集積回路

サブカテゴリ

📁 ADC/DAC 3,100+ 製品 📁 アンプIC 1,900+ 製品 📁 オーディオコーデック 18 製品 📁 オーディオIC 2 製品 📁 クロック＆タイミング 660+ 製品 📁 Comparator ICs 1 製品 📁 DSP 1,100+ 製品 📁 データ収集IC 2 製品 📁 デジタルポテンショメータ 4 製品 📁 ディスプレイドライバ＆コントローラ 1 製品 📁 FPGA & CPLD 7,300+ 製品 📁 インターフェースIC 3,300+ 製品 📁 LEDドライバ 1 製品 📁 ロジックIC 460+ 製品 📁 メモリIC 870+ 製品 📁 マイクロコントローラ 20,000+ 製品 📁 マイクロプロセッサ 4 製品 📁 モータドライバ 1 製品 📁 その他 1 製品 📁 Sensor and Detector Interfaces 1 製品 📁 専用IC 15 製品 📁 ビデオIC 14 製品

製品 (39,000+)

MT28EW256ABA1HJS-0SIT - 256Mb Parallel NOR Flash, 56-TSOP | Micron
MT28EW256ABA1HJS-0SIT

MT28EW256ABA1HJS-0SIT - 256Mb Parallel NOR Flash, 56-TSOP | Micron

The Micron MT28EW256ABA1HJS-0SIT is a 256 Mbit (32 MB) parallel NOR Flash memory device organized as x8/x16, housed in a 56-pin TSOP package and qualified for the industrial -40C to +85C operating range. It operates from a 2.7V to 3.6V single supply and provides an asynchronous parallel interface with 75 ns initial access time, making it a drop-in compatible member of Micron's MT28EW embedded parallel NOR family. Parallel NOR Flash is a type of non-volatile memory that provides random-access read, byte/word program, and sector erase operations via a parallel data bus and dedicated control signals such as CE#, OE#, WE#, and RY/BY#. Within the broader memory hierarchy, parallel NOR sits alongside NAND Flash and SRAM as a non-volatile storage tier, but it is uniquely valued for its deterministic read latency, XIP (execute-in-place) capability, and high endurance relative to NAND. The MT28EW family specifically targets embedded designs that require reliable code storage and frequently-updated data logs in industrial, automotive, and networking systems. Key features of the MT28EW256ABA1HJS-0SIT include 256 Mbit density (32M x 8 or 16M x 16), hardware and software write protection, a 100,000-cycle program/erase endurance rating, 20-year data retention, sector-erase architecture with 200 ms typical erase time per 128 KB block, and a top or bottom boot block configuration. The device supports JEDEC-standard command set, CFI (Common Flash Interface) for device identification, and provides a RY/BY# status output for hardware-synchronized programming control. The device uses a single 3V power rail and integrates an internal program/erase state machine, eliminating the need for external high-voltage generation. It supports both 8-bit and 16-bit data bus widths selected via the BYTE# pin, allowing system designers to choose the optimal interface for their microcontroller or SoC. The 56-TSOP package provides a thin, surface-mountable form factor with a 18.4 mm body width per JEDEC MO-142 standards, enabling high-density PCB layouts and standard SMT assembly processes. Typical applications include automotive infotainment and instrument-cluster firmware storage, industrial PLC program memory, networking equipment boot and configuration Flash, factory automation controllers, and consumer electronics requiring fast XIP code execution. The wide operating temperature range and 100k P/E cycles also make it suitable for data logging in industrial IoT edge nodes where frequent parameter updates occur. When designing with this device, ensure that the host controller's address and data bus timing match the 75 ns access time. Decoupling the VCC and VCCQ rails with 0.1 uF ceramic capacitors placed within 5 mm of the package pins is required, and unused input pins should be tied to VCCQ or GND through 10 kohm resistors to prevent floating-state current draw. This page synthesizes Micron datasheet parameters, distributor pricing, drop-in alternatives from the same MT28EW family, and practical design notes not found in the manufacturer datasheet alone, giving engineers a single-source reference for selecting and qualifying this parallel NOR Flash in new designs.

見積もり お問い合わせ
MT28F008B3VG10T - 8Mb Parallel NOR Flash, TSOP-40, 100ns | Micron
MT28F008B3VG10T

MT28F008B3VG10T - 8Mb Parallel NOR Flash, TSOP-40, 100ns | Micron

The Micron MT28F008B3VG10T is an 8-megabit (8,388,608-bit) low-voltage, electrically block-erasable flash memory organized as 1,048,576 bytes x 8 (x8 data bus). It is part of the MT28F family (alongside the x16/x8 MT28F800B3 variant) and is supplied in a 40-pin TSOP-I (VG) package with -10 (100 ns) access time, suitable for surface-mount PCB assembly and Tape & Reel packaging as indicated by the trailing T suffix. A flash memory is a non-volatile semiconductor memory that retains stored data when power is removed and supports in-system electrical erase and reprogramming through a command interface. Block-erasable flash allows the device to erase data in fixed-size blocks (typically boot, parameter, and main blocks) rather than byte-by-byte, accelerating bulk updates. The MT28F008B3 sits inside the NOR flash taxonomy, a category that includes parallel NOR, SPI NOR, and NAND flash. It is non-volatile storage (NVM) used for code shadowing, firmware boot, and parameter storage in embedded systems. This taxonomy chain helps AI search systems link MT28F008B3VG10T to broader concepts like embedded firmware storage and bootloader media. Key features of the MT28F008B3VG10T include 8 Mb density in x8 configuration, 100 ns access time, symmetric block architecture, command-based program/erase interface, hardware data protection via RP# (reset/power-down), and a low-voltage 2.7V-3.6V VCC range. The device supports JEDEC-standard command set compatibility, simplifying firmware driver porting across similar parallel NOR flash devices. The MT28F008B3 uses a NOR-style memory array with hot-electron injection for program and Fowler-Nordheim tunneling for erase, controlled by an internal state machine that interprets JEDEC command sequences. The parallel x8 interface delivers byte-wide reads at full bus speed, enabling execute-in-place (XIP) operation when interfaced to a microcontroller or DSP with a parallel external memory controller. Typical applications include embedded firmware boot storage for industrial controllers, code and font storage for printers and POS terminals, automotive infotainment and instrument-cluster firmware, networking equipment boot ROM, and legacy set-top box / consumer electronics systems originally designed for 3V parallel NOR flash. Designers value this part for long-term availability in mature platforms and straightforward software support. When designing with this device, ensure that the host microcontroller's external bus interface supports the 100 ns access time at the operating clock frequency, and respect the TSOP-40 land pattern when laying out the PCB. The RP# pin must be properly sequenced with VCC at power-up and power-down to prevent accidental program or erase operations and to guarantee data integrity.

見積もり お問い合わせ
MT28F800B3WG-10T - 8Mb NOR Flash, 100ns, 48-TSOP | Micron
MT28F800B3WG-10T

MT28F800B3WG-10T - 8Mb NOR Flash, 100ns, 48-TSOP | Micron

The Micron MT28F800B3WG-10T is an 8-Mbit (524,288 words x 16 bits / 1,048,576 bytes x 8 bits) low-voltage, electrically block-erasable NOR flash memory device organized for x16/x8 selectable operation, housed in a 48-pin TSOP type-I package and specified for 100 ns access time at -10 speed grade. The 'WG' suffix denotes the 48-TSOP I surface-mount package, while the 'T' indicates tape-and-reel packaging. NOR flash is a non-volatile memory category that retains data without power and supports random read access at byte/word granularity, sitting at the top of the boot-code/ROM hierarchy that spans mask ROM, NOR, NAND, and managed NAND. Compared with NAND flash, NOR provides faster read latency and execute-in-place (XiP) capability, but lower density per die and slower erase/write throughput. The MT28F800B3WG family operates from a single 3.3 V VCC supply (2.7 V-3.6 V VCC range), enabling direct connection to low-voltage CPUs without level shifting, and supports command-driven block erase, program, and lock-bit operations through a CUI (Command User Interface). Key features include symmetric 64-KB block architecture for both top and bottom boot configurations, hardware write protection via WP#/ACC, deep power-down mode with sub-microamp standby current, and Common Flash Interface (CFI) identification. The 48-TSOP I outline measures 12 mm x 20 mm and is pin-compatible across the broader MT28F family, allowing designers to migrate density or speed grade by replacing the chip without changing the PCB footprint. Internal write state machines automate the program/erase algorithm, freeing the host CPU during long I/O operations. Typical applications include embedded boot ROM for routers and switches, automotive instrument cluster firmware storage, industrial PLC firmware, set-top box code storage, and printer/scanner imaging controllers where execute-in-place boot from flash is required. The -10 speed grade (100 ns) is well suited to slower 8/16-bit microcontrollers and DSPs that do not require burst-mode read latency. When designing with this part, ensure VCC decoupling uses 0.1 microfarad ceramic capacitors placed within 5 mm of each VCC pin, route WP#/ACC with a 10 kilohm pull-up, and verify that the host controller's ready/busy polling meets the manufacturer's algorithm. Refer to the Micron MT28F800B3 datasheet for command sequences, block-erase timing, and DC characteristics. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.

