MOSFET
製品 (1294)
IPP60R180P7XKSA1 - 600V 18A 180mΩ CoolMOS P7 MOSFET | Infineon
The Infineon IPP60R180P7XKSA1 is a 600V N-channel superjunction (CoolMOS P7) power MOSFET rated for 18A continuous drain current (at Tc) and 72W power dissipation, housed in a through-hole PG-TO220-3 package. It features an ultra-low typical on-resistance of 180 mΩ at 10V VGS, optimized for high-voltage, high-efficiency switched-mode power supplies. As the successor to the CoolMOS P6 series, P7 combines fast switching superjunction performance with improved ease-of-use and ruggedness. A power MOSFET is a voltage-controlled semiconductor switch that enables efficient power conversion in switching power supplies, motor drives, and PFC stages. The metal-oxide-semiconductor field-effect transistor (MOSFET) category belongs to the broader discrete semiconductor family, which is fundamental to virtually all modern power electronics. Within the MOSFET category, superjunction (SJ) technology represents the state-of-the-art for high-voltage (>500V) applications, offering an order-of-magnitude better figure-of-merit (RDS(on) × Qg) than conventional planar MOSFETs. Key features include 600V drain-source breakdown voltage, 180 mΩ maximum RDS(on) at VGS=10V, fast body diode with low Qrr for hard-switching topologies, and an integrated ESD-protected gate. The device is avalanche-rated and 100% UIL-tested, ensuring ruggedness under abnormal operating conditions. Its gate threshold voltage of 3.5V (typical) makes it directly compatible with standard gate-drive ICs. The CoolMOS P7 platform is built on Infineon's superjunction principle, replacing the conventional drift region with alternating P/N epitaxial layers. This reduces the specific on-resistance per unit area, enabling higher current density or lower conduction losses in the same footprint. The technology also integrates a fast body diode with soft reverse recovery, reducing switching losses in bridge topologies such as PFC and half-bridge converters. Typical applications include server and telecom switched-mode power supplies (SMPS), solar inverters, EV charging station auxiliary power, industrial LED lighting drivers, and power-factor-correction (PFC) front stages. The PG-TO220-3 through-hole package suits designs where the MOSFET is mounted to a chassis-attached heatsink for maximum thermal performance. When designing with this device, ensure the gate-drive voltage reaches at least 10V for full enhancement, account for safe operating area limits during startup transients, and minimize stray inductance in the switching loop to contain voltage overshoot below the 600V rating. This page synthesizes distributor pricing, drop-in alternatives from Infineon's CoolMOS P7 family, and practical design notes not found in the manufacturer datasheet.
IPP60R190P6XKSA1 - 600V CoolMOS P6 N-Channel MOSFET | Infineon
The Infineon IPP60R190P6XKSA1 is a 600 V N-channel power MOSFET from Infineon's CoolMOS P6 superjunction family, delivering 20.2 A continuous drain current (Tc) with an on-resistance of 190 mOhm in a through-hole PG-TO220-3 package. It combines the high efficiency of a superjunction (SJ) architecture with the ease-of-use of a planar MOSFET body diode, targeting industrial switched-mode power supplies, PFC stages, and LLC half-bridge converters. A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switching device that uses an electric field at the gate to modulate current flow between drain and source. The superjunction variant - CoolMOS - replaces the conventional N-drift epitaxial layer with alternating P/N columns that simultaneously increase the breakdown voltage and shrink the on-resistance per unit area. Within the broader power semiconductor taxonomy, this device sits at: MOSFET -> power MOSFET -> superjunction MOSFET -> high-voltage (>500 V) MOSFET -> discrete semiconductor. Key parameters include 600 V drain-source breakdown (VDS), 190 mOhm maximum RDS(on) at 25 degC, 20.2 A continuous ID at Tc=25 degC, and 151 W power dissipation at Tc=25 degC. The TO220-3 through-hole package offers low thermal resistance when mounted to a small heatsink, and the PG-TO220-3 leadform is the industry-standard drop-in outline for high-voltage MOSFETs. The CoolMOS P6 family is engineered to close the gap between ultimate-performance P7/CFD7 generations and ease-of-use P5 generations. Compared to P5, P6 improves RDS(on)*Qg figure-of-merit and tightens body-diode reverse-recovery behaviour. The result is a part that suits high-frequency hard-switched and soft-switched topologies, with low gate charge (Qg typically 32 nC) reducing driver losses. Typical applications include server and telecom SMPS PFC boost stages, industrial motor drives, solar inverters, EV charging auxiliary power modules, and eMobility on-board chargers where efficiency, thermal margin, and BOM simplicity dominate the trade-off. Design considerations include selecting a totem-pole or half-bridge driver with adequate gate-drive voltage (10 V typical), keeping the gate-loop inductance below 5 nH, and using an isolated or high-side driver when the source is switching (e.g., in high-side buck or bootstrap half-bridge configurations). This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
IPT004N03LATMA1 - 30V 300A 0.4mΩ OptiMOS N-MOSFET | Infineon
The Infineon IPT004N03LATMA1 is a 30 V N-channel OptiMOS power MOSFET housed in a source-down PG-HSOF-8-1 (TO-Leadless) surface-mount package, rated for 300 A continuous drain current (Tc) and an ultra-low typical on-resistance of 0.4 mΩ. It combines Infineon's trench OptiMOS technology with a thermally enhanced leadless package whose drain tab doubles as the PCB land pattern, enabling direct top-side cooling in high-current PCB designs. A power MOSFET is a voltage-controlled semiconductor switch that uses an insulated gate (typically a MOS capacitor) to modulate majority-carrier conduction between its drain and source terminals. In the broader power-semiconductor taxonomy, this part sits within the discrete MOSFET family, which is itself a subset of power transistors used for DC-DC conversion, motor drive, and load switching. The OptiMOS platform specifically targets very low RDS(on) per unit silicon area and low gate charge, optimizing it for high-frequency switching power stages where conduction and switching losses both matter. Key features of the IPT004N03LATMA1 include a maximum VDS of 30 V, a continuous ID of 300 A at 25 °C case temperature, pulsed current capability suitable for inrush and short-circuit events, and a total power dissipation of 3.8 W on a 1 in² FR4 PCB (Ta) rising to 300 W when the case is properly cooled. The PG-HSOF-8-1 package exposes the drain on the bottom of the package, which Infineon explicitly designed for forklift, light electric vehicle, telecom point-of-load, and high-current OR-ing applications. Gate threshold is specified in the logic-level family, simplifying direct MCU or hot-swap-controller drive. The architecture leverages OptiMOS 5-generation cell design with a low-resistance leadless leadframe; the source-down connection shortens the high-current loop on the PCB, reducing parasitic inductance that would otherwise limit switching speed and create voltage overshoot. A low Qg × RDS(on) figure-of-merit makes the device efficient at both PWM and synchronous-rectification duty cycles. Typical applications include 24 V forklift traction inverters, light electric vehicle (LEV) motor controllers, telecom point-of-load (POL) converters up to ~30 A per phase, high-current e-fuses, and battery protection OR-ing FETs. The combination of 300 A DC rating and a source-down footprint also makes it attractive as a hot-swap controller's main pass element in 24 V/48 V server and storage backplanes. When designing with this MOSFET, ensure the PCB top-side copper area is sized to the application's continuous current - a 1 in² copper pour at 1 oz copper supports roughly 3.8 W steady state without active cooling. For continuous operation near 200 A or more, a forced-air or cold-plate solution is recommended to keep Tj below 150 °C. This page synthesizes distributor pricing, drop-in and cross-brand equivalents from the OptiMOS family, and practical design notes that go beyond a single datasheet.
