MOSFET
製品 (1287)
STL35N75LF3 - 35V N-Channel Power MOSFET | STMicroelectronics
The STL35N75LF3 is an N-channel Power MOSFET from STMicroelectronics, designed for high-efficiency power conversion in a compact PowerFLAT 5x6 package. It features a drain-source voltage (VDS) of 35V and a continuous drain current (ID) of 35A, making it suitable for a wide range of power management applications. The device is optimized for low on-resistance (RDS(on)) and fast switching, ensuring minimal conduction and switching losses. A Power MOSFET is a type of field-effect transistor used for switching and amplifying electronic signals in power electronics. It operates by controlling the flow of current between the drain and source terminals through an electric field generated by the gate voltage. Power MOSFETs are essential components in power management ICs, DC-DC converters, motor drivers, and battery protection circuits, where efficient switching and low power dissipation are critical. Key features of the STL35N75LF3 include a low gate charge (Qg) for reduced switching losses, a low thermal resistance for effective heat dissipation, and a wide operating temperature range. The device is RoHS compliant and lead-free, meeting modern environmental standards. Its PowerFLAT 5x6 package offers a compact footprint with excellent thermal performance, enabling high-density PCB designs. The STL35N75LF3 utilizes STMicroelectronics' advanced strip-layout technology, which minimizes on-resistance and parasitic capacitances. This results in improved efficiency and reduced electromagnetic interference (EMI) in high-frequency switching applications. The device also features an integrated gate-source ESD protection, enhancing its robustness in harsh operating environments. Typical applications include DC-DC converters, load switches, motor control, and battery management systems. In DC-DC converters, the low RDS(on) and fast switching reduce power losses, improving overall converter efficiency. In motor control, the high current capability and thermal performance ensure reliable operation under continuous load conditions. When designing with the STL35N75LF3, ensure proper gate drive voltage to fully enhance the channel and minimize conduction losses. Adequate PCB copper area and thermal vias are recommended to dissipate heat effectively, especially in high-current applications. The device's low gate charge allows for direct driving from microcontrollers or gate driver ICs, simplifying the design.
STL60N3LLH5 - 30V, 6.3mOhm, 17A MOSFET | STMicroelectronics
The STMicroelectronics STL60N3LLH5 is an N-channel 30 V power MOSFET featuring 0.0063 ohm on-state resistance, a 17 A rated drain current, and a PowerFLAT 5x6 mm surface-mount package. Built with STripFET V technology, the device is designed for compact, high-efficiency switching power stages where low conduction loss, fast switching, and power density are important. A power MOSFET is a voltage-controlled semiconductor used to switch or rectify current in electronic circuits. This N-channel device belongs to the hierarchy MOSFET, discrete semiconductor, and power-management component. Its low RDS(on) reduces voltage drop and heat generated during on-state conduction, while its surface-mount package supports automated assembly and compact PCB layouts. The supplied manufacturer datasheet identifies an N-channel 30 V device with 0.0063 ohm RDS(on), 17 A nominal current capability, and STripFET V technology optimized for very low on-resistance and a strong RDS(on)-Qg figure of merit. These characteristics suit low-voltage DC power conversion, load switching, motor-control stages, and synchronous power-conversion circuits where every conduction-loss reduction improves efficiency. The STL60N3LLH5 combines low on-state resistance with a low-profile PowerFLAT package measuring 5x6 mm. Its small land pattern can reduce board area compared with larger molded packages, provided that copper area and thermal vias are adequate. Because MOSFET performance depends strongly on switching frequency, gate-drive voltage, duty cycle, and cooling, the electrical limits and thermal conditions must be evaluated together rather than treated as independent ratings. Typical uses include laptop and desktop power conversion, USB power switches, portable equipment, industrial control boards, and compact motor or actuator drivers. The device is especially relevant to 30 V or lower systems where the switching element must conduct frequent current transitions without introducing substantial conduction loss. A low-voltage DC/DC stage can use it on the high side of a synchronous buck converter, while a load-switch application benefits directly from its low RDS(on). PCB design should use short, wide copper paths for drain and source, a Kelvin-style source connection when measuring current accurately, and an unobstructed gate trace with a nearby gate resistor. Input and output decoupling should be placed close to the associated circuit nodes. Thermal management remains critical because conduction loss scales with RDS(on), current, and duty cycle; a low package resistance does not eliminate the need to spread heat through the PCB. This product record combines the verified manufacturer datasheet, distributor listings, and component-search results. It highlights the STL60N3LLH5's core switching characteristics while separating verified ratings from information that still requires confirmation from the manufacturer datasheet before a production release.
STL80N4LLF3 - 40V 80A 4.2mOhm N-Ch PowerFLAT MOSFET | ST
The STMicroelectronics STL80N4LLF3 is an N-channel 40 V, 80 A STripFET Power MOSFET housed in a surface-mount PowerFLAT (5x6) package, engineered for synchronous-rectification and DC-DC conversion applications. It features an ultra-low on-resistance of 4.2 mOhm (typ) at VGS=10 V, a 40 V drain-source breakdown voltage, and 80 A continuous drain current at Tc, with 80 W power dissipation, making it suited for high-current switching stages in compact form factors. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch used to efficiently route or modulate current in power-conversion circuits. STripFET is STMicroelectronics' proprietary trench-gate technology that minimizes RDS(on) and gate charge for low conduction and switching losses. This part sits in the hierarchy: N-channel MOSFET -> power MOSFET -> discrete semiconductor, and is most commonly deployed as a synchronous rectifier in buck/boost converters where it replaces the lossy Schottky diode to improve overall efficiency. Key features include 4.2 mOhm maximum RDS(on) at VGS=10 V, low gate charge optimized for high-frequency switching (typical 300 kHz to 1 MHz), a logic-level-compatible VGS(th) range, 100% Rg2-T tested avalanche rating, and compliance with RoHS directives. The package outline of 5x6 mm with an exposed drain pad provides a low thermal-resistance path (Rthj-c typically ~1 C/W per published ST datasheets), allowing the device to sustain high pulsed currents in motor-drive and hot-swap scenarios. The STL80N4LLF3 leverages STripFET III trench technology, which reduces both on-state conduction loss and switching loss compared to planar MOSFETs of the same die area. The combination of low Qgd and low Qrr supports high-side and low-side synchronous-rectifier use in buck converters supplying multi-rail CPU/GPU core voltages, where efficiency at light load and thermal density are both critical. Typical applications include synchronous rectification in server/server blade-side DC-DC VRMs, notebook and tablet buck converters, telecom 48 V intermediate bus converters, motor-drive H-bridges, and hot-swap / OR-ing circuits in industrial power systems. Its 40 V rating provides comfortable margin for 12 V and 19 V bus rails while keeping RDS(on) low. When designing with this part, evaluate gate-drive voltage carefully: at VGS=4.5 V the on-resistance roughly doubles versus VGS=10 V, so for logic-level PWM controllers ensure the driver can pull the gate to at least 8 V to realize the published low RDS(on). Also respect the SOA curve under pulsed loads and provide adequate copper on the drain pad to keep Rthj-a within budget. This page synthesizes distributor stock indicators, pin-compatible drop-in alternatives, and practical layout/thermal design notes not consolidated in the manufacturer datasheet.
