MT40A1G8AG-062E AUT:R - 8Gb DDR4-3200 x8 78-FBGA | Micron
部品番号: MT40A1G8AG-062E AUT:R ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $12.85 | $12.85 |
| 10 | $11.62 | $116.20 |
| 100 | $10.04 | $1,004.00 |
| 500 | $8.75 | $4,375.00 |
| 1,000 | $7.82 | $7,820.00 |
| 3,000 | $6.95 | $20,850.00 |
MT40A1G8AG-062E AUT:R 概要
DDR4 (Double Data Rate 4) SDRAM is the fourth generation of synchronous DRAM, succeeding DDR3 by doubling the minimum data rate, lowering the I/O voltage to 1.2 V from 1.5 V, and introducing bank-grouping for higher effective bandwidth at lower power. Within the broader memory hierarchy, DDR4 sits between LPDDR4 mobile DRAM and HBM stacked memory, targeting compute-heavy platforms that need high throughput and moderate cost. The 1G x 8 organization gives one byte-wide data bus plus an 8-bit-deep chip ID, which is the most common building block for populating byte lanes in controller-driven ECC or non-ECC systems.
Key features of this part include on-die termination (ODT), write leveling, ZQ calibration, an integrated temperature sensor, and a bank-group architecture that lowers latency at high burst rates. Automotive qualification to AEC-Q100, support for -40C to +95C case temperature, and PPAP documentation make the AUT suffix suitable for ADAS, infotainment, and digital cockpit SoCs.
Internally, the die uses a 20 nm-class process with a 16-bank / 4-bank-group architecture and a high-speed pseudo-open-drain POD interface, which lowers switching noise and enables data rates of 3200 MT/s while staying within 1.2 V I/O. A parity-based command/control path protects against command bus errors during fast burst operations. On-system calibration of ODT impedance, VrefDQ, and write leveling is handled by the host controller in conjunction with the part's MR registers.
Typical applications for the MT40A1G8AG-062E AUT:R include automotive ADAS controllers, digital cockpit and infotainment SoCs, in-vehicle networking gateways, and ruggedized industrial edge platforms. The AEC-Q100 qualification also makes it a viable drop-in for fleet management and telematics modules where commercial-grade DRAM would otherwise require additional environmental re-qualification.
When laying out the PCB, follow Micron's 78-ball FBGA escape pattern, provide matched-length data byte lanes, and place the 240 ohm ZQ reference resistor within 5 mm of the package ball. Maintain proper decoupling - 0.1 uF and 10 uF capacitors per VDD/VDDQ rail - to keep switching noise within DDR4 spec during write bursts.
ドロップイン代替品: MT40A1G8AG-062E AUT:R — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
クイック比較ツール — 並列比較する代替部品を選択:
MT40A1G8AG-062E AIT:R
✅ ドロップイン📋 参考代替品（カタログ未掲載）
MT40A1G8AG-062E AUT:R TR
✅ ドロップイン📋 参考代替品（カタログ未掲載）
MT40A1G8AG-062E-AUT
✅ ドロップイン📋 参考代替品（カタログ未掲載）
MT40A1G8AG-062E:R
✅ ドロップイン📋 参考代替品（カタログ未掲載）
MT40A1G8AG-062E:R
✅ ドロップイン📋 参考代替品（カタログ未掲載）
MT40A1G8AG-062E AUT:R 最大定格＆電気的特性
| メモリタイプ | DDR4 SDRAM |
| メモリサイズ | 8 Gbit (1G x 8) |
| Memory Organization | 1G x 8 |
| 最大クロック周波数 | 1600 MHz |
| データレート | DDR4-3200 MT/s |
| Maximum Access Time | 19 ns |
| Supply Voltage VDD/VDDQ | 1.2 V (typ) |
| インターフェースタイプ | Parallel (POD 1.2V) |
| パッケージ | 78-FBGA (7.5 x 11 mm) |
| Operating Temperature Grade | Automotive (AUT) -40C to +95C case |
| Automotive Qualification | AEC-Q100 |
| On-Die Termination | Yes (ODT) |
| Write Leveling | Yes |
| ZQ Calibration | Yes (240 ohm reference) |
| 実装タイプ | Surface Mount (BGA) |
| Packaging | Tape & Reel (R suffix) |
MT40A1G8AG-062E AUT:R 78-fbga (7.5 x 11 mm) ピン配置ガイド
MT40A1G8AG-062E AUT:R (78-fbga (7.5 x 11 mm) パッケージ) のピン配置。 このデジタルICには、GPIO、通信インターフェース (UART、SPI、I2C)、および電源ピンが含まれています。代替ピン機能と設定オプションについては、メーカーのデータシートを参照してください。組み込みシステム設計とPCBレイアウトに不可欠です。
詳細なピン配置データはありません: MT40A1G8AG-062E AUT:R.
詳細は データシート をご参照ください。
主な用途
MT40A1G8AG-062E AUT:R の用途: 6 件s: Automotive ADAS Controllers, Digital Cockpit and Infotainment SoCs, In-Vehicle Networking Gateways, Ruggedized Industrial Edge Platforms, Telematics and Fleet Management Modules, Automotive Camera and Vision Modules.
Automotive ADAS Controllers
Why the MT40A1G8AG-062E AUT:R fits ADAS: with 8 Gbit density in a 1G x 8 organization and DDR4-3200 data rate (3200 MT/s), the part supplies the high-bandwidth working memory required by vision and radar SoCs. The -40C to +95C case temperature range and AEC-Q100 qualification let it survive under-hood, behind-windshield, and behind-fascia mounting, where commercial DRAM would fail cold-start or thermal-cycling tests. Used as the SoC-attached DRAM pool, the device supports sustained 25.6 GB/s reads across the 64-bit host bus while keeping VDD/VDDQ at 1.2 V to minimize 12 V battery drain. Compared with lower-grade DDR4, the AUT:R variant delivers AEC-Q100 PPAP documentation required by OEM programs.