IPT007N06NATMA1 - 60V 300A OptiMOS 5 N-FET | Infineon
The Infineon IPT007N06NATMA1 is an N-channel power MOSFET built on Infineon's OptiMOS 5 60 V technology, rated for 60 V VDS, 300 A continuous ID (at TC = 25 C), and 375 W power dissipation in the compact PG-HSOF-8-1 (TOLL) surface-mount package. With a maximum on-resistance of 0.75 mOhm at VGS = 10 V, this device is engineered for ultra-low conduction loss in high-current switching applications. It ships on tape and reel with a 3000-piece standard pack quantity and is fully RoHS compliant. A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to route and modulate current in power-conversion circuits. Within the broader taxonomy, MOSFETs sit under discrete semiconductors -> transistors -> FETs -> power MOSFETs. The OptiMOS 5 family from Infineon represents the fifth-generation trench MOSFET platform optimized for low RDS(on), low gate charge, and high avalanche ruggedness, making these parts the workhorse of modern synchronous rectification, motor drive, and hot-swap designs. Key differentiating features include the 0.75 mOhm maximum RDS(on), industry-leading figure-of-merit (FOM = RDS(on) x QG), and a thermally enhanced PG-HSOF-8-1 package with an exposed source pad that drops thermal resistance dramatically compared with standard SO-8 footprints. The 60 V drain-source rating comfortably covers 12 V and 24 V bus rails with substantial margin for transients. Low QG and QOSS enable high-frequency switching up to several hundred kHz with manageable driver losses. Typical applications span high-current DC-DC converters, synchronous rectification in telecom and server silver-box supplies, hot-swap and OR-ing controllers, battery protection and BMS discharge paths, and high-power brushless DC motor drives. The TOLL footprint also makes it attractive for space-constrained eMobility and industrial robotics designs where board area and thermal density both matter. When designing with this device, pay close attention to PCB layout: the source pad is the dominant thermal path, so a generous top-side copper pour connected to the exposed pad is mandatory. Driver placement should minimize the gate-loop inductance to prevent unwanted ringing and dv/dt-induced turn-on. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes that go beyond a single datasheet summary, giving engineers the cross-reference context needed for second-source qualification.
IPT008N06NM5LFATMA1 - 60V 454A 0.8mΩ N-Ch MOSFET HSOF-8 | Infineon
The Infineon IPT008N06NM5LFATMA1 is an N-channel OptiMOS 5 power MOSFET rated at 60 V drain-source voltage, 454 A continuous drain current (Tc), and an ultra-low 0.8 mΩ on-resistance (RDS(on)) at 10 V VGS, packaged in the PG-HSOF-8 (single flat-lead HSOF-8) surface-mount form factor. As a member of Infineon's 'linear FET' family, the device is engineered to deliver the very low RDS(on) of a trench MOSFET together with a wide safe operating area (SOA) suited to inrush and hot-swap events. Typical on-state power dissipation is 278 W (Tc). A power MOSFET is a voltage-controlled semiconductor switch used to efficiently route or regulate current in power conversion stages. The N-channel enhancement-mode MOSFET, the most common topology, turns on when a positive gate-source voltage exceeds the threshold (here VGS(th) is in the 3.6 V region) and conducts current from drain to source through a low-resistance channel. Within the broader taxonomy, the IPT008N06NM5LF sits in the discrete semiconductor family: MOSFET -> power MOSFET -> low-voltage (<100 V) trench MOSFET -> OptiMOS 5 -> Infineon linear FET subfamily. Key electrical strengths include 0.8 mΩ RDS(on) at 10 V VGS, 454 A continuous drain current at 25 °C case, 60 V VDS max rating, and a linear-FET-style SOA that tolerates high current at elevated drain voltages - critical for hot-swap, eFuse, and battery protection. The PG-HSOF-8 package uses a large exposed metal pad for top-side cooling and replaces the traditional wire bonds with a copper clip, dramatically reducing package resistance and inductance. Typical applications include 48 V hot-swap controllers, server/OR-ing power paths, battery management system (BMS) protection FETs, motor drive H-bridges, and high-current DC-DC converters. The combination of 60 V rating and 0.8 mΩ RDS(on) is especially useful in 12 V/24 V/48 V rails where the linear SOA region must survive large inrush transients without tripping upstream protection. Design considerations include keeping the gate drive above 10 V for full enhancement, minimizing source-inductance loop area to limit voltage overshoot, and providing adequate PCB copper and thermal vias to extract heat from the top-side cooling pad. This page synthesizes distributor pricing, drop-in same-package alternatives, and practical design notes beyond the manufacturer datasheet.
IPT010N08NM5ATMA1 - 80V 1.05mΩ 425A OptiMOS 5 MOSFET | Infineon
The Infineon IPT010N08NM5ATMA1 is a single N-channel OptiMOS™ 5 power MOSFET rated 80 V with an industry-leading ultra-low on-state resistance of 1.05 mΩ at 25 °C, in a TO-Leadless (TOLL) surface-mount package. Continuous drain current is rated up to 43 A at Tc=25 °C ambient-equivalent and an exceptional 425 A at case temperature, with power dissipation of 3.8 W (Ta) / 375 W (Tc). The OptiMOS 5 trench process targets high-current synchronous rectification in telecom, server, and industrial SMPS stages. A power MOSFET is a voltage-controlled three-terminal semiconductor switch that uses an electric field on the gate to conduct current between drain and source. The OptiMOS 5 family sits in the broader MOSFET taxonomy (N-channel enhancement-mode MOSFET → power MOSFET → trench MOSFET → power management discrete), and is engineered specifically to minimize conduction loss and switching loss in high-frequency switching applications. Compared with planar MOSFETs of equivalent voltage class, trench MOSFETs deliver roughly 3–5× lower RDS(on) per unit silicon area, which directly translates to higher system efficiency, smaller heatsinks, and higher power density. Key differentiators of the IPT010N08NM5 include 1.05 mΩ maximum RDS(on) at VGS=10 V (one of the lowest in the 80 V class), an integrated source-sense kelvin connection in the TOLL package, low gate charge (Qg) and low Qgd/Qgs ratios that reduce crossover switching losses, and an operating junction temperature range of −55 °C to +175 °C. The TOLL footprint exposes the drain tab on the top side, enabling direct attachment to a top-side cold plate for two-sided cooling in high-current designs. These characteristics make the part suitable for hard- and soft-switching topologies where every milliohm of RDS(on) translates to watts of conduction loss. The IPT010N08NM5ATMA1 is optimized for high-current synchronous rectification in telecom and server power supplies, forklift and light electric vehicle (LEV) motor drives, industrial eFuse and battery protection blocks, and 48 V bus hot-swap controllers. With up to 425 A pulsed drain capability, the part can also serve as the high-current switch in DC-Link discharge or active-ORing applications where parallel MOSFET arrays were previously required. The TOLL package's 5×6 mm footprint with an exposed thermal pad gives designers a high-density surface-mount solution while retaining mechanical robustness for industrial vibration profiles. This page synthesizes real-time distributor pricing across DigiKey/Mouser/LCSC, drop-in alternatives within the same TOLL package, and practical thermal design guidance that goes beyond the manufacturer datasheet. All specifications reflect the verified Infineon datasheet for the IPT010N08NM5 OptiMOS 5 series, last verified 2026-10-08.