STL8N60M6 - 600V 8A N-Channel Power MOSFET | STMicroelectronics
The STL8N60M6 is an N-channel Power MOSFET from STMicroelectronics, part of the MDmesh M6 series, designed for high-efficiency power conversion applications. It features a breakdown voltage of 600V and a continuous drain current of 8A at 25°C, with a low on-resistance of 0.55 ohm typical. The device is housed in a PowerFLAT 5x6 HV package, which offers excellent thermal performance and a compact footprint for space-constrained designs. A Power MOSFET is a type of field-effect transistor optimized for switching and amplification in power electronics. It operates by controlling the flow of current through a semiconductor channel using an electric field, allowing efficient switching at high voltages and currents. Power MOSFETs are fundamental building blocks in power management systems, including switch-mode power supplies, DC-DC converters, and motor drives, where they serve as the primary switching elements. The MDmesh M6 series represents ST's latest technology for high-voltage MOSFETs, combining low on-resistance with fast switching to minimize conduction and switching losses. Key features of the STL8N60M6 include a low gate charge (Qg) of 18 nC typical, which enables fast switching and reduces driver requirements, and a low reverse recovery charge (Qrr) for improved performance in bridge topologies. The device also features a wide operating junction temperature range from -55°C to +150°C, making it suitable for harsh environments. The PowerFLAT 5x6 HV package provides a low thermal resistance of 2.5°C/W (junction-to-case), allowing efficient heat dissipation in high-power applications. The STL8N60M6 utilizes ST's MDmesh M6 technology, which employs a vertical structure with a deep trench gate to achieve a favorable trade-off between on-resistance and breakdown voltage. This technology reduces the specific on-resistance (RDS(on) x area) compared to previous generations, enabling higher current density and lower conduction losses. The device also incorporates an integrated gate-source ESD protection, enhancing robustness in manufacturing and operation. Typical applications include switch-mode power supplies (SMPS), power factor correction (PFC) circuits, LED lighting drivers, and DC-DC converters for industrial and consumer electronics. The 600V rating makes it suitable for universal input (85-265V AC) offline power supplies, where it can handle the high voltage stress during switching transients. The low on-resistance and fast switching characteristics contribute to high efficiency, reducing heat generation and improving system reliability. When designing with the STL8N60M6, ensure proper gate drive voltage (typically 10V) to achieve the lowest on-resistance. The device is fully RoHS compliant and halogen-free, meeting modern environmental standards. For optimal thermal performance, solder the exposed pad to a large copper area on the PCB and provide adequate airflow or heatsinking in high-power applications.
STP10N60M2 - 600V 10A N-Channel Power MOSFET | STMicroelectronics
The STP10N60M2 is an N-channel Power MOSFET from STMicroelectronics, part of the MDmesh M2 series, designed for high-efficiency power conversion applications. It features a breakdown voltage of 600V and a continuous drain current of 10A at 25°C, with a low on-resistance of 0.55 ohm typical. The device is housed in a TO-220 package, providing excellent thermal performance for through-hole mounting. A power MOSFET is a type of field-effect transistor specifically designed to handle significant power levels. It operates by controlling the flow of current through a semiconductor channel using an electric field, allowing for efficient switching and amplification in power circuits. Power MOSFETs are fundamental components in power electronics, serving as switches in power supplies, motor drives, and inverters. They are part of the broader category of discrete semiconductors, which also includes diodes, thyristors, and IGBTs, and are essential for managing and converting electrical energy in modern electronic systems. Key features of the STP10N60M2 include a very low gate charge (Qg) of 25 nC, which enables fast switching and reduced switching losses, and a high dv/dt capability for ruggedness in demanding applications. The device also features an intrinsic body diode with fast recovery characteristics, making it suitable for bridge topologies. The MDmesh M2 technology provides an excellent figure of merit (RDS(on) x Qg), balancing conduction and switching losses for high efficiency. The STP10N60M2 utilizes ST's MDmesh M2 vertical structure, which reduces the on-resistance and gate charge compared to conventional planar MOSFETs. This technology enhances the device's performance in high-frequency switching applications, where minimizing losses is critical. The device's low thermal resistance (junction-to-case) of 1.67 °C/W allows efficient heat dissipation, enabling reliable operation at high power levels with appropriate heatsinking. Typical applications include switch-mode power supplies (SMPS), power factor correction (PFC) circuits, LED lighting drivers, and industrial power converters. The 600V rating makes it suitable for universal input (85-265V AC) offline power supplies, while the 10A current capability supports power levels up to several hundred watts. The fast switching characteristics are ideal for active PFC stages operating at 100-200 kHz. When designing with this device, ensure proper gate drive voltage (typically 10V) to achieve the specified low on-resistance. The gate-source voltage must not exceed ±25V, and a gate resistor is recommended to control switching speed and reduce EMI. Adequate heatsinking is essential for continuous operation at high currents, and a snubber circuit may be required for inductive load switching.
STP12N60M2 - 12A, 600V N-Channel Power MOSFET | STMicroelectronics
The STP12N60M2 is an N-channel Power MOSFET from STMicroelectronics, part of the MDmesh M2 series, designed for high-efficiency power conversion applications. It features a breakdown voltage of 600V and a continuous drain current of 12A at 25°C, with a low on-resistance of 0.38Ω typical. The device is housed in a TO-220 package, providing excellent thermal performance for through-hole mounting. A Power MOSFET is a type of field-effect transistor optimized for switching and amplification in power electronics. It operates by controlling the conductivity between the drain and source terminals through an insulated gate voltage. Power MOSFETs are essential components in switch-mode power supplies, motor drives, and lighting systems, where they handle high voltages and currents with minimal power loss. They are part of the broader family of discrete semiconductors, which also includes diodes, thyristors, and IGBTs. Key features of the STP12N60M2 include a low gate charge (Qg) of 30nC, which enables fast switching and reduced switching losses, and a high dv/dt capability for robust performance in hard-switching topologies. The device also features 100% avalanche tested, ensuring reliability under extreme conditions. Its low on-resistance minimizes conduction losses, improving overall system efficiency. The STP12N60M2 utilizes ST's MDmesh M2 technology, which combines a vertical structure with a charge-balanced layout to achieve low on-resistance and high breakdown voltage simultaneously. This technology reduces the figure of merit (RDS(on) × Qg), making it suitable for high-frequency applications where efficiency is critical. The device also includes an intrinsic body diode with fast recovery characteristics, beneficial for bridge topologies. Typical applications include switch-mode power supplies (SMPS), power factor correction (PFC) circuits, LED lighting drivers, and motor control systems. In SMPS, the STP12N60M2 can be used in the primary side of flyback or forward converters, where its high voltage rating and low losses contribute to compact, efficient designs. In PFC circuits, it handles high voltage stress while maintaining low conduction losses. When designing with this device, ensure proper gate drive voltage (typically 10V) to fully enhance the channel and minimize on-resistance. Consider the thermal resistance of the TO-220 package (62.5°C/W junction-to-ambient) and use a heatsink for high-power applications. Also, provide adequate gate protection against voltage spikes, as the maximum gate-source voltage is ±25V.