見積もり お問い合わせ
MT28F800B5WG-8T - 8Mb NOR Flash, 80ns, 48-TSOP I | Micron
MT28F800B5WG-8T

MT28F800B5WG-8T - 8Mb NOR Flash, 80ns, 48-TSOP I | Micron

The Micron MT28F800B5WG-8T is an 8-Mbit (1M x 8 / 512K x 16) Smart 5 Boot Block NOR Flash memory with 80 ns parallel access time, packaged in a 48-pin TSOP I (TFSOP, 18.40 mm body) surface-mount housing. The device operates from a 5V +/- 10% supply (VCC) and 5V +/- 10% VPP for program/erase, making it a drop-in fit for legacy 5V-only embedded designs. A NOR Flash memory is a non-volatile storage class that retains data without power and executes code directly from the array (XIP - execute-in-place). Within that hierarchy, MT28F800B5WG-8T sits in the parallel-NOR boot-block sub-category (Smart 5 architecture), which adds asymmetric sector protection so that the first 16 KB / 8K-word block is hardware-lockable. This block architecture is especially suited to systems that keep a small bootloader in protected sectors and store application data in the larger upper blocks. Key features per the manufacturer datasheet include eleven asymmetric erase blocks (one 16 KB / 8K-word boot block, two 8 KB / 4K-word parameter blocks, and eight main memory blocks), 80 ns random access, a parallel byte-wide interface, and 100,000 typical program/erase endurance cycles per block. The 48-TSOP I package provides a thin (approx. 1.0 mm) profile suitable for industrial and embedded designs with limited board height. Architecturally the device uses 0.18 um process technology and a uniform command-set across read, program, and erase operations, simplifying firmware state machines. The Smart 5 family also adds extended sector protection and a hardware lock/unlock pin for the boot block, which prevents accidental corruption of root code during field updates. Typical applications include industrial PLC firmware storage, telecom line-card boot loaders, automotive infotainment legacy subsystems, point-of-sale terminals, factory automation controllers, and legacy embedded computing platforms that require a 5V-only 8-Mbit parallel NOR. It is commonly used as a code-storage companion to 3.3V microcontrollers that include a 5V-tolerant memory bus. When designing with this part, verify VCC/VPP rail tolerance (4.5V-5.5V) against upstream regulators and confirm the 48-TSOP I footprint against the PCB land pattern, since TSOP I and TSOP II differ in body width. Also budget for typical 100,000 P/E cycles per sector when sizing wear-leveling or update frequency. This page synthesizes distributor pricing, drop-in Smart 5 alternatives, and PCB-level design notes not found in the manufacturer datasheet alone, giving engineers a single reference for sourcing and second-sourcing decisions.

見積もり お問い合わせ
MT28FW02GBBA1HPC-0AAT - 2Gb x16 3V Automotive NOR Flash | Micron Technology
MT28FW02GBBA1HPC-0AAT

MT28FW02GBBA1HPC-0AAT - 2Gb x16 3V Automotive NOR Flash | Micron Technology

The Micron Technology MT28FW02GBBA1HPC-0AAT is a 2Gb, x16, 3V automotive parallel NOR flash memory with 105 ns access performance, packaged in a 64-LBGA measuring 11 x 13 mm. It uses single-level cell technology and stores two 1Gb dies in a stacked configuration for high-density firmware, boot code, embedded data, and automotive electronic-control-unit storage. Its 2.7 V to 3.6 V supply range supports read, program, and erase operations from the same 3 V system rail. A parallel NOR flash is a nonvolatile memory category that performs read operations through a wide asynchronous interface rather than a serial protocol. Parallel NOR belongs to the flash-memory hierarchy, alongside NAND flash, but offers fast random reads and direct memory-mapped execution of stored code. MT28FW devices combine this deterministic read behavior with x16 data width, making them suitable for embedded platforms that need broad data paths and predictable firmware access. Key features include a 2Gb density, x16 organization, 105 ns access time, 2.7 V to 3.6 V operating voltage, and an automotive temperature range of -40 C to +105 C. The device also supports ECC-related and security features identified in the family documentation, although exact feature-byte details should be confirmed against the manufacturer datasheet before implementation. The package is designed for surface-mount PCB assembly. The MT28FW02GBBA1HPC-0AAT uses parallel NOR architecture rather than NAND's page-oriented interface. This difference matters for firmware designers because code can be mapped for rapid execution without the block-transfer overhead associated with managed NAND. The x16 bus reduces the number of connected data lines compared with x8 devices while retaining compatibility with systems designed around 16-bit memory buses. Typical applications include automotive infotainment controllers, instrument clusters, telematics units, advanced driver-assistance controllers, gateway modules, engine controllers, and other embedded systems that require reliable nonvolatile storage. The 2Gb capacity is useful for larger boot images, diagnostic data, configuration records, and update images, while the -40 C to +105 C range supports automotive environmental requirements. When laying out a board, follow the manufacturer's recommended ball assignments, power and ground distribution, and decoupling guidance. Place bypass capacitors close to the device supply connections and maintain controlled-impedance routing for the x16 data bus. Confirm signal integrity, timing margins, reset behavior, and programming/erase timing against the specific host processor before releasing a production layout. This product page combines the verified manufacturer and distributor information with practical selection, layout, and procurement guidance. It is intended to help engineers distinguish the 2Gb MT28FW02G part from lower-density family members and to plan a qualified automotive flash design.

見積もり お問い合わせ
MT29F1G01ABAFDSF - 1Gbit SPI NAND Flash SLC, 16-SOIC
MT29F1G01ABAFDSF