IPT012N08N5ATMA1 - 80V 300A OptiMOS 5 N-Ch MOSFET | Infineon
The Infineon IPT012N08N5ATMA1 is an N-channel power MOSFET built on Infineon's OptiMOS™ 5 technology, rated for 80 V VDS, 300 A continuous drain current (TC), and a maximum on-resistance of 1.2 mOhm, housed in the PG-HSOF-8 (TOLL) surface-mount package with a metal tab for top-side cooling. A power MOSFET is a voltage-controlled switch used to efficiently route or convert energy in power-electronics circuits. In the broader semiconductor taxonomy, this part belongs to the discrete MOSFET family, then to N-channel enhancement-mode power transistors, then to power semiconductors. OptiMOS™ 5 represents Infineon's fifth-generation 80 V-300 V platform, optimized for synchronous rectification, telecom DC-DC bricks, motor drives, and high-current ORing. The platform targets up to 44% output-capacitance reduction and 44% RDS(on) reduction versus the prior generation, allowing fewer paralleled devices and higher power density. Key features include 1.2 mOhm maximum RDS(on), 208 nC total gate charge QG, 178 nC gate-to-drain charge QGD, and 400 A pulsed drain current rating. The PG-HSOF-8 (TOLL) package has a low-profile 2.3 mm height with a large exposed top-side metal tab that conducts heat directly into an attached heatsink or cold plate. The 80 V drain-source rating provides ample margin for 48 V nominal telecom and battery systems, and the part is qualified to JEDEC JESD47, JESD22, and J-STD-020 for industrial use. Typical applications include 48 V telecom DC-DC synchronous-rectification stages, e-mobility motor-control inverters, high-current ORing and hot-swap controllers, battery management protection MOSFETs in 48-72 V Li-ion packs, and industrial SMPS primary-side switches. The combination of very low RDS(on), low gate charge, and a thermally efficient package suits high-frequency (>100 kHz) hard- and soft-switching topologies. When designing with this device, calculate worst-case conduction loss as P = IDS2 × RDS(on), gate-drive loss as f × QG × VGS, and verify junction temperature with the datasheet thermal-resistance curves. The TOLL package relies on the top-side tab for heatsinking; insufficient mounting pressure or thermal-interface material will quickly push TJ above the 175 °C limit. Always use a Kelvin-source footprint to suppress gate-drive ringing. This page synthesizes distributor pricing, drop-in alternatives, and design notes not aggregated in the Infineon datasheet, including same-brand OptiMOS 5 variants in the identical PG-HSOF-8 (TOLL) footprint and cross-brand equivalents from competing N-channel 80 V low-RDS(on) portfolios.
IPT012N08NF2SATMA1 - 80V, 1.2mΩ N-Channel MOSFET | Infineon
The Infineon IPT012N08NF2SATMA1 is an N-channel power MOSFET rated at 80V drain-source voltage with an exceptionally low typical on-resistance of 1.2 mΩ and a continuous drain current of 39 A at Ta (351 A pulsed at Tc), housed in the surface-mount PG-HSOF-8-10 (HSOF) package. It belongs to Infineon's StrongIRFET™ family, designed for high-current switching applications where low conduction loss and high robustness are critical. An N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch in which current flows between drain and source when a positive gate-source voltage exceeding the threshold is applied. MOSFETs sit within the broader power-management semiconductor hierarchy: transistor -> power MOSFET -> discrete semiconductor -> power management building block. They are the workhorses of modern switched-mode power supplies (SMPS), motor drives, and battery-management systems because they switch fast, conduct with minimal resistance, and dissipate low gate drive power. Key features of the IPT012N08NF2SATMA1 include an ultra-low typical RDS(on) of 1.2 mΩ at VGS=10V, a maximum drain-source voltage (VDS) of 80V, a continuous drain current of 39 A (Ta) / 351 A pulsed (Tc), and a maximum power dissipation of 300W at Tc. The HSOF-8-10 package exposes the drain tab for direct PCB heatsinking, achieving thermal resistance values suitable for >100W dissipation in well-laid-out boards. The part is qualified across -55 °C to +175 °C operating junction temperature. Architecturally, the device uses Infineon's OptiMOS™-derived trench technology to achieve low figure-of-merit (FOM = RDS(on) × Qg), balancing conduction and switching losses. This makes it suitable for both hard-switched and soft-switched topologies such as synchronous rectification in telecom and server SMPS, where high di/dt and dv/dt immunity are required. Typical applications include synchronous rectifiers in 48V telecom and server power supplies, high-current DC-DC converters, motor drives and H-bridges, battery management and protection FETs in 48V Li-ion systems, and hot-swap / OR-ing controllers. The wide safe operating area and avalanche rating make it suitable for industrial and automotive 12V/24V/48V buses. When designing with this MOSFET, ensure the gate-drive voltage reaches at least 10V for full RDS(on) specification; standard 12V gate drives are recommended. The exposed tab must be soldered to a sufficiently large copper area (typically >1 square inch) to keep junction temperature below 175 °C at full load, otherwise thermal derating will occur.
IPT015N10N5ATMA1 - 100V 300A 1.5mΩ OptiMOS 5 Power MOSFET | Infineon
The Infineon IPT015N10N5ATMA1 is an N-channel power MOSFET rated at 100V VDS, 300A continuous drain current (Tc), and a maximum on-resistance of 1.5 mΩ, built on Infineon's OptiMOS™ 5 technology and housed in the surface-mount PG-HSOF-8-1 (TOLL) package. It is optimized for synchronous rectification and high-frequency switching, delivering up to 44% output capacitance reduction and up to 43% RDS(on) reduction versus the previous generation. Maximum power dissipation is 375W at Tc. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to commutate current between the drain and source terminals. N-channel MOSFETs conduct when a positive gate-source voltage is applied, and are the dominant topology for low-voltage, high-current conversion because their majority-carrier channel yields the lowest conduction loss per unit silicon area. Modern power MOSFETs such as OptiMOS™ 5 belong to the broader power management semiconductor hierarchy: discrete MOSFET -> power discrete -> power semiconductor -> semiconductor device. Their key metrics - on-resistance RDS(on), gate charge Qg, output capacitance COSS, and Figure-of-Merit (RDS(on) x Qg) - directly determine the efficiency and thermal envelope of any switched-mode power supply, motor drive, or battery protection circuit. The IPT015N10N5ATMA1's headline figure-of-merit, combined with its 100V rating, makes it particularly effective in 48V automotive systems, telecom hold-up converters, and high-current synchronous buck or half-bridge stages. The TOLL (PG-HSOF-8-1) package offers an exposed top-side cooling pad compatible with double-sided cooling, allowing thermal resistance to be lowered substantially versus standard SO-8 footprints. The 300A pulsed current capability supports very high transient loads such as inrush, hot-swap, and e-fuse events. When designing with this part, pay close attention to gate-drive voltage (OptiMOS 5 is fully specified at VGS = 10V), keep the gate-drive loop physically small to suppress ringing, and observe the safe operating area shown in Diagram 2 of the manufacturer datasheet for case temperatures other than the rated Tc. The combination of low RDS(on), low Qg, and the thermally-enhanced HSOF-8 package makes this part an industry-favored synchronous FET for high-density server, telecom, and automotive 48V applications.
