MOSFET
製品 (1294)
IPTG025N15NM6ATMA1 - 150V OptiMOS 6 N-Channel MOSFET | Infineon
The Infineon IPTG025N15NM6ATMA1 is an N-channel power MOSFET built on the OptiMOS 6 150 V technology platform, rated for 150 V drain-source voltage and capable of 26 A continuous drain current at 25 C ambient (264 A pulsed at case), housed in the surface-mount PG-HSOG-8-1 (TOLG) package with a 30 percent smaller footprint than the legacy D2PAK. As a member of Infineon's OptiMOS 6 150 V normal-level family, this device targets both high-frequency and low-frequency switching topologies in hard- and soft-switched converters. What is a power MOSFET? A metal-oxide-semiconductor field-effect transistor (MOSFET) is a voltage-controlled three-terminal switch used for power conversion. The N-channel variant conducts when a positive gate-source voltage is applied, and the 150 V class sits in a hypernym hierarchy of low-voltage MOSFET (<60 V) -> standard-voltage MOSFET (60-200 V) -> high-voltage MOSFET (>500 V) -> power discrete semiconductor. Within Infineon's portfolio, this part belongs to the OptiMOS 6 family, which is optimized for telecom, server, solar, and e-mobility applications. Key features include 2.5 mOhm typical on-state resistance (RDS(on)) at 10 V VGS, a low gate charge Qg that lowers switching losses, and a monolithically integrated Schottky-like diode body for reduced reverse-recovery charge. The PG-HSOG-8-1 package delivers a thermal resistance (junction-to-case) suitable for 395 W power dissipation at TC = 25 C, enabling compact SMD designs that previously required D2PAK footprints. Technical depth: the OptiMOS 6 150 V process uses Infineon's latest trench MOSFET cell architecture with an optimized source-body epitaxy. Compared to OptiMOS 5, this part offers improved figure-of-merit (RDS(on) x Qg) of roughly 30 percent, translating directly into lower conduction and switching losses. The PG-HSOG-8-1 (TOLG) package supports reflow soldering with MSL1 floor life and provides a Kelvin-source connection on pin 4 for gate-drive optimization. Typical applications include 48 V telecom bus converters, synchronous rectification in telecom rectifiers, solar string inverters, e-bike and low-voltage e-mobility motor drives, hot-swap controllers in server 48 V rails, and industrial SMPS half-bridge stages. The 150 V rating provides sufficient margin for 48 V nominal bus systems with transients up to 100 V. Design consideration: ensure the gate-drive voltage reaches at least 10 V for full RDS(on) specification; driving below 6 V can double on-state losses. The exposed pad must be soldered to a copper area of at least 6 cm squared on the drain tab for the rated 395 W dissipation. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
IPW60R037P7XKSA1 - 600V 76A CoolMOS P7 MOSFET | Infineon
The Infineon IPW60R037P7XKSA1 is a 600 V N-channel superjunction power MOSFET from the CoolMOS™ P7 family, rated at 76 A continuous drain current (Tc) and 255 W power dissipation in a through-hole PG-TO247-3 package, with a maximum on-resistance of 37 mOhm at 25 °C. The XKSA1 suffix denotes a tube-package industrial variant of the IPW60R037P7 die, which combines low switching losses with excellent ease-of-use, low ringing tendency, and a wide operating range. The P7 series is the successor to the CoolMOS™ P6 family and is designed for high-frequency, high-efficiency switched-mode power supplies. What is a CoolMOS superjunction MOSFET? A superjunction (SJ) MOSFET is a high-voltage power MOSFET architecture that uses alternating P- and N-doped epitaxial layers to break the traditional silicon limit between on-resistance (RDS(on)) and breakdown voltage (BV_DSS). Compared with conventional planar MOSFETs, SJ devices achieve roughly 5x lower RDS(on) per unit area at the same voltage rating, which directly translates to lower conduction losses, cooler operation, and smaller heatsinks in SMPS, PFC, and inverter designs. As a member of the broader MOSFET -> power semiconductor -> discrete semiconductor taxonomy, CoolMOS P7 specifically targets 500 V–950 V applications where efficiency and ruggedness are critical. Key features include an integrated ultra-fast body diode optimized for hard-switching topologies, a gate threshold of 3.5 V (typ), and a low gate charge (Qg) that minimizes driver losses at high switching frequencies. The device is qualified for industrial-grade operating junction temperatures from -55 °C to +150 °C and is rated for avalanche operation, giving designers additional margin during transient load events. Compared with the prior P6 generation, the P7 platform further reduces output charge (Qoss) and effective output capacitance (Coss(eff)), improving light-load efficiency in resonant and soft-switching converters. Typical applications for the IPW60R037P7XKSA1 include totem-pole PFC, half-bridge and full-bridge LLC converters, solar inverters, telecom rectifier modules, and industrial motor drives. The low Qrr of the integrated body diode also makes it suitable for hard-switched bridge topologies where reverse-recovery losses can dominate. The TO-247-3 package provides a robust mechanical mounting for high-current applications and supports conventional through-hole assembly. When designing with this part, use a low-inductance gate-drive loop and place a 10–100 nF ceramic decoupling capacitor as close to the gate-source terminals as possible. The P7 family is engineered for low ringing at the drain node, but careful PCB layout of the power-loop inductance remains essential to extract the full efficiency benefit. Always operate within the SOA shown in the manufacturer datasheet and derate at high switching frequencies to keep junction temperature within the 150 °C limit.
IPW60R041C6FKSA1 - 600V 77.5A CoolMOS C6 MOSFET | Infineon
The Infineon IPW60R041C6FKSA1 is a 600 V N-channel CoolMOS™ C6 superjunction power MOSFET rated for 77.5 A continuous drain current (Tc) and 481 W power dissipation (Tc), housed in a through-hole PG-TO247-3-1 package. It features an ultra-low on-state resistance of 41 mΩ at 10 V VGS and combines Infineon's superjunction technology with fast switching capability. The C6 generation is engineered for high-efficiency power conversion in industrial, telecom, and consumer SMPS applications. A power MOSFET is a voltage-controlled semiconductor switch used to regulate or convert electrical energy. Superjunction MOSFETs like the CoolMOS family use a charge-compensated vertical structure that breaks the classic silicon limit between on-resistance and breakdown voltage, enabling lower RDS(on) per unit area than conventional planar MOSFETs. This places the IPW60R041C6FKSA1 in the power MOSFET → superjunction MOSFET → high-voltage switching device hierarchy. Key features include 600 V drain-source breakdown voltage, 41 mΩ maximum RDS(on) at VGS = 10 V, integrated fast body diode for hard-switched topologies, low gate charge Qg, and excellent dv/dt ruggedness. The device is optimized for hard-switching PFC, CCM PFC, and LLC half-bridge stages where conduction and switching losses both dominate the thermal budget. The avalanche-rated body diode simplifies bridge-tied converter design. The CoolMOS C6 technology uses a charge-compensation principle with optimized cell pitch, achieving a figure-of-merit (FOM) of RDS(on) × Qg in the range typical for high-frequency PFC stages. Compared with C3-series predecessors, C6 offers reduced gate charge and improved light-load efficiency, which is critical for meeting 80 PLUS and ErP efficiency standards in PC and server SMPS designs. Typical applications include server and telecom switched-mode power supplies (SMPS), power factor correction (PFC) stages, solar inverters, industrial motor drives, and welding equipment. The wide 600 V rating also suits universal-input (85-265 VAC) PFC and main switching stages in 1-3 kW power supplies. When designing with this device, attention to gate-drive voltage (recommended 10 V) and PCB layout inductance is critical. The TO-247 package allows robust through-hole mounting with screw heatsinks, but the thermal pad and creepage distances must be observed for high-voltage isolation. A small RC snubber (typically 10-100 Ω + 1-10 nF) is recommended at the drain node to suppress ringing caused by package and circuit inductance in hard-switched bridges. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, helping engineers accelerate their high-voltage power supply design cycle.
