STP15N60M2 - 15A, 600V N-Channel Power MOSFET | STMicroelectronics
部品番号: STP15N60M2 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $1.5 | $1.50 |
| 10 | $1.0833 | $10.83 |
| 100 | $0.9583 | $95.83 |
| 500 | $0.9167 | $458.35 |
| 1,000 | $0.875 | $875.00 |
STP15N60M2 概要
A Power MOSFET is a type of field-effect transistor optimized for switching and amplification in power electronics. It operates by controlling the conductivity between the drain and source terminals through an insulated gate voltage. Power MOSFETs are fundamental building blocks in switch-mode power supplies, motor drives, and lighting systems, where they function as high-speed switches. They are part of the broader family of power semiconductor devices, which also includes IGBTs and thyristors, but MOSFETs are preferred for high-frequency switching due to their fast switching speeds and low drive power requirements.
Key features of the STP15N60M2 include a low gate charge (Qg) of 30 nC, which reduces switching losses and enables high-frequency operation. The device also offers a fast body diode with low reverse recovery charge, making it suitable for bridge topologies. The MDmesh M2 technology provides an excellent figure of merit (RDS(on) x Qg), balancing conduction and switching losses for improved efficiency.
The STP15N60M2 utilizes ST's MDmesh M2 vertical structure, which reduces on-resistance and gate charge compared to conventional planar MOSFETs. This technology enhances the device's switching performance, allowing designers to achieve higher power density in compact designs. The device is avalanche-rated, with an avalanche energy of 300 mJ, ensuring robustness in inductive load switching applications.
Typical applications include switch-mode power supplies (SMPS), power factor correction (PFC) circuits, LED lighting drivers, and motor control inverters. The 600V rating makes it suitable for universal input (85-265V AC) offline power supplies, where it can handle the high voltage stress during switching transients.
When designing with this device, ensure proper gate drive voltage (typically 10V) to achieve the lowest on-resistance. The TO-220 package requires adequate heatsinking for high-power applications; the thermal resistance junction-to-case is 1.6°C/W, so a heatsink is necessary when dissipating more than a few watts.
ドロップイン代替品: STP15N60M2 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
クイック比較ツール — 並列比較する代替部品を選択:
STP15N60M2-EP
📋 参考代替品（カタログ未掲載）
STP15N60M2-1
📋 参考代替品（カタログ未掲載）
STP15N60M2-2
📋 参考代替品（カタログ未掲載）
IPP60R099CP
📋 参考代替品（カタログ未掲載）
FCP15N60
📋 参考代替品（カタログ未掲載）
STP15N60M2 最大定格＆電気的特性
| Polarity | N-Channel |
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID) at 25°C | 15 A |
| Continuous Drain Current (ID) at 100°C | 9.5 A |
| Pulsed Drain Current (IDM) | 60 A |
| On-Resistance (RDS(on)) | 0.29 ohm typical, 0.34 ohm max |
| Gate-Source Voltage (VGS) | ±25 V |
| Gate Threshold Voltage (VGS(th)) | 2 V to 4 V |
| Total Gate Charge (Qg) | 30 nC |
| Input Capacitance (Ciss) | 1100 pF |
| Output Capacitance (Coss) | 80 pF |
| Reverse Transfer Capacitance (Crss) | 5 pF |
| Avalanche Energy (EAS) | 300 mJ |
| 動作温度範囲 | -55°C to +150°C |
| パッケージ | TO-220 |
| 実装タイプ | Through Hole |
| RoHS ステータス | Compliant |
STP15N60M2 ピン構成
| ピン 1 | Gate — Gate drive input |
| ピン 2 | Drain — Drain connection |
| ピン 3 | Source — Source connection |
安全動作領域
主な用途
STP15N60M2 の用途: 6 件s: Switch-Mode Power Supplies (SMPS), Power Factor Correction (PFC), LED Lighting Drivers, Motor Control Inverters, Solar Inverters, Welding Equipment.
Switch-Mode Power Supplies (SMPS)
The STP15N60M2 is ideal for SMPS due to its 600V rating and low on-resistance, enabling high efficiency in AC-DC converters. In a typical flyback or forward converter, the MOSFET switches at frequencies up to 100 kHz, and the low gate charge (30 nC) reduces switching losses. The device's avalanche ruggedness (300 mJ) ensures reliable operation during load transients. Compared to IGBTs, the MOSFET offers faster switching, which is critical for reducing transformer size. The TO-220 package allows easy heatsinking, and the low RDS(on) minimizes conduction losses, improving overall power supply efficiency by up to 2%.