IPT015N10NF2SATMA1 - 100V 315A 1.5mΩ OptiMOS MOSFET | Infineon
The Infineon IPT015N10NF2SATMA1 is an N-channel OptiMOS power MOSFET rated at 100 V VDS, 315 A continuous drain current at Tc, and 1.5 mΩ typical on-resistance at VGS=10 V, housed in a surface-mount PG-HSOF-8-10 (HSOF-8 with tab) package. The die combines Infineon's latest OptiMOS trench technology with the source-down HSOF-8 footprint to deliver ultra-low conduction loss, low gate charge, and excellent thermal performance for high-current switching. Key headline parameters are 100 V drain-source breakdown, 1.5 mΩ RDS(on) at 10 V gate drive, and 315 A pulsed drain current rating in a 9-pin (8+tab) HSOF package. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch that conducts current between drain and source terminals when a sufficient gate-source voltage is applied. N-channel enhancement-mode MOSFETs like this one are the dominant building block of modern switched-mode power supplies (SMPS), motor drives, and battery management systems because they switch faster, dissipate less conduction loss than equivalent P-channel parts, and scale to very high currents. Within the broader power-semiconductor taxonomy, the IPT015N10NF2SATMA1 sits at the level of discrete MOSFET -> trench MOSFET -> OptiMOS 100V family -> low-voltage high-current SMPS segment. Key differentiating features include an exceptionally low 1.5 mΩ RDS(on) which directly reduces I²R conduction loss in high-current paths, a 315 A continuous drain current capability (at Tc) that enables parallel-free design at >200 A load, and an exposed source-down HSOF-8 tab providing very low thermal resistance to PCB copper. The OptiMOS generation also delivers low Qg and Qgd figures, which minimize gate-drive losses at high switching frequencies and reduce dv/dt-induced ringing. Architecturally, the part is built on Infineon's OptiMOS 100V platform using a stripe-cell trench layout, with the source metallization bonded to the exposed pad of the HSOF-8 package. This source-down configuration removes the typical source-bond-wire inductance and routes high current directly into the PCB copper plane, which both improves SOA robustness and lowers RθJA by spreading heat across both board sides. The integrated gate-protection network and avalanche-rated single-pulse avalanche energy further increase ruggedness in motor-drive and inductive-load applications. Typical applications include high-current server and telecom switched-mode power supplies (SMPS), 48 V e-mobility and mild-hybrid bus converters, brushless DC (BLDC) and permanent-magnet synchronous motor drives, battery management systems for power tools and energy storage, and high-current OR-ing / hot-swap circuits. The combination of 100 V rating, sub-2 mΩ RDS(on), and HSOF-8 footprint makes the part a strong fit where the previous generation of TO-220 or D²PAK parts would have run too hot. When designing with this MOSFET, the most important trade-off is the relationship between switching loss and conduction loss. Because RDS(on) is already very low, the designer can usually afford to switch faster (50–100 kHz or higher) to shrink magnetics, as long as gate-drive layout keeps the gate-loop inductance minimal. The exposed tab must be soldered to a sufficiently large copper area to keep junction temperature within the 175 °C absolute maximum. This page synthesizes distributor pricing, drop-in alternative cross-references, and practical design considerations not consolidated in the manufacturer datasheet alone, giving engineers a single source for parametric, sourcing, and PCB layout decisions.
IPT017N12NM6ATMA1 - 120V 331A OptiMOS 6 N-MOSFET | Infineon
The Infineon IPT017N12NM6ATMA1 is an N-channel power MOSFET built on OptiMOS 6 technology, rated at 120V drain-source voltage and 1.7 mOhm maximum on-resistance, housed in a surface-mount PG-HSOF-8 (TOLL) package. It supports continuous drain current of 29A at Ta and 331A at Tc, with power dissipation of 3W at Ta and 395W at Tc. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switching device used to efficiently switch or amplify electrical signals. N-channel MOSFETs like the IPT017N12NM6 belong to the broader category of discrete semiconductors, falling under transistors and specifically power MOSFETs. They are the workhorses of modern power conversion, used wherever a system must route or switch high currents with minimal loss. Key features of the IPT017N12NM6 include Infineon's latest OptiMOS 6 process technology, which delivers industry-leading Figure-of-Merit (FOM = RDS(on) x Qg) and ultra-low gate charge for reduced switching losses. The TOLL (HSOF-8) package exposes the lead frame, dramatically lowering thermal resistance compared to standard SO-8 footprints. The device is rated for -55C to +175C junction temperature operation and provides a logic-level compatible gate drive. Technically, the IPT017N12NM6 achieves 1.7 mOhm RDS(on) maximum at VGS=10V, with a typical gate threshold around 2V. Its low Qg and Qrr figures minimize switching losses at high frequencies, while the source-down package enables direct PCB thermal coupling. The combination makes it particularly suitable for hard-switched topologies above 50 kHz. Typical applications include high-current synchronous rectification in telecom and server DC-DC converters, hot-swap and OR-ing functions in 48V power distribution, battery protection circuits in e-mobility and battery management, and motor drive stages in industrial robotics. The 120V rating also covers 80V systems with ample avalanche headroom. When designing with this device, ensure the gate driver can supply sufficient peak current (Qg / trise) to achieve fast switching transitions. The exposed source pad must be soldered to a sufficient copper pour - typically 1 oz copper over at least 100 mm squared - to keep junction temperature within SOA limits at full load. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, providing a single-page reference for procurement, qualification, and PCB design decisions involving the IPT017N12NM6ATMA1.
IPT019N08N5ATMA1 - 80V, 1.9mOhm OptiMOS 5 N-MOSFET | Infineon
The Infineon IPT019N08N5ATMA1 is an N-channel power MOSFET built on Infineon's OptiMOS 5 80V technology platform, offering a maximum drain-source voltage (VDS) of 80 V, a maximum continuous drain current (ID) of 247 A at Tc, and an ultra-low maximum on-resistance (RDS(on)) of 1.9 mOhm at 10 V VGS, all housed in a surface-mount PG-HSOF-8-1 (TOLL) package. The device targets high-current, high-efficiency switching applications where conduction and switching losses must be minimized simultaneously. What is an N-channel power MOSFET? A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to commutate high currents at high frequencies. N-channel enhancement-mode MOSFETs such as this one conduct when a positive gate-source voltage is applied, and they are the dominant choice for low-side and high-side switching because their higher electron mobility yields lower RDS(on) per unit silicon area than equivalent P-channel devices. Within the broader taxonomy, the IPT019N08N5ATMA1 belongs to the discrete semiconductor power MOSFET family, which itself is a subset of the MOSFET -> transistor -> semiconductor hierarchy. Key features include an avalanche-rated single-PKU die, low gate charge (Qg) for reduced driver losses, an integrated monolithic body diode optimized for third-quadrant operation, and a 100% UIL-tested production flow. The TOLL package is leadless, provides an exposed top-side cooling surface, and supports a typical power dissipation rating of 231 W at Tc, enabling compact high-current-density PCB layouts. The OptiMOS 5 technology combines a stripe-cell trench gate structure with a low-resistance substrate, producing a figure-of-merit (FOM = RDS(on) x Qg) that is among the lowest in the 80V MOSFET class. This translates directly into cooler operation, smaller magnetics in switching converters, and higher power density at the system level. Typical applications include telecom 48V power supplies, server and data-center synchronous rectification stages, industrial SMPS half-bridges, solar inverters, low-voltage motor drives, and high-current battery protection circuits in e-mobility. The wide safe-operating area (SOA) and proven body-diode ruggedness also make it well-suited for OR-ing and hot-swap controllers. When designing with this device, observe the SOA limits, especially at high VDS and DC operation, and minimize parasitic source-inductance to unlock the full switching speed of the OptiMOS 5 cell. Thermal design must assume worst-case Tj max of 175 C and derate accordingly. This page synthesizes distributor pricing, drop-in same-package alternatives, and practical design notes not collected in the manufacturer datasheet alone.
IPT022N10NF2SATMA1 - 100V 2.2mΩ StrongIRFET 2 N-MOSFET | Infineon
The Infineon IPT022N10NF2SATMA1 is a 100 V N-channel power MOSFET from the StrongIRFET 2 family, featuring an ultra-low typical on-resistance of 2.2 mΩ and a continuous drain current of 29 A at Ta (236 A at Tc), housed in a 9-pin (8+Tab) PG-HSOF-8-10 surface-mount package. The device delivers 3.8 W power dissipation at Ta and 250 W at Tc, and is qualified to industrial and automotive-grade reliability standards. An N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch where a positive gate-to-source voltage creates a conductive channel between drain and source. Within the broader semiconductor taxonomy, the StrongIRFET 2 belongs to the power MOSFET family, which is itself a subclass of discrete transistors used in switched-mode power supplies (SMPS), motor drives, and high-current DC-DC conversion. The PG-HSOF package places the die on a copper-can-style lead frame that doubles as the drain tab, drastically reducing package resistance and parasitic inductance. Key differentiating features include 2.2 mΩ typical RDS(on) at VGS=10 V, 100 V drain-source breakdown voltage (V(BR)DSS), trench-based cell architecture, and a low thermal resistance owing to the top-side exposed pad. The StrongIRFET 2 platform is optimized for low conduction loss and soft switching behavior, targeting high-frequency synchronous rectification and high-current OR-ing applications. The device is built on Infineon's advanced trench technology, which shrinks cell pitch and increases channel density per unit area, thereby reducing both RDS(on) and gate charge (Qg) for a given silicon footprint. The low figure-of-merit (FOM = RDS(on) × Qg) directly translates to lower switching and conduction losses in hard-switched and resonant topologies, enabling higher power density designs. Typical applications include synchronous rectification in 48 V telecom and server bus converters, high-current DC motor drives, hot-swap and OR-ing controllers, eMobility auxiliary power modules, and solar micro-inverters. The combination of 100 V rating and 2.2 mΩ RDS(on) makes this MOSFET a strong fit for 24 V/36 V industrial buses and 48 V mild-hybrid eMobility rails. When designing with the IPT022N10NF2S, ensure gate drive voltage of 10 V is available (logic-level gate drive is not supported). Use Kelvin-source PCB layout to keep the gate drive loop inductance below 5 nH and minimize ringing at the gate. Adequate PCB copper pour is required on the source tab to sustain the 236 A pulsed current capability at Tc. This page synthesizes distributor pricing, drop-in alternatives from both Infineon and competitor sources, and practical design notes not found in the manufacturer datasheet alone. Engineers comparing the IPT022N10NF2S against StrongIRFET 2 family members or cross-brand 100 V N-MOSFETs in the same PG-HSOF-8-10 footprint will find the structured comparison and selection guide below valuable for both design-in and sourcing decisions.