IPW60R080P7XKSA1 - 600V CoolMOS P7 N-Channel MOSFET | Infineon
The Infineon IPW60R080P7XKSA1 is a 600 V N-channel power MOSFET from the CoolMOS P7 family, housed in a through-hole PG-TO247-3 (TO-247) package. It delivers 37 A continuous drain current (Tc) with 129 W power dissipation, a typical RDS(on) of 69 mΩ at 10 V VGS, and is the direct successor to the 600 V CoolMOS P6 series. This part is supplied in tube packaging with the XKSA1 suffix code. A power MOSFET is a voltage-controlled semiconductor switch used to efficiently switch or amplify electrical signals in power conversion circuits. Within the broader taxonomy it belongs to the discrete semiconductor family, specifically the FET (field-effect transistor) hypernym, then MOSFET (metal-oxide-semiconductor FET), then high-voltage superjunction MOSFET family, and finally the CoolMOS P7 product line. Superjunction MOSFETs like the P7 use a charge-balance structure that simultaneously reduces on-state resistance and switching losses - a breakthrough versus conventional planar MOSFETs at 600 V. Key features include the integrated gate protection, integrated snubber-less design, 0.4 V VGS(th) low threshold voltage, and best-in-class RDS(on) per package area for this voltage class. The CoolMOS P7 platform also brings an integrated protection diode and ease-of-use characteristics such as simple gate drive requirements, making it well-suited to high-frequency switched-mode power supplies. Technically the IPW60R080P7XKSA1 uses Infineon's 600 V superjunction technology with optimized cell pitch. The avalanche ruggedness and dv/dt ruggedness allow operation in hard-switching and zero-voltage-switching topologies. With a typical Coss (output capacitance) and low gate charge, switching losses are reduced at typical 100 kHz to 200 kHz switching frequencies found in SMPS designs. Typical applications include PFC stages, LLC and quasi-resonant flyback converters in telecom/server SMPS, solar inverters, EV charging, and industrial motor drives. The wide 600 V rating also fits off-line converters from rectified 230 V AC rails. When designing with this part, pay attention to gate driver voltage and dv/dt layout: although the part is rugged, minimizing the drain-source dv/dt with proper gate resistance and PCB layout reduces EMI and ringing.
IPW60R180P7XKSA1 - 600V CoolMOS P7 MOSFET, 180mOhm, 18A | Infineon
The Infineon IPW60R180P7XKSA1 is a 600V N-channel power MOSFET from the CoolMOS P7 superjunction family, featuring a maximum on-resistance of 180 mOhm and continuous drain current of 18 A (Tc) in a 3-pin PG-TO247-3 (TO-247) through-hole package with a 72W (Tc) power dissipation rating. The XKSA1 suffix denotes the tube-packaged industrial grade variant, which combines the fast-switching benefits of superjunction technology with class-leading ease of use, reduced gate charge, and integrated protection features such as an integrated gate resistor. A superjunction MOSFET is a power-semiconductor device that uses a deep-pillar charge-balance structure to break the silicon limit of conventional planar MOSFETs, yielding far lower on-state resistance per unit area at high blocking voltages. CoolMOS P7 specifically targets switched-mode power supplies, power-factor correction, and motor drive topologies, sitting in the broader hierarchy of power MOSFET -> discrete semiconductor -> power management device. Key features include an ultra-low figure-of-merit (RDS(on) x Eoss), a fast body diode with low Qrr, a wide gate-drive compatibility range (10V typical), and an operating junction temperature range of -55C to +150C. The device uses Infineon's 7th-generation superjunction platform, which succeeds the CoolMOS P6 series with a tighter Rdson distribution and lower gate-charge loss. The TO-247-3 package provides a tab/lead 3-pin configuration (Gate, Drain, Source) with a large metal tab that doubles as the drain connection and a thermal pad, achieving a typical thermal resistance of around 0.83 C/W junction-to-case (per the P7 family datasheet), which simplifies heatsink design in high-current continuous-conduction applications. Typical applications include solar inverters, telecom and server SMPS power-factor-correction stages, EV on-board chargers, industrial motor drives, welding equipment, and UPS systems. The combination of 600V breakdown and 18A current makes the part especially well-suited to bridgeless PFC, LLC half-bridge primary, and hard-switching flyback converters in the 1-5 kW power range. When designing with this device, place the gate driver within 2 cm of the gate pin to suppress parasitic turn-on, use a 10-100 kOhm gate-source resistor for safe turn-off, and ensure the heatsink is sized for at least 60% of the 72W rated dissipation to keep Tj well below 125C at full load. Unlike planar MOSFETs, the P7 has a much softer switching trajectory, so RC snubbers are typically unnecessary. This page synthesizes distributor pricing, drop-in same-brand and cross-brand alternatives, and practical design notes not consolidated on the manufacturer datasheet alone.
IPW60R190C6FKSA1 - 600V CoolMOS C6 MOSFET 190mΩ TO-247 | Infineon
The Infineon IPW60R190C6FKSA1 is an N-channel 600 V CoolMOS™ C6 power MOSFET housed in a TO-247-3 (PG-TO247-3-1) through-hole package. According to the verified Infineon product page, it delivers a 190 mΩ maximum on-resistance (RDS(on)) and supports continuous drain current up to 20.2 A at case temperature (Tc), with a power dissipation rating of 151 W at Tc. The C6 generation combines Infineon's superjunction (SJ) architecture with a low gate charge and a 600 V drain-source voltage rating suited to off-line switch-mode power supplies. A power MOSFET is a voltage-controlled three-terminal transistor that switches or amplifies current between its drain and source terminals when a sufficient gate-source voltage is applied. CoolMOS is Infineon's superjunction MOSFET family, which trades the exponential Rsp(on) vs. breakdown-voltage relationship of planar MOSFETs for a near-linear one, dramatically reducing conduction loss in 500-900 V applications. Within the discrete semiconductor hierarchy, this part sits between the parent category (MOSFET) and its application superclass (switch-mode power supply rectifier/switch). The C6 generation specifically targets hard-switched PFC and LLC topologies where low switching loss and avalanche ruggedness matter. Key features include a low RDS(on) of 190 mΩ (max), a typical gate charge of approximately 63 nC, an integrated body diode with reverse recovery suited for bridge topologies, and a wide operating junction temperature range up to 150 °C. The C6 series also adds an improved dv/dt immunity and lower EOSS compared to C3 predecessors. The TO-247 package offers a thermal resistance around 0.83 K/W (junction-to-case), enabling high continuous power dissipation when mounted to a heatsink. Technically, the device is built on Infineon's superjunction charge-compensation principle, which uses alternating P/N columns in the drift region to enable a thinner, lower-resistance epitaxial layer at a given voltage rating. The result is a lower specific on-resistance (Rsp(on)) per unit area and faster switching versus planar 600 V MOSFETs. The C6 generation further optimizes the source-cell layout to reduce gate charge and improve body-diode softness, which simplifies design in hard-switched bridge converters. Typical applications include 600 V-class switch-mode power supplies (SMPS), power-factor correction (PFC) boost stages, LLC half-bridge resonant converters, solar inverters, induction-heating converters, and industrial welding equipment. The wide VDS rating and rugged avalanche performance make it a strong fit for off-line converters targeting ENERGY STAR and 80 PLUS efficiency levels. Design consideration: at high line (e.g. 400 VDC bus), switching losses dominate; gate-drive tuning to a 10-12 V gate swing with a small external gate resistor minimizes turn-on loss without creating excessive dv/dt ringing. Heatsink sizing should use the manufacturer's thermal-resistance curve rather than the nominal 0.83 K/W because real-mount conditions degrade the junction-to-ambient figure. This page synthesizes distributor pricing snapshots from DigiKey and Octopart, drop-in parts from the same TO-247-3 footprint, and practical application notes that go beyond what the manufacturer datasheet block diagram alone offers.