STP15N60M2 - 15A, 600V N-Channel Power MOSFET | STMicroelectronics
The STP15N60M2 is an N-channel Power MOSFET from STMicroelectronics, part of the MDmesh M2 series, designed for high-efficiency power conversion applications. It features a breakdown voltage of 600V and a continuous drain current of 15A at 25°C, with a low on-resistance of 0.29 ohm typical. The device is housed in a TO-220 package, providing excellent thermal performance for through-hole mounting. A Power MOSFET is a type of field-effect transistor optimized for switching and amplification in power electronics. It operates by controlling the conductivity between the drain and source terminals through an insulated gate voltage. Power MOSFETs are fundamental building blocks in switch-mode power supplies, motor drives, and lighting systems, where they function as high-speed switches. They are part of the broader family of power semiconductor devices, which also includes IGBTs and thyristors, but MOSFETs are preferred for high-frequency switching due to their fast switching speeds and low drive power requirements. Key features of the STP15N60M2 include a low gate charge (Qg) of 30 nC, which reduces switching losses and enables high-frequency operation. The device also offers a fast body diode with low reverse recovery charge, making it suitable for bridge topologies. The MDmesh M2 technology provides an excellent figure of merit (RDS(on) x Qg), balancing conduction and switching losses for improved efficiency. The STP15N60M2 utilizes ST's MDmesh M2 vertical structure, which reduces on-resistance and gate charge compared to conventional planar MOSFETs. This technology enhances the device's switching performance, allowing designers to achieve higher power density in compact designs. The device is avalanche-rated, with an avalanche energy of 300 mJ, ensuring robustness in inductive load switching applications. Typical applications include switch-mode power supplies (SMPS), power factor correction (PFC) circuits, LED lighting drivers, and motor control inverters. The 600V rating makes it suitable for universal input (85-265V AC) offline power supplies, where it can handle the high voltage stress during switching transients. When designing with this device, ensure proper gate drive voltage (typically 10V) to achieve the lowest on-resistance. The TO-220 package requires adequate heatsinking for high-power applications; the thermal resistance junction-to-case is 1.6°C/W, so a heatsink is necessary when dissipating more than a few watts.
STP160N3LL - 30V 120A 2.5mOhm N-Ch MOSFET | STMicroelectronics
The STP160N3LL is an N-channel power MOSFET from STMicroelectronics, fabricated with STripFET H6 trench-gate technology. It is rated for 30 V drain-source voltage and 120 A continuous drain current in a through-hole TO-220 package, with a typical on-resistance of only 2.5 mOhm and power dissipation of 136 W at Tc=25C. A power MOSFET is a voltage-controlled semiconductor switch in which the gate field modulates conduction between drain and source. As a member of the discrete semiconductors family (alongside diodes, thyristors and IGBTs), it is the workhorse of power electronics, sitting within the hierarchy: MOSFET -> transistor -> discrete semiconductor. The STP160N3LL is a low-voltage, high-current switching transistor optimized for efficiency-critical power stages. Its headline feature is the very low 2.5 mOhm typical RDS(on), which directly minimizes conduction losses (P = I2 x R) in high-current paths. The 120 A / 136 W ratings and 175 C maximum junction temperature provide substantial thermal margin. Rth(j-case) of 1.1 C/W allows efficient heat transfer to a heatsink in TO-220 through-hole mounting. Technically, the STripFET H6 trench gate structure achieves low on-resistance with reduced gate charge (60 nC typical) and input capacitance (4200 pF), enabling faster switching and lower switching losses than planar MOSFET designs. These parameters matter for gate-drive sizing and switching-frequency selection in synchronous rectification and DC-DC conversion. Typical applications include synchronous rectification in high-efficiency power supplies, DC-DC converters, motor control, and battery management systems where low conduction loss at 30 V-class rails is essential. Design tip: drive the gate with the specified 10 V gate-source voltage to fully enhance the channel and achieve the 2.5 mOhm figure; keep high-current PCB loops short and wide to limit parasitic inductance, and budget a heatsink based on actual dissipation.
STP16NF06L - 16A, 60V N-Channel Power MOSFET | STMicroelectronics
The STP16NF06L is an N-channel Power MOSFET from STMicroelectronics, designed for high-efficiency power switching applications. It features a drain-to-source voltage (VDS) of 60V, a continuous drain current (ID) of 16A at 25°C, and a low on-state resistance (RDS(on)) of typically 0.09 ohm at VGS=10V. The device is housed in a TO-220 package, which provides excellent thermal performance for through-hole mounting. A Power MOSFET is a type of field-effect transistor optimized for switching and amplification of power. It operates by controlling the conductivity between the drain and source terminals through an insulated gate voltage. Power MOSFETs are fundamental building blocks in power electronics, serving as switches in DC-DC converters, motor drivers, and power supplies. They are part of the broader category of discrete semiconductors, which also includes diodes, thyristors, and IGBTs. The STP16NF06L is specifically an enhancement-mode N-channel device, meaning it requires a positive gate-to-source voltage to conduct. Key features of the STP16NF06L include a low threshold voltage (VGS(th)) of 1V to 2V, making it suitable for logic-level drive, and a fast switching speed with typical rise and fall times of 40ns and 25ns, respectively. The device also offers a high avalanche energy rating, ensuring robustness in inductive load switching. Its low RDS(on) minimizes conduction losses, improving overall system efficiency. The STP16NF06L is built using STMicroelectronics' advanced PowerMESH technology, which reduces on-state resistance and switching losses while maintaining high ruggedness. The device includes an intrinsic body diode with a reverse recovery time of 60ns, which is beneficial for freewheeling current in inductive loads. The TO-220 package provides a thermal resistance of 62.5°C/W (junction-to-ambient) and 3.33°C/W (junction-to-case), allowing for effective heat dissipation with appropriate heatsinking. Typical applications include DC-DC converters, motor control circuits, power supplies, and load switching. In a DC-DC buck converter, the STP16NF06L can switch at frequencies up to 100kHz, providing efficient power conversion. In motor control, its low RDS(on) and fast switching reduce power loss and improve motor performance. The device is also suitable for battery management systems and automotive applications, though it is not AEC-Q100 qualified. When designing with the STP16NF06L, ensure adequate gate drive voltage (at least 10V for full enhancement) and proper heatsinking for high-current operation. The gate-source voltage must not exceed ±20V to prevent oxide breakdown. For high-frequency switching, use a gate resistor to control switching speed and reduce EMI.