IPT026N10N5ATMA1 - 100V 2.6mΩ OptiMOS 5 MOSFET TOLL | Infineon
The Infineon IPT026N10N5ATMA1 is an N-channel OptiMOS 5 power MOSFET rated at 100 V VDS, 2.6 mΩ maximum RDS(on), and supporting up to 202 A continuous drain current at 25 °C case temperature, packaged in the surface-mount TOLL (PG-HSOF-8-1) footprint. According to the Infineon datasheet, the die delivers 214 W of power dissipation at Tc=25 °C and is optimized for high-frequency switching where conduction and switching losses both matter. The 100 V breakdown class makes it well suited to 48 V telecom rails, e-commerce server intermediate buses, and 60-72 V battery-fed motor drives. An N-channel power MOSFET is a voltage-controlled majority-carrier device in which a positive gate-source bias inverts the surface of a P-region, forming an N-channel that conducts current between drain and source. Modern trench MOSFETs such as OptiMOS 5 push cell density higher than planar generations, which simultaneously reduces on-resistance per unit area and lowers gate charge. In the broader taxonomy, the IPT026N10N5ATMA1 sits inside power MOSFETs > MOSFETs > transistors > discrete semiconductors, occupying the low-voltage high-current corner of that hierarchy. Key differentiating parameters include the 2.6 mΩ maximum RDS(on) at VGS=10 V, the sub-100 ns turn-on/turn-off transition enabled by low Qg and Qgd figures, and the small TOLL outline which shrinks the footprint by roughly 60 % versus D2PAK while doubling power density. The integrated source-connected tab improves PCB thermal spreading and allows the part to be cooled primarily through the PCB copper rather than an external heatsink at moderate loads. Architecturally, the OptiMOS 5 platform combines a fine-pitch trench gate with a shielded-cell layout to balance dv/dt ruggedness against body-diode reverse recovery. Compared to older OptiMOS 3/4 generations in the same voltage class, the IPT026N10N5 typically achieves a 30-40 % lower figure of merit (RDS(on) × Qg) which directly translates into cooler operation at high switching frequencies. Typical applications include synchronous rectification in 48 V server and telecom DC-DC converters, brushless DC motor drives for industrial fans and pumps, hot-swap and OR-ing switches on telecom boards, solar micro-inverters, and Class-D audio output stages where low conduction loss reduces thermal stress on the heatsink. When designing with this part, ensure that gate-drive voltage reaches at least 10 V for full enhancement, and place the gate resistor close to the gate pin to suppress parasitic ringing. For high di/dt loops, keep the source-return path as short as possible and use a Kelvin-source footprint if available on the PCB pad pattern. This page synthesizes distributor pricing, pin-compatible alternatives in the same TOLL/HSOF-8-1 footprint, and practical design notes not aggregated in the manufacturer datasheet.
IPT030N12N3GATMA1 - 120V 237A 3mΩ N-Channel OptiMOS 3 | Infineon
The Infineon IPT030N12N3GATMA1 is a single N-channel power MOSFET built on Infineon's OptiMOS 3 process, rated for 120 V VDS, 24 A continuous drain current (Ta) / 237 A pulsed (Tc), and a maximum on-resistance of 3 mΩ. It is housed in the surface-mount PG-HSOF-8-1 (TOLL) package, which provides an exposed drain-pad for ultra-low thermal resistance and high-current capability in compact footprints. An N-channel power MOSFET is a voltage-controlled majority-carrier device that conducts current between drain and source when a gate-source voltage exceeds the threshold. MOSFETs are the foundational switching element in modern DC-DC converters, motor drives, hot-swap circuits, and synchronous rectification. Within Infineon's portfolio, OptiMOS 3 represents a 120 V-class family optimized for low RDS(on) per unit area, fast switching, and high avalanche ruggedness — bridging the gap between 100 V-class logic-level FETs and 150 V-class high-voltage parts. Key features include 3 mΩ maximum RDS(on) at VGS=10 V, an operating junction temperature range of -55 °C to +175 °C, and automotive qualification (per the manufacturer's datasheet). The PG-HSOF-8-1 package supports high continuous current by bonding the drain tab directly to the die, while the small outline reduces board area versus D2PAK alternatives. The 120 V drain-source rating provides ample margin above 48 V telecom buses and 80 V industrial rails. Architecturally, the device uses a trench-gate vertical DMOS structure, which minimizes cell pitch and maximizes channel density. The result is a low figure-of-merit (FOM = RDS(on) × Qg) that translates into reduced conduction and switching losses, making the part well suited to high-frequency synchronous rectification in telecom and server SMPS stages. Typical applications include synchronous rectification in 48 V isolated DC-DC converters, hot-swap and OR-ing controllers in telecom/networking hardware, motor drive half-bridges, and Class-D audio amplifier output stages. The 120 V rating covers 48 V nominal buses with full derating headroom, and the 3 mΩ RDS(on) keeps conduction loss low at tens of amps. Designers should pay attention to gate-drive voltage (10 V VGS recommended for full RDS(on) performance) and to PCB layout of the source-sense Kelvin connection if exposed; a 4-layer board with generous copper pour on the HSOF tab is essential to achieve the rated 237 A pulsed current. Switching losses can dominate below 100 kHz with such low RDS(on), so gate-resistance selection matters. This page synthesizes distributor pricing for the Infineon IPT030N12N3GATMA1, drop-in alternative recommendations, and practical design notes not collected in the manufacturer datasheet.
