K6F1616U6A-EF55T - 16Mbit Async SRAM 55ns 48-TFBGA | Samsung
部品番号: K6F1616U6A-EF55T ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $0 | $0.00 |
| 10 | $0 | $0.00 |
| 100 | $0 | $0.00 |
| 500 | $0 | $0.00 |
| 1,000 | $0 | $0.00 |
K6F1616U6A-EF55T 概要
An asynchronous SRAM is a type of volatile semiconductor memory that stores each bit in a bistable latch circuit and does not require a clock signal or periodic refresh, unlike DRAM. Within the memory IC hierarchy, static RAM sits alongside DRAM and non-volatile memory as a parallel-interface memory class, favored where deterministic, low-latency read and write cycles matter more than raw density. Because there is no refresh circuitry, controller design is simplified to standard address, data, and chip-enable strobes.
Key features of the K6F1616U6A family include super-low-power full-CMOS construction, a wide 2.7V to 3.3V operating range suited to battery-powered systems, a parallel 16-bit wide data bus, and a compact 48-TFBGA footprint that conserves board area versus legacy TSOP SRAM packages. The 55ns speed grade supports zero-wait-state access from mid-range microcontrollers and DSPs.
Technically, the device uses a six-transistor full-CMOS memory cell, which yields near-zero static current in standby when deselected and eliminates refresh overhead entirely. Data is retained as long as supply voltage remains in range, and access is controlled via chip enable, output enable, and write enable signals in a conventional asynchronous SRAM timing scheme.
Typical applications include battery-powered portable instrumentation, industrial control panels requiring code or data scratchpad memory, network equipment line-card buffers, and legacy embedded designs replacing older SRAM generations such as the K6X0808/K6X1008 families.
Design consideration: use 55ns access timing conservatively - add address-valid setup margin in controller timing loops, and keep the TFBGA land pattern per the datasheet ball map since ball-grid escape routing constrains trace length matching.
This page synthesizes distributor availability data, drop-in alternative analysis, and practical design notes not found in the manufacturer datasheet, with pricing freshness as of 2026-09-01.
ドロップイン代替品: K6F1616U6A-EF55T — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: K6F1616U6A-EF55T （同一形状・フットプリント） — 相違点: Memory Size, Organization, Package, Refresh Requirement.
クイック比較ツール — 並列比較する代替部品を選択:
K6F1616U6A-EF55
✅ ドロップイン📋 参考代替品（カタログ未掲載）
K6F1616U6A-EF55T 最大定格＆電気的特性
| メモリタイプ | SRAM - Asynchronous |
| メモリサイズ | 16 Mbit |
| メモリ構成 | 1M x 16 |
| インターフェース | Parallel |
| Access Time | 55 ns |
| Supply Voltage Range | 2.7 V to 3.3 V |
| Technology | Full CMOS Static RAM |
| パッケージ | 48-TFBGA (7.5 x 9.5 mm) |
| 実装タイプ | Surface Mount |
| Packaging | Tape & Reel (T suffix) |
| Clock Frequency | N/A (asynchronous, no clock required) |
| Refresh Requirement | None (static RAM) |
K6F1616U6A-EF55T 48-tfbga (7.5 x 9.5 mm) ピン配置ガイド
K6F1616U6A-EF55T (48-tfbga (7.5 x 9.5 mm) パッケージ) のピン配置。 このデジタルICには、GPIO、通信インターフェース (UART、SPI、I2C)、および電源ピンが含まれています。代替ピン機能と設定オプションについては、メーカーのデータシートを参照してください。組み込みシステム設計とPCBレイアウトに不可欠です。
詳細なピン配置データはありません: K6F1616U6A-EF55T.
詳細は データシート をご参照ください。
主な用途
K6F1616U6A-EF55T の用途: 6 件s: Battery-Powered Portable Instrumentation, Industrial Control and PLC Data Buffers, Legacy SRAM Replacement in Embedded Designs, Networking Line-Card Buffer Memory, Medical and Test Instrumentation Data Storage, FPGA Reference Design Scratchpad.
Battery-Powered Portable Instrumentation
The K6F1616U6A-EF55T is a strong fit for battery-powered instruments because Samsung designs the K6F1616U6A family as a super-low-power, low-voltage full-CMOS static RAM operating from 2.7V to 3.3V - directly compatible with a 3.0V lithium cell or 3.3V rail without a regulator stage. Its asynchronous architecture needs no clock or refresh, so a microcontroller can clock-gate the bus and drop the part into standby simply by deselecting chip enable. The 1M x16 organization supplies 2MB of fast scratchpad or data-logging memory with deterministic 55ns access. The 48-TFBGA (7.5 x 9.5 mm) footprint keeps handheld and portable PCBs compact.
おすすめ
Industrial Control and PLC Data Buffers
In PLCs, motor control panels, and factory automation controllers, the K6F1616U6A-EF55T provides 2MB of deterministic, zero-refresh working memory between the microprocessor and process I/O. The 55ns access time supports zero or single wait-state operation from industrial-grade MCUs and FPGAs, while the parallel 16-bit bus lets controllers move logged events and setpoint tables efficiently. Full-CMOS cells tolerate the wide temperature swings typical of factory floors without refresh-related data loss risk, and the wide 2.7V to 3.3V input range rides through supply sag on 3.3V industrial logic rails.