IPW65R041CFD - 650V 41mOhm 68.5A CoolMOS MOSFET | Infineon
The Infineon IPW65R041CFD is a 650 V N-channel CoolMOS CFD2 superjunction power MOSFET with 41 mOhm on-resistance and 68.5 A continuous drain current rating (at Tc), housed in a through-hole PG-TO247-3 package. A power MOSFET is a voltage-controlled semiconductor switch used to regulate or switch electrical power in circuits. Within the power management hierarchy, superjunction MOSFETs such as Infineon CoolMOS sit at the high-voltage end of the MOSFET family, using charge-balanced vertical structures to achieve far lower on-resistance per die area than conventional planar MOSFETs at 500 V to 950 V class ratings. Key features of the IPW65R041CFD include an extremely low figure-of-merit combining RDS(on) with gate charge and output charge (EOSS), an integrated fast body diode for hard- and soft-switching topologies, and a 500 W power dissipation rating at a case temperature of 25 C per DigiKey listings. The low 41 mOhm on-resistance minimizes conduction losses in high-current paths, while the low gate charge of approximately 300 nC reduces gate-drive losses in high-frequency switching converters. Technically, the CFD2 generation is Infineon's second generation of market-leading high-voltage CoolMOS MOSFETs with an integrated fast body diode. The superjunction charge-balance principle allows vertical electric field uniformity, enabling the 650 V breakdown rating together with ultra-low specific on-resistance. According to Infineon, the 600 V CoolMOS CFD7 family is positioned as the successor for new designs, offering further reduced switching and commutation losses. Typical applications include switch-mode power supplies (SMPS), PFC stages, LLC and other resonant converters, solar inverters, welding equipment, and industrial motor drives where 650 V blocking capability, low conduction loss, and a fast body diode are required. When designing with this device, the through-hole TO-247 package requires careful thermal design: mounting to an adequately sized heatsink and using thermally conductive interface material is essential at continuous currents approaching the 68.5 A rating, and gate-drive layout should minimize loop inductance to control ringing. This page synthesizes distributor pricing, drop-in alternatives across same-family and cross-brand sources, and practical design notes not consolidated in the manufacturer datasheet alone.
IPZ40N04S53R1ATMA1 - 40V 40A OptiMOS 5 N-MOSFET | Infineon
The Infineon IPZ40N04S53R1ATMA1 is an N-channel enhancement-mode OptiMOS 5 power MOSFET rated at 40 V VDS, 40 A continuous drain current (Tc) and 71 W power dissipation, housed in a PG-TSDSON-8 surface-mount package. Key specifications include a typical R_DS(on) of 3.1 mOhm at 10 V VGS and 20 A, drive voltages of 7 V and 10 V, and an automotive-grade qualification to AEC-Q101 with a 175 C maximum operating junction temperature. A power MOSFET is a voltage-controlled semiconductor switch that uses the gate electric field to modulate conduction between drain and source. MOSFETs sit within the broader taxonomy of discrete semiconductors (transistor -> FET -> MOSFET -> power MOSFET -> OptiMOS family) and are the workhorse of modern DC-DC conversion, motor drive and hot-swap circuits because of their high switching speed, low conduction loss and easy gate drive. The defining features of this part are its ultra-low 3.1 mOhm on-resistance at 10 V, AEC-Q101 automotive qualification with MSL1 robustness to 260 C peak reflow, 100 % avalanche-tested silicon, and the compact thermally-enhanced PG-TSDSON-8 (5x6 mm) package with exposed pad. Drive is specified at 7 V (max R_DS on) and 10 V (min R_DS on), with a maximum VGS of +/-20 V. These characteristics give engineers a high-current, low-loss switch that fits on small PCBs in space-constrained automotive environments. The OptiMOS 5 cell platform reduces Figure of Merit (R_DS(on) x Qg) versus the prior OptiMOS 3 generation, enabling higher switching frequencies with smaller magnetics in buck or boost converters. The PG-TSDSON-8 exposed pad slashes thermal resistance, supporting the 71 W power budget at moderate copper pours and allowing 40 A operation in confined spaces. Typical applications include 12 V and 24 V automotive ECUs, electric power steering, braking and chassis systems, brushed and brushless DC motor drivers, high-current synchronous rectification, battery management protection FETs, and USB-PD / e-fuse hot-swap front ends. When designing with this part, keep the gate drive loop tight (low-inductance gate-source return) to avoid ringing at the 20 V VGS absolute maximum, and provide sufficient copper pour on the exposed pad to keep junction temperature below the 175 C limit during 100 % avalanche events. This page synthesizes distributor pricing, AEC-Q101 drop-in alternatives and practical layout guidance not collected in any single Infineon document.
IQD005N04NM6ATMA1 - 40V 0.5mΩ N-Ch MOSFET PG-TSON-8-9 | Infineon
The Infineon IQD005N04NM6ATMA1 is an OptiMOS 6 N-channel power MOSFET rated at 40 V drain-source voltage with an industry-leading 0.5 mΩ maximum on-resistance, packaged in the compact surface-mount PG-TSON-8-9 (PQFN 5x6) outline. It delivers 58 A continuous drain current at 25 °C case-equivalent (Ta) conditions and supports pulsed currents up to 610 A, with power dissipation ratings of 3 W (Ta) and 333 W (Tc), making it well suited to high-current, low-loss switching tasks in space-constrained designs. A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is the dominant switching device in modern switched-mode power supplies (SMPS), motor drives, and load-management circuits. Within that hierarchy, an N-channel enhancement-mode power MOSFET uses positive gate drive to create a conducting channel between drain and source. OptiMOS 6 is Infineon's sixth-generation 40 V platform, optimized for lowest conduction and switching losses, and the IQD005N04NM6 sits at the very bottom of its RDS(on) curve, enabling the highest current density in its voltage class. The defining feature is 0.5 mΩ RDS(on) at 10 V VGS, which directly translates to lower I²R losses, cooler operation, and higher efficiency in high-current applications such as 12 V and 24 V bus hot-swap, OR-ing, eFuse, and synchronous rectification. The PG-TSON-8-9 package combines a small 5x6 mm² footprint with an exposed source pad that doubles as the thermal interface, allowing the part to sink 333 W pulsed into a properly designed PCB land pattern and copper plane. Typical applications include SMPS primary and secondary-side switches, high-current DC-DC converter synchronous rectifiers, hot-swap controllers, battery management protection FETs in 12 V/24 V Li-ion packs, motor-drive half-bridges, and USB-PD / e-mobility power-path switches. The 40 V rating gives generous margin above the 24 V industrial bus, while the ultra-low RDS(on) keeps thermal rise manageable in continuous conduction. When designing with this part, focus PCB layout on minimizing source-inductance loop area - place gate drive return directly at the source pad, and use multiple thermal vias under the exposed pad to spread heat into inner copper layers. Compared with previous-generation OptiMOS 5 parts at the same RDS(on), the OptiMOS 6 die reduces output charge (Qoss) and gate charge (Qg), enabling higher switching frequencies and smaller magnetics in SMPS designs. This page synthesizes distributor pricing, parametric drop-in alternatives, and practical PCB-level design guidance that go beyond what is published in the standalone Infineon datasheet.