おすすめ
Digital Cockpit and Infotainment SoCs
Why it fits the digital cockpit: the 78-ball FBGA (7.5 x 11 mm) and 1.2 V I/O rail let board designers place two ranks in a stacked configuration to feed high-resolution multi-display SoCs without thermal-stress issues. DDR4-3200 enables 4K UI composition, instrument-cluster graphics, and rear-seat entertainment simultaneously. The AEC-Q100 qualification and -40C to +95C case temperature let the same BOM carry the system through cold-start mornings and summer cabin temperatures. On-die termination, write leveling, and ZQ calibration simplify the controller's training sequence and reduce PCB-layer count.
おすすめ
In-Vehicle Networking Gateways
Why it fits gateway ECUs: 8 Gbit is enough to buffer CAN-FD, automotive Ethernet, and SOME/IP frames before routing to domain controllers, and DDR4-3200 keeps latency deterministic under burst loads. The AEC-Q100-grade DRAM also lets gateway ECUs share a single BOM across vehicle variants that differ in features, simplifying supply. Compared with LPDDR4, DDR4 standard package allows higher-density stacking and more straightforward board-level rework during platform bring-up.
おすすめ
Ruggedized Industrial Edge Platforms
Why it fits the edge: industrial PCs, machine-vision controllers, and robotics platforms exposed to factory-floor temperature swings benefit from the AUT-grade -40C to +95C case range and AEC-Q100 reliability stress. DDR4-3200 with on-die termination keeps signal integrity on long board traces inside metal enclosures. The 78-ball FBGA 7.5 x 11 mm footprint is mechanically robust against vibration, unlike larger thin-package DRAMs.
おすすめ
Telematics and Fleet Management Modules
Why it fits telematics: cellular V2X modules and fleet trackers need compact, automotive-qualified DRAM that survives -40C cold-soak and +95C under-dash ambient. DDR4-3200 supports simultaneous LTE/5G modem buffering, GNSS processing, and over-the-air update staging. The 1G x 8 organization simplifies ECC or non-ECC configuration for system integrators building platforms on the same SoC family.
おすすめ
Automotive Camera and Vision Modules
Why it fits camera modules: surround-view and driver-monitoring cameras need high-throughput memory for ISP-to-SoC hand-off. The MT40A1G8AG-062E AUT:R delivers DDR4-3200 bandwidth on a compact 78-ball FBGA, fitting inside the camera housing next to the image sensor. AEC-Q100 grading ensures the memory survives the long thermal cycles of in-cabin and behind-mirror mounting.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: MT40A1G8AG-062E AUT:R — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | MT40A1G8AG-062E AIT:R | MT40A1G8AG-062E AUT:R TR | MT40A1G8AG-062E-AUT | MT40A1G8AG-062E:R |
|---|---|---|---|---|---|
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Alliance Memory |
| Package | 78-FBGA (7.5x11) | 78-FBGA (7.5x11) - same | 78-FBGA (7.5x11) - same | 78-FBGA (7.5x11) - same | 78-FBGA (7.5x11) - same |
| Density | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit |
| Organization | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 |
| Data Rate | DDR4-3200 MT/s | DDR4-3200 MT/s | DDR4-3200 MT/s | DDR4-3200 MT/s | DDR4-3200 MT/s |
| Temperature Grade | Automotive -40C to +95C case | Industrial -40C to +85C | Automotive -40C to +95C case | Automotive -40C to +95C case | Commercial 0C to +95C |
| AEC-Q100 Qualification | Yes | No (industrial only) | Yes | Yes | No (commercial only) |
| Packaging Form | Tape & Reel (R) | Tape & Reel (R) | Tape & Reel (TR) | Tray | Tray / Reel |
主な差別化要因
- Automotive AEC-Q100 qualification with -40C to +95C case temp （vs MT40A1G8AG-062E AIT:R)
- Tape-and-reel packaging for high-volume automotive production （vs MT40A1G8AG-062E-AUT (tray))
- 8 Gbit DDR4-3200 density in compact 78-ball FBGA （vs MT40A1G8AG-062E:R (Alliance Memory))
設計ノート
Escape the 78-ball FBGA using Micron's recommended 4-layer ball pattern. Provide matched-length traces within each DQ byte lane (delta <5 ps), keep the 240 ohm 1 percent ZQ reference resistor within 5 mm of the ZQ ball, and add 0.1 uF plus 10 uF decoupling on every VDD/VDDQ rail.
Estimated: at sustained DDR4-3200 reads the part dissipates roughly 0.6-0.8 W. With the standard FBGA theta-JA near 35 C/W, junction-to-ambient rise is ~25 C at room temperature. Maintain the -40C to +95C case limit and provide copper pour under the BGA for proper heat spreading.
Do not confuse the AUT (automotive) suffix with AIT (industrial) or the plain R-grade. Only AUT variants carry AEC-Q100 PPAP documentation. Mixing in a commercial DDR4 during platform bring-up can later force a costly re-qualification when the OEM demands AEC-Q100 documentation.
コンプライアンス情報
AUT suffix confirms AEC-Q100 qualification per Micron's automotive part catalog. RoHS and REACH compliant per Micron product page; halogen-free status not explicitly listed.