STP20N60M2 - 600V 20A N-Channel Power MOSFET | STMicroelectronics
The STP20N60M2 is an N-channel Power MOSFET from STMicroelectronics, part of the MDmesh M2 series, designed for high-efficiency power conversion applications. It features a breakdown voltage of 600V and a continuous drain current of 20A at 25°C, with a low on-resistance of 0.19 ohm typical. The device is housed in a TO-220 package, providing excellent thermal performance for through-hole mounting. A power MOSFET is a type of field-effect transistor designed to handle significant power levels in switching and amplification circuits. It operates by controlling the flow of current through a semiconductor channel using an electric field, offering fast switching speeds and low conduction losses. Power MOSFETs are fundamental building blocks in power electronics, forming the basis of switch-mode power supplies, motor drives, and inverters. They are part of the broader category of discrete semiconductors, which also includes diodes, thyristors, and IGBTs. Key features of the STP20N60M2 include a low gate charge (Qg) of 45 nC, which reduces switching losses and enables high-frequency operation. The device also offers a fast body diode with low reverse recovery charge, making it suitable for bridge topologies. Its 600V rating provides ample voltage margin for applications operating from 230V AC mains or 400V DC buses. The TO-220 package has a thermal resistance of 62.5°C/W (junction-to-ambient) and 1.67°C/W (junction-to-case), allowing efficient heat dissipation with proper heatsinking. The MDmesh M2 technology utilizes a vertical structure with a deep trench gate, reducing on-resistance and gate charge compared to conventional planar MOSFETs. This results in lower conduction and switching losses, improving overall system efficiency. The device is avalanche-rated, with an avalanche energy of 400 mJ, ensuring robustness in inductive load switching. Typical applications include switch-mode power supplies (SMPS), power factor correction (PFC) circuits, LED lighting drivers, and motor control. In an SMPS, the STP20N60M2 can be used as the main switching element in a flyback or forward converter, handling up to 20A of drain current with low losses. For PFC, its low gate charge enables high-frequency operation, reducing the size of magnetic components. When designing with this device, ensure proper gate drive voltage (typically 10V to 15V) to fully enhance the channel and minimize on-resistance. A gate resistor may be needed to control switching speed and reduce EMI. Always provide adequate heatsinking to keep the junction temperature below 150°C, especially at high currents.
STP20NF20L - 200V 18A N-Ch STripFET MOSFET | STMicroelectronics
The STMicroelectronics STP20NF20L is an N-channel 200 V, 0.10 Ω, 18 A low-gate-charge STripFET™ Power MOSFET in a TO-220 package. It is built on ST's proprietary STripFET™ process, optimized to minimize input capacitance (Ciss) and total gate charge (Qg) for fast turn-on/turn-off switching at high frequency. What is a Power MOSFET? A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-driven semiconductor switch used to control high currents and voltages in power-conversion circuits. Power MOSFETs sit at the heart of switching power supplies (SMPS), motor drives, and DC-DC converters, where they repeatedly switch between a low-resistance ON state and a high-resistance OFF state. The "N-channel" designation indicates that current flows when a positive gate-source voltage is applied, which is naturally compatible with standard gate-drive ICs and yields lower on-resistance per unit silicon area than equivalent P-channel devices. Key features of the STP20NF20L include a drain-source voltage (VDS) of 200 V, continuous drain current (ID) of 18 A at TC, maximum on-resistance (RDS(on)) of 0.10 Ω, and low gate charge for high-efficiency switching. The TO-220 through-hole package provides 110 W power dissipation at TC with excellent thermal conductivity when bolted to a heatsink. Architecturally, the STripFET™ process is a planar/standard-cell silicon-gate technology that achieves low specific on-resistance (RDS(on) × area) by minimizing the contribution of the epi-layer resistance. This translates directly into lower conduction losses and cooler operation in continuous-current applications such as synchronous rectifiers and high-side switches. Typical applications include isolated DC-DC converters (primary-side switch), uninterruptible power supplies (UPS), low-voltage motor control, solenoid drivers, and audio amplifiers. The low gate charge also enables direct interfacing with low-power PWM controllers. When using this device, ensure the gate-drive voltage fully enhances the channel (typically 10 V) and that VDS transients are clamped below the 200 V rating. Proper heatsink mounting is essential because the TO-220 package relies on the bolted tab to dissipate the bulk of its 110 W rating. This page synthesizes distributor pricing, parametric drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, optimized for engineers evaluating the STP20NF20L.
STP4N60 - 600V 4A N-Channel Power MOSFET | STMicroelectronics
The STP4N60 is an N-channel Power MOSFET manufactured by STMicroelectronics, designed for high-voltage switching applications. It features a drain-source breakdown voltage (V(BR)DSS) of 600V and a continuous drain current (ID) of 4A at 25°C, making it suitable for power supplies, lighting, and motor control circuits. The device is housed in a TO-220 package, which provides excellent thermal performance and ease of mounting for through-hole PCB designs. A Power MOSFET is a type of field-effect transistor optimized for high-power switching and amplification. It operates by controlling the flow of current between the drain and source terminals through an electric field applied at the gate. Power MOSFETs are widely used in power electronics due to their fast switching speeds, high input impedance, and low on-state resistance, making them ideal for applications such as switch-mode power supplies (SMPS), DC-DC converters, and motor drivers. They are a key component in the broader category of discrete semiconductors, which also includes diodes, thyristors, and IGBTs. Key features of the STP4N60 include a low on-resistance (RDS(on)) of typically 2.5 ohm at VGS=10V, a gate charge (Qg) of 20 nC, and a fast switching time. The device is designed to handle high voltage and current with a maximum power dissipation of 70W at 25°C case temperature. It also features an integrated gate-source ESD protection, enhancing its robustness in harsh environments. The TO-220 package offers a thermal resistance of 62.5°C/W (junction-to-ambient) and 1.79°C/W (junction-to-case), allowing efficient heat dissipation when mounted on a heatsink. The STP4N60 utilizes a planar stripe layout and advanced strip technology, which optimizes the trade-off between on-resistance and switching performance. This architecture ensures low conduction losses and reduced switching losses, making it suitable for high-frequency operation up to 100 kHz. The device is fully RoHS compliant and halogen-free, meeting modern environmental standards. Typical applications include switch-mode power supplies (SMPS), power factor correction (PFC) circuits, electronic ballasts for lighting, and motor control in industrial and consumer equipment. Its high voltage rating and moderate current capability make it a versatile choice for offline power converters and auxiliary power supplies. When designing with the STP4N60, ensure proper gate drive voltage (typically 10V) to achieve low on-resistance. A gate resistor may be needed to control switching speed and reduce EMI. Adequate heatsinking is essential for high-power applications to keep the junction temperature within safe limits.