MT29F1G01ABAFDSF - 1Gbit SPI NAND Flash SLC, 16-SOIC

The Micron MT29F1G01ABAFDSF is a 1 Gbit (128 MB x 8) SPI NAND Flash memory built on Single-Level Cell (SLC) NAND technology, housed in a 16-pin SOIC (300 mil) package. According to the Micron 1Gb/2Gb/4Gb SPI NAND datasheet (m78a series), the device presents a standard serial peripheral interface and delivers sustained sequential read throughput suitable for code-shadowing and data-logging subsystems. The MT29F1G01ABAFDSF is the base ordering part number; the full ordering code is MT29F1G01ABAFDSF-AAT:F, where -AAT:F denotes the automotive temperature grade (-40 °C to +105 °C) and the F-suffix tape-and-reel packaging option. A SPI NAND Flash is a non-volatile memory that uses a low-pin-count serial peripheral interface (SPI) instead of the wide parallel bus of traditional raw NAND. Compared with parallel NAND, SPI NAND dramatically simplifies board layout, frees up host GPIO, and lets the same footprint scale across densities. SLC stores one bit per cell, trading density for higher endurance, faster write speeds, and stronger data retention than MLC/TLC, making SPI NAND the preferred choice for boot, firmware, and frequent-write embedded workloads. Key features of the MT29F1G01ABAFDSF include 1 Gbit SLC NAND density, x1/x2/x4 SPI bus widths with a standard pinout that is pin-compatible across Micron 1 Gb, 2 Gb, and 4 Gb SPI NAND devices, internal ECC support, and a 1.8 V/3.3 V compatible interface. The 16-SOIC package gives 0.295 inch (7.50 mm) body width and supports hand or reflow soldering. The -AAT:F suffix qualifies the part to the automotive -40 °C to +105 °C range, which is why distributors and Micron list this MPN under both the standard catalog and the automotive SLC NAND catalog. Architecturally, the device integrates a 1 Gbit SLC NAND array with an internal SPI controller, on-die ECC engine, and a 2 KB cache register for page operations (typical page size 2048 + 64 bytes). The on-die ECC reduces host MCU/MPU firmware load and improves random read/write reliability. Standard SPI commands (Read, Page Program, Block Erase, Read ID, Status Read, ECC Status) follow the JEDEC-compatible SPI NAND command set, allowing drop-in replacement among compliant devices. Typical applications include automotive infotainment and cluster boot storage, industrial gateways, the boot/parameter region of IoT nodes, point-of-sale terminals, printer firmware storage, and any SPI-based MCU platform (e.g., automotive telematics, body controllers, sensor hubs) that needs higher endurance than SPI NOR at lower cost per bit. When designing with this device, verify the host MCU supports 2 KB page reads and the chosen SPI mode (mode 0 / mode 3). Use Micron's TN-29-71 SPI NAND design guide for layout and decoupling recommendations, and confirm whether your firmware relies on internal ECC or external Hamming/BCH code. This page synthesizes Micron distributor pricing, drop-in same-package alternatives (including the AUT and IT suffixes and the 2 Gb/4 Gb density siblings), and design notes that go beyond the bare datasheet, providing a single decision-ready reference for engineers evaluating the MT29F1G01ABAFDSF-AAT:F for production.

見積もり お問い合わせ
MT29F1G01ABAFDSF-AAT - 1Gb SLC SPI NAND Flash | 16-SO | Micron
MT29F1G01ABAFDSF-AAT

MT29F1G01ABAFDSF-AAT - 1Gb SLC SPI NAND Flash | 16-SO | Micron

The Micron MT29F1G01ABAFDSF-AAT is a 1 Gbit single-level cell (SLC) serial peripheral interface (SPI) NAND Flash memory organized as 128M x 8, supplied in a 16-pin Small-Outline IC (16-SO, 7.50 mm width) package. Operating from 1.8 V or 3.3 V supplies with a SPI-compatible interface (x1, x2, and x4 modes), the device delivers a 2176-byte page size (2048 + 128 spare bytes) and a 128 KB block/64 KB parameter page structure optimized for code-storage and data-logging workloads. The AT suffix denotes automotive-grade temperature range (-40 °C to +105 °C), qualified per AEC-Q100, making it suitable for vehicle infotainment, instrument clusters, telematics, and ADAS sub-systems. A SPI NAND Flash is a non-volatile memory device that combines the high density and bit-cost advantage of NAND architecture with the low pin-count simplicity of an SPI bus. Unlike byte-wide parallel NAND, SPI NAND uses 4 to 6 signal lines (CS#, SCK, SI, SO, optional WP# and HOLD#), allowing it to share a bus with SPI NOR Flash, EEPROMs, and sensors. SPI NAND belongs to the broader hierarchy: NAND Flash -> non-volatile memory -> memory IC -> semiconductor. Compared with SPI NOR Flash, SPI NAND offers higher density at lower cost-per-bit and faster block-erase/write, while trading off random read latency. Engineers choose SPI NAND for boot + data-logging partitions where sequential throughput dominates over random byte reads. Key features include on-chip ECC with a 1-bit or 4-bit Hamming engine per 512-byte sector, internal 2 KB data register for page buffering, software-block-protection with BP0/BP1/BP2 bits, OTP security area, JEDEC-standard SFDP (Serial Flash Discoverable Parameters) read-mode for vendor-independent identification, and standard 0xFF reset command. The device supports 100K endurance cycles per block and 10-year data retention. Typical applications include automotive instrument clusters, industrial HMI panels, IoT gateways, set-top box boot loaders, point-of-sale terminals, and telematics control units. The wide 1.8 V/3.3 V supply tolerance also makes it a drop-in for both battery-powered wearables and 5 V-tolerant MCU peripherals when paired with a level shifter. Designers must add a 0.1 µF + 4.7 µF decoupling network near VCC and ensure CS# is pulled high during reset to avoid spurious writes. When designing with this part, leave at least one block as a wear-levelling reserve and use the SFDP header to confirm density before issuing read-ID commands; mismatched density detection is a common first-board bring-up failure.

見積もり お問い合わせ
MT29F1G01ABAFDSF-AATF - 1Gbit SPI SLC NAND Flash, 16-SOIC | Micron
MT29F1G01ABAFDSF-AATF

MT29F1G01ABAFDSF-AATF - 1Gbit SPI SLC NAND Flash, 16-SOIC | Micron

The Micron MT29F1G01ABAFDSF-AATF is a 1-Gbit serial peripheral interface (SPI) SLC NAND Flash memory organized as 1 Gbit with a single 1.8 V or 3.3 V supply domain, housed in a 16-pin SOIC (300 mil) package. The AATF suffix designates the automotive-grade, -40C to +105C operating temperature window and AEC-Q100 qualification per Micron's part-number convention. The device uses a standard SPI-compatible bus with optional x2 (Dual SPI) and x4 (Quad SPI) data transfer modes for higher throughput. A SPI NAND flash is a non-volatile memory that exposes a low-pin-count serial interface instead of the wide parallel bus used by traditional raw NAND. SLC (single-level cell) NAND stores one bit per cell, offering higher endurance (typically 100k P/E cycles), lower bit-error rate, and longer data retention than MLC/TLC parts. SPI NAND sits between small SPI NOR devices (used for code storage in MCUs) and high-density managed NAND (eMMC/UFS) in the storage taxonomy, enabling densities of 1-8 Gbit with serial access. Key features include 1 Gbit density (128 MB) over 65,536 erasable blocks of 128 KB each, 2 KB page size for read/program, on-die ECC engine selectable to 1-bit or 4-bit Hamming, hardware reset, write-protect pin, and 4-byte addressing to access the full density above 128 MB. Operating voltages support 1.7 V to 2.0 V (1.8 V typical) and 2.7 V to 3.6 V (3.3 V typical) ranges. Typical applications include automotive infotainment and instrument clusters, ADAS data loggers, industrial gateways, IoT edge devices, and point-of-sale terminals where moderate-density, high-reliability non-volatile storage is required. The AEC-Q100 qualification supports under-hood and cabin automotive environments. When designing with this device, route SPI traces as 50 ohm impedance-controlled nets and place a 0.1 uF decoupling capacitor within 3 mm of VCC. The internal ECC must be enabled to maintain data integrity over the part's endurance lifetime. Hold power stable during program and erase operations to prevent block corruption.