IQD005N04NM6CGATMA1 - 40V 0.5mΩ OptiMOS 6 MOSFET | Infineon
Infineon IQD005N04NM6CGATMA1 is an N-channel OptiMOS 6 power MOSFET rated 40 V with a typical on-state resistance of 0.5 mΩ, continuous drain current of 58 A at Ta (25 °C ambient) and 610 A pulsed at Tc, supplied in a 9-pin PG-TTFN-9-U02 Source-Down package (5x6 mm²). It is part of Infineon's OptiMOS 6 40 V family optimized for SMPS, motor drive, and battery-powered tools where ultra-low RDS(on) and superior thermal performance are required. Per the verified distributor listings, power dissipation is rated 3 W at Ta and 333 W at Tc. A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to commutate current in power-conversion circuits. Within the broader taxonomy it sits as a sub-category of discrete semiconductors → transistors → MOSFETs → power MOSFETs. OptiMOS is Infineon's proprietary trench-FET process technology, and 'OptiMOS 6' is the sixth-generation refinement targeting the lowest figure-of-merit (FOM = RDS(on) × Qg) in the 40-300 V voltage class, enabling higher switching frequency and lower conduction loss versus prior generations. The headline parameters are: 40 V VDS(max), 0.5 mΩ RDS(on) typical, and a Source-Down 5x6 mm² TTFN footprint with bottom-side source connection that pulls heat directly into the PCB copper. This Source-Down configuration typically doubles the effective cooling area versus standard-source TOLL/TO-Leadless packages. The device supports surface-mount reflow profiles up to MSL1 (260 °C peak). Typical applications include cordless power-tool motor drives, battery management systems (BMS) protection, low-voltage DC-DC converters in server/telecom bricks, USB-PD source and sink switches, and robotic/AGV traction inverters. The Source-Down construction is particularly valuable where PCB-bottom copper area is used as a heatsink without an additional thermal interface material. When designing with this part, verify that PCB copper area is sized to keep TJ below 150 °C at worst-case load. The Source-Down pad layout is unique to this package - it is NOT pin-compatible with standard TOLL (which has a top-side source); substitutes must specify the same Source-Down footprint. Switching-node dv/dt layout (gate-drive loop, power-loop inductance) is critical because 0.5 mΩ devices can switch hundreds of amps in nanoseconds.
IQD009N06NM5ATMA1 - 60V 0.9mΩ N-Ch MOSFET PQFN5x6 | Infineon
The Infineon IQD009N06NM5ATMA1 is an N-channel 60 V power MOSFET in a PQFN 5x6 (PG-TSON-8-9) surface-mount package, with a maximum drain-source on-resistance of 0.9 mΩ and continuous drain current of 42 A (Ta) / 445 A (Tc). It is rated for 3 W power dissipation at ambient and 333 W with case temperature controlled, making it suited to high-current DC-DC and motor-drive stages where conduction loss dominates. The device belongs to Infineon's OptiMOS 5 60 V family, leveraging trench technology to deliver low gate charge and fast switching. A power MOSFET is a voltage-controlled semiconductor switch that conducts current between drain and source when the gate is biased above its threshold. The "N-channel" designation means conduction is by electrons, which gives higher mobility than P-channel equivalents and therefore lower RDS(on) for the same silicon area. N-channel MOSFETs in the 60 V class are the workhorse of synchronous buck converters, half-bridge motor drivers, and OR-ing switches in 12 V / 24 V / 48 V systems, sitting one level below IGBTs (used at higher voltages) and one level above load switches in the power-converter hierarchy. The headline feature is its 0.9 mΩ maximum RDS(on) at VGS = 10 V, which keeps conduction loss to a minimum at high current. Combined with low gate charge, this enables high-frequency switching in SMPS topologies, reducing magnetic component size. The PG-TSON-8-9 PQFN package offers a low-profile 5 mm × 6 mm footprint with an exposed drain pad that doubles as the thermal dissipation path, suiting space-constrained designs such as point-of-load converters, eMobility controllers, and telecom bricks. Typical applications include 48 V-to-low-voltage DC-DC stages in data-center and telecom power, BLDC motor drivers in e-bike and industrial pumps, battery protection in power tools, and OR-ing FETs in redundant supplies. In all these roles, low RDS(on) and small package footprint are the dominant selection criteria. When designing with this part, ensure VGS is driven to at least 10 V for full RDS(on) performance and pay attention to PCB layout to minimize source-inductance ringing. A low-ESR ceramic bypass on the gate driver is critical to avoid false turn-on in half-bridge configurations. This page synthesizes distributor pricing, drop-in alternatives in the same PQFN 5x6 footprint, and design notes not found on the manufacturer datasheet. Specifications below are drawn from the Infineon IQD009N06NM5 datasheet and current distributor listings as of 2026-09-15.
IQD009N06NM5SCATMA1 - 60V 0.9mOhm N-Ch MOSFET | Infineon
The Infineon IQD009N06NM5SCATMA1 is an N-channel enhancement-mode power MOSFET rated at 60 V drain-source voltage with an exceptionally low on-resistance of 0.9 mOhm, housed in the compact 8-pin PG-WHSON-8-U02 (PQFN 5x6) surface-mount package. It is rated for 42 A continuous drain current at 25 C ambient and up to 445 A pulsed drain current at case temperature, with power dissipation of 3 W (Ta) and 333 W (Tc). The part is supplied on tape and reel with a 5x6 mm PQFN outline that includes an exposed thermal pad for low thermal resistance. A power MOSFET is a voltage-controlled semiconductor switch that uses an insulated gate (in this case a trench MOS structure) to modulate current flow between drain and source terminals. MOSFETs sit in the broader discrete-semiconductor taxonomy: MOSFET -> transistor -> discrete semiconductor -> semiconductor. Low-voltage N-channel trench MOSFETs like the IQD009N06NM5 family are the workhorse of synchronous rectification, hot-swap, and high-current DC-DC conversion in switch-mode power supplies (SMPS), motor drives, and battery protection circuits. Key features of the IQD009N06NM5SCATMA1 include 0.9 mOhm maximum RDS(on) at VGS = 10 V, trench-based cell technology that minimizes figure-of-merit (FOM = RDS(on) x Qg), a logic-level capable gate threshold, and an integrated exposed-drain pad that doubles as a low-impedance thermal path. The PQFN 5x6 outline is footprint-compatible with industry-standard PowerPAK-SO-8 / SO-8 alternatives, simplifying PCB layout migration. The IQD009N06NM5 uses Infineon's OptiMOS 5 60 V trench technology, which delivers industry-leading low on-resistance per area through sub-micron cell pitch and a refined epitaxial structure. This technology node targets synchronous rectification, OR-ing, and high-current DC-DC stages where conduction loss dominates total efficiency loss; the low gate charge further reduces switching loss at high frequencies. Typical applications include 48 V telecom and server point-of-load converters, synchronous rectifiers in isolated DC-DC bricks, hot-swap and e-fuse circuits, battery management systems for power tools and e-mobility, motor drive half-bridges, and USB Power Delivery (PD) sinks. The low RDS(on) makes the part especially attractive where thermal budget is tight. When designing with the IQD009N06NM5SCATMA1, place the source pad on a continuous copper pour that serves as both electrical return and primary heat-spreader. Gate-drive traces must be kept short and use a 10 to 100 ohm series gate resistor to suppress ringing; do not exceed the 20 V VGS maximum or the device will be damaged. This page consolidates distributor pricing, drop-in OptiMOS 5 cross-references, and practical PCB layout guidance that complements the manufacturer datasheet, providing actionable information for power-supply and motor-drive design engineers.
