, CRC and CA parity functions, and ZQ calibration, according to the LCSC product listing for the K4RAH165VB-BCQK variant. These features sustain data integrity and signal integrity at 4800 Mbps/pin data rates in dense memory subsystems. Architecturally, the device uses a x16 I/O organization with 1G addressable locations, DDR5 bank-group architecture, and on-die ECC that corrects internal bit errors before data reaches the I/O, improving effective reliability without external ECC overhead. The BCQK speed grade denotes the 4800 Mbps bin within the Samsung DDR5 family. Typical applications include DDR5 server RDIMM and client SO-DIMM modules, desktop and workstation UDIMMs, embedded memory subsystems for networking equipment, and high-bandwidth computing platforms where 16 Gb density per component reduces component count on the module. Design consideration: DDR5 requires the companion PMIC (such as the on-DIMM power management device) and careful DQ/CA trace length matching per JEDEC DDR5 routing guidelines; termination settings differ from DDR4 and must not be directly ported. This page synthesizes verified distributor data, drop-in family alternatives, and practical design notes not found in the manufacturer datasheet.

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K4RBH165VB-BCWM

K4RBH165VB-BCWM - 16Gb DDR5 SDRAM 1.1V FBGA | Samsung

The Samsung K4RBH165VB-BCWM is a 16 Gbit DDR5 SDRAM memory IC organized as 1G x 16, operating from a 1.1V supply in a 106-ball FBGA (FBGA-106) surface-mount package with RoHS compliance. DDR5 SDRAM (Double Data Rate 5 synchronous dynamic random-access memory) is the fifth generation of the JEDEC DDR memory family. In the system hierarchy it sits as: DDR5 SDRAM -> DRAM -> volatile memory IC -> semiconductor memory. Compared with DDR4, DDR5 doubles the internal bank count, moves the power management onto the module with a PMIC, and halves the per-channel word length to improve concurrency and effective bandwidth. Key features of this device include its 16 Gbit single-die density, a x16 data organization suited to designs that populate fewer devices per channel, a low 1.1V core voltage that reduces dynamic power relative to DDR4's 1.2V, and an industrial 0C to +85C operating range. On-chip error correction code (ECC), write CRC, write leveling, auto self-refresh, and asynchronous reset - features documented for the Samsung 16Gb B-die DDR5 x16 family - improve data integrity and signal integrity margins at high data rates. Technically, the device operates in DLL-enabled mode per the Samsung 16Gb DDR5 specification (Rev 1.x series), which governs the timing parameters for command and data transfer. Ball-out, refresh scheduling, and mode register definitions follow JEDEC DDR5 conventions, allowing drop-in use on standard DDR5 x16 footprints within the same speed-grade family. Typical applications include data-center server memory subsystems, high-performance computing platforms, industrial systems requiring long-term DDR5 availability, and mobile/consumer platforms using discrete x16 DRAM. A key design consideration: DDR5 requires an external power management IC for the 1.1V VDD rail, and on-die ECC must be accounted for when matching this part against module-level ECC designs. This page adds value beyond the datasheet by synthesizing distributor stock and pricing data, drop-in alternatives from the same Samsung DDR5 x16 family, and practical design notes in one place.

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K4RCH046VM-2CCM

K4RCH046VM-2CCM - DDR5 32Gb 5600Mbps DRAM | Samsung

The Samsung K4RCH046VM-2CCM is a DDR5 SDRAM memory IC with a 32Gb density organized as 4G x 4, a data rate of 5600 Mbps, and a 1.1 V operating voltage, housed in a 78-ball FBGA package. DDR5 SDRAM (Double Data Rate 5 Synchronous Dynamic Random Access Memory) is the fifth generation of the DDR memory family, the dominant main-memory technology in computing systems. In the system hierarchy it sits under volatile semiconductor memory -> DRAM -> synchronous DRAM -> DDR SDRAM -> DDR5. Compared with DDR4, DDR5 doubles the burst length, moves the power management IC onto the module, and delivers roughly 30% better power efficiency, according to Samsung Semiconductor. Key features of this device include the 5600 Mbps data rate (PC5-44800 class bandwidth), the x4 organization suited to ECC-protected server and workstation memory subsystems, and the low 1.1 V core supply that reduces memory-subsystem power draw. The commercial temperature range of 0 to 85 degrees C covers standard computing environments. Samsung lists the product status as Sample, meaning it is in the pre-mass-production qualification stage. The 78-ball FBGA (Fine-Pitch Ball Grid Array) surface-mount package provides short interconnects, low parasitic inductance, and good signal integrity at multi-gigabit data rates. FBGA is the industry-standard package family for discrete DRAM components and supports standard SMT reflow assembly. Typical applications include DDR5 RDIMM and server memory modules, workstation and desktop PC main memory, networking and communication equipment requiring high-bandwidth buffering, and consumer electronics adopting the DDR5 platform. Design consideration: DDR5 requires a dedicated PMIC (such as the on-DIMM 5V-to-1.1V converter), on-die ECC handling at the controller, and careful length-matched routing to the 5600 Mbps signal environment; verify the JEDEC DDR5 slot and chip-enable configuration before layout. This page synthesizes distributor listings, drop-in alternatives, and practical design notes not found in the manufacturer datasheet. Pricing references are as of 2026-09-04.