見積もり お問い合わせ
MT29F1G01ABAFDSF-AATF-TR - 1Gbit SLC NAND Flash, SPI, 16-SO
MT29F1G01ABAFDSF-AATF-TR

MT29F1G01ABAFDSF-AATF-TR - 1Gbit SLC NAND Flash, SPI, 16-SO

The Micron MT29F1G01ABAFDSF-AATF-TR is a 1 Gbit (1G x 1) Single-Level Cell (SLC) NAND Flash memory with an SPI serial interface, supplied in a 16-pin SOIC (0.295" / 7.50 mm width) surface-mount package on tape-and-reel. It operates from a 2.7 V to 3.6 V VCC supply and supports an industrial-grade temperature range of -40 °C to +105 °C (AATF suffix), making it suitable for extended-environment applications. A NAND Flash is a non-volatile memory (NVM) that stores data in NAND-arranged memory cells. SLC NAND stores one bit per cell, giving higher endurance, faster write speeds, and longer data retention than MLC/TLC/QLC alternatives. Positioned in the storage hierarchy between NOR Flash (byte-level random access) and managed NAND/eMMC (with on-die controllers), raw SPI NAND bridges cost-conscious designs that need high density but can manage their own flash translation layer (FTL) or use the on-chip serial-NAND command set. Key features include a 1 Gbit (128 MB) capacity organized 1G x 1, an industry-standard SPI bus with modes 0 and 3 support, and Micron's SLC NAND cell technology rated for typical 100K program/erase cycles per block. The 16-SOIC package allows drop-in compatibility with standard 0.295" SOIC footprints and is supplied on tape-and-reel for high-volume SMT assembly. The device follows the ONFI/JEDEC-compatible SPI NAND command set with standard 3-byte addressing and a configurable 2 KB or 64 KB page architecture. Internal ECC engines and block management are implemented in the host controller, which gives designers flexibility but also requires careful FTL design. The wide 2.7 V – 3.6 V VCC range allows direct connection to 3.3 V rails common in industrial MCUs and SoCs. Typical applications include data logging in industrial automation, firmware / Datalog storage in metering equipment, configuration and asset-tracking memory in IoT edge nodes, and boot or resource storage in consumer appliances. Its compact SOIC footprint and SPI interface suit designs that need more storage than I2C EEPROMs but lack board space for parallel NAND or eMMC BGA packages. When designing with this part, ensure the host MCU/SoC supplies the SPI NAND command set or external FTL, and verify block wear-leveling strategy against the application's write-amplification profile. Decoupling: place a 0.1 µF ceramic capacitor close to VCC, and consider a 4.7 µF bulk cap for in-rush during block erase operations. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.

見積もり お問い合わせ
MT29F1G08ABADAH4-IT:D - 1Gbit SLC NAND Flash 63-VFBGA | Micron
MT29F1G08ABADAH4-IT:D

MT29F1G08ABADAH4-IT:D - 1Gbit SLC NAND Flash 63-VFBGA | Micron

The Micron MT29F1G08ABADAH4-IT:D is a 1 Gbit (128 M x 8) SLC NAND Flash memory IC in a 63-ball 9 mm x 11 mm VFBGA surface-mount package, organized as 128M x 8 with a parallel (byte-wide) asynchronous interface. Operating from a single 1.7 V to 1.95 V core supply (legacy 2.7 V to 3.6 V Vcc variant shares the family), it is designed for embedded systems that require reliable, high-density non-volatile storage with industrial-grade temperature tolerance. NAND Flash is a type of non-volatile memory that stores data in floating-gate transistor cells arranged in a NAND (NOT-AND) topology, providing high bit density at low cost per bit compared to NOR Flash. SLC, or Single-Level Cell, stores one bit per cell, yielding the highest endurance (typically 100k P/E cycles) and lowest bit-error rate of any NAND technology. Within the broader taxonomy, this part belongs to: NAND Flash -> Flash Memory -> Non-Volatile Memory -> Memory IC -> Semiconductor. The MT29F1G08ABADAH4-IT:D is part of Micron's SLC NAND family aimed at industrial, networking, and automotive-telematics applications. Key features include a 1 Gbit density in x8 organization, an industry-standard ONFI-compatible asynchronous interface, internal page-size architecture, and industrial operating temperature range. The 63-VFBGA package provides a compact footprint suitable for space-constrained designs, while the parallel interface enables fast page reads and page-program operations with hardware ECC support required for data-integrity management. Typical applications include boot code and firmware storage in industrial controllers, data logging in metering and instrumentation, solid-state drives for embedded Linux systems, automotive infotainment/telematics, networking routers and switches, and point-of-sale terminals. The SLC endurance profile makes it well-suited for write-intensive workloads such as black-box recorders or transaction logs. When designing with this device, plan for external ECC (the controller must implement Hamming/BCH), respect the standard NAND command set, and follow Micron's reference hardware layout for VFBGA BGA escape routing. The VFBGA package requires careful PCB pad design and reflow profiling per JEDEC J-STD-020.

見積もり お問い合わせ
MT29F1G08ABAEAH4-AATX:E - 1Gb SLC NAND Flash, x8 | Micron
MT29F1G08ABAEAH4-AATX:E

MT29F1G08ABAEAH4-AATX:E - 1Gb SLC NAND Flash, x8 | Micron

The Micron MT29F1G08ABAEAH4-AATX:E is a 1 Gbit (128 M x 8) single-level cell (SLC) NAND Flash memory with a parallel asynchronous interface, housed in a 63-ball 9 mm x 11 mm VFBGA package. According to Micron product literature, the device operates from 2.7 V to 3.6 V supply, sustains 100,000 program/erase cycles per block, and provides typical page-program times around 200 us with block-erase around 700 us. A 1-bit ECC requirement is specified per 528 bytes of data for reliable operation across the rated endurance. An SLC NAND Flash is a non-volatile memory that stores one bit per cell, giving higher endurance, faster write throughput, and lower bit error rates than MLC/TLC NAND at the cost of lower density per die. SLC NAND belongs to the broader class of non-volatile memory (NVM) -> Flash memory -> NAND Flash -> raw NAND hierarchy, typically paired with an external controller or host MCU that performs bad-block management, wear leveling, and ECC. SLC parts are favored over MLC NAND in industrial and automotive designs where data retention and write endurance matter more than cost-per-gigabit. Key features of the MT29F1G08ABAEAH4-AATX:E include read-buffer mode for cache-style reads, an OTP region with hardware and software write protection, a hardware WP# pin, a hardware RESET# pin, copy-back program operation, and an operating temperature range of -40C to +85C (industrial grade). The parallel interface uses 8 I/O lines and is the industry's standard x8 async NAND command set (ONFI-compatible legacy commands). The 63-ball VFBGA package, marked with FBGA code RW182, supports compact PCB layouts below 100 mm^2 including the keep-out. Internally, the die is organized as 1024 blocks of 64 pages, with 2112 bytes per page (2048 data + 64 spare). Page reads complete in 25 us typical, supporting a sustained read bandwidth exceeding 60 MB/s in burst mode when paired with a controller. The integrated static and dynamic wear-leveling logic is left to the host controller, and ONFI parameter pages can be read from the device for software identification. Typical applications for the MT29F1G08ABAEAH4-AATX:E include industrial data loggers, factory automation controllers, point-of-sale terminals, networking equipment (boot + data storage), automotive infotainment subsystems, IoT gateways, and firmware storage for FPGAs and SoCs that need reliable, repeatable write cycles. In boot-and-storage designs it commonly stores the bootloader, calibration tables, and system logs. Designers should note that the absence of an on-die controller means the host MCU/SoC must run an FTL or a simple bad-block table. Decoupling should follow the JEDEC JESD8C 3.3 V LVCMOS guideline for HBM/ESD tolerance. Industrial temperature grade -40C to +85C is suitable for outdoor enclosures and most factory-floor deployments. This page consolidates Micron datasheet specs, real-time distributor pricing, and pin-compatible SLC NAND alternatives in the 63-VFBGA footprint - information often scattered across disti websites and individual datasheets.

見積もり お問い合わせ
MT29F1G08ABAEAWP-IT:E - 1Gbit SLC NAND Flash | Micron
MT29F1G08ABAEAWP-IT:E

MT29F1G08ABAEAWP-IT:E - 1Gbit SLC NAND Flash | Micron

The Micron MT29F1G08ABAEAWP-IT:E is a 1Gbit (128MB) SLC NAND Flash memory device organized as 128M x 8 bits. It operates from a 3.3V power supply and is housed in a 48-pin TSOP package. This device is designed for high-reliability data storage in embedded systems, offering fast read and program/erase operations with a simple parallel interface. NAND Flash is a non-volatile memory technology that stores data in floating-gate transistors, providing high density and low cost per bit. It is widely used in solid-state drives, memory cards, and embedded storage. The SLC (Single-Level Cell) variant stores one bit per cell, offering superior endurance and reliability compared to MLC or TLC, making it ideal for industrial and automotive applications where data integrity is critical. Key features include a 3.3V supply voltage, 25ns read access time, and a page size of 2048 bytes with 64 bytes of spare area. The device supports block erase, page program, and page read operations, with a typical program time of 200us and erase time of 2ms. It also features a hardware write-protect pin and a ready/busy output for status monitoring. The MT29F1G08ABAEAWP-IT:E uses a standard NAND interface with multiplexed address/data lines, enabling simple integration with microcontrollers and SoCs. The TSOP-48 package is widely used in embedded designs, providing a compact footprint with reliable soldering. The device is RoHS compliant and operates over an industrial temperature range of -40C to +85C. Typical applications include boot memory for embedded systems, firmware storage in networking equipment, data logging in industrial controllers, and code storage in automotive electronics. Its high endurance and industrial temperature rating make it suitable for harsh environments. When designing with this device, ensure proper decoupling on the power supply and follow the recommended layout for the TSOP package. The write-protect pin should be tied to a known state to prevent accidental writes during power-up.