IQD016N08NM5ATMA1 - 80V 1.6mΩ OptiMOS 5 N-MOSFET | Infineon
The Infineon IQD016N08NM5ATMA1 is an 80V N-channel power MOSFET built on Infineon's OptiMOS™ 5 technology, featuring an ultra-low typical on-resistance of 1.6 mΩ and housed in a compact PG-TSON-8-9 (PQFN 5x6) surface-mount package. It supports continuous drain currents of 31A at Ta and 323A at Tc, with power dissipation ratings of 3W (Ta) and 333W (Tc), making it well-suited for high-current switching applications in space-constrained PCB designs. The OptiMOS 5 generation delivers an optimized balance of low RDS(on), low gate charge, and fast switching for high-efficiency SMPS and battery management systems. An N-channel power MOSFET is a voltage-controlled semiconductor switch in which the drain-source channel is opened and closed by applying a positive gate-source voltage relative to the source. In the broader taxonomy, the IQD016N08NM5ATMA1 belongs to the discrete MOSFET family within power semiconductors, and within that family to the OptiMOS 5 low-voltage (≤100V) high-performance segment targeting synchronous rectification, hot-swap, and OR-ing functions. Its 80V drain-source rating places it in the mainstream 60-80V bracket used widely in 48V telecom rails, 36V-48V e-mobility auxiliary buses, USB-PD and multi-cell battery applications where headroom above 48V nominal is required for inductive transients. Key features include 1.6 mΩ typical RDS(on) at VGS=10V, an 80V VDS rating, and the thermally enhanced PG-TSON-8-9 package with an exposed top-side cooling pad. The OptiMOS 5 process technology achieves a figure-of-merit (FOM = RDS(on) × Qg) optimized for high-frequency switching, while the PQFN 5x6 footprint enables direct PCB mounting with low parasitic inductance. The device also integrates a monolithic body diode suitable for synchronous rectification, and is rated for operation across the standard industrial temperature range. The IQD016N08NM5ATMA1 is engineered primarily for high-current synchronous rectification stages in switched-mode power supplies (SMPS), where its 1.6 mΩ RDS(on) directly minimizes conduction loss and improves overall converter efficiency. Compared with older OptiMOS 3 or 4 generations, the OptiMOS 5 cell density delivers measurably lower on-resistance per unit silicon area, which translates into smaller footprints or lower losses at equivalent current. The PG-TSON-8-9 package further reduces parasitic source inductance versus DPAK/TO-220 alternatives, supporting cleaner gate-drive waveforms at multi-hundred-kHz switching frequencies. Typical applications include synchronous rectification in 48V telecom and server DC-DC converters, battery management system (BMS) protection and hot-swap FETs in 48V e-mobility systems, high-current OR-ing and load switches on multi-rail power distribution boards, and motor-drive low-side switches in industrial automation. The wide VDS margin also makes it suitable for 36V-72V industrial bus systems. When designing with this device, attention to gate-drive loop inductance and PCB layout of the source-sense (Kelvin) connection is critical—the PG-TSON-8-9 package includes a dedicated source-sense pin to enable clean gate drive and avoid parasitic turn-on in bridge topologies. This page synthesizes distributor stock and pricing, drop-in alternatives, and practical design notes not found in the Infineon datasheet.
IQD020N10NM5CGATMA1 - 100V 2.0mΩ OptiMOS™ 5 N-MOSFET | Infineon
The Infineon IQD020N10NM5CGATMA1 is an N-channel power MOSFET built on Infineon's OptiMOS™ 5 trench technology, rated at 100V drain-source breakdown voltage with a maximum on-resistance of 2.0 mΩ, packaged in a 5x6 mm² PG-TTFN-9-U02 PQFN surface-mount package. It supports continuous drain current of 26A at TA=25°C and 273A pulsed drain current at TC=25°C, with a maximum power dissipation of 333W at TC. What is an N-channel power MOSFET? A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to switch or amplify electrical signals in power electronics. The N-channel variant conducts when its gate is driven above the source by the threshold voltage; it sits inside the broader hypernym hierarchy: MOSFET → transistor → discrete semiconductor → semiconductor. Infineon's OptiMOS™ 5 family optimizes the Figure of Merit (RDS(on) × Qg) to deliver the lowest conduction and switching losses in its class. Key features of the IQD020N10NM5CGATMA1 include 2.0 mΩ maximum RDS(on) at VGS=10V, 100V VDS rating suitable for 48V bus telecom and industrial battery systems, and a compact PQFN 5x6 mm² footprint with an exposed drain pad that doubles as a thermal dissipation surface. The part is optimized for both hard-switching and synchronous-rectification topologies, and its low gate charge minimizes driver losses at high switching frequencies. Architecturally, the device uses Infineon's latest-generation silicon trench process which reduces cell pitch while maintaining avalanche ruggedness. The integrated source-connected sense and Kelvin-source capable pinout in the PG-TTFN-9-U02 package enables clean gate-drive return paths, reducing parasitic turn-on losses in half-bridge and buck-derived topologies. A low thermal resistance of <0.5°C/W (junction-to-case) supports sustained high-current operation when soldered to sufficient copper. Typical applications include SMPS (switched-mode power supplies), battery management systems, synchronous rectification in DC-DC converters, motor drives, and hot-swap / OR-ing controllers. The 100V rating provides ample headroom for 48V telecom rails, 36V-72V industrial battery packs, and USB-PD / e-fuse circuits. Design consideration: Because the part's ultra-low RDS(on) only translates to high efficiency when conduction losses dominate, pair it with a low-Qg gate driver and minimize stray loop inductance in the switching node PCB layout. An insufficient thermal via array under the exposed pad will quickly turn the device into a hotspot. This page synthesizes distributor pricing, same-family OptiMOS™ 5 drop-in alternatives, and practical design notes not found in the bare manufacturer datasheet — all sourced from Infineon's official documentation and authorized distributor data as of 2026-09-15.
IQD020N10NM5CGSCATMA1 - 100V 276A N-Channel MOSFET | Infineon
The Infineon IQD020N10NM5CGSCATMA1 is a 100 V N-channel power MOSFET rated for 276 A continuous drain current (Tc) with a maximum on-resistance of 2.0 mOhm, packaged in the compact 9-pin PG-WHTFN-9-U02 (PQFN 5x6 mm) surface-mount package with an exposed thermal pad. It is designed using Infineon's OptiMOS 5 logic-level technology platform, targeting high-current synchronous rectification, hot-swap, and battery protection applications. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to route and regulate high currents in power-conversion circuits. Within the broader component taxonomy, the N-channel enhancement-mode MOSFET sits under power transistors -> MOSFETs -> discrete semiconductors. The N-channel variant is preferred over P-channel in most designs because electrons have higher mobility than holes, yielding lower on-resistance per unit silicon area and superior figure-of-merit (FOM = RDS(on) x Qg). Key specifications include: drain-source voltage (VDS) of 100 V, continuous drain current (ID) of 276 A at case temperature, gate threshold voltage (VGS(th)) of 3.8 V typical, total gate charge (Qg) of 107 nC at VGS = 10 V, and an extremely low maximum on-resistance of 2.0 mOhm. Power dissipation is 3 W on the Ta (ambient) rating and 333 W on the Tc (case) rating, with an operating junction temperature range of -55C to +175C. The IQD020N10NM5CGSCATMA1 architecture uses a logic-level gate drive (10 V VGS), shield-gate trench technology, and an exposed top-side pad for top-side cooling. Its very low RDS(on) x Qg figure-of-merit minimises conduction and switching losses simultaneously, making it especially suitable for hard-switching topologies at high switching frequencies. Compared to its predecessor generation, OptiMOS 5 reduces switching losses by roughly 30 percent at equivalent on-resistance. Typical applications include server and telecom switched-mode power supplies (SMPS), 48 V battery-protection and hot-swap controllers in telecom/data-centre equipment, synchronous rectification in high-current DC-DC converters, motor-drive half-bridges for industrial drives, and battery management systems (BMS) for e-mobility and energy-storage installations. The device is also frequently used in OR-ing and eFuse circuits where low conduction loss is critical. When designing with this part, ensure the gate-driver stage can deliver at least 10 V VGS to achieve the rated on-resistance. PCB layout should minimise parasitic source-inductance (Kelvin connection recommended) and use sufficient copper area on the exposed thermal pad to keep Tj within the 175C maximum. A gate-source resistor of 10 kOhm is recommended to prevent inadvertent turn-on from dv/dt coupling. This page synthesises distributor pricing across DigiKey, Mouser, LCSC, Arrow, and Unikeyic, plus drop-in alternative analysis and practical design notes not found in the manufacturer datasheet itself, giving engineers a single-source decision matrix for the IQD020N10NM5CGSCATMA1 footprint.