おすすめ
Legacy SRAM Replacement in Embedded Designs
Many legacy embedded designs were built around Samsung's K6X0808/K6X1008 TSOP SRAM families or other 16Mbit-class asynchronous SRAMs that are now in constrained supply. The K6F1616U6A-EF55T provides the same asynchronous, no-refresh interface paradigm in a modern low-voltage full-CMOS die, letting designers extend product life with a parameter-matched 1M x16, 55ns device. Migration typically requires only address/data remapping to the 48-TFBGA ball map and verification that the host tolerates the 2.7V to 3.3V range, since some older TSOP parts ran at 4.5V to 5.5V.
おすすめ
Networking Line-Card Buffer Memory
Network equipment such as switches, routers, and DSLAM line cards uses asynchronous SRAM for statistics counters, queuing tables, and control-plane buffers. The K6F1616U6A-EF55T's 55ns access and 1M x16 organization suit 16-bit-wide counter and descriptor tables that must be read-modify-written quickly without the added controller complexity of synchronous SRAM pipelines. The 2.7V to 3.3V supply integrates with standard 3.3V backplane logic, and the compact 48-TFBGA (7.5 x 9.5 mm) ball-grid array allows dense placement under BGA network processors where TSOP height and clearance are limited.
おすすめ
Medical and Test Instrumentation Data Storage
Portable medical monitors and bench instruments require volatile working memory with deterministic timing for waveform capture, calibration tables, and sensor buffering. The K6F1616U6A-EF55T delivers 2MB of 55ns asynchronous storage with no refresh cycles, so a real-time loop is never stalled by memory housekeeping - an important factor in sampling systems with hard deadlines. Its full-CMOS construction minimizes average current draw in battery or patient-worn devices, and the low 2.7V floor allows operation from a single 3.0V cell through discharge, simplifying the power tree versus 5V-class legacy SRAM.
おすすめ
FPGA Reference Design Scratchpad
FPGA-based systems frequently attach external asynchronous SRAM as a scratchpad for soft-processor heaps, video line buffers, or DSP working arrays. The K6F1616U6A-EF55T's parallel 16-bit asynchronous interface maps directly onto a simple FPGA memory controller built from chip enable, output enable, and write enable strobes - no clock-domain logic or refresh sequencer is required. At 55ns, a 50MHz FPGA fabric can complete one access every few cycles without wait-state gymnastics. The 48-TFBGA footprint sits cleanly beside BGA-packaged FPGAs such as the Microsemi families used in industrial and aerospace boards.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: K6F1616U6A-EF55T — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | K6F1616U6A-EF55 |
|---|---|---|
| Package | 48-TFBGA (7.5 x 9.5 mm) | 48-TFBGA (7.5 x 9.5 mm) - same |
| Brand | Samsung Electronics | Samsung Electronics |
| Memory Size | 16 Mbit | 16 Mbit |
| Organization | 1M x 16 | 1M x 16 |
| Access Time | 55 ns | 55 ns |
| Supply Voltage | 2.7 V to 3.3 V | 2.7 V to 3.3 V |
| Packaging / Delivery | Tape & Reel (T suffix) | Tray |
主な差別化要因
- Fastest speed grade in the family （vs K6F2016U4E-EF70T)
- Compact ball-grid footprint （vs K6X0808C1D-GF55T)
- Supply-chain flexibility via tray variant （vs K6F1616U6A-EF55)
設計ノート
At the 55ns access grade, bus timing is the dominant risk. Budget the full address-valid-to-data-valid delay plus output-enable access time and host setup/hold margins; avoid assuming 55ns end-to-end. Keep TFBGA escape traces under 50mm and route address/data as a loosely length-matched group. Add 0.1uF plus 10uF ceramic decoupling within 2mm of the VDD/GND ball pair, and series-terminate address lines longer than 80mm to control ringing on 3.3V CMOS edges.
The 48-TFBGA (7.5 x 9.5 mm) ball map requires a dedicated land pattern; do not reuse TSOP or other BGA footprints. Follow the Samsung datasheet land-pattern appendix for pad diameter and mask openings, and fan out with via-in-pad or dog-bone escapes as board thickness dictates. Verify the ball map directly against the official datasheet ball assignment table before release - distributor summaries do not carry per-ball detail, and pinout accuracy must come from the manufacturer document.
Estimated: an asynchronous full-CMOS SRAM at this density draws negligible average power in standby (device deselected); the main consumption occurs during access cycles. Size the 3.3V rail using the datasheet operating current at your actual cycle rate rather than worst-case datasheet maxima, and confirm exact standby/operating microamp values from the Samsung K6F1616U6A datasheet DC table, as precise values were not published in the retrieved distributor data.
コンプライアンス情報
Compliance data was not included in the retrieved distributor summaries. Verify RoHS/REACH status on the Samsung Semiconductor official product page or the distributor environmental data sheet before procurement.