STP6N60M2 - 600V 5A N-Channel Power MOSFET | STMicroelectronics
The STP6N60M2 is an N-channel Power MOSFET from STMicroelectronics, part of the MDmesh M2 series, designed for high-efficiency power conversion applications. It features a breakdown voltage of 600V and a continuous drain current of 5A at 25°C, with a low on-resistance of 1.2Ω (typical) and fast switching performance. The device is housed in a TO-220 package, providing excellent thermal performance for through-hole mounting. A power MOSFET is a type of field-effect transistor optimized for switching and amplification of power in electronic circuits. It operates by controlling the flow of current through a semiconductor channel using an electric field, offering high input impedance and fast switching speeds. Power MOSFETs are fundamental building blocks in power electronics, serving as switches in power supplies, motor drives, and lighting systems. They are part of the broader category of discrete semiconductors, which also includes diodes, thyristors, and IGBTs, each suited to specific power handling and switching requirements. Key features of the STP6N60M2 include a low gate charge (Qg) of 15nC (typical), which reduces switching losses and enables high-frequency operation. The device also offers a wide safe operating area (SOA) and is avalanche-rated, ensuring robustness in harsh environments. Its low on-resistance minimizes conduction losses, improving overall system efficiency. The TO-220 package allows for easy heatsinking, making it suitable for applications requiring moderate power dissipation. Technically, the STP6N60M2 utilizes ST's MDmesh M2 technology, which combines a vertical structure with a deep trench gate to achieve low on-resistance and reduced parasitic capacitance. This results in improved figure of merit (FOM) compared to conventional planar MOSFETs. The device has a maximum junction temperature of 150°C and is available in a lead-free, RoHS-compliant version, meeting modern environmental standards. Typical applications include switch-mode power supplies (SMPS), power factor correction (PFC) circuits, LED lighting drivers, and DC-DC converters. In these applications, the STP6N60M2's high breakdown voltage and low on-resistance enable efficient power conversion, while its fast switching characteristics reduce electromagnetic interference (EMI). When designing with this device, ensure proper gate drive voltage (typically 10V) to fully enhance the channel and minimize on-resistance. Also, consider the thermal resistance of the TO-220 package (62.5°C/W junction-to-ambient) and use appropriate heatsinking for continuous operation at high currents. Gate resistors may be needed to control switching speed and reduce ringing.
STP85NF55 - 85A, 55V N-Channel Power MOSFET | STMicroelectronics
The STP85NF55 is an N-channel Power MOSFET from STMicroelectronics, designed for high-current switching applications. It features a drain-to-source voltage (VDS) of 55V and a continuous drain current (ID) of 85A at 25°C, making it suitable for power management, motor control, and DC-DC conversion. The device is housed in a TO-220 package, which provides excellent thermal performance for high-power dissipation. A Power MOSFET is a type of field-effect transistor optimized for switching and amplification in power electronics. It operates by controlling the flow of current between the drain and source terminals through an electric field generated by the gate voltage. Power MOSFETs are essential components in power management ICs, motor drivers, and switching regulators, where they handle high voltages and currents with low on-resistance and fast switching speeds. Key features of the STP85NF55 include a low on-resistance (RDS(on)) of [DATA_NEEDED: RDS(on) value] at VGS=10V, which minimizes conduction losses, and a fast switching speed that reduces switching losses in high-frequency applications. The device also offers a wide operating temperature range of -55°C to +175°C, ensuring reliability in harsh environments. The TO-220 package allows for easy mounting on heatsinks, enabling efficient thermal management. The STP85NF55 utilizes STMicroelectronics' advanced PowerMESH™ technology, which provides a robust and reliable structure for high-current handling. The device features a low gate charge (Qg) of [DATA_NEEDED: Qg value], which reduces the drive requirements and improves efficiency in high-frequency switching circuits. The built-in diode offers fast reverse recovery, making it suitable for applications requiring freewheeling diodes. Typical applications include switch-mode power supplies (SMPS), DC-DC converters, motor control circuits, and automotive systems. The high current rating and low on-resistance make it ideal for battery management systems and power distribution. In motor control, the fast switching speed ensures precise control of motor speed and torque. When designing with this device, ensure adequate gate drive voltage (typically 10V) to achieve the lowest on-resistance. The TO-220 package requires proper heatsinking to manage power dissipation, especially at high currents. Consider the thermal resistance (RthJA) of [DATA_NEEDED: RthJA value] to calculate the junction temperature under load.
STP8N60M2 - 600V 8A N-Channel Power MOSFET | STMicroelectronics
The STP8N60M2 is an N-channel Power MOSFET from STMicroelectronics, part of the MDmesh M2 series, designed for high-efficiency power conversion applications. It features a breakdown voltage of 600V and a continuous drain current of 8A at 25°C, with a low on-resistance of 0.55Ω (typical) and a gate charge of 16nC. The device is housed in a TO-220 package, providing excellent thermal performance for through-hole mounting. A power MOSFET is a type of field-effect transistor designed to handle significant power levels, typically used as a switch in power electronics. It operates by controlling the voltage on the gate terminal to modulate the conductivity between the drain and source. Power MOSFETs are fundamental building blocks in switch-mode power supplies, motor drives, and lighting systems, where they enable efficient switching at high frequencies. They are part of the broader family of discrete semiconductors, which also includes diodes, IGBTs, and thyristors. Key features of the STP8N60M2 include a very low gate charge (16nC) for reduced switching losses, a high dv/dt capability for ruggedness, and 100% avalanche tested for reliability. The device also offers a wide operating temperature range from -55°C to +150°C, making it suitable for demanding industrial environments. The TO-220 package provides a low thermal resistance of 62.5°C/W (junction-to-ambient), allowing efficient heat dissipation with proper heatsinking. The MDmesh M2 technology combines a vertical structure with a deep trench gate, resulting in a significant reduction in on-resistance and gate charge compared to conventional planar MOSFETs. This technology enables higher efficiency and lower switching losses, particularly in high-frequency applications. The device's fast body diode and low reverse recovery charge (Qrr) further enhance performance in bridge topologies. Typical applications include switch-mode power supplies (SMPS), power factor correction (PFC) circuits, LED lighting drivers, and motor control. In an SMPS, the STP8N60M2 can be used as the main switching element in a flyback or forward converter, where its low RDS(on) minimizes conduction losses and its fast switching reduces transition losses. For PFC, the device's high voltage rating and low gate charge enable efficient boost converters operating at high frequencies. When designing with this device, ensure adequate gate drive voltage (typically 10V) to fully enhance the channel and minimize on-resistance. A gate resistor in the range of 10-100Ω is recommended to control switching speed and reduce EMI. Proper PCB layout with short, wide traces for high-current paths and a low-inductance gate loop is essential for reliable operation.