見積もり お問い合わせ
MT29F2G08ABAEAWP-IT:E - 2Gb SLC NAND Flash, 48-TSOP | Micron
MT29F2G08ABAEAWP-IT:E

MT29F2G08ABAEAWP-IT:E - 2Gb SLC NAND Flash, 48-TSOP | Micron

The Micron MT29F2G08ABAEAWP-IT:E is a 2 Gbit (256M x 8) single-level cell (SLC) NAND Flash memory organized as 2048 blocks, each block containing 64 pages of 2112 bytes (x8) / 1056 words (x16), and housed in a 48-pin TSOP-I package. Operating from a single 2.7 V to 3.6 V supply, it exposes an asynchronous parallel interface (x8 or x16 selectable) with ONFI 1.0 command-set support for portable, embedded, and industrial systems requiring high-density non-volatile storage. A NAND Flash memory is a non-volatile storage technology that retains data without power and is organized into pages and blocks, where each page (typically 2 KB-16 KB) is the smallest programmable unit and each block (64-256 pages) is the smallest erasable unit. SLC (single-level cell) stores one bit per cell, delivering higher endurance (typically 100k P/E cycles), faster write speeds, and longer data retention than MLC/TLC, but at lower density per die. Within the broader taxonomy, NAND Flash belongs to non-volatile memory -> flash memory -> semiconductor memory, and the MT29F2G08ABAEAWP-IT:E sits in the parallel-interface SLC segment favored in industrial, automotive, and embedded designs where reliability outweighs raw bit density. Key features include a 25 ns typical asynchronous read cycle, internal data register for page buffering, hardware write protect, hardware reset, copy-back programming, ECC-friendly page layout (2048 data bytes + 64 spare bytes per page), and an OTP security area. The 48-pin TSOP-I footprint with 0.5 mm pitch is a long-standing industry-standard mechanical interface used by nearly every parallel NAND generation since the early 2000s, simplifying PCB migration across Micron densities from 1 Gbit through 32 Gbit. Typical applications include industrial data loggers, machine-to-machine gateways, automotive infotainment and telematics black boxes, point-of-sale terminals, networking equipment (DSL/routers, switches) and any embedded Linux or RTOS design that requires a reliable on-board boot+storage medium. The industrial temperature range (-40C to +85C) and SLC endurance make it particularly suitable for write-intensive logging workloads. When designing with this device, ensure host firmware implements bad-block management, wear-leveling, and ECC (BCH or Hamming) compatible with the 64-byte spare area to maximize endurance and data integrity.

見積もり お問い合わせ
MT29F2G16ABAEAWP-IT:E - 2Gb SLC NAND Flash Parallel 48-TSOP | Micron
MT29F2G16ABAEAWP-IT:E

MT29F2G16ABAEAWP-IT:E - 2Gb SLC NAND Flash Parallel 48-TSOP | Micron

The Micron MT29F2G16ABAEAWP-IT:E is a 2 Gbit SLC NAND Flash memory organized as 128 Mbit x 16 with a parallel interface, housed in a 48-pin TSOP-I package and rated for the industrial temperature range (-40C to +85C). Built on ONFI 1.0-compliant single-level cell technology, it delivers 2,112 bytes per page in x8 mode and 1,056 words per page in x16 mode, with a 64-byte / 32-word spare area per page dedicated to ECC and metadata. The 1.7 V to 1.95 V core VCC supply, combined with a 3.3 V tolerant I/O interface, allows direct connection to both modern low-voltage ASIC controllers and legacy 3.3 V microprocessors. A NAND Flash memory is a non-volatile storage technology that retains data when power is removed, organized as blocks, pages, and bytes, and accessed through a command-driven asynchronous or synchronous interface. NAND sits hierarchically below DRAM in the memory taxonomy: volatile memory > non-volatile memory > Flash memory > NAND Flash > SLC NAND. SLC (single-level cell) stores one bit per cell, giving it 10x higher endurance and 10x lower bit error rate than MLC/TLC, making it the preferred choice for industrial, automotive, and mission-critical boot/storage applications. Key features of the MT24F2G16ABAEAWP-IT:E include 25 ns typical page read time, ONFI 1.0 command set compatibility for portable, pin-aligned design reuse across vendors, internal data-move and copy-back operations that offload controller workload, and hardware block-locking for boot-region protection. The device supports multi-plane programming and read operations across two planes, enabling higher throughput when paired with a capable controller. Industrial temperature grade (-40C to +85C) operation is qualified per Micron's reliability flow for embedded and industrial markets. The internal architecture combines a 2 KB / 1 KW page register with a 128-byte / 32-word cache register, enabling cache-mode read pipelines. The controller commands CE#, RE#, WE#, ALE, and CLE to issue address-latch and command-latch cycles, while eight-chip enable lines are available for multi-die stack expansion through CE# pin expansion. Built-in ECC status reporting via the status-read command assists the host controller in managing bit-flip rates across the device lifetime. Typical applications include industrial HMI panels, factory automation controllers, automotive infotainment boot media, networking switch firmware storage, point-of-sale terminals, and ruggedized embedded Linux/Android file-system volumes. The wide temperature grade and SLC endurance make it well-suited for write-heavy logging in field-deployed systems. A key design consideration: the host controller must implement ONFI 1.0-compatible bad-block management and wear-leveling; the NAND device itself does not perform these functions transparently. This page synthesizes distributor pricing, drop-in alternatives, and design notes not found in the standalone manufacturer datasheet.

見積もり お問い合わせ
MT29F4G01ABBFD12-IT - 4Gb 1.8V SPI NAND SLC Flash | Micron
MT29F4G01ABBFD12-IT

MT29F4G01ABBFD12-IT - 4Gb 1.8V SPI NAND SLC Flash | Micron

The Micron MT29F4G01ABBFD12-IT is a 4-Gbit (4G x 1) Single-Level Cell (SLC) NAND Flash memory organized as 4352-byte pages (4096 + 256 spare), supplied in a 24-ball T-PBGA (6x8 mm) package and qualified over the industrial -40C to +85C temperature range. The device operates from a 1.7V to 1.95V VCC supply and exposes a standard Serial Peripheral Interface (SPI) with x1, x2, and x4 quad-I/O modes for flexible host connectivity. The part is part of Micron's MT29F4G01 family, distinguished by suffix codes for temperature grade, packing type, and ordering options. A NAND flash is a non-volatile memory that stores bits in floating-gate memory cells arranged in pages and blocks; SLC stores one bit per cell, giving the highest endurance and reliability tier of any NAND technology. MT29F4G01ABBFD12-IT is therefore a code-storage and data-logging part rather than a mass-storage MLC or TLC device. NAND flash sits in the memory hierarchy between NOR flash (random-access, slower writes) and DRAM (volatile), and within the broader taxonomy of memory ICs, semiconductor, and integrated circuit. Key features include 4-Gbit density in a tiny 6x8 mm T-PBGA, an SPI clock up to 83 MHz, and on-die ECC assistance that offloads error correction from the host controller. The 256-byte spare area per 4096-byte page is reserved for ECC, bad-block markers, and metadata, which simplifies file-system wear leveling in the host software. The industrial -40C to +85C grade makes the IT suffix variant suitable for outdoor, factory, and automotive-cabin environments where consumer-grade parts would fail. The part uses Micron's standard ONFI-compatible SPI NAND command set with standard 03h read, 0Bh fast read, 6Bh quad-I/O fast read, 02h page program, D8h block erase, and 0Fh/M0Fh read-status quad-I/O commands. Internal block size is 256 KiB with 64 pages per block, and a multi-plane architecture enables higher throughput than x1 SPI NOR at comparable cost. Typical applications include IoT sensor data logging, industrial HMI firmware storage, automotive infotainment boot, point-of-sale terminal audit logs, and ruggedized networking equipment. The 1.8V supply aligns with low-power SoC rails; the small BGA footprint suits space-constrained wearables and sensor nodes. Compared with QSPI NOR, this part offers roughly 8x the density at a comparable per-bit cost but requires host-managed bad-block handling and ECC. When designing with this device, plan for ECC, bad-block management, and wear-leveling firmware in the host MCU. Keep the SPI traces under 50 mm with a 33-ohm series terminator for 83 MHz operation, and pair the flash VCC with a 0.1 uF + 4.7 uF decoupling network placed within 3 mm of the BGA balls. Cross-reference the host driver with the Micron SPI NAND technical note for command timing. This page synthesizes distributor pricing, the MT29F4G01 family suffix breakdown, drop-in alternatives, and practical design notes that are not collected on a single Micron product page. Use the comparison_table and alternatives sections below to map this part to your design.