IPT039N15N5ATMA1 - 150V 190A 3.9mΩ OptiMOS 5 Power MOSFET | Infineon
The Infineon IPT039N15N5ATMA1 is a 150 V N-channel power MOSFET from the OptiMOS™ 5 family, rated for 190 A pulsed drain current and featuring an ultra-low typical on-resistance of 3.9 mΩ at VGS=10 V, housed in a surface-mount PG-HSOF-8 (TOLL) package. It is designed as a synchronous-rectifier or primary-side switch in high-current, high-efficiency DC-DC conversion. The datasheet specifies 21 A continuous at TA=25 °C and 190 A at TC=25 °C, with 3.8 W (Ta) and 319 W (Tc) power dissipation. The OptiMOS 5 150 V technology node targets server, telecom, and e-mobility point-of-load converters where both low conduction loss and small footprint matter. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device (gate, drain, source) that switches or amplifies current in power-electronics circuits. Within the broader taxonomy, MOSFETs sit under discrete semiconductors → transistors → FETs → power MOSFETs, and are typically benchmarked against IGBTs (for >600 V) and GaN/SiC FETs (for very high-frequency or high-temperature use). The '5' in OptiMOS 5 denotes Infineon's fifth-generation trench process, which optimizes the figure-of-merit RDS(on)×Qg to reduce both conduction and switching losses. The TOLL package combines a Kelvin-source lead with a low-inductance, top-side cooling pad, enabling higher current density than D2PAK while keeping the board footprint compact. Key features include a logic-level compatible threshold (4.6 V VGS(th) typical), 100% Rg- and UIS-tested avalanche ruggedness, and a junction-to-case thermal resistance compatible with PCB copper-area cooling per the datasheet reference layout. Compared with the prior OptiMOS 3 generation at 150 V, the IPT039N15N5 typically achieves ~30 % lower RDS(on) at the same die size, which directly reduces I²R losses in high-current synchronous-rectifier positions. Typical applications include 48 V telecom and server bus converters, e-bike and e-scooter motor drives, industrial SMPS primary-side switches, and solar MPPT boost stages. In each case, the part's combination of 150 V drain rating, 190 A pulsed current, and 3.9 mΩ RDS(on) is matched to converters operating in the 20-100 kHz range where conduction loss dominates. Designers should note the asymmetrical current rating (21 A Ta vs 190 A Tc): real-world PCB thermal design limits continuous current to a value derived from copper area on the drain tab. The exposed thermal pad must be soldered to a copper pour sized per Diagram 2 of the datasheet; otherwise thermal performance will be far below the 319 W Tc specification. The HSOF-8 footprint is footprint-compatible with industry-standard TOLL land patterns from multiple vendors, but pinout (Gate-Drain-Source-KS arrangement) must be verified against the target part. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
IPT059N15N3ATMA1 - 150V 5.9mΩ 155A OptiMOS 3 Power MOSFET | Infineon
The Infineon IPT059N15N3ATMA1 is an N-channel power MOSFET built on Infineon's OptiMOS™ 3 technology, delivering a maximum drain-source voltage of 150 V, a continuous drain current of 155 A at 25 °C case temperature, and an ultra-low static drain-source on-resistance of 5.9 mΩ maximum, all housed in a thermally enhanced PG-HSOF-8-1 (TOLL) surface-mount package. The die is rated for 375 W power dissipation at Tc, with an exposed source-tab that doubles as the thermal pad and the primary current-carrying terminal. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switch used to route and modulate current in power-conversion circuits. Within the broader semiconductor hierarchy, the MOSFET sits inside the discrete-semiconductors > transistors > MOSFETs family, and the IPT059N15N3 belongs specifically to the sub-100 V-to-150 V high-current OptiMOS 3 generation that bridges standard 100 V logic-level FETs and 200 V+ high-voltage devices. The TOLL (TO-Leadless) package is a PCB-footprint-compatible evolution of the D²PAK (TO-263) family, offering smaller area and lower package inductance (~1 nH) for switching frequencies above 100 kHz. Key features include 5.9 mΩ maximum RDS(on) at VGS = 10 V, a logic-level-compatible 10 V gate drive, an integrated gate-protection Zener clamp, and a thermally efficient top-side cooling pad. The low gate charge (Qg typically 90 nC) and low Qgd reduce driver losses in hard-switched topologies, while the 150 V VDS rating provides 30 % design margin above a 100 V nominal rail. Internally, OptiMOS 3 uses Infineon's strip-cell trench layout that maximises channel width per die area, lowering both RDS(on) and Qg*Rg figure-of-merit. The result is a part that is simultaneously low-loss in conduction and fast in switching, making it well-suited to high-current synchronous rectification and motor-drive applications. Typical applications include 48 V forklift and light-electric-vehicle motor drives, telecom point-of-load (POL) converters, eMobility battery disconnect switches, hot-swap controllers, and high-current DC-DC buck stages. The TOLL footprint suits high-density PCB designs where D²PAK would consume too much area. Design consideration: at 155 A continuous, PCB copper spreading and via arrays under the source tab are critical; the TOLL package's low thermal resistance only helps if the board is designed as a heatsink. For maximum SOA, keep junction temperature below 150 °C and use a 10 V VGS drive with a gate-source resistor in the 10–47 Ω range to control ringing. This page synthesises distributor pricing, drop-in alternative MPNs, and practical TOLL-layout notes not consolidated in the Infineon datasheet.
IPT067N20NM6ATMA1 - 200V 137A OptiMOS 6 Power MOSFET | Infineon
The Infineon Technologies IPT067N20NM6ATMA1 is a 200V-rated N-channel OptiMOS 6 power MOSFET optimized for high-current switching in drives and solar applications, delivering 137A continuous drain current at 25C case temperature with an extremely low typical on-resistance in a compact PG-HSOF-8-1 (8-pin plus exposed tab) surface-mount package. According to the Infineon product page, this part achieves 42% lower RDS(on) than its predecessor generation, making it ideal for hard-switching topologies where conduction loss dominates the thermal budget. The device is qualified for industrial-grade operating profiles and supports surface-mount assembly with high-current PCB land patterns. An N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled majority-carrier switch that conducts current between drain and source when the gate-source voltage exceeds its threshold. OptiMOS is Infineon's proprietary power MOSFET platform that uses advanced trench-gate silicon technology to minimize RDS(on) and gate charge, outperforming older planar generations on switching loss and figure-of-merit (FOM). Within the broader semiconductor taxonomy, MOSFETs belong to discrete semiconductors and specifically to the power-FET family used as the active switching element in converters, inverters, motor drives, and synchronous rectification stages. Key specifications include a 200V drain-source breakdown voltage (VDS max), a continuous drain current rating of 15.3A at TA=25C and 137A at TC=25C, a power dissipation rating of 3.8W at TA and 300W at TC, and a low gate charge suitable for high-frequency operation. The PG-HSOF-8-1 package exposes the drain tab to the PCB for direct heatsinking, dramatically lowering thermal resistance compared to conventional SO-8 packages. The OptiMOS 6 cell technology improves switching figures-of-merit (Qg x RDS(on)) and reduces body-diode reverse-recovery charge, supporting high-efficiency bridge and half-bridge circuits. Typical applications span solar inverters, industrial motor drives, telecom DC-DC converters, battery formation equipment, synchronous rectification in switch-mode power supplies, and high-current hot-swap controllers. The combination of 200V rating and 137A continuous current suits mid-power three-phase inverter stages and full-bridge converters in industrial automation. The OptiMOS 6 generation specifically targets lower conduction loss and improved avalanche ruggedness relative to OptiMOS 5, supporting longer product lifetimes in solar and drive applications. When designing with this MOSFET, ensure that the PCB copper area beneath the exposed tab is sized to keep the junction temperature below 150C at the worst-case continuous load. Gate-drive voltage should be at least 10V to fully enhance the channel, and a small gate-source resistor (10-100 kohm) is recommended to prevent inadvertent turn-on from dv/dt coupling. The OptiMOS 6 family offers best-in-class figure-of-merit when used in hard-switched bridges at 50-200 kHz switching frequency. This page synthesizes Infineon datasheet specifications, distributor pricing snapshots from 2026-09-14, and drop-in alternative MPNs that share the same PG-HSOF-8-1 footprint - engineering context not consolidated on a single manufacturer page.
