K9T1G08U0M-PIB0
K9T1G08U0M-PIB0 - 1Gbit SLC NAND Flash, TSOP-I | Samsung
The Samsung K9T1G08U0M-PIB0 is a 1 Gbit (128M x 8) single-level cell (SLC) NAND Flash memory organized as 128 megabytes by 8 bits, supplied in a 48-pin TSOP Type I package with a 2.7V-3.6V single power supply. It belongs to Samsung's K9T family of asynchronous SLC NAND devices, offering high-density non-volatile storage with 8-bit I/O bus interface and standard NAND command set compatibility.
What is SLC NAND Flash? SLC (Single-Level Cell) NAND Flash stores one bit per memory cell, providing higher endurance, faster write performance, and longer data retention than MLC or TLC counterparts. NAND Flash sits in the non-volatile memory hierarchy between NOR Flash (byte-level random access) and mass storage like eMMC/SSD controllers. It is widely used as a raw storage medium paired with an external controller for error correction (ECC), bad block management, and wear leveling. SLC variants typically deliver 100,000 P/E cycles versus 1,000-3,000 for MLC, making them preferred for industrial, automotive, and embedded systems requiring long-term reliability.
Key specifications of the K9T1G08U0M-PIB0 include a 1 Gbit density, x8 organization, page size of 2 Kbytes, block size of 128 Kbytes, and an on-chip page register for read/program operations. The device features an asynchronous interface with typical read access times, hardware data protection, and supports CE#-low read operations. Operating from 2.7V to 3.6V VCC, the PIB0 suffix indicates Pb-free (lead-free) compliance, and the package designation maps to TSOP Type I (48-pin, 12 mm x 20 mm body).
The K9T1G08U0M-PIB0 uses a NAND string architecture with floating-gate SLC cells, an integrated page buffer, and an internal command/address state machine. The control logic accepts standard NAND command codes (00h/30h for read, 80h/10h for program, 60h/D0h for erase). The 8-bit multiplexed I/O bus carries both address, command and data, with dedicated control signals including CE#, RE#, WE#, ALE, CLE, WP#, and R/B# (Ready/Busy).
Typical applications include embedded Linux boot storage, industrial data loggers, set-top box firmware, networking equipment (routers, switches), point-of-sale terminals, and automotive infotainment. The 1 Gbit density is well suited for storing bootloaders, OS images, logs, configuration, and small media files in cost-sensitive designs that need non-volatile memory without the overhead of managed flash controllers.
When designing with this device, the host controller must implement hardware or software ECC (typically 1-bit per 528 bytes for legacy NAND, or 4-bit/8-bit for higher reliability). Bad block management is mandatory - factory-marked bad blocks must be skipped during initial mapping. Adequate VCC decoupling and a stable R/B# poll sequence are critical; consult the Samsung K9T1G08U0M datasheet for command timing diagrams.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
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