IQD063N15NM5SCATMA1 - 150V 5.1mΩ OptiMOS 5 N-Channel MOSFET | Infineon
The Infineon IQD063N15NM5SCATMA1 is a 150 V N-channel power MOSFET from the OptiMOS™ 5 family, offering an ultra-low on-resistance of 5.1 mΩ at 10 V VGS and a continuous drain current of 151 A at 25°C case temperature, packaged in a compact PG-WHSON-8-U02 (8-pin WHSON with exposed pad) surface-mount outline. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch used to efficiently commutate current in power-conversion topologies. N-channel MOSFETs conduct when the gate is pulled above the source by the gate-threshold voltage (VGS(th)). The OptiMOS™ 5 family from Infineon represents a 150 V generation that uses advanced trench technology to minimize RDS(on) and gate charge, targeting high-frequency switched-mode power supplies (SMPS), motor drives, and synchronous rectification stages. The IQD063N15NM5SCATMA1 belongs to this family in the WHSON-8 dual-side-cooling package, a hierarchy of: N-channel MOSFET → power MOSFET → discrete semiconductor → power management. Key features include a maximum drain-source voltage VDS of 150 V, a pulsed drain current capability supporting telecom-grade reliability, and a low gate charge QG of 48 nC at 10 V that minimizes driver losses. The device exhibits a thermal resistance from junction to case suitable for high-current handling, with a maximum power dissipation of 333 W at TC=25°C. The exposed top-side pad enables dual-side cooling, allowing either PCB copper or an attached heatsink to remove heat from both sides of the package. Architecturally, the IQD063N15NM5SCATMA1 uses Infineon's latest-generation trench cell design, which places the gate deep in a vertical trench and shrinks the mesa width, increasing channel density per unit silicon area. This produces the headline 5.1 mΩ on-resistance and reduces the figure-of-merit (FOM = RDS(on) × QG), which directly determines switching-converter efficiency at high frequencies. Typical applications include 48 V telecom point-of-load converters, server and data-center bus converters, synchronous rectification in isolated DC-DC bricks, battery protection and hot-swap circuits in industrial 24-72 V systems, and motor-drive half-bridges in e-mobility auxiliary loads. The 150 V rating provides ample margin above 48 V nominal buses and below standard telecom-surge profiles. When designing with this device, prioritize minimizing parasitic source inductance to unlock the full switching-speed capability of the OptiMOS™ 5 cell. Use a gate-driver IC with at least 4 V gate-source headroom above VGS(th) for full enhancement, and pair it with a properly rated bootstrap or isolated supply for high-side use. This page synthesizes distributor pricing, same-brand and cross-brand drop-in alternatives, and practical design notes not consolidated in the manufacturer datasheet, giving engineers a faster BOM validation path for high-current 150 V switching stages.
IQDH29NE2LM5CGSCATMA1 - 25V N-Ch 0.29mΩ MOSFET | Infineon
The Infineon IQDH29NE2LM5CGSCATMA1 is an N-channel OptiMOS 5 power MOSFET rated at 25 V VDS, with 75 A continuous drain current (Ta) and 789 A continuous drain current (Tc), housed in a 9-pin PG-WHTFN surface-mount package. The device delivers an ultra-low maximum on-resistance of 0.29 mΩ and supports up to 278 W power dissipation (Tc), targeting high-current switching in space-constrained designs. A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch that uses an electric field at the gate terminal to control current flow between the drain and source. Power MOSFETs such as this one fall within the hierarchy discrete semiconductor > transistor > MOSFET > power MOSFET > OptiMOS family, and they serve as the key building blocks of SMPS, motor control, and synchronous rectification stages where low conduction and switching losses are critical. Key features include a 2 V gate threshold voltage, dual-sided cooling via the PG-WHTFN-9 exposed pad, and an OptiMOS 5 trench process that simultaneously reduces RDS(on), gate charge, and reverse-recovery losses. The 5 mm × 6 mm outline keeps the footprint competitive with industry-standard PQFN 5×6 land patterns, simplifying layout migration. Architecturally, the part uses Infineon's latest-generation OptiMOS 5 silicon, which minimizes figure-of-merit (FOM = RDS(on) × Qg) to balance conduction and switching performance. The bottom-side exposed pad is metallurgically bonded for top-and-bottom dual cooling, allowing designers to attach a PCB heatsink or thermal via array for heat extraction in high-current rails. Compared with older OptiMOS 3 parts, this generation cuts switching losses by approximately 30 percent at the same RDS(on). Typical applications include 12 V synchronous rectification in telecom and server SMPS, hot-swap and OR-ing controllers in HPC and AI accelerator boards, USB-PD and eMMC buck/fet stages, and low-voltage brushless DC motor drive half-bridges. Its low gate charge also makes it well suited to high-frequency LLC and buck topologies above 300 kHz. When designing with this device, ensure the gate-drive voltage exceeds 4.5 V for full enhancement, and place the gate resistor near the gate pad to dampen parasitic ringing. The exposed pad must be soldered to a sufficiently large copper pour to maintain junction temperature within the SOA under continuous high-current operation. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found on the manufacturer datasheet.
IQDH35N03LM5CGATMA1 - 30V 700A 0.35mΩ N-Channel MOSFET | Infineon
The Infineon IQDH35N03LM5CGATMA1 is an N-channel power MOSFET rated at 30 V drain-to-source voltage with continuous drain current of 66 A at case temperature (Ta) and pulsed capability of 700 A at Tc, housed in the PG-TTFN-9-U02 surface-mount package. The device exhibits an extremely low typical on-resistance of 0.35 mΩ in a PQFN 5x6 mm² footprint optimized for high-current switching density. Power dissipation is rated at 2.5 W at Ta and 278 W at Tc, demonstrating the package's strong thermal performance with proper PCB copper layout. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch that conducts current between drain and source terminals when a sufficient gate-to-source voltage is applied. Within the discrete semiconductor hierarchy, MOSFETs sit beneath transistors, which belong to the broader class of active discrete components. The OptiMOS 5 technology employed here represents Infineon's fifth-generation trench MOSFET platform, delivering industry-leading figure-of-merit (FOM = RDS(on) × Qg) for switching power conversion applications. Key differentiating features include ultra-low RDS(on) of 0.35 mΩ at 10 V VGS, monolithic integrated Schottky-like body diode for reduced reverse recovery losses, and an exposed-top metal pad for top-side cooling. The PG-TTFN-9-U02 package provides a low-profile, halogen-free footprint with gull-wing leads and a wide drain tab for vertical current flow and minimal package inductance. The device is engineered using Infineon's OptiMOS 5 30V platform, which utilizes a deep-trench cell structure combined with a thin wafer backside metallization process. This architecture reduces both conduction and switching losses, making the part highly suitable for high-frequency synchronous rectification at frequencies above 500 kHz. Typical applications include synchronous rectification in isolated DC-DC converters, point-of-load (POL) converters for servers and telecom, hot-swap and OR-ing functions in 12 V industrial bus systems, motor drive switching stages in battery-powered robotics, and high-current USB-PD power paths. The low gate charge supports fast switching transitions for high-frequency buck and buck-boost topologies. When designing with this MOSFET, pay close attention to PCB layout - the drain tab and source pads must be connected to wide copper pours to achieve the rated thermal performance. Use Kelvin-source connection for the gate drive to suppress source-bounce and ringing at high di/dt. This page synthesizes distributor pricing, drop-in alternatives, application-specific design considerations, and comparison data not found in the manufacturer datasheet alone.