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K4RHE086VB-BCWM

K4RHE086VB-BCWM - 24Gb DDR5 5600Mbps DRAM | Samsung

The Samsung K4RHE086VB-BCWM is a 24Gb DDR5 SDRAM memory chip organized as 2G x 8, operating at 5600 Mbps data rate from a 1.1V supply in an 82-ball FBGA package. DDR5 SDRAM (Double Data Rate 5 synchronous dynamic random-access memory) is the fifth generation of JEDEC-defined DDR memory, sitting at the top of the DRAM hierarchy that spans DDR3, DDR4, and DDR5 generations. Compared with DDR4, DDR5 doubles the bank groups, moves the power management onto the DIMM or module, and delivers roughly 30% greater power efficiency, making it the dominant memory class for servers and premium computing platforms. Key features of this device include the 24Gb density per die, a 2G x 8 organization suited to wide server memory subsystems, and a 5600 Mbps pin speed that supports DDR5-4400/4800/5600 class memory controllers. Samsung specifies a 1.1V core supply in line with the DDR5 standard, reducing per-bit energy versus the 1.2V of DDR4. Architecturally, the K4RHE086VB-BCWM belongs to Samsung's DDR5 DRAM family using advanced process technology with on-die ECC and other DDR5 reliability features. The 82-ball FBGA (Fine-Pitch Ball Grid Array) surface-mount package provides low inductance signal paths needed for multi-gigabit operation. Typical applications include data center server DIMMs, premium desktop PCs, professional workstations, and industrial systems requiring long-term memory availability. Design consideration: memory controllers must be configured for the 24Gb density and x8 organization; BIOS or memory-training firmware must support this density, as some older controllers cap out at 16Gb per die. This page synthesizes distributor stock, drop-in family alternatives, and practical integration notes not found on the manufacturer product page.

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K4RHE165VB-BCWM

K4RHE165VB-BCWM - 24Gb DDR5 5600Mbps DRAM | Samsung

The Samsung K4RHE165VB-BCWM is a 24Gb DDR5 SDRAM component organized as 1G x 16, operating at 5600 Mbps data rate from a 1.1V supply, packaged in a 106-ball FBGA. It is Samsung's next-generation DRAM building block for DDR5 memory modules and high-performance computing systems where bandwidth and power efficiency are critical. DDR5 SDRAM (Double Data Rate 5 synchronous dynamic random-access memory) is the fifth generation of JEDEC-defined DDR DRAM. In the memory hierarchy, it sits within the broader family: DDR5 SDRAM -> DRAM -> volatile semiconductor memory -> memory IC. Compared with DDR4, DDR5 delivers roughly 30% better power efficiency, moves the power management onto the module via a PMIC, and splits each DIMM into two independent 32-bit (or 40-bit with ECC) subchannels to improve concurrency and effective bandwidth. Key features of this part include its 24 Gb density per die - among the largest monolithic DDR5 densities in volume production - a 16-bit wide data interface organized as 1G x 16, and a 5600 Mbps/pin data rate. The 1.1V core supply lowers dynamic power versus DDR4's 1.2V, while on-die termination, on-die ECC (as defined for DDR5), and bank-group architecture sustain signal integrity at speed. Technically, the die uses Samsung's advanced DRAM process with a fine-pitched array to achieve 24Gb in the 106-ball FBGA footprint shared with lower-density DDR5 dies. The x16 organization suits applications needing moderate width per device, and the BCWM speed/temperature grade supports commercial 0 to 85 C operation. Typical applications include next-generation DDR5 UDIMM, SODIMM and RDIMM modules, client and server platforms, gaming and workstation PCs, and AI/HPC memory subsystems where per-die density maximizes capacity per module. When designing with this component, respect DDR5 routing rules: fly-by command/address topology, matched-length data strobes, and the requirement for the module's on-board PMIC (5V auxiliary input, 1.1V VDD rails). This page synthesizes distributor stock, drop-in alternatives, and design notes not found in the manufacturer datasheet.

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K4S161622H-TC60

K4S161622H-TC60 - 16Mb SDRAM 1Mx16 LVTTL TSOP2-50 | Samsung

The Samsung Semiconductor K4S161622H-TC60 is a 16-megabit H-die Synchronous DRAM (SDRAM) organized as 1M words x 16 bits across 2 internal banks, delivered in a 50-pin TSOP2 (PDSO50, 0.80 mm pitch) surface-mount package. It uses LVTTL interface levels and operates from a single 3.3 V supply (3.0 V min / 3.6 V max), with the -TC60 speed grade supporting a 60 ns / 167 MHz class access window per the Samsung H-die specification family. A Synchronous DRAM is a dynamic random-access memory whose read, write, and refresh operations are synchronized to a system clock, allowing burst-mode transfers and pipelined access. SDRAM sits in the memory IC hierarchy above asynchronous DRAM and below modern DDR/DDR2/DDR3 SDRAM, and remains relevant for legacy industrial controllers, set-top boxes, networking line cards, and embedded designs where the host MCU/ASIC predates DDR support. The 2-bank/2K-refresh architecture used by the K4S161622H family delivers the standard 2K refresh cycles per 32 ms while keeping command decoding simple for older memory controllers. Key features include the 1Mx16 x 2-bank organization providing 16 Mb of storage with a 16-bit external data bus, LVTTL-compatible I/O for direct connection to 3.3 V ASICs and MCUs, a 50-pin TSOP2 outline suitable for socketed or hand-soldered legacy boards, and CMOS low-power operation. The -TC60 suffix denotes a commercial temperature range and the 60 speed grade in Samsung's H-die SDRAM nomenclature (sibling speed grades include -TC55, -TC70, -TC80, -TC10). Architecturally, the K4S161622H implements a pipelined multi-bank structure with on-chip refresh counter, RAS/CAS addressing, and programmable burst length, giving it the deterministic timing required by 1990s-2000s era CPUs, DSPs, and graphics controllers. Its 16-bit wide data interface simplifies parity/ECC schemes and matches the external bus of many legacy processors. Typical applications include industrial control boards, embedded networking equipment, legacy printer and display controllers, factory automation modules, and consumer electronics designs that retain SDRAM-compatible controllers. The wide 16-bit data path also suits display frame buffers and DSP working memory. When designing with this device, ensure the controller supports 2-bank LVTTL SDRAM with 4096-cycle / 64 ms refresh, route CLK, CKE, and CS with matched impedance, and bulk-decouple the 3.3 V rail near the device. Verify the speed grade against your target clock frequency to avoid tRCD/tRP violations. This page synthesizes distributor pricing, drop-in Samsung speed-grade alternatives, and practical legacy-design notes not collected in the original Samsung datasheet.