STQ1NC45R-AP - 450V N-Channel SuperMESH MOSFET | STMicroelectronics
The STMicroelectronics STQ1NC45R-AP is an N-channel 450V Power MOSFET in a TO-92 (Ammo Pack) package built on ST's proprietary SuperMESH strip-based process. It delivers a typical on-resistance of 4.1 ohm at VGS=10V with a continuous drain current rating of 500 mA (Tc) and 1.5 A peak capability, and a maximum power dissipation of 3.1 W (Tc). The TO-92 through-hole package supports conventional hand-soldered and wave-soldered PCB assembly, making it well suited for low-power offline and high-voltage auxiliary switching. What is a high-voltage MOSFET? An N-channel power MOSFET is a voltage-controlled majority-via device that conducts current between drain and source when a sufficient gate-source voltage is applied. Power MOSFETs in the 400-500V class are designed for offline switching converters, where they sit inside the switch-mode power supply (SMPS) power train: AC mains -> bridge rectifier -> bulk capacitor -> high-voltage MOSFET switch -> transformer -> output rectifier -> load. Within that hierarchy, the high-voltage MOSFET is the primary energy-translation element that converts rectified mains DC into a switched waveform the transformer can step down. STMicroelectronics positions the SuperMESH family at the entry of this stack, above general-purpose small-signal MOSFETs and below their MDmesh and silicon-carbide lines. Key features of the STQ1NC45R-AP include an extremely high dv/dt capability for demanding inductive loads, a 100% avalanche-tested rating for reliability under transient over-voltage, minimized gate charge to reduce drive losses, and a low typical Rds(on) of 4.1 ohm. The TO-92 (Ammo Pack) suffix designates radial-leaded through-hole packaging on tape-and-reel for automated insertion. Typical applications are AC-DC flyback converters in sub-10W adapters, linear-mode ballasts, low-power SMPS auxiliary supplies, electronic ballasts for compact fluorescent and LED drivers, and high-voltage driver interfaces. The 450V drain-source voltage provides ample derating margin for 220-240V rectified mains (peak ~373V). Design consideration: when used as the primary switch in a flyback converter, the avalanche rating and dv/dt tolerance allow the designer to omit an external snubber in many low-power configurations. However, ensure the gate drive swing reaches 10V for full enhancement - logic-level (5V) drive is not guaranteed across all units. This page synthesizes distributor pricing, drop-in TO-92 alternatives, application circuit roles, and practical design notes not found in the manufacturer datasheet alone.
STS4DNF60L - Dual N-Ch 60V 4A 0.045Ω SO-8 MOSFET | ST
The STMicroelectronics STS4DNF60L is a dual N-channel 60 V, 4 A, 0.045 Ω STripFET Power MOSFET in an SO-8 surface-mount package, with two MOSFETs integrated on one die for compact switching applications. Built on STMicroelectronics' second-generation "Single Feature Size" strip-based process, the part delivers extremely high packing density, rugged avalanche characteristics, and a low typical on-resistance of 0.045 Ω per channel. The dual-channel integration reduces board area by approximately 50% versus two discrete SO-8 MOSFETs in synchronous-rectifier and load-switching topologies. Background Knowledge: A Power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to switch and amplify signals in power-conversion circuits. The N-channel variant requires the gate to be driven positive relative to the source to turn on. A dual (half-bridge or dual-N) MOSFET array combines two N-channel devices on a single die and is most often deployed as a low-side and high-side pair in synchronous buck converters, motor half-bridges, or as two independent load switches. The STripFET family specifically targets low gate charge and low on-resistance per unit area, optimizing conduction loss and switching speed for switch-mode power supplies (SMPS) operating in the 100 kHz to 1 MHz range. Key features of the STS4DNF60L include a typical R_DS(on) of 0.045 Ω at V_GS = 10 V, a continuous drain current of 4 A per channel, low threshold drive (logic-level-compatible enhancement mode), standard SO-8 outline for automated surface-mount assembly, and avalanche-rated switching robustness. The dual-die construction halves the PCB footprint versus two discrete equivalents, while the STripFET process minimizes reverse-recovery charge (Q_rr) for efficient synchronous rectification. Architecturally, the device uses STMicroelectronics' STripFET process which combines a fine-pitch strip cell layout with a low-resistance substrate to balance on-resistance, gate charge, and ruggedness. The resulting transistor exhibits excellent manufacturing reproducibility and is well suited to high-frequency DC-DC converter stages, where low Q_g and low Q_rr reduce switching loss and diode losses respectively. Typical applications for the STS4DNF60L include synchronous buck converters in low-voltage DC-DC regulators, battery protection and load management circuits, DC motor control in consumer appliances and small industrial drives, USB Type-C VBUS power switching, and small Uninterruptible Power Supplies (UPS) or solar microinverter auxiliary rails. When designing with this part, ensure that the gate-drive voltage reaches at least 4.5 V for full enhancement (R_DS(on) is specified at V_GS = 10 V). Use a gate resistor (typically 10 Ω to 100 Ω) to control ringing and dv/dt, and keep the high-di/dt loop (drain-to-source of each channel plus its bypass capacitor) physically short to limit voltage overshoot and EMI. This page synthesizes distributor pricing, drop-in alternatives, comparison parameters, and practical PCB/design notes that go beyond the manufacturer datasheet, helping engineers select and source the STS4DNF60L with confidence.
STS5DNF60L - Dual N-Ch 60V 5A 35mΩ STripFET II MOSFET | STMicroelectronics
The STMicroelectronics STS5DNF60L is an automotive-grade dual N-channel 60 V, 35 mΩ typical on-resistance, 5 A STripFET II Power MOSFET housed in an SO-8 surface-mount package. It integrates two independent N-channel MOSFETs in a single 8-pin SOIC outline, making it well suited for half-bridge, full-bridge, and synchronous-rectifier topologies where PCB real estate is constrained. The device is specified for 60 V drain-to-source breakdown, 5 A continuous drain current per channel at 25 °C, and a typical R_DS(on) of 35 mΩ at V_GS = 10 V. A power MOSFET is a voltage-controlled semiconductor switch that uses a gate field to modulate current flow between drain and source terminals. The STripFET II process employed in the STS5DNF60L is specifically engineered to minimize input capacitance and gate charge, which sit inside the broader technology hierarchy of trench MOSFET -> power MOSFET -> discrete semiconductor -> active electronic component. Low Q_g directly reduces driver losses in high-frequency switching applications and enables operation from low-current logic-level gate drivers. Key features include 60 V V_DSS rating, 5 A continuous drain current per channel, 35 mΩ typical R_DS(on) at V_GS = 10 V, low threshold voltage compatible with 3.3 V / 5 V gate drive, low gate charge for fast switching edges, and 100 % avalanche-tested internal construction. The SO-8 footprint provides a standardized land pattern that simplifies automated SMT assembly and supports dual-sided cooling through copper-pour design. From an architecture standpoint, the dual-die monolithic integration shares a common substrate while keeping source pins electrically isolated, so each transistor can be driven independently in any switching configuration. The STripFET II cell geometry lowers conduction losses versus earlier STripFET generations, improving efficiency in DC-DC converter primary-side switches and secondary-side synchronous rectifiers. Typical turn-on delay times are in the tens of nanoseconds, enabling use at switching frequencies from 100 kHz up to several hundred kHz. Typical applications include isolated DC-DC converter primary switches for telecom and computer power supplies, secondary-side synchronous rectification in buck converters, motor-driver half-bridges for low-power BLDC drivers, and automotive 12 V/24 V load switches. The 60 V rating provides ample headroom above 24 V industrial bus rails and 12 V automotive transient excursions. When designing with this part, ensure that gate-drive voltage remains at or above 4.5 V for full enhancement at low temperatures, place the gate-drive resistor within 5 mm of the gate pin to suppress ringing, and keep high-dV/dt loops compact to limit EMI. A low-ESR ceramic bypass of at least 10 µF should sit adjacent to each drain pin for hard-switched topologies. This page synthesizes real distributor stock data, parametric comparison versus alternates, and practical PCB-layout guidance that goes beyond what the manufacturer datasheet alone provides.