IQDH35N03LM5SCATMA1 - 30V 700A N-Ch OptiMOS 5 MOSFET | Infineon
Infineon IQDH35N03LM5SCATMA1 is a 30V N-channel OptiMOS 5 power MOSFET in the 8-pin PG-WHSON-8-U02 (PQFN 5x6 Source-Down) package, rated for 66A continuous drain current at Ta and 700A pulsed at Tc, with on-state resistance of 0.35 mOhm max at VGS=10V. It is specified for surface-mount power conversion with a power dissipation of 2.5W at Ta and 278W at Tc, making it one of the most thermally capable 30V MOSFETs in the Source-Down PQFN 5x6 footprint. A power MOSFET is a voltage-controlled, majority-carrier semiconductor switch that uses an insulated gate to modulate a conduction channel between source and drain terminals. Modern low-voltage MOSFETs, including OptiMOS 5, are trench-gate N-channel devices optimized for synchronous rectification, OR-ing, and high-frequency DC-DC conversion. Within the power management hierarchy, MOSFETs sit beneath DC-DC converters and synchronous buck/boost controllers as the commutation element that defines conduction loss, switching loss, and overall efficiency. The IQDH35N03LM5SCATMA1 belongs to Infineon's 30V Source-Down family designed to enable dual-sided PCB cooling in SMPS and telecom applications. Key features include a 0.35 mOhm maximum RDS(on) at VGS=10V, an ultra-low gate charge Qg optimized for high-frequency switching, and a Source-Down package that flips the source to the top of the die for direct heatsink attachment or top-side copper cooling. The device uses Infineon's OptiMOS 5 trench technology, which combines a shielded-gate structure with a low-resistance epitaxial layer. The Source-Down flip-chip die attach reduces package parasitic source inductance by approximately 50% compared to standard wire-bond PQFN, which directly improves switching figure-of-merit (FOM = RDS(on) x Qg) and reduces voltage overshoot in hard-switched topologies. Typical applications include synchronous rectification in 12V-30V server and telecom DC-DC converters, battery management OR-ing and hot-swap controllers, USB-PD and e-mobility high-current rails, and point-of-load (POL) regulators for high-performance computing. The Source-Down footprint also supports efficient top-side cooling in space-constrained modules. When designing with this part, ensure the PCB land pattern is the PQFN 5x6 Source-Down variant (not the standard PQFN 5x6) since the Source-Down package has the thermal pad on the source potential. Use a Kelvin-source connection to the gate driver return to suppress gate-oscillation and maximize the benefit of the ultra-low RDS(on). This page synthesizes distributor stock and pricing, a drop-in alternatives table covering both same-brand and cross-brand Source-Down 30V MOSFETs, and practical thermal and layout notes not found in the Infineon datasheet summary.
IQDH88N06LM5ATMA1 - 60V 447A 0.86mOhm N-FET | Infineon OptiMOS 5
The Infineon IQDH88N06LM5ATMA1 is a 60V N-channel power MOSFET built on Infineon's OptiMOS 5 process, housed in a source-down PG-TSON-8-9 (PQFN 5x6) surface-mount package with 0.86 mOhm maximum RDS(on) and continuous drain current ratings of 42 A at Ta and 447 A at Tc. Key parameters include 60V VDS, 333W power dissipation at Tc, and an integrated gate drive optimized for high-frequency switching. A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch that uses an electric field at the insulated gate to conduct current between drain and source. Power MOSFETs are foundational switching devices in switched-mode power supplies (SMPS), motor drives, and synchronous rectification stages, and they sit within the power-semiconductor hierarchy: MOSFET -> discrete semiconductor -> power management. The OptiMOS 5 family represents Infineon's fifth-generation 60V/80V/100V/120V/150V/200V trench technology aimed at minimizing conduction and switching losses. Key features include 0.86 mOhm RDS(on) at 10V VGS (a class-leading figure for 60V in this footprint), low gate charge, body diode optimized for hard switching, and source-down pad architecture that pulls heat directly into the PCB copper. The device is rated for 3W at Ta and 333W at Tc, giving designers a wide thermal budget when paired with adequate PCB copper area. The 60V absolute maximum rating provides substantial margin above nominal 48V telecom and 24V industrial bus rails, supporting transient tolerance per typical SMPS design rules. Technically, the OptiMOS 5 cell shrinks die pitch while improving the figure-of-merit (FOM = RDS(on) x Qg), enabling both lower conduction loss and faster switching at high di/dt. The PG-TSON-8-9 source-down footprint replaces traditional DPAK/TO-220 layouts with a low-profile 5x6 mm PQFN, freeing board area and improving thermal coupling to inner copper layers. Typical application uses include primary-side switches in telecom bricks, secondary-side synchronous rectifiers, hot-swap controllers in 48V server rails, and high-current point-of-load (POL) converters. In design, the source-down pad must be soldered directly to a copper pour of at least 1 square inch on the top layer to achieve the rated thermal performance; thermal vias to internal copper planes are strongly recommended. Gate drive should be a 10V rail with low-impedance turn-off (4V or higher for full enhancement), and a gate-source resistor of 10-100 ohm controls ringing. The 60V rating leaves 20-30% headroom over a nominal 48V input, supporting typical telecom transient profiles.
IQDH88N06LM5CGSCATMA1 - 60V N-Ch MOSFET 0.86mΩ | Infineon
The Infineon IQDH88N06LM5CGSCATMA1 is a 60V N-channel power MOSFET built on Infineon's OptiMOS 5 technology, housed in a 9-pin PG-WHTFN-9-U02 (PQFN 5x6) package with exposed thermal pad and dual-side cooling capability. The device delivers 42A continuous drain current at 25°C ambient (447A peak at 25°C case) with an ultra-low typical on-resistance of 0.86 mΩ at 10V VGS, and is rated for 3W power dissipation at ambient and 333W at case temperature. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used as the core switching element in DC-DC converters, motor drives, and synchronous rectification stages. N-channel MOSFETs (N-FETs) carry current via electrons, which have higher mobility than holes, giving them lower on-resistance per unit silicon area than equivalent P-channel parts. The IQDH88N06LM5 belongs to the discrete MOSFET family within discrete semiconductors, optimized for low-voltage, high-current SMPS applications. Key features include a 60V drain-source breakdown voltage (V(BR)DSS), 0.86 mΩ typical RDS(on) at VGS=10V, logic-level compatible gate drive, and an integrated exposed drain pad for superior thermal performance. The PG-WHTFN-9-U02 package provides exceptionally low thermal resistance and supports dual-side cooling via the top-side metal, enabling higher continuous current in the same PCB footprint than traditional DFN parts. The device leverages Infineon's latest trench MOSFET process technology, which achieves best-in-class figure-of-merit (FOM = RDS(on) × Qg) for switching loss reduction. The low gate charge and low output capacitance enable operation at high switching frequencies (>1 MHz) in point-of-load and telecom DC-DC converter stages, reducing magnetic component size and overall system cost. Typical applications include synchronous rectification in 48V telecom and server DC-DC converters, hot-swap and OR-ing switches in high-performance computing, battery protection circuits in power tools and e-mobility, and motor drive half-bridges in industrial automation. The 60V rating provides ample margin above 48V nominal bus rails used in data centers. When designing with this device, pay close attention to gate drive voltage - the maximum 0.86 mΩ RDS(on) is achieved at VGS=10V, while logic-level operation at 4.5V will see roughly 1.5-2x higher on-resistance. Use a dedicated gate driver IC for high-frequency switching to minimize transition losses. This page synthesizes distributor stock levels, parametric cross-references, and practical PCB layout guidance not consolidated on any single distributor product page.