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K4S281632F-TC75

K4S281632F-TC75 - 128Mb F-die SDRAM 8Mx16 TSOP-54 | Samsung

The Samsung Semiconductor K4S281632F-TC75 is a 128 Mb F-die CMOS Synchronous DRAM organized as 8M words x 16 bits, housed in a 54-pin TSOP-II (Type II) package. It operates from a single 3.3 V supply (VDD/VDDQ = 3.3 V), supports a 7.5 ns clock period (-TC75 speed grade), and is fully synchronous to the positive edge of the system clock with internal pipeline architecture that delivers high bandwidth and low latency for cost-sensitive embedded designs. A Synchronous DRAM (SDRAM) is a type of dynamic random-access memory that adds a separate clock signal to coordinate data I/O on the rising edge, eliminating the asynchronous timing constraints of earlier FPM/EDO DRAM. SDRAM sits in the memory hierarchy between bulk storage (NAND flash, HDD) and CPU registers, and 128Mb-class parts like the K4S281632F-TC75 historically populated main memory of embedded systems, set-top boxes, networking line cards, printers, and industrial controllers throughout the 2000s before being superseded by DDR, DDR2 and Mobile SDRAM/LPDDR generations. Key features of the K4S281632F-TC75 include dual-bank architecture (2 banks selectable via BA0), programmable CAS Latency (CL = 2 or 3), programmable Burst Length (1, 2, 4, 8, full page), Auto-Refresh and Self-Refresh modes, LVTTL-compatible I/O, and a 64 ms refresh interval distributed across 4K refresh cycles. The 16-bit data bus and on-chip burst counter simplify glue-less connection to 16/32-bit microprocessors and ASICs. Internally, the die uses Samsung's F-die 0.13 nm-class process node and a 2-bit prefetch architecture (later generations would migrate to 4-bit prefetch with DDR). Row address is 12 bits (A0-A11) and column address is 8 bits (A0-A7) multiplexed on the same pins, with /RAS, /CAS, /WE, and /CS providing the standard SDRAM command set. The TSOP-II 54-pin form factor is the industry-standard footprint for 128 Mb x16 SDRAM, allowing board-level replacement of similar Micron, Hynix and Qimonda parts. Typical applications for the K4S281632F-TC75 include main working memory in legacy embedded CPU boards (e.g., ARM7/ARM9 SBCs, PowerQUICC), graphics frame buffers, network switch control planes, point-of-sale terminals, automotive infotainment pre-DDR3, and other cost-optimized commercial or industrial designs where supply voltages below 2.5 V are not required. The part remains in demand today for maintenance, repair and legacy OEM replacements. A critical design consideration is the 3.3 V supply requirement: most modern systems use 1.8 V DDR1 or 1.5 V/1.35 V DDR2/3, so the K4S281632F-TC75 cannot be retrofitted to those without a level translator. Always honor the 200 us power-on initialization sequence and the minimum 200 us wait after a CKE rise before issuing the LOAD MODE REGISTER command. This page synthesizes distributor pricing, drop-in alternatives from Samsung and competing SDRAM vendors, and practical design notes not found in a single Samsung datasheet, providing engineers with everything needed to qualify, source, and design with the K4S281632F-TC75.

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K4S561633F-ZL75

K4S561633F-ZL75 - 256Mb Mobile SDRAM, 4x16Mx16, 133MHz, 54-BGA

The Samsung K4S561633F-ZL75 is a 268,435,456-bit (256Mb) synchronous high-data-rate Dynamic RAM organized as 4 banks x 4,196,304 words x 16 bits, fabricated on Samsung's high-performance CMOS process. Housed in a 54-ball Fine-Pitch Ball Grid Array (FBGA / TFBGA / 54-BOC) package, it operates from a single 3.3V supply, supports LVCMOS-compatible I/O, and delivers 133 MHz (7.5 ns / CL3) synchronous operation with burst lengths of 1, 2, 4, 8, and full-page, in either sequential or interleave burst mode. The ZL75 speed grade corresponds to a 133 MHz clock with CAS Latency 3. A Synchronous DRAM (SDRAM) is a type of volatile dynamic random-access memory that synchronizes all read/write operations to a free-running system clock, enabling pipelined multi-bank operation. SDRAM occupies the position: DRAM -> volatile memory -> semiconductor memory. By dividing the storage array into four independently addressable banks, SDRAM overlaps precharge/activate phases of one bank with read/write accesses on another, doubling sustained throughput compared with Fast-Page Mode DRAM at the same clock rate. Key features of this part include four-bank operation, programmable CAS latency (2 or 3), programmable burst length and burst type via the Mode Register Set (MRS) cycle, automatic precharge, and self-refresh. The interface is LVCMOS-compatible with multiplexed address and uses a 3.3V single supply, simplifying integration into mobile platforms where low voltage and compact packaging are critical. Samsung's CMOS fabrication delivers the speed-grade 7.5 ns (133 MHz) operation while keeping active current modest. Typical applications include 3G/feature-phone baseband working memory, mobile handset main memory, PDA memory expansion, portable media player DRAM buffers, and other compact consumer/embedded designs that need 32 MB of 16-bit-wide RAM on a low-pin-count footprint. The 54-ball FBGA package is well suited to high-density mobile layouts where board height and routing escape are constrained. When designing with this device, follow the JEDEC SDRAM initialization sequence (precharge-all, eight auto-refresh cycles, then MRS load) and place the 0.1 uF VDD/VSSQ decoupling caps as close to the balls as possible. Confirm the ZL75 (7.5 ns / 133 MHz) speed grade matches the controller's clock and CAS latency; the part is not pin-compatible with the faster 166 MHz -Z1L75 / -ZL1H variants or with the older 1Mx16 organization.