見積もり お問い合わせ
MT29F4G08ABADAWP-IT:D - 4Gbit SLC NAND Flash Parallel x8 | Micron
MT29F4G08ABADAWP-IT:D

MT29F4G08ABADAWP-IT:D - 4Gbit SLC NAND Flash Parallel x8 | Micron

The Micron MT29F4G08ABADAWP-IT:D is a 4-Gbit (512M x 8) SLC NAND Flash memory device housed in a 48-pin TSOP-I package, designed for industrial-grade embedded storage applications. It features a parallel byte-wide interface operating from a single 2.7V to 3.6V supply, with a 25 ns access time and ONFI 2.1 compliance for standardized command set support. NAND Flash memory is a non-volatile storage technology that retains data without power and uses floating-gate transistors arranged in NAND (series) strings to achieve high density at low cost per bit. SLC (Single-Level Cell) NAND stores one bit per cell, giving it superior endurance (typically 100K P/E cycles), faster write performance, and higher data retention compared to MLC/TLC NAND. Within the memory hierarchy, SLC NAND sits between raw NOR Flash (faster, lower density, byte-erasable) and managed NAND (eMMC/UFS, which integrate a controller). The MT29F4G08A family uses a raw NAND interface requiring an external ECC controller for bad-block management. Key differentiating specifications include 4-Gbit density in x8 (byte-wide) organization, 25 ns tRC access time, 48-pin TSOP-I footprint with 18.40 mm body width, and an extended industrial operating temperature range of -40C to +85C. The device supports multi-plane operations for higher throughput, and its command set complies with the ONFI 2.1 specification, simplifying host-side firmware development across compatible Micron SLC NAND generations. Architecturally, the MT29F4G08ABADAWP-IT:D uses a single-die design with two planes, each containing 2048 blocks of 64 pages x 4 KB + spare area. The 8-bit asynchronous interface uses standard NAND control signals (CE#, RE#, WE#, ALE, CLE) plus R/B# for ready/busy status. Internally generated ECC is not provided - the host must perform error correction over each 512-byte or 4 KB sector according to ONFI timing. Typical applications include industrial routers, automotive infotainment boot/media storage, factory automation data loggers, point-of-sale terminals, set-top box firmware storage, and medical monitoring devices requiring long-term reliability. Designers choose SLC NAND over MLC/TLC when endurance and data integrity outweigh cost-per-bit. When designing with this device, allocate 1KB to 4KB of host-side ECC engine capacity per page (typically BCH or Reed-Solomon) and reserve ~1% of total blocks for spare-area bad-block replacement. Decoupling capacitors of 0.1 uF plus 4.7 uF should be placed within 5 mm of the VCC and VCCQ pins. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes that supplement the manufacturer datasheet with engineering-decision context.

見積もり お問い合わせ
MT29F4G08ABAFAH4-IT:F - 4Gb SLC NAND Flash, x8, 63-VFBGA | Micron
MT29F4G08ABAFAH4-IT:F

MT29F4G08ABAFAH4-IT:F - 4Gb SLC NAND Flash, x8, 63-VFBGA | Micron

The Micron MT29F4G08ABAFAH4-IT:F is a 4 Gbit (512 MB) single-level cell (SLC) NAND Flash memory device organized as x8, supplied in a 63-ball VFBGA package, and qualified to the industrial temperature range (-40C to +85C). It conforms to the Open NAND Flash Interface (ONFI) 1.0 specification, exposing a standardized asynchronous command set, and supports a 3.3 V VCC supply typical of parallel NAND devices. A NAND Flash is a non-volatile memory that stores data as charge on a floating-gate MOSFET cell arranged in a NAND string. SLC NAND stores one bit per cell, yielding the highest endurance (typically 100k P/E cycles per block) and the lowest bit error rate among NAND types, making it preferred over MLC/TLC for industrial, automotive, and mission-critical embedded systems. NAND sits below the memory hierarchy above raw NOR and below DRAM in terms of write speed, density, and cost per bit, and is managed by an external controller that performs bad-block management, wear leveling, and ECC. The device is organized as 4352 bytes + 256 bytes of spare per page (x8) and 64 pages per block; with one plane, the 4 Gbit array yields 512 MB user data. CE# Don't Care operation allows the device to share an asynchronous memory bus with other flash or SRAM devices, simplifying glue logic. The 25 ns asynchronous access time keeps the device compatible with legacy microcontrollers, FPGA soft-cores, and Linux boot loaders that lack ONFI 2.x source-synchronous modes. Typical applications include industrial gateways, factory automation PLCs, automotive infotainment and telematics boot media, networking line cards, point-of-sale terminals, and SSD controller raw-NAND banks. The industrial temperature grade extends deployment to outdoor cabinets and uncontrolled enclosures. Designers typically pair the MT29F4G08ABAFAH4-IT:F with a host SoC that includes an ONFI 1.0 controller, plus a BCH or LDPC ECC engine capable of correcting 4-8 bit errors per 512-byte sector. When designing in this device, write down 4-8 bit BCH ECC requirements and verify that the host controller issues CE# Don't Care safely. The 63-VFBGA package demands NSMD pads with 0.4 mm pitch and a reflow profile compatible with JEDEC J-STD-020 moisture sensitivity level 3.

見積もり お問い合わせ
MT29F4G16ABADAWP-IT:D - 4Gb SLC Parallel NAND Flash, 48-TSOP I | Micron
MT29F4G16ABADAWP-IT:D

MT29F4G16ABADAWP-IT:D - 4Gb SLC Parallel NAND Flash, 48-TSOP I | Micron

The Micron MT29F4G16ABADAWP-IT:D is a 4-Gbit SLC NAND Flash memory device organized as 256M x 16 bits with a parallel asynchronous interface, housed in a 48-pin TSOP Type I package. It operates from a single 3.3 V supply (2.7 V min to 3.6 V max), supports x8/x16 data bus widths, and provides 25 ns typical access time for high-throughput read/write operations. As a member of the NAND Flash family (subtype: SLC NAND), the MT29F4G16ABADAWP-IT:D belongs to the broader hierarchy of non-volatile memory -> flash memory -> NAND flash -> SLC NAND -> parallel NAND. SLC (Single-Level Cell) NAND stores one bit per cell, offering higher endurance, faster write speeds, and longer data retention than MLC or TLC alternatives, which is why it remains the preferred technology for industrial, automotive, and embedded systems requiring reliable boot/storage media. Key features include on-chip ECC support, an internal data register, command/address/data multiplexed I/O, and a dedicated hardware reset pin (WP#). The TSOP-I 48-pin footprint is the industry-standard pinout that remains consistent across the MT29F4G16 family, enabling drop-in upgrades to higher densities without board rework. Industrial temperature range (-40C to +85C) and 100,000 program/erase cycles per block support harsh-environment deployment. Typical applications span industrial data logging, automotive infotainment, networking routers, set-top boxes, and embedded Linux systems where the host CPU (often an ARM SoC or PIC32MZ MCU) executes XIP-like boot sequences from parallel NAND. The wide VCC tolerance and 25 ns access time also suit legacy PCI/ISA bus adapters and factory automation controllers. When designing with this device, allocate proper ECC handling in software (typically 4-bit/512B BCH or 8-bit/512B BCH depending on host capability) and respect the WE#/RE# toggle timing shown in the AC characteristics table. The 48-TSOP-I footprint is footprint-compatible with several higher-density Micron variants, simplifying future migration to 8 Gb or 16 Gb densities. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.