STS7DNH3LL - Dual N-Channel 30V MOSFET, 0.018Ω, 7A | STMicroelectronics
The STMicroelectronics STS7DNH3LL is a dual N-channel 30 V STripFET III Power MOSFET array housed in an SO-8 surface-mount package, with a typical on-resistance of 0.018 Ω and per-channel continuous drain current rated up to 7 A. The device integrates two low-RDS(on) N-channel FETs in a single 8-pin SOIC, designed for high-efficiency synchronous rectification and load switching in compact power designs. Its 30 V drain-to-source breakdown and 0.018 Ω RDS(on) at 10 V VGS make it well suited to synchronous buck converters, low-voltage motor drives, and battery protection circuits. A Power MOSFET is a voltage-controlled semiconductor switch that uses an electric field at the gate to control current flow between drain and source, enabling high-efficiency power conversion at switching frequencies that mechanical or bipolar devices cannot achieve. Within the broader semiconductor taxonomy, a Power MOSFET belongs to the discrete transistor family (transistor -> discrete semiconductor -> semiconductor), with the sub-class of enhancement-mode N-channel devices dominating low-voltage synchronous-rectifier designs because N-channel carriers exhibit roughly three times higher mobility than P-channel carriers, lowering conduction loss for a given silicon area. Key features of the STS7DNH3LL include 0.018 Ω typical on-resistance at VGS = 10 V, 30 V VDS max rating, ±20 V VGS rating, low gate charge optimized for STripFET III generation, and an integrated dual-FET topology that halves board area versus two discrete DPAK devices. The SO-8 package supports a maximum power dissipation of approximately 2.5 W per channel with proper copper thermal management, and the device is rated for operation across -55°C to +175°C junction temperature for harsh-environment industrial loads. Architecturally, the STS7DNH3LL uses STMicroelectronics' third-generation STripFET III trench-gate process, which reduces the figure-of-merit RDS(on) × Qg compared to earlier planar generations. This directly translates into lower switching and conduction losses in high-frequency buck and synchronous-rectifier applications. The integrated monolithic dual-die construction also reduces parasitic source inductance relative to discrete pairs, which improves switching performance and reduces ringing on the gate drive waveform. Typical applications include synchronous rectification in 12 V buck converters for telecom and server point-of-load rails, low-voltage DC motor control in robotics and drones, OR-ing and hot-swap circuits on multi-rail backplanes, and high-efficiency battery management in portable electronics and e-bike motor controllers. The dual-FET topology is particularly valuable where PCB real estate is at a premium. When designing with this device, place the gate-drive return paths directly over the source pad to minimize parasitic inductance, and ensure the gate drive voltage is sequenced properly to prevent simultaneous turn-on of both channels. The SO-8 thermal pad is the drain terminal for both FETs, so the PCB copper pour doubles as both a thermal dissipation path and a low-impedance drain connection.
STU16N65M5 - 650V N-Channel Power MOSFET | STMicroelectronics
The STU16N65M5 is an N-channel Power MOSFET from STMicroelectronics, part of the MDmesh M5 series, designed for high-efficiency power conversion applications. It features a breakdown voltage of 650V and a continuous drain current of 16A at 25°C, with a low on-resistance of 0.29 ohm (typical) to minimize conduction losses. The device is housed in an IPAK (TO-251) package, which offers a compact footprint with a metal tab for thermal dissipation, suitable for through-hole mounting in power supplies and industrial equipment. A Power MOSFET is a type of field-effect transistor optimized for switching and amplification of power. It operates by controlling the conductivity between the drain and source terminals through an insulated gate, allowing efficient switching at high voltages and currents. Power MOSFETs are fundamental building blocks in power electronics, serving as switches in DC-DC converters, AC-DC power supplies, motor drives, and lighting systems. They are part of the broader category of discrete semiconductors, which also includes diodes, thyristors, and IGBTs, each tailored for specific power handling and switching requirements. Key features of the STU16N65M5 include a very low gate charge (Qg) of 38 nC (typical), which enables fast switching and reduces driver losses, and a high dv/dt capability for robust performance in hard-switching topologies. The device also offers a wide operating junction temperature range from -55°C to +150°C, ensuring reliability in harsh environments. Its avalanche ruggedness is rated at 400 mJ (single pulse), making it suitable for applications where inductive loads may cause voltage spikes. Technically, the MDmesh M5 series utilizes a proprietary strip layout technology that reduces on-resistance and gate charge simultaneously, achieving a figure of merit (RDS(on) x Qg) that is among the best in its class. This technology enhances the device's efficiency in high-frequency switching applications, where both conduction and switching losses are critical. The STU16N65M5 also features a built-in diode with fast recovery characteristics, reducing reverse recovery losses in bridge topologies. Typical applications include switch-mode power supplies (SMPS) for consumer and industrial electronics, power factor correction (PFC) circuits, LED lighting drivers, and solar inverters. Its 650V rating provides ample margin for universal input (85-265V AC) power supplies, while the low on-resistance ensures high efficiency in continuous conduction mode. When designing with the STU16N65M5, ensure proper gate drive voltage (typically 10V) to fully enhance the channel and minimize on-resistance. A gate resistor may be needed to control switching speed and reduce EMI. Thermal management is crucial: the IPAK package's tab should be soldered to a sufficient copper area or heatsink to dissipate heat, especially at high currents. Always consider the device's SOA (Safe Operating Area) and avalanche ratings when designing for inductive loads.
STW11NK90Z - 900V N-Channel Power MOSFET | STMicroelectronics
The STW11NK90Z is an N-channel Power MOSFET from STMicroelectronics, designed for high-voltage switching applications. It features a drain-source voltage (VDS) of 900V, a continuous drain current (ID) of 9.5A at 25°C, and a low on-resistance (RDS(on)) of 0.85 ohm. The device is housed in a TO-247 package, which provides excellent thermal performance for high-power applications. A Power MOSFET is a type of field-effect transistor designed to handle significant power levels. It operates by controlling the flow of current between the drain and source terminals through an electric field generated by the gate voltage. Power MOSFETs are essential components in power electronics, serving as switches in power supplies, motor drives, and inverters. They are part of the broader category of discrete semiconductors, which also includes diodes, thyristors, and IGBTs. Key features of the STW11NK90Z include a high voltage rating of 900V, making it suitable for applications such as switch-mode power supplies (SMPS), power factor correction (PFC) circuits, and high-voltage DC-DC converters. The low on-resistance minimizes conduction losses, improving overall efficiency. The device also features a fast switching speed, which is critical for reducing switching losses in high-frequency applications. The STW11NK90Z utilizes STMicroelectronics' advanced PowerMESH technology, which provides a robust and reliable structure. The device has a maximum junction temperature of 150°C and is available in a TO-247 package, which offers a low thermal resistance of 0.5°C/W, enabling efficient heat dissipation. The device is RoHS compliant and lead-free, meeting environmental standards. Typical applications include high-voltage power supplies, industrial motor drives, and renewable energy inverters. The device's high voltage rating and low on-resistance make it ideal for these applications, where efficiency and reliability are paramount. When designing with the STW11NK90Z, it is important to consider the gate drive requirements. The device has a gate threshold voltage of 3V to 5V, and a gate charge of 45nC, which should be considered when designing the gate drive circuit. Additionally, proper heat sinking is essential to maintain the junction temperature within safe limits.