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K4S561633FZN75

K4S561633FZN75 - 256Mb Mobile SDRAM 4x16Mx16 133MHz FBGA | Samsung

The Samsung K4S561633F-ZN75 is a 268,435,456-bit synchronous Mobile SDRAM organized as 4 banks x 4,196,304 words x 16 bits, fabricated with Samsung's high-performance CMOS technology and housed in a 54-ball FBGA (54BOC) package. It operates at a 133 MHz clock frequency with a 3.0 V supply, supports LVCMOS-compatible inputs, and is offered in a Pb-free (lead-free) variant under the '-ZN75' ordering code suffix, indicating commercial temperature grade and 133 MHz speed bin. What is Mobile SDRAM? A Mobile SDRAM (Synchronous Dynamic Random-Access Memory) is a low-power variant of standard SDRAM optimized for portable and battery-powered applications. It adds features such as partial-array self-refresh (PASR), temperature-compensated self-refresh (TCSR), and a deep power-down mode that dramatically reduce standby current compared with conventional SDRAM. Within the broader memory taxonomy, Mobile SDRAM sits below LPDDR/DDR but above asynchronous SRAM in performance-per-watt, and is fabricated in the same CMOS process nodes used for commodity DRAM. The 54BOC FBGA package gives a compact 8 mm x 10 mm footprint suitable for handheld product designs. Key features of the K4S561633FZN75 include a fully synchronous operation referenced to a positive-edge clock, programmable CAS latency of 2 or 3, programmable burst length of 1, 2, 4, 8 or full page, and auto-precharge. The 4-bank architecture enables interleaved operations that hide precharge latency, while the LVCMOS interface simplifies connection to mobile ASICs, baseband processors, and application processors from the 2003-2008 generation. The device supports both Auto-Refresh and Self-Refresh modes and includes a power-down mode for additional energy savings. The K4S561633FZN75 is implemented using Samsung's high-performance CMOS process and a twin-cell storage architecture, delivering high data rates at moderate power consumption. Synchronous design allows precise cycle control with the system clock and I/O transactions are possible on every clock cycle, which simplifies controller logic compared with asynchronous DRAMs. Typical applications include mobile phone image buffers, portable media player working memory, PDA / handheld computing buffers, digital camera burst-frame storage, and GPS navigator working memory. The wide operating voltage and low-power modes also make it suitable for industrial handheld terminals and early-generation smart-phone designs. When designing with this part, ensure that the controller drives CK, CKE, CS, RAS, CAS, WE, BA0/BA1, A0-A12, DQ0-DQ15, DQM, and the ZN75-spec power pins according to the datasheet's AC timing table. Decoupling must use 100 nF plus 10 uF per rail within 5 mm of the BGA balls to maintain signal integrity at 133 MHz. This page consolidates distributor pricing, JEDEC-standard Mobile SDRAM cross-references, and design notes specific to 54BOC FBGA layouts, offering information not typically compiled on a single manufacturer datasheet page.

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K4S641632H-UC75

K4S641632H-UC75 - 64Mb H-die SDRAM 1M x 16 x 4 Banks | Samsung

The Samsung K4S641632H-UC75 is a 64Mb H-die synchronous DRAM (SDRAM) organized as 1M x 16 bits x 4 banks, fabricated with Samsung's high-performance CMOS technology. Housed in a 54-pin TSOP-II Pb-free (RoHS compliant) package, it operates at 133 MHz clock frequency with LVCMOS-compatible inputs and outputs. The device uses a 3.3 V supply, multiplexed address bus, and supports four-bank operation with MRS/EMRS cycles for CAS latency, burst length, and burst type programming. What is SDRAM? Synchronous DRAM is a dynamic random-access memory that synchronizes data transfers with the rising edge of a system clock, enabling higher throughput than asynchronous DRAM. Within the memory hierarchy, SDRAM sits above SRAM and below cache as the main system memory for embedded systems, networking equipment, and consumer electronics. SDRAM evolved into subsequent generations including DDR, DDR2, DDR3, DDR4, and DDR5 SDRAM; the K4S641632H is a first-generation SDR (Single Data Rate) SDRAM. It uses a four-bank architecture to improve throughput by allowing one bank to precharge while another is being accessed. Key features of the K4S641632H-UC75 include a maximum operating current of 135 mA, commercial operating temperature range of 0C to +70C, full-page burst capability, and sequential/interleave burst modes. The 1M x 16 organization is well-suited for 16-bit data buses in legacy embedded designs, while the four-bank architecture supports concurrent activation of up to four rows for higher bandwidth. LVCMOS interface simplifies connection to standard logic-level controllers without level shifters. In terms of architecture, the K4S641632H-UC75 uses a pipelined multi-bank internal structure that supports auto-refresh and self-refresh modes for data retention. The address bus is multiplexed into row and column addresses via RAS#, CAS#, and WE# control lines, reducing pin count and enabling high-density integration in the 54-pin TSOP-II form factor. Typical applications include networking routers, set-top boxes, industrial control equipment, embedded computing platforms, legacy computer main memory, and graphics frame buffers. The 16-bit-wide data bus is a natural fit for embedded processors and DSPs that expect half-word memory accesses. When designing with this device, ensure proper decoupling with 0.1 uF and 0.01 uF capacitors placed close to VDD/VSS pins, follow the standard SDRAM initialization sequence (PRECHARGE -> NOP -> MRS), and respect tRCD/tRP/tRFC timing parameters per the datasheet. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.