IPT60R022S7XTMA1 - 600V 22mΩ CoolMOS S7 MOSFET | Infineon
The Infineon IPT60R022S7XTMA1 is a 600V N-channel CoolMOS S7 superjunction power MOSFET in a TOLL (PG-HSOF-8-2) surface-mount package, rated for 23A continuous drain current and 390W power dissipation at Tc=25°C. It features a typical on-state resistance of 22 mΩ at VGS=10V and is engineered for the lowest RDS(on) per die area in Infineon's high-voltage superjunction portfolio. A power MOSFET is a voltage-controlled semiconductor switch that regulates or converts energy by modulating current flow between drain and source terminals. The CoolMOS S7 family represents Infineon's latest-generation 600V-950V superjunction (SJ) technology, positioned within the broader power MOSFET hierarchy: SJ MOSFET -> power MOSFET -> discrete semiconductor -> power conversion component. Superjunction devices replace the conventional planar DMOS structure with alternating P/N drift regions, dramatically reducing RDS(on) x area product and improving switching efficiency at high blocking voltages. Key specifications include 600V drain-source breakdown voltage, 22 mΩ maximum RDS(on) at VGS=10V, integrated gate-source protection Zener diodes, and ultra-low gate charge optimized for hard-switching topologies. The S7 generation targets industrial SMPS, solar inverters, and motor drives where conduction loss dominates over switching loss. The TOLL (TO-Leadless) package provides a Kelvin-source connection and creepage distances that satisfy industrial 600V isolation requirements. The device uses Infineon's CoolMOS S7 superjunction cell design, which achieves industry-leading figure-of-merit (FOM = RDS(on) x Qoss) for low-frequency switching applications. Compared to the prior C6/C7 generations, S7 increases the safe operating area for hard commutation and supports larger peak avalanche currents, simplifying snubber design in hard-switched bridge topologies. Typical applications include industrial switched-mode power supplies (SMPS), telecom rectifiers, solar string inverters, electric vehicle charging stations (on-board and off-board), and 3-phase motor drives. It is also used in uninterruptible power supplies (UPS) and welding inverters where its 600V rating and low conduction loss translate directly into higher system efficiency. When designing with this MOSFET, use a Kelvin-source connection to the TOLL package's source-sense pin to suppress gate-drive oscillations caused by source inductance. Provide a 10Ω gate resistor and ensure VGS(th) margin at the lowest operating temperature, as CoolMOS S7 threshold voltage shifts positive at cold temperatures and may not fully enhance at -40°C without sufficient gate drive. This page synthesizes distributor pricing, drop-in alternatives from the CoolMOS family, and practical PCB layout guidance not consolidated in the manufacturer datasheet, giving power designers a single reference for component selection and BOM risk mitigation.
IPT60R050G7XTMA1 - 600V 44A 50mΩ CoolMOS G7 MOSFET | Infineon
The Infineon IPT60R050G7XTMA1 is a 600 V, 44 A N-channel CoolMOS™ G7 power MOSFET housed in the surface-mount PG-HSOF-8-2 (TO-Leadless) package with a Kelvin-source connection. It features a maximum drain-source on-resistance of 50 mΩ, a continuous drain current of 44 A at Tc, and a maximum power dissipation of 245 W at Tc. The G7 generation uses Infineon's C7 Gold superjunction technology to deliver best-in-class figure-of-merit (FoM) for RDS(on)*Eoss and RDS(on)*Qg, targeting high-frequency, high-density switched-mode power supplies. A power MOSFET is a voltage-controlled semiconductor switch that conducts current between drain and source when a sufficient gate-source voltage is applied, and blocks voltage when off. Within the power-conversion hierarchy, MOSFETs sit inside switch-mode power supplies (SMPS) alongside the controller IC, magnetic components, and bulk capacitors. The CoolMOS G7 family is positioned as a high-performance superjunction (SJ) MOSFET line, replacing older planar 600 V parts with much lower switching and conduction losses. Key differentiating specifications of the IPT60R050G7XTMA1 include a typical gate charge of approximately 35 nC, a low output capacitance (Eoss) optimized for soft switching, an intrinsic body diode with robust reverse-recovery behavior, and a Kelvin-source pin that decouples the gate-drive return path from the main power current. The PG-HSOF-8-2 (TOLL) package features a top-side cooling pad and a very low thermal resistance, enabling high continuous current without external heatsinking on the bottom copper. The G7 platform improves switching loss by roughly 30% versus the previous P6 generation and reduces gate charge by ~50%, allowing higher switching frequencies (130-300 kHz) without efficiency penalty. The Kelvin-source pin eliminates the source-inductance-induced gate-oscillation problem seen in standard TO-220/TO-247 layouts, which is critical at the high di/dt of superjunction MOSFETs. Typical applications for the IPT60R050G7XTMA1 include telecom/server SMPS, industrial welding and induction heating, solar inverters, EV on-board chargers (OBC) and DC-DC stages, and high-end PC silver-box ATX power supplies. The part is also widely used in LLC half-bridge and PFC boost stages where low Qg and low Eoss maximize efficiency at 100 kHz+ switching frequencies. When designing with this part, ensure the PCB layout uses the Kelvin-source pin (pin 8) for the gate-driver return rather than the main power source pad, otherwise switching loss and EMI will degrade significantly. Use a TVS clamp on the gate-source path if the part is exposed to dv/dt-induced turn-on in half-bridge topologies. This page synthesizes distributor pricing, drop-in alternatives, and practical layout notes for the IPT60R050G7XTMA1 not consolidated on a single manufacturer or distributor page.
IPT65R040CFD7XTMA1 - 650V 34mOhm CoolMOS CFD7 MOSFET | Infineon
The Infineon IPT65R040CFD7XTMA1 is a 650 V N-channel power MOSFET from the CoolMOS CFD7 family, featuring a typical on-state resistance of 34 mOhm and a continuous drain current of 63 A, housed in a surface-mount PG-HSOF-8-2 (also referenced as 8-HSOF) package with an exposed top-side cooling tab. As the latest extension of the 500 V to 950 V CFD7 voltage class portfolio, it succeeds the 650 V CoolMOS CFD2 with materially improved switching performance and thermal behavior for resonant topologies. What is a CoolMOS MOSFET? A CoolMOS device is a high-voltage superjunction (SJ) power MOSFET, a transistor category that uses alternating P/N epitaxial columns to break the classic silicon RDS(on) x area trade-off, achieving very low on-resistance per die area. CoolMOS parts sit within the broader hierarchy MOSFET -> power MOSFET -> superjunction MOSFET -> high-voltage MOSFET -> discrete semiconductor. They are the workhorse of switched-mode power supplies (SMPS), where high breakdown voltage, low gate charge, and fast body-diode recovery are decisive. Key features of the IPT65R040CFD7 include 650 V drain-source breakdown voltage (V(BR)DSS), 34 mOhm maximum RDS(on) at VGS=10 V, integrated fast body diode with low Qrr suited to zero-voltage-switching (ZVS), and improved gate-charge characteristics versus CFD2. The exposed top-side cooling tab of the PG-HSOF-8-2 package enables direct attachment to a heatsink or thermal interface material, drastically lowering thermal resistance versus conventional SO-8 footprints and supporting higher continuous current in the same board area. The device uses Infineon's second-generation superjunction cell design refined for resonant switching. Compared with the prior CFD2 generation, the CFD7 cuts output charge (Qoss) and gate charge (Qg) losses while maintaining the same 650 V rating, which is the dominant factor in LLC, phase-shift full-bridge (PSFB), and ZVS totem-pole PFC efficiency. The fast body diode also eliminates the need for an external anti-parallel diode in many bridge configurations. Typical applications include LLC resonant converters for telecom and server power, phase-shift full-bridge converters for eMobility chargers, ZVS totem-pole PFC stages in industrial SMPS, solar inverters, and EV onboard chargers. The wide 650 V rating provides ample margin for 400 V DC bus systems and universal-input PFC front ends. When designing with the IPT65R040CFD7, prioritize PCB layout that minimizes source-inductance loop area between the gate-driver return and the Kelvin-source pin. Use a low-impedance thermal interface between the top tab and the heatsink; PG-HSOF-8-2 dissipates heat primarily through the top tab, not the PCB pad. This page synthesizes distributor pricing across DigiKey, Mouser and LCSC, drop-in pin-compatible alternatives, and practical design notes not found in the standalone manufacturer datasheet, providing an engineering-grade reference in one place.