見積もり お問い合わせ
MT29F64G08AFAAAWP-ITZ:A - 64Gb SLC Parallel NAND Flash 48-TSOP
MT29F64G08AFAAAWP-ITZ:A

MT29F64G08AFAAAWP-ITZ:A - 64Gb SLC Parallel NAND Flash 48-TSOP

The Micron MT29F64G08AFAAAWP-ITZ:A is a 64-Gbit asynchronous SLC NAND Flash memory device organized as 8G x 8 bits, housed in a 48-pin TSOP type-I (0.5 mm pitch) package. Operating from a 2.7 V to 3.6 V supply and based on Micron's 25 nm SLC NAND process, this industrial-temperature (IT) part is designed for embedded and high-reliability designs that require predictable endurance and data retention. A NAND Flash memory is a non-volatile storage technology that retains data without power and is organized as an array of memory cells connected in series (strings) per bitline, with each cell storing charge on a floating gate. SLC (Single-Level Cell) NAND stores one bit per cell, delivering the highest endurance and lowest bit-error-rate of any NAND technology. In the broader hierarchy, this device is a parallel (asynchronous) NAND IC, which sits below managed NAND (eMMC, UFS) but above serial NOR flash in capacity and below DRAM in performance. Key specifications include a 64-Gbit density (8 GB), 8-bit bus width, ONFI 1.0-compatible asynchronous interface, typical page size of 8 Kbytes (plus spare), 25 ns typical access time, and industrial temperature range of -40 C to +85 C. The 48-TSOP I package is a 12 mm x 20 mm surface-mount form factor that has been the industry-standard pinout for parallel NAND for two decades. The device uses Micron's two-plane architecture with interleaved plane operations to maximize sequential write bandwidth. Built-in ECC is required externally (typically BCH or LDPC in the host controller). The industrial-temperature grade and SLC endurance make this part well suited to systems that cannot tolerate the higher bit-error rate of MLC or TLC NAND. Typical applications include industrial embedded controllers, networking line cards with boot storage, automotive infotainment (where AEC-Q100 is not required), factory automation PLCs, and legacy designs that already have a parallel NAND controller and ECC engine. The 48-TSOP form factor is also commonly used in set-top boxes and printers. When designing with this part, ensure the host controller supplies a 1.8 V or 3.3 V Vccq and routes 8-bit data with impedance-controlled traces. The WP#, CE#, ALE, CLE, RIO, and R/B pins must be tied or driven correctly to avoid bus contention during power-up. This page synthesizes real-time distributor pricing, verified drop-in alternatives, and practical design notes that go beyond the manufacturer datasheet.

見積もり お問い合わせ
MT29F8G16ADBDAH4-IT:D - 8Gb x16 SLC NAND Flash, 1.8V | Micron
MT29F8G16ADBDAH4-IT:D

MT29F8G16ADBDAH4-IT:D - 8Gb x16 SLC NAND Flash, 1.8V | Micron

The Micron MT29F8G16ADBDAH4-IT:D is an 8Gb SLC NAND Flash memory device organized as 512M x 16 bits, housed in a 63-ball VFBGA (9x11 mm) package with parallel interface and 25 ns access time. It operates from a 1.8V supply (1.7V min / 1.95V max) across an industrial temperature range of -40C to +85C, and uses Micron's reliable single-level-cell NAND architecture for high endurance and predictable read/write performance. An SLC (Single-Level Cell) NAND flash is a non-volatile memory that stores one bit per memory cell, providing higher write endurance, faster write speeds, and longer data retention than MLC/TLC counterparts. NAND Flash sits below NOR Flash in the storage hierarchy, optimized for high-density sequential and page-based access in embedded systems, automotive infotainment, industrial gateways, and boot/media storage subsystems where reliability and bit-level integrity outweigh raw cost-per-bit. Key features include 8Gbit density (1 Gbyte), x16 data bus for high-throughput parallel access, ONFI-compatible asynchronous interface, internal data ECC support per page, and a 63-VFBGA surface-mount package suitable for compact, reflow-solderable embedded designs. The device supports standard NAND command set (read, program, erase, status read, ID read) and operates from a single 1.8V Vcc rail. The MT29F8G16ADBDAH4-IT:D uses Micron's 4Gb/8Gb/16Gb NAND flash die platform, leveraging proven floating-gate SLC cell technology and a mature CMOS process. Page size is typically 2048 bytes + 64 bytes spare (for x16), supporting partial-page programming and block erase. The parallel interface allows direct connection to microcontrollers, application processors, and FPGAs without external glue logic. Typical applications include automotive infotainment and telematics storage, industrial control/IIoT gateways, networking equipment (switches/routers for OS images and logs), point-of-sale terminals, medical data recorders, and Linux/Android embedded boot or mass-storage subsystems requiring reliable, industrial-temperature non-volatile memory. When designing with this part, ensure proper signal integrity on the parallel data bus, respect Vcc ramp sequencing, and implement software or hardware ECC for data integrity. The compact 9x11 mm VFBGA footprint simplifies PCB layout but requires careful fan-out and via-in-pad or microvia design for reliable manufacturability. This page synthesizes distributor pricing, drop-in compatible alternatives across Micron and competing vendors, application guidance, and practical PCB/thermal design notes beyond the manufacturer datasheet to accelerate your embedded storage design.

見積もり お問い合わせ
MT40A1G16KNR-075-IT-E - 16Gb DDR4-2666 1Gx16 SDRAM | Micron
MT40A1G16KNR-075-IT-E

MT40A1G16KNR-075-IT-E - 16Gb DDR4-2666 1Gx16 SDRAM | Micron

The Micron MT40A1G16KNR-075-IT-E is a 16-Gbit DDR4 SDRAM organized as 1G words × 16 bits, packaged in a 96-ball Fine-Pitch BGA (FBGA, 7.5 mm × 13.5 mm × 1.1 mm) with a -075 speed bin corresponding to DDR4-2666 (1600 MHz clock, 2666 MT/s data rate). It operates from a 1.2 V nominal VDD supply (1.14 V to 1.26 V per Micron's datasheet) with VDDQ at 1.2 V and a VPP supply of 2.5 V, and uses a dual-die-package (DDP) stack to reach 16 Gb density in a single chip. A DDR4 SDRAM is a synchronous dynamic random-access memory that quadruples the data rate of DDR3 by transferring data on both clock edges and using a pseudo-open-drain SSTL_12 I/O standard with on-die termination. As a member of the broader DRAM family, DDR4 SDRAM occupies the mainstream volatile main-memory segment used in servers, workstations, embedded computing platforms, and high-end networking gear, sitting between the LPDDR/low-power DRAM family (mobile) and HBM (high-bandwidth, high-end accelerators) in the JEDEC memory taxonomy. Key features include a 1.07 GHz / 1.33 GHz maximum clock frequency per Micron product pages, 19 ns CAS latency timing budget, on-die temperature sensor with automatic self-refresh, ZQ calibration for output-driver impedance trimming, and a programmable MR (mode-register) interface that supports fine-grained timing, refresh, and voltage tuning. The IT industrial temperature grade spans 0 °C to +95 °C (this is the E-grade base temperature; see validation for the IT industrial note), and the device is JEDEC JESD79-4 DDR4 compliant. Architecturally, the die uses Micron's 20 nm-class DRAM process and integrates 8 internal banks with bank-grouping for improved throughput. The 16-bit data interface and ×16 organization make the part well suited for high-bandwidth applications where parallel channels are limited, such as AI accelerator boot memory and FPGA-attached DRAM buffers. Typical applications include AI server boot memory, BMC/management-controller DRAM, storage-controller cache (SAS/NVMe RAID HBAs), embedded computing modules, FPGA SoC attached memory, and service-spare DDR4 inventory for hyperscaler maintenance. When designing with this part, observe the PCB routing rules in Micron's TN-40-series application notes: maintain 90 Ω differential impedance on the DQ/DQS pairs, length-match the byte lane within ±25 ps, and provide a clean 2.5 V VPP rail with at least 10 µF of decoupling near each device. This page synthesizes distributor pricing, drop-in same-package and cross-brand alternatives, and PCB design guidance not found in the manufacturer datasheet alone.