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K4S641632K-UC75

K4S641632K-UC75 - 64Mb SDRAM 4Mx16 3.3V 54-TSOP II | Samsung

The Samsung K4S641632K-UC75 is a 67,108,864-bit synchronous high-data-rate Dynamic RAM organized as 4 banks x 1,048,576 words by 16 bits (4Mx16), fabricated on Samsung's high-performance CMOS process. The device operates from a single 3.3V supply, supports a clock frequency up to 133 MHz (the -UC75 speed grade), and is housed in a 54-pin TSOP-II surface-mount outline. An SDRAM (Synchronous Dynamic Random-Access Memory) is a volatile memory class that synchronizes data transfers to a system clock, enabling burst-oriented read/write cycles. SDRAM sits within the broader hierarchy of memory ICs -> DRAM -> volatile memory -> semiconductor, and is the predecessor to subsequent generations such as DDR, DDR2 and DDR3. The K4S641632K-UC75 is a member of the legacy SDR (Single Data Rate) SDRAM family that dominated main memory from the late 1990s through the early 2000s and remains in use today for legacy industrial, networking and embedded designs. Key features of the K4S641632K-UC75 include a 4-bank architecture with 4096 refresh cycles, programmable CAS Latency (CL=2 or CL=3), a 16-bit data bus, and a 12-bit row address / 8-bit column address multiplexed interface. Auto-refresh and self-refresh modes are supported, along with power-down and clock-suspend functions for reduced quiescent current. The 54-pin TSOP-II package measures approximately 10.16 mm x 22.22 mm with a 0.8 mm pitch and is JEDEC-standard, allowing direct substitution with pin-compatible SDRAMs from Samsung (K-die family), Micron, ISSI and Alliance Memory. The device is rated for commercial temperature range (0°C to +70°C). Typical applications include embedded systems using legacy CPUs (e.g., PowerPC, ARM7/ARM9, MIPS, SH-3), networking line cards, industrial control mainboards, set-top box memory, and printer/copier controller boards that still require 3.3V SDR SDRAM. Many industrial designs retain SDR SDRAM today because of long lifecycle, easy sourcing, and full JEDEC pinout compatibility across vendors. When designing with the K4S641632K-UC75, observe JEDEC SDRAM timing parameters (tRCD, tRP, tRFC, tMRD). A 0.1 uF decoupling capacitor must be placed close to each VDD/VSS pair, and the clock, CKE, and chip-enable signals must be cleanly routed to avoid glitches that can corrupt state. Banks must be properly precharged before issuing new commands. This page synthesizes distributor pricing, drop-in JEDEC alternatives from the same Samsung K-die family, and practical PCB-layout guidance not consolidated in any single manufacturer datasheet, providing a single source for engineers evaluating or replacing the K4S641632K-UC75.

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K6F1616U6A-EF55T

K6F1616U6A-EF55T - 16Mbit Async SRAM 55ns 48-TFBGA | Samsung

The Samsung Semiconductor K6F1616U6A-EF55T is a 16Mbit asynchronous static RAM (SRAM) organized as 1M x16 bits, operating from a single 2.7V to 3.3V supply with a 55ns access time, housed in a 48-ball TFBGA (7.5 x 9.5 mm) package with Tape and Reel delivery. An asynchronous SRAM is a type of volatile semiconductor memory that stores each bit in a bistable latch circuit and does not require a clock signal or periodic refresh, unlike DRAM. Within the memory IC hierarchy, static RAM sits alongside DRAM and non-volatile memory as a parallel-interface memory class, favored where deterministic, low-latency read and write cycles matter more than raw density. Because there is no refresh circuitry, controller design is simplified to standard address, data, and chip-enable strobes. Key features of the K6F1616U6A family include super-low-power full-CMOS construction, a wide 2.7V to 3.3V operating range suited to battery-powered systems, a parallel 16-bit wide data bus, and a compact 48-TFBGA footprint that conserves board area versus legacy TSOP SRAM packages. The 55ns speed grade supports zero-wait-state access from mid-range microcontrollers and DSPs. Technically, the device uses a six-transistor full-CMOS memory cell, which yields near-zero static current in standby when deselected and eliminates refresh overhead entirely. Data is retained as long as supply voltage remains in range, and access is controlled via chip enable, output enable, and write enable signals in a conventional asynchronous SRAM timing scheme. Typical applications include battery-powered portable instrumentation, industrial control panels requiring code or data scratchpad memory, network equipment line-card buffers, and legacy embedded designs replacing older SRAM generations such as the K6X0808/K6X1008 families. Design consideration: use 55ns access timing conservatively - add address-valid setup margin in controller timing loops, and keep the TFBGA land pattern per the datasheet ball map since ball-grid escape routing constrains trace length matching. This page synthesizes distributor availability data, drop-in alternative analysis, and practical design notes not found in the manufacturer datasheet, with pricing freshness as of 2026-09-01.