おすすめ
Power Factor Correction (PFC)
In PFC circuits, the STP15N60M2 operates in boost converter topology to shape the input current waveform. The 600V rating handles the high voltage stress in universal input applications (85-265V AC). The low gate charge enables high-frequency operation (typically 50-100 kHz), reducing the size of the boost inductor. The fast body diode minimizes reverse recovery losses, improving efficiency. The device's low on-resistance (0.29 ohm) reduces conduction losses, which is crucial for meeting efficiency standards like 80 PLUS. The avalanche rating ensures robustness during line transients.
おすすめ
LED Lighting Drivers
The STP15N60M2 is suitable for LED drivers, particularly in offline applications where high voltage isolation is required. In a flyback-based LED driver, the MOSFET switches at high frequency to regulate output current. The 600V rating handles the reflected voltage and leakage spikes. The low gate charge reduces switching losses, improving efficiency and enabling smaller heatsinks. The device's thermal performance (RthJC=1.6°C/W) allows it to operate reliably in enclosed fixtures. The avalanche ruggedness protects against inductive spikes from the transformer.
おすすめ
Motor Control Inverters
In motor control inverters, the STP15N60M2 is used in the inverter bridge to drive AC motors. The 600V rating is suitable for 230V AC motor drives. The fast switching speed (low Qg) reduces switching losses, allowing higher PWM frequencies for smoother motor control. The low on-resistance minimizes conduction losses, improving overall drive efficiency. The device's avalanche rating ensures robustness during motor regenerative braking. The TO-220 package is easy to mount on heatsinks in industrial drives.
おすすめ
Solar Inverters
The STP15N60M2 is used in solar inverters for DC-AC conversion. The 600V rating handles the high voltage from solar panels (up to 500V). The low on-resistance reduces conduction losses, improving the efficiency of the MPPT (Maximum Power Point Tracking) stage. The fast switching speed enables high-frequency operation, reducing the size of magnetic components. The device's robustness against avalanche events is important for handling inductive loads and grid transients. The TO-220 package allows for easy thermal management in outdoor enclosures.
おすすめ
Welding Equipment
In welding machines, the STP15N60M2 is used in the inverter stage to convert DC to high-frequency AC. The 600V rating handles the high voltage stress in the inverter. The low gate charge enables high-frequency switching (up to 100 kHz), reducing transformer size and weight. The device's high current capability (15A) supports the high power demands of welding. The avalanche ruggedness ensures reliability during arc strikes and load changes. The TO-220 package is suitable for forced-air cooling in industrial equipment.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: STP15N60M2 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | STP15N60M2-EP | IPP60R099CP | FCP15N60 |
|---|---|---|---|---|
| Package | TO-220 | TO-220 | TO-220 | TO-220 |
| Brand | STMicroelectronics | STMicroelectronics | Infineon | onsemi |
| Drain-Source Voltage (VDS) | 600 V | 600 V | 600 V | 600 V |
| Continuous Drain Current (ID) at 25°C | 15 A | 15 A | 24 A | 15 A |
| On-Resistance (RDS(on)) | 0.29 ohm | 0.29 ohm | 0.099 ohm | 0.32 ohm |
| Total Gate Charge (Qg) | 30 nC | 30 nC | 45 nC | 35 nC |
| Avalanche Energy (EAS) | 300 mJ | 300 mJ | 200 mJ | 250 mJ |
| Automotive Grade | No | No | No | No |
主な差別化要因
- Low on-resistance (0.29 ohm) for reduced conduction losses （vs FCP15N60)
- Low gate charge (30 nC) for fast switching （vs IPP60R099CP)
- High avalanche energy (300 mJ) for robustness （vs IPP60R099CP)
設計ノート
The STP15N60M2 has a junction-to-case thermal resistance of 1.6°C/W. For a power dissipation of 50W, the junction temperature rise is 80°C above case temperature. A heatsink with a thermal resistance of 1°C/W or better is recommended to keep the junction temperature below 150°C. Use thermal compound and ensure proper mounting torque (0.55 Nm) for optimal heat transfer.
For the TO-220 package, ensure the drain tab is connected to a large copper area for heat spreading. Keep the gate drive traces short and away from high-current paths to minimize parasitic inductance. Place a 10-ohm gate resistor to dampen ringing, and use a 100nF ceramic capacitor close to the gate-source pins for noise suppression.
Do not exceed the maximum gate-source voltage of ±25V. Use a gate driver with proper voltage clamping to prevent overvoltage. Ensure the gate drive voltage is at least 10V to achieve the specified on-resistance. For inductive loads, add a freewheeling diode or snubber to prevent avalanche breakdown, even though the device is avalanche-rated.
コンプライアンス情報
RoHS compliant per STMicroelectronics product page. Not AEC-Q100 qualified; use STP15N60M2-EP for automotive if available.