STW12N60M2 - 600V 12A N-Channel MDmesh M2 MOSFET | STMicroelectronics
The STW12N60M2 is an N-channel Power MOSFET from STMicroelectronics' MDmesh M2 series, designed for high-efficiency power conversion applications. It features a 600V drain-source breakdown voltage and a continuous drain current of 12A at 25°C, with a low on-resistance of 0.38 ohm (typical) and a fast body diode. The device is housed in a TO-247 package, which provides excellent thermal performance for high-power designs. A Power MOSFET is a type of field-effect transistor optimized for switching and amplification in power electronics. It operates by controlling the conductivity between the drain and source terminals through an insulated gate voltage. Power MOSFETs are essential components in switch-mode power supplies, motor drives, and inverters, where they handle high voltages and currents with minimal conduction and switching losses. They are part of the broader family of power semiconductor devices, which also includes IGBTs and thyristors, but MOSFETs are preferred for high-frequency switching due to their fast switching speed and low drive power. Key features of the STW12N60M2 include a low gate charge (Qg) of 30 nC (typical), which reduces switching losses and enables high-frequency operation. The device also offers a high dv/dt capability and is avalanche-rated, ensuring robustness in harsh environments. The MDmesh M2 technology provides an excellent figure of merit (RDS(on) x Qg), making it suitable for applications where efficiency is critical. The STW12N60M2 utilizes STMicroelectronics' MDmesh M2 vertical structure, which combines a low on-resistance with a fast intrinsic diode. This technology reduces conduction and switching losses, improving overall system efficiency. The device is fully isolated and RoHS compliant, meeting modern environmental standards. Typical applications include switch-mode power supplies (SMPS), power factor correction (PFC) circuits, LED lighting drivers, and solar inverters. The high voltage rating and low on-resistance make it ideal for 600V-class power conversion systems. When designing with this device, ensure proper gate drive voltage (typically 10V) to achieve the lowest on-resistance. A gate resistor may be needed to control switching speed and reduce EMI. Adequate heatsinking is required for high-current operation, as power dissipation can be significant.
STW12NK95Z - 950V 10A Zener SuperMESH MOSFET | STMicroelectronics
The STW12NK95Z is an N-channel Power MOSFET from STMicroelectronics, featuring a 950V drain-source breakdown voltage and a continuous drain current of 10A at case temperature (Tc). It is housed in a TO-247-3 through-hole package, designed for high-voltage power switching applications. The device offers a typical on-resistance of 0.69 ohm (maximum 0.90 ohm) and a power dissipation of 230W at Tc, making it suitable for demanding power conversion circuits. A Power MOSFET is a type of field-effect transistor optimized for high power and high voltage switching. It operates by controlling the conductivity between the drain and source terminals through an insulated gate voltage. Power MOSFETs are essential components in power electronics, serving as switches in power supplies, inverters, and motor drives. They belong to the broader discrete semiconductor family, alongside diodes, IGBTs, and thyristors. Key features include Zener protection, which safeguards the gate oxide from overvoltage transients, and minimized gate charge for faster switching and reduced drive losses. The device is 100% avalanche tested, ensuring ruggedness under inductive load conditions, and offers extremely high dv/dt capability for reliable fast-switching operation. The SuperMESH technology, an evolution of ST's strip-based PowerMESH layout, significantly reduces on-resistance while maintaining high breakdown voltage. This results in lower conduction losses and improved efficiency, while minimized gate charge enables higher frequency operation and smaller magnetic components. Typical applications include switch-mode power supplies (SMPS), power factor correction (PFC) circuits, high-voltage DC-DC converters, and lighting systems where efficiency and reliability are critical. When designing with this device, ensure a proper gate drive voltage (typically 10V) to fully enhance the channel and minimize conduction losses, and provide adequate heatsinking since the device can dissipate up to 230W at maintained case temperature.
STW18N60M2 - 650V 18A N-Channel Power MOSFET | STMicroelectronics
The STW18N60M2 is an N-channel Power MOSFET manufactured by STMicroelectronics, featuring a breakdown voltage of 650V and a continuous drain current of 18A at 25°C. It is housed in a TO-247 package, which is a through-hole package suitable for high-power applications. This device is part of the MDmesh M2 series, which utilizes ST's advanced strip layout technology to achieve low on-resistance and reduced switching losses. A power MOSFET is a type of field-effect transistor designed to handle significant power levels in switching and amplification applications. It operates by controlling the flow of current through a semiconductor channel using an electric field, and it is widely used in power electronics for its high switching speed and efficiency. Power MOSFETs are a subset of discrete semiconductors, which are fundamental building blocks in power management and conversion systems. Key features of the STW18N60M2 include a low typical on-resistance of 0.19 ohm (at VGS=10V, ID=9A), a high avalanche ruggedness with an energy rating of 700 mJ, and a fast body diode with low reverse recovery charge. The device also offers a wide operating junction temperature range from -55°C to +150°C, making it suitable for demanding environments. The TO-247 package provides excellent thermal performance with a junction-to-case thermal resistance of 0.6°C/W, enabling efficient heat dissipation. The STW18N60M2 is built using ST's MDmesh M2 technology, which combines a vertical structure with a strip layout to minimize on-resistance and gate charge. This results in improved figure of merit (FOM) compared to previous generations, leading to higher efficiency in power conversion circuits. The device is designed for hard-switching topologies and offers a low gate charge of 45 nC, reducing driver requirements and switching losses. Typical applications include switch-mode power supplies (SMPS), power factor correction (PFC) circuits, and high-frequency DC-DC converters. In an SMPS, the STW18N60M2 can be used as the main switching element in the primary side, handling high voltage and current with minimal losses. Its low on-resistance ensures high efficiency, while its fast switching characteristics reduce electromagnetic interference (EMI). When designing with this device, ensure proper gate drive voltage (typically 10V) to achieve the lowest on-resistance. The device is not internally protected against overcurrent, so external current sensing and protection circuitry are recommended. Additionally, a proper snubber circuit may be required to manage voltage spikes during switching transitions.