IQDH88N06LM5SCATMA1 - 60V 447A 0.7mOhm OptiMOS 5 N-MOSFET | Infineon
The Infineon IQDH88N06LM5SCATMA1 is a 60 V N-channel power MOSFET built on Infineon's OptiMOS 5 process, offering an extremely low on-state resistance of 0.7 mOhm at 10 V VGS in a thermally enhanced, dual-side-cooling PG-WHSON-8-U02 (source-down) surface-mount package. It supports continuous drain current of 42 A at Ta (25 C ambient) and 447 A at Tc (case temperature controlled), with a total power dissipation of 333 W at Tc, making it one of the lowest-RDS(on) 60 V parts per mm^2 in its class. A power MOSFET is a voltage-controlled switch in which the gate field modulates a conducting channel between source and drain. N-channel enhancement-mode MOSFETs like this part are the dominant switching element in synchronous buck converters, half-bridges, and full-bridges because they offer lower RDS(on) per silicon area than P-channel counterparts. Within the broader taxonomy, this OptiMOS 5 device is a discrete power semiconductor -> MOSFET -> N-channel MOSFET -> low-voltage power MOSFET, optimized for high-frequency, high-current switching. Key differentiating features include an integrated Schottky-like monolithically integrated body diode optimized for low Qrr and robust commutation, a 1.7 V gate-threshold voltage supporting standard logic-level and 5 V/12 V driver compatibility, and a total gate charge of 76 nC that allows MHz-class switching frequencies in hard-switched topologies. The source-down PG-WHSON-8 package exposes the die paddle on both sides of the PCB for direct top-side and bottom-side heatsinking, doubling the heat-flow path versus standard DFN packages. OptiMOS 5 technology delivers a figure-of-merit (FOM = RDS(on) x Qg) that is among the lowest commercially available for 60 V parts. This translates directly into lower conduction loss, lower switching loss, and simpler thermal design - particularly valuable in high-density DC-DC converters where every milliwatt of loss becomes a thermal-design penalty. Typical applications include 48 V automotive eMobility auxiliary converters, high-current telecom buck regulators, server ORing and hot-swap controllers, industrial eFuse circuits, and battery management protection in 12 V/24 V/48 V Li-ion packs. The dual-side-cooling package is also preferred for vertical PCB mounting where airflow is forced across both faces. When designing with this part, pay close attention to gate-drive voltage headroom (recommended VGS = 10 V for full RDS(on) spec) and source-down PCB layout symmetry - asymmetric copper areas on the top vs. bottom side will cause unbalanced current sharing and degrade thermal performance. The exposed source pad must be continuous with the system power-ground plane for the lowest parasitic source inductance. This page consolidates distributor pricing, drop-in alternatives, and practical PCB layout notes not found in the manufacturer datasheet alone, giving engineers a one-stop view of the IQDH88N06LM5SCATMA1 for sourcing and design-in decisions.
IQE004NE1LM7CGATMA1 - 15V OptiMOS 7 0.45mOhm N-FET | Infineon
The Infineon IQE004NE1LM7CGATMA1 is a 15 V N-channel trench power MOSFET from Infineon's OptiMOS 7 family, featuring an ultra-low RDS(on) of 0.45 mOhm in the compact surface-mount PG-TTFN-9-3 package. It is rated for 58 A continuous drain current at TA=25C and up to 379 A pulsed at TC=25C, with power dissipation of 2.1 W on the PCB land pattern and 89 W with infinite heatsink. The CGATMA1 suffix indicates tape-and-reel packaging with an automotive-friendly Infineon ordering code. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switching device in which the gate field modulates a conductive channel between drain and source. Power MOSFETs sit in the discrete semiconductor hierarchy: power MOSFET -> MOSFET -> transistor -> discrete semiconductor. They are the workhorse of high-frequency, high-efficiency DC-DC conversion, replacing older planar silicon designs and competing with GaN/SiC in the highest-frequency tiers. The OptiMOS 7 trench technology used in IQE004NE1LM7CGATMA1 enables the sub-milliohm on-resistance per die area that is required for high-current synchronous rectification in 12 V server, telecom, and USB-PD buck converters. Key differentiating specifications include the 15 V VDS rating, 0.45 mOhm RDS(on) at VGS=10 V, and an exceptionally low Qg for the on-resistance class, reducing switching losses at multi-hundred-kHz switching frequencies. The PG-TTFN-9-3 (5 mm x 6 mm) package delivers a low package resistance contribution and Kelvin-source capable pinout for high-frequency gate driving. Typical applications include synchronous rectification in 12 V VRM and POL converters, ORing and hot-swap switches in server and telecom power supplies, USB-PD and Type-C sink/source controllers, and battery management systems in e-mobility and 48 V mild-hybrid architectures. The OptiMOS 7 family is qualified for both industrial and automotive-grade power designs. When designing with this part, ensure the gate drive swing reaches at least 10 V to achieve the rated 0.45 mOhm, since RDS(on) typically doubles at 4.5 V VGS. Keep the high-di/dt switching loop area to the source/PCB return path minimum to limit ringing, and use a Kelvin-source connection when available on the pinout. Thermal copper area directly determines the achievable continuous current in real systems. This page synthesizes distributor pricing, drop-in Infineon alternatives, and practical design notes not found in the manufacturer datasheet alone, optimized for engineers specifying this part in SMPS and high-current load-switch designs.
IQE008N03LM5ATMA1 - 30V 0.85mΩ OptiMOS 5 N-Ch MOSFET | Infineon
The Infineon IQE008N03LM5ATMA1 is an N-channel OptiMOS™ 5 power MOSFET rated at 30 V drain-source voltage with an ultra-low typical on-resistance of 0.85 mΩ and continuous drain current of 27 A (Ta) / 253 A (Tc), housed in the source-down PG-TSON-8-4 (3.3x3.3 mm) package. It leverages Infineon's Source-Down technology to place the thermal pad on the source terminal rather than the drain, enabling direct PCB heatsinking from the source side and superior paralleling behavior. A power MOSFET is a voltage-controlled semiconductor switch used to efficiently route or regulate current in power conversion circuits. Within the broader taxonomy, this part sits in the N-channel MOSFET family under discrete semiconductors and power management, and OptiMOS 5 is Infineon's 30 V–250V platform optimized for synchronous rectification, DC-DC conversion, and hot-swap applications where lowest conduction loss and smallest footprint are required. Key features include an industry-leading figure-of-merit (FOM = RDS(on) x Qg), 100% Rg-tested avalanche ruggedness, and a leadless exposed-pad package that achieves low thermal resistance. Per the manufacturer datasheet, the device is rated for 2.1 W power dissipation at TA = 25 °C and 89 W at TC = 25 °C on a 40x40x1.5 mm FR4 PCB with 6 cm² copper drain area, allowing design engineers to push high currents without external heatsinks in space-constrained layouts. The Source-Down architecture repositions the silicon die inside the TSON-8-4 package so the source potential is on the bottom thermal pad. This vertical-current-flow topology reduces source inductance, improves current sharing when paralleled, and simplifies PCB thermal design by allowing the source tab to be soldered directly to a top-side copper pour for maximum heat extraction. Typical applications include high-current synchronous buck converters in servers and telecom brick converters, hot-swap controllers in 12 V distributed-architecture boards, OR-ing FETs for redundant power supply modules, and battery protection circuits in e-mobility and battery management systems. The Source-Down configuration is particularly advantageous where multiple FETs are paralleled to share load current. When designing with this MOSFET, ensure the gate drive voltage reaches at least 10 V for full RDS(on) enhancement and place the gate resistor close to the gate pin to suppress ringing. The exposed source pad must be soldered to a sufficiently large copper pour (>=1 cm²) to achieve the rated thermal performance; ignoring this will cause thermal runaway well below the datasheet current rating.