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K6F2016U4D-FF70T00

K6F2016U4D-FF70T00 - 2Mbit Async SRAM 70ns 48-FBGA | Samsung

The Samsung K6F2016U4D-FF70T00 is a 2Mbit asynchronous full CMOS static RAM (SRAM) organized as 128K x 16 bits, operating from a 2.7V to 3.3V supply with a 70ns access time (tAA), packaged in a 48-ball FBGA (6x7 mm) chip-scale package. An asynchronous SRAM is a type of random-access memory that does not require a clock signal for read or write operations; data is accessed directly by applying an address on the address bus and activating the chip enable (CE), output enable (OE), and write enable (WE) control pins. Within the memory IC hierarchy, it belongs to the solid-state SRAM class, sitting above DRAM in speed determinism and below synchronous SRAM in density, and is widely used as a power-management-level companion memory for microprocessors and DSPs. Key features of the K6F2016U4D family include super-low-power full CMOS process technology, a wide 2.7V to 3.3V operating voltage range, industrial temperature support, and a compact 48-ball chip-scale package for flexible system design. The 16-bit organization allows word-wide data paths that simplify interfacing to 16-bit processors without external bus-width glue logic. Technically, the device is fabricated on Samsung's advanced full CMOS process, which minimizes standby and operating current. Revision history of the family datasheet notes parameter adjustments such as tWP set to 50ns for 70ns-grade product, indicating active datasheet maintenance. Speed grades of 55ns and 70ns are offered under the FF55 and FF70 suffixes. Typical applications include battery-powered portable instruments, industrial control systems, network equipment buffering, and as code/data scratch memory for FPGAs and microcontrollers that require deterministic, zero-wait-state access. Designers should verify that the 70ns access time meets the system bus timing margin, and should properly terminate unused balls per datasheet guidance. Because the part is offered in a BGA package, X-ray inspection capability is recommended for incoming quality control and rework planning. This page synthesizes distributor availability data, datasheet-derived specifications, drop-in alternative analysis, and design guidance not found in the manufacturer datasheet alone.

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K6F4016U6E-EF55

K6F4016U6E-EF55 - 256Kx16 4Mb Low-Power SRAM 55ns | Samsung

The Samsung K6F4016U6E-EF55 is a 256K x 16-bit (4-Mbit) ultra-low-power, low-voltage, full-CMOS static RAM organized as 4,194,304 bits with a 16-bit data I/O interface, available in a 48-ball Chip Scale Package (CSP/BGA) and access times of 55 ns and 70 ns. It operates from a single 2.7 V to 3.3 V supply, supports an industrial temperature range, and is fabricated on Samsung's advanced full-CMOS process technology for low active and standby current consumption. A Static RAM (SRAM) is a type of volatile semiconductor memory that stores each bit in a pair of cross-coupled inverters (a flip-flop) rather than a capacitor, giving it infinite read/write endurance and zero refresh requirement. The K6F4016U6E-EF55 belongs to the asynchronous SRAM category, where read/write operations are controlled by the chip enable (/CE), write enable (/WE), and output enable (/OE) signals without an internal clock. SRAM sits in the memory hierarchy between DRAM (higher density but needs refresh) and register files (faster but lower density), and is preferred in systems where deterministic access time, low power, and high reliability outweigh density cost. Key features include a wide 2.7 V to 3.3 V Vcc operating range, low standby current typical of full-CMOS 6T cell design, three-state common I/O, fully static operation requiring no clock or refresh, and CMOS- and TTL-compatible I/O levels. Byte-wise control via upper-byte (/UB) and lower-byte (/LB) signals enables 8-bit and 16-bit access on the same device, while the 48-CSP package offers a small footprint suited to space-constrained handheld and embedded boards. Typical applications include handheld and battery-operated terminals, industrial controllers and PLCs, metering and instrumentation data buffers, networking line cards, automotive infotainment buffers, and other embedded designs where 4 Mbit of non-volatile-friendly scratch memory is required. Designers choose the trio: 55 ns access makes the device compatible with most low-to-mid-speed microcontrollers without wait generation, and the wide 2.7 V to 3.3 V range allows direct connection to a single Li-ion or 3.3 V regulated rail. When designing with this device, observe the derating for output loading (lumped vs distributed capacitive loads) and follow the recommended decoupling scheme. Place a 0.1 uF ceramic bypass capacitor as close as possible to the Vcc ball, and add a bulk 1 uF to 10 uF capacitor if multiple SRAMs share the supply rail. The chip-scale package also requires IPC-7351-compliant land pattern with NSMD pads for reliable assembly. This page synthesizes distributor pricing, drop-in alternates, and practical design considerations that are not present in the bare Samsung datasheet, including a side-by-side same-family comparison and cross-brand SRAM substitutes.

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K6T0808C1D-DB55

K6T0808C1D-DB55 - 32Kx8 Low Power CMOS SRAM | Samsung

The Samsung K6T0808C1D-DB55 is a 32K x 8 bit (256 Kbit) Low Power CMOS Static RAM fabricated on Samsung's advanced CMOS process technology, housed in a 28-pin TSOP1F (Type I, forward) surface-mount package with a 70 ns access time grade and an industrial operating temperature range from -40 C to +85 C. A Static RAM (SRAM) is a type of volatile semiconductor memory that retains stored data as long as power is applied, without requiring periodic refresh cycles. SRAM sits in the broader memory hierarchy above DRAM because it offers faster access and simpler control logic, but at higher cost per bit. The 32K x 8 organization yields 32,768 addressable bytes accessed through 15 address lines and 8 bidirectional data lines, which is the classic 28-pin asynchronous SRAM pinout used for nearly three decades in routers, printers, industrial controllers, and legacy embedded systems. Key features include a 70 ns maximum access time (TA = 70 ns grade), low standby current of typically a few microamperes (data-retention mode), single 5 V power supply operation, fully static operation requiring no clock or refresh, TTL-compatible I/O levels, and three-state output drivers that allow direct bus connection. The -DB55 ordering suffix encodes the package style (TSOP1F), the 70 ns speed grade, and the -40 C to +85 C industrial temperature range. The K6T0808C1D family is fabricated with Samsung's high-density CMOS cell design and incorporates on-chip bias generation for stable read/write margins across the full temperature range. The architecture supports common SRAM control signals including Chip Enable (CE), Output Enable (OE), and Write Enable (WE), with byte-wide data access through eight bidirectional DQ pins, providing compatibility with 8-bit microcontrollers, DSPs, and legacy CPU buses. Typical applications include router and switch packet buffers, industrial PLC working memory, printer image data buffers, barcode scanner local memory, instrumentation data loggers, legacy 8-bit and 16-bit microcontroller expansion memory, and battery-backed configuration parameter storage. The wide industrial temperature window also makes it suitable for outdoor telecom equipment and automotive infotainment subsystems. When designing with this device, decouple VCC with a 0.1 uF ceramic capacitor placed within 5 mm of the supply pin and add a 10 uF bulk tantalum or ceramic capacitor on the same rail. Tie unused input pins such as CE, OE, or WE to a defined logic level to avoid spurious read/write cycles from floating CMOS inputs. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.