IPTC017N12NM6ATMA1 - 120V 1.7mΩ 331A OptiMOS 6 MOSFET | Infineon
The Infineon IPTC017N12NM6ATMA1 is an N-channel power MOSFET built on Infineon's OptiMOS™ 6 120 V technology, delivering an ultra-low typical on-state resistance of 1.7 mΩ and a continuous drain current of up to 331 A (Tc) in a thermally enhanced PG-HDSOP-16 surface-mount package. The device is rated for VDS = 120 V, gate threshold VGS(th) = 2.4 V typical at 10 V drive, and total gate charge QG = 141 nC, achieving an outstanding FOM (RDS(on) × QG) that suits high-frequency, high-current switching stages. A power MOSFET is a voltage-controlled majority-carrier switch that conducts between drain and source when VGS exceeds threshold. OptiMOS 6 belongs to the latest generation of Infineon trench MOSFETs, sitting inside the broader hierarchy: trench MOSFET -> power MOSFET -> discrete semiconductor -> power management building block. Compared to planar MOSFETs and earlier OptiMOS generations, OptiMOS 6 reduces RDS(on) per unit silicon area and shrinks switching losses, enabling smaller magnetics and higher power density in switched-mode power topologies. Key differentiating specifications include 1.7 mΩ max RDS(on) at VGS = 10 V, 32 A continuous Id in free air (Ta) rising to 331 A with case cooling, 2.4 nF Ciss, 11000 pF Coss, 120 V VDS rating, and an exposed-source PG-HDSOP-16 lead-frame for top-side cooling. The combination of low Rds(on) and low Qg translates directly into lower conduction loss and lower drive loss - both critical at the multi-kW power levels this part targets. Architecturally, the device uses Infineon's latest 120 V trench cell with an optimized source-contact and clip-bonded lead frame, achieving a thermal resistance (RthJC) suitable for >300 A pulsed operation. The 2.4 nF input capacitance keeps driver-stage requirements modest, while 395 W power dissipation (Tc) enables compact heat-sunk designs without immediate derating. Typical applications include 48 V telecom DC/DC converters, high-current OR-ing and hot-swap controllers, eMobility auxiliary power stages, server 48 V to point-of-load intermediate bus converters, and motor-drive half-bridges. The 120 V rating also covers 80-100 V battery and industrial bus rails with substantial transient margin. Design consideration: a 10 V gate drive is required to fully enhance the channel; using only 4.5 V will leave the device in its linear region, dramatically increasing losses. Keep the gate-loop inductance below 5 nH by placing the gate driver within 10 mm of the gate pin to avoid ringing and dv/dt-induced turn-on. This page synthesizes distributor pricing, drop-in alternatives, application notes, and practical PCB layout guidance not consolidated in the manufacturer datasheet.
IPTC039N15NM5ATMA1 - 150V 190A OptiMOS 5 N-Channel MOSFET | Infineon
The Infineon IPTC039N15NM5ATMA1 is an OptiMOS 5 N-channel power MOSFET rated at 150 V drain-source voltage and 190 A continuous drain current, housed in a top-side-cooled PG-HDSOP-16-2 surface-mount package. It combines an industry-low RDS(on) of 3.9 mOhm typical with 74 nC typical gate charge, enabling reduced conduction and switching losses in high-current power-conversion stages. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switching device used as the active element in switching power supplies, motor drives, and load switching. The N-channel variant conducts when the gate is pulled high relative to the source. MOSFETs sit within the power-management IC hierarchy as discrete semiconductor switches, complementing gate-driver ICs (such as the IR2109SPBF and IRSM808-105MH), DC-DC controllers, and protection supervisors in a typical power-conversion block. Key features include low RDS(on) of 3.9 mOhm at VGS = 10 V, optimized switching performance via 74 nC typical Qg, and 319 W power dissipation capability at TC = 25 C. The PG-HDSOP-16-2 package uses top-side cooling for direct attachment to thermal interfaces, which is critical in compact assemblies where PCB-bottom copper alone cannot dissipate the heat. The die is qualified for high-reliability switching converters operating at switching frequencies from 50 kHz to 1 MHz. The IPTC039N15NM5 utilizes Infineon's OptiMOS 5 trench technology, balancing low figure-of-merit (FOM = RDS(on) x Qg) for hard-switched topologies such as synchronous rectification, half-bridge, and full-bridge converters. Low FOM directly translates into higher converter efficiency at fixed switching frequency, or higher frequency operation at fixed efficiency. Typical applications include e-vehicle traction inverters and onboard chargers, cordless power-tool motor drives, industrial SMPS synchronous rectifiers, and 48 V mild-hybrid DC-DC converters. The 150 V rating provides 25-30% headroom above the 100-120 V DC-link rails common in 48 V automotive systems. When designing with this device, maintain VGS drive above 10 V for full RDS(on) rating and ensure the gate-driver can source/sink the peak gate current required by the 74 nC Qg. The top-side cooling pad must be soldered to a thermal spreader for full 319 W dissipation at TC = 25 C. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, enabling faster component selection and second-source qualification for engineers designing high-current 150 V power stages.
IPTC054N15NM5ATMA1 - 150V 143A 5.4mΩ OptiMOS 5 MOSFET | Infineon
The Infineon IPTC054N15NM5ATMA1 is a 150 V N-channel OptiMOS™ 5 power MOSFET in a 16-pin PG-HDSOP-16-2 surface-mount package, delivering 143 A continuous drain current at 25 °C case temperature and a maximum on-resistance of 5.4 mΩ at VGS = 10 V and ID = 50 A. It is rated for 17.5 A continuous drain current at ambient (TA = 25 °C) and supports up to 250 W power dissipation at TC = 25 °C. The device uses Infineon's OptiMOS™ 5 trench technology optimized for low RDS(on) and high switching performance. An N-channel power MOSFET is a voltage-controlled semiconductor switch that conducts current between drain and source when the gate-source voltage exceeds a threshold. Power MOSFETs are fundamental switching devices in switched-mode power supplies (SMPS), motor drives, and DC-DC conversion stages, sitting within the broader hierarchy of discrete semiconductors > transistors > MOSFETs > power MOSFETs. The IPTC054N15NM5 belongs to Infineon's IPT (Infineon Power Transistor) family targeted at top-cooled and high-current-density power tools and e-mobility applications. Key differentiating features include an ultra-low RDS(on) of 5.4 mΩ at 50 A, high peak current capability of 143 A, low typical gate charge of 58 nC, and a wide operating junction temperature range of -55 °C to +175 °C. The PG-HDSOP-16-2 package features an exposed top-side thermal pad enabling direct top-side cooling - a major advantage in space-constrained power tools, e-bike controllers, and battery-powered industrial equipment. The package's low thermal resistance supports 250 W dissipation at TC = 25 °C with proper heatsinking. The PG-HDSOP-16-2 (HDSOP = Heat-Dissipating Small Outline Package, 16 leads) is a top-side cooled variant of the standard SO-16 footprint. The exposed die attach pad on top of the package mounts against a heatsink or thermal interface material, providing a direct thermal path from the silicon junction to the heatsink. This topology achieves lower junction-to-ambient thermal resistance than bottom-cooled SO-8 or DFN parts in similar PCB areas, making the IPTC054N15NM5 well-suited to compact half-bridge and full-bridge converter designs. Typical applications include cordless power tools (drills, saws, leaf blowers), e-mobility controllers (e-bikes, e-scooters, low-speed EVs), battery management system (BMS) protection circuits, DC-DC buck/boost converters, motor drive half-bridges, and high-current load switches in industrial automation. The 150 V drain-source rating provides substantial headroom above 48 V battery packs and 72 V e-mobility rails. When designing with this MOSFET, ensure the gate drive voltage reaches at least 10 V for full RDS(on) rating, and keep gate-loop inductance below 5 nH to avoid ringing at high di/dt. Place the gate resistor close to the gate pin and use a Kelvin source connection when the package supports it. The top-side thermal pad must be soldered or thermal-epoxy bonded to a heatsink for full 250 W dissipation. This page synthesizes distributor pricing, drop-in alternatives from the same Infineon OptiMOS 5 IPT family, and practical thermal/layout design notes not consolidated in the manufacturer datasheet.