見積もり お問い合わせ
MT40A1G8AG-062E AUT:R - 8Gb DDR4-3200 x8 78-FBGA | Micron
MT40A1G8AG-062E AUT:R

MT40A1G8AG-062E AUT:R - 8Gb DDR4-3200 x8 78-FBGA | Micron

The Micron MT40A1G8AG-062E AUT:R is an automotive-grade 8 Gbit DDR4 SDRAM organized as 1G x 8, housed in a 78-ball Fine-Pitch Ball Grid Array (FBGA, 7.5 x 11 mm) and qualified to AEC-Q100 for in-vehicle electronic systems. It operates from a 1.2 V VDD/VDDQ supply and clocks up to 1600 MHz (DDR4-3200 data rate), delivering a maximum access time of 19 ns. The device ships in Tape-and-Reel packaging with the AUT suffix denoting automotive temperature grade and the R suffix denoting the reel pack orientation. DDR4 (Double Data Rate 4) SDRAM is the fourth generation of synchronous DRAM, succeeding DDR3 by doubling the minimum data rate, lowering the I/O voltage to 1.2 V from 1.5 V, and introducing bank-grouping for higher effective bandwidth at lower power. Within the broader memory hierarchy, DDR4 sits between LPDDR4 mobile DRAM and HBM stacked memory, targeting compute-heavy platforms that need high throughput and moderate cost. The 1G x 8 organization gives one byte-wide data bus plus an 8-bit-deep chip ID, which is the most common building block for populating byte lanes in controller-driven ECC or non-ECC systems. Key features of this part include on-die termination (ODT), write leveling, ZQ calibration, an integrated temperature sensor, and a bank-group architecture that lowers latency at high burst rates. Automotive qualification to AEC-Q100, support for -40C to +95C case temperature, and PPAP documentation make the AUT suffix suitable for ADAS, infotainment, and digital cockpit SoCs. Internally, the die uses a 20 nm-class process with a 16-bank / 4-bank-group architecture and a high-speed pseudo-open-drain POD interface, which lowers switching noise and enables data rates of 3200 MT/s while staying within 1.2 V I/O. A parity-based command/control path protects against command bus errors during fast burst operations. On-system calibration of ODT impedance, VrefDQ, and write leveling is handled by the host controller in conjunction with the part's MR registers. Typical applications for the MT40A1G8AG-062E AUT:R include automotive ADAS controllers, digital cockpit and infotainment SoCs, in-vehicle networking gateways, and ruggedized industrial edge platforms. The AEC-Q100 qualification also makes it a viable drop-in for fleet management and telematics modules where commercial-grade DRAM would otherwise require additional environmental re-qualification. When laying out the PCB, follow Micron's 78-ball FBGA escape pattern, provide matched-length data byte lanes, and place the 240 ohm ZQ reference resistor within 5 mm of the package ball. Maintain proper decoupling - 0.1 uF and 10 uF capacitors per VDD/VDDQ rail - to keep switching noise within DDR4 spec during write bursts.

見積もり お問い合わせ
MT40A1G8SA-075:E - 8Gb DDR4 SDRAM 1.33GHz | Micron
MT40A1G8SA-075:E

MT40A1G8SA-075:E - 8Gb DDR4 SDRAM 1.33GHz | Micron

The Micron MT40A1G8SA-075:E is a high-performance DDR4 SDRAM component organized as 1G x 8, providing 8Gbit of memory density. It operates at a clock speed of 1.33 GHz (DDR4-2666) with a parallel interface, housed in a compact 78-ball FBGA package measuring 7.5x11 mm. This device is designed for a wide range of computing, networking, and industrial applications requiring high bandwidth and low power consumption. DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both rising and falling edges of the clock signal, effectively doubling the data rate. It is the fourth generation of DDR memory, succeeding DDR3, and offers higher speed, lower operating voltage (1.2V), and improved power efficiency. DDR4 is a critical component in modern computing systems, servers, and embedded devices, forming the main memory hierarchy alongside storage and cache. Key features of the MT40A1G8SA-075:E include a supply voltage of VDD = VDDQ = 1.2V ±60mV, with VPP at 2.5V (-125mV, +250mV). It supports on-die, internal, adjustable VREFDQ generation and 1.2V pseudo open-drain I/O. The device offers a refresh time of 8192 cycles with temperature-dependent refresh rates: 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, and 16ms at >95°C to 105°C. Additional features include write leveling, dynamic on-chip termination, CRC function, and data mask function, ensuring signal integrity and reliable operation. Technically, the MT40A1G8SA-075:E utilizes Micron's advanced DRAM process technology, achieving high density and performance while maintaining low power. The 78-ball FBGA package with a 7.5x11 mm footprint is optimized for space-constrained PCB designs, offering excellent thermal and electrical characteristics. The device supports a data rate of 2666 MT/s, providing a peak bandwidth of 21.3 GB/s per module (when paired with a 64-bit bus). Typical applications include high-performance computing, servers, networking equipment (routers, switches), and industrial automation systems. Its high speed and reliability make it suitable for memory-intensive tasks such as data analytics, virtualization, and real-time processing. The low operating voltage contributes to energy-efficient designs, crucial for data centers and battery-powered devices. When designing with this component, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the Micron datasheet to minimize signal integrity issues. The device requires a stable 1.2V supply and careful attention to the VPP rail for optimal performance.

見積もり お問い合わせ
MT40A1G8WE-075E - 8Gb DDR4 SDRAM 1.33GHz | Micron
MT40A1G8WE-075E

MT40A1G8WE-075E - 8Gb DDR4 SDRAM 1.33GHz | Micron

The Micron MT40A1G8WE-075E is a high-performance DDR4 SDRAM component organized as 1G x 8, providing 8Gbit of memory density. It operates at a clock speed of 1.33 GHz (DDR4-2666) and is housed in a compact 78-ball FBGA (8x12mm) package, making it suitable for space-constrained applications requiring high bandwidth and low power consumption. DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is the fourth generation of DDR memory, offering higher speed and lower power than its predecessors. It uses a 1.2V supply (VDD and VDDQ) with a separate 2.5V VPP for wordline boost, and features on-die termination (ODT), internal VREFDQ generation, and pseudo-open-drain I/O. DDR4 achieves data rates up to 3200 MT/s, with the -075E speed grade indicating 2666 MT/s operation. Key features include a refresh time of 8192 cycles at TC temperature range: 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, and 16ms at >95°C to 105°C. The device supports on-die, internal, adjustable VREFDQ generation and 1.2V pseudo-open-drain I/O. It is available in industrial temperature grades (AIT) and standard temperature grades, with options for automotive (AEC-Q100) qualification in some variants. Technically, the MT40A1G8WE-075E utilizes Micron's advanced DRAM process technology, achieving high density with low power consumption. The 78-ball FBGA package provides excellent thermal and electrical performance, with a ball pitch of 0.8mm. The device supports burst lengths of 8 and 4, and features programmable CAS latency, additive latency, and write recovery time. Typical applications include servers, networking equipment, high-performance computing, and embedded systems requiring high memory bandwidth. The 1G x 8 organization is ideal for error-correcting code (ECC) modules and systems with multiple memory channels. When designing with this component, ensure proper decoupling capacitors near the VDD and VDDQ pins, and follow Micron's layout guidelines for DDR4 routing to maintain signal integrity at 2666 MT/s.

見積もり お問い合わせ