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K6T0808C1D-DB70

K6T0808C1D-DB70 - 256Kbit (32Kx8) CMOS SRAM 70ns DIP-28 | Samsung

The Samsung Semiconductor K6T0808C1D-DB70 is a 256Kbit (32K x 8) low-power CMOS static RAM organized as 32,768 words by 8 bits, with a 70 ns access time, housed in a 28-pin through-hole DIP (DIP-28, 'DB' package code) for commercial-grade (0C to +70C) operation. The K6T0808C1D family consists of asynchronous, byte-wide static RAM cells fabricated on Samsung's advanced CMOS process technology. A static RAM (SRAM) is a type of volatile semiconductor memory that retains data bits as long as power is supplied, without refresh cycles, and uses a bistable latch (cross-coupled inverters) per cell. SRAM occupies the latency tier between faster register files and slower dynamic RAM (DRAM), making it the standard choice for cache memories, look-up tables, FIFOs, and embedded scratch-pad memory in microcontrollers and ASICs. The K6T0808C1D sits within the broader memory taxonomy: SRAM -> volatile memory -> semiconductor memory -> integrated circuit. Key features of the K6T0808C1D-DB70 include a single 4.5 V to 5.5 V power supply, typical operating current of 60 mA, and a standby current of 15 uA at full data retention. The device offers a TTL-compatible parallel interface with three-state outputs, an active-low chip enable (CE1) and active-high chip enable (CE2) for memory expansion, an active-low output enable (OE) for bus arbitration, and an active-low write enable (WE) for read/write control. The DB package denotes the 600-mil wide DIP-28 form factor with through-hole leads, which simplifies prototype bring-up and is often used as a one-for-one retrofit for legacy 32Kx8 SRAM sockets. The K6T0808C1D architecture uses a 6-transistor (6T) full CMOS memory cell, which delivers low standby current, fast access, and high noise immunity relative to older NMOS designs. The -DB70 speed code indicates a 70 ns address access time (tAA) and supports 55 ns and 70 ns grades across the family. The 'C' suffix in the family name signifies the commercial 0C to +70C temperature range, while the 'D' indicates DIP packaging. Typical applications include legacy industrial controller scratch-pad memory, instrument data buffers, programmable logic controller (PLC) bit/byte storage, point-of-sale terminal transaction buffers, telecom line-card buffer memory, and retrofit of older 32Kx8 SRAM sockets in vintage computer or test equipment boards. The DIP-28 package also makes the K6T0808C1D-DB70 popular for educational, hobbyist, and breadboard-based designs. When designing with this SRAM, observe bus contention rules: never assert WE and OE simultaneously while the output drivers are enabled. Add 0.1 uF decoupling close to each VCC pin and a bulk 10 uF capacitor on the supply rail to suppress switching transients on read/write cycles. This page synthesizes distributor availability, drop-in pin-compatible alternatives, and practical design considerations that go beyond the manufacturer datasheet.

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K6T1008C2E-GB70

K6T1008C2E-GB70 - 128Kx8 SRAM, 70ns, 5V CMOS | Samsung

The Samsung K6T1008C2E-GB70 is a 128K x 8-bit Low Power CMOS Asynchronous Static RAM (SRAM) organized as 1 Mbit of memory with a 70 ns access time, packaged in a 32-pin Small Outline Package (SOP-32). It operates from a single 4.5 V to 5.5 V supply, with 50 mA typical operating current and CMOS-compatible standby current well under 1 mA. The device is fabricated on Samsung's low-power CMOS process that uses six-transistor (6T) memory cells with full CMOS periphery, eliminating the need for external refresh. An SRAM (Static Random-Access Memory) is a type of volatile semiconductor memory that stores each bit in a bistable latch, retaining data as long as power is applied without any refresh cycles. SRAMs are positioned in the memory hierarchy between high-density DRAM (which requires refresh) and fast register files (which are too small for general storage). Within the broader taxonomy, SRAM is a member of the volatile memory IC family, which in turn belongs to memory and storage semiconductors. The K6T1008C2E is part of Samsung's legacy K6T family of asynchronous SRAMs, which has been widely second-sourced and is considered an industry-standard pinout. Key features of the K6T1008C2E-GB70 include fully static operation requiring no clock or refresh, three-state common I/O, TTL-compatible inputs and outputs, and a single Chip Enable (CE) pin plus Output Enable (OE) for bus control. The 70 ns access time (tAA) makes it suitable for moderate-speed microcontroller and embedded processor bus interfaces. The SOP-32 surface-mount package provides a low-profile footprint compatible with standard 32-SOIC land patterns, simplifying PCB layout. The device is offered in commercial (C) and industrial (I) temperature grades, with the -GB suffix denoting SOP-32 package, lead-free, and 70 ns speed bin. Typical applications include industrial controllers, firmware boot memory, embedded data logging, computing modules, and replacement sourcing for obsolete systems. The wide 5 V supply range and TTL compatibility make it ideal for legacy 5 V microcontrollers and 8/16-bit processor buses where modern synchronous SRAMs are not required. The asynchronous interface simplifies the memory controller design, eliminating the need for clock-aligned control logic. When designing with this part, verify the tAA timing budget against the host processor's memory cycle time. At 70 ns access time, the part is best suited for host buses running at 14 MHz or lower. For higher performance buses, consider a 55 ns variant or move to a synchronous SRAM. Decoupling with a 0.1 µF ceramic capacitor placed within 5 mm of the VCC pin is recommended for stable operation.

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K6X1008C2D-BF55

K6X1008C2D-BF55 - 128Kx8 Low Power CMOS SRAM | Samsung

The Samsung K6X1008C2D-BF55 is a 128K x 8 bit (1 Mbit) low-power CMOS asynchronous Static RAM housed in a 32-pin SOP-525 surface-mount form factor. It operates from a single 5 V supply and offers a 55 ns access time, targeting battery-backed and industrial embedded systems where non-volatile storage is unavailable or undesirable. The device uses six-transistor (6T) CMOS memory cells with a fully static interface that requires no clock or refresh. A Static RAM (SRAM) is a type of random-access memory in which each bit is stored in a latch made of cross-coupled inverters, allowing data to be retained as long as power is applied without the periodic refresh cycles demanded by DRAM. In the broader taxonomy, SRAM sits under volatile memory, which itself belongs to the memory IC hierarchy under integrated circuits. The K6X1008C2D-BF55 uses this architecture to deliver fast, deterministic access times suited to control-plane rather than bulk-storage workloads. Key features include a 55 ns access time, low operating current of approximately 30 mA, low standby current, and full CMOS input/output compatibility with TTL-level thresholds. The wide 32-pin SOP footprint supports easy hand-soldering and inspection for low-volume industrial assemblies and legacy retrofits. The part supports standard asynchronous SRAM control signals including /CE (Chip Enable), /OE (Output Enable), and /WE (Write Enable), enabling a glue-less interface to most microcontrollers and microprocessors without external glue logic. The device architecture relies on a conventional six-transistor memory cell array organized as 131,072 bytes, addressable through 17 address lines and an 8-bit bidirectional data bus. A single 5 V rail powers both the array and the I/O, and internal address latches keep the array stable after the falling edge of /CE, simplifying read-modify-write operations. This asynchronous design avoids the timing-sensitive clock trees found in synchronous SRAMs, allowing direct 8-bit microcontroller attachment without bus-turnaround sequence management. Typical applications include industrial controllers, embedded firmware boot buffers, data loggers, point-of-sale terminals, and legacy computing modules. The K6X1008C2D-BF55 also fits well in PLCs, instrumentation data buffers, and replacement-sourcing scenarios where Samsung's mature K6X1008C2D family is the incumbent part. When designing with this device, ensure /CE, /OE, and /WE timing follows the asynchronous SRAM protocol specified in the manufacturer datasheet to avoid bus collisions during read-modify-write cycles. Decoupling the 5 V supply close to the VCC pins with a 0.1 uF ceramic capacitor is strongly recommended. This page synthesizes distributor pricing, drop-in alternatives from the K6X1008C2D family, and practical design notes not found in the original Samsung datasheet, supporting engineers sourcing a 5 V parallel SRAM today.

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K6X1008C2D-BF70

K6X1008C2D-BF70 - 128Kx8 70ns Low Power CMOS SRAM | Samsung

The Samsung K6X1008C2D-BF70 is a 128Kx8-bit (1 Mbit) asynchronous low-power CMOS Static RAM organized as 131,072 words by 8 bits, providing 70 ns access time in a 32-pin SOP (PDSO32) surface-mount package. It operates from a single 5 V supply and supports full CMOS interfacing with standard TTL-compatible I/O levels. An SRAM (Static Random Access Memory) is a type of volatile semiconductor memory that stores each data bit in a bistable flip-flop cell made of cross-coupled CMOS inverters. Unlike DRAM, SRAM does not require periodic refresh, which simplifies system design and yields deterministic, very low-latency read/write cycles. SRAM is hierarchically positioned as volatile memory, sibling to DRAM and flip-flop based register files, and is typically used for caches, look-up tables, FIFOs, and boot/parameter storage in embedded systems. Key features of the K6X1008C2D-BF70 include 70 ns access time, fully static operation (no clock or refresh required), TTL-compatible I/O, low standby current, and three-state outputs for bus-sharing. The BF70 suffix denotes the 70 ns speed grade in the 32-SOP-525 commercial package with lead-free finish. Operating current (ICC) and CMOS standby current (ICC2) are characterized per the Samsung datasheet revision history. The device uses a six-transistor CMOS memory cell array with conventional address-decoded word-line drivers and sense amplifiers. The asynchronous interface provides a Chip Enable (CE), Write Enable (WE), and Output Enable (OE) control set, allowing the part to drop into industry-standard 128Kx8 SRAM sockets with no firmware changes. Typical applications include data storage in industrial controllers, firmware/parameter boot storage in embedded modules, data logging buffers, computing subsystems, replacement sourcing for legacy 128Kx8 SRAM, and telecommunications equipment. The 32-SOP footprint is convenient for board-level upgrades and last-time-buys. When designing with this part, derate access time budget for temperature and supply variation; place a 0.1 uF decoupling capacitor close to VCC and consider a bulk 1 uF to support read/write peaks. Confirm pinout against the BF70 variant SOP outline (32-SOP-525) rather than the TSOP1 reverse option, because the SOP and TSOP1 pin assignments are not identical. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in a single manufacturer datasheet view.

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K6F2016U4D-FF70T00 - 2Mbit Async SRAM 70ns 48-FBGA | Samsung

K6F4016U6E-EF55 - 256Kx16 4Mb Low-Power SRAM 55ns | Samsung

K6T0808C1D-DB55 - 32Kx8 Low Power CMOS SRAM | Samsung

K6T0808C1D-DB70 - 256Kbit (32Kx8) CMOS SRAM 70ns DIP-28 | Samsung

K6T1008C2E-GB70 - 128Kx8 SRAM, 70ns, 5V CMOS | Samsung

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K6X1008C2D-BF70 - 128Kx8 70ns Low Power CMOS SRAM